JP2006054276A - 固体撮像素子 - Google Patents
固体撮像素子 Download PDFInfo
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- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
【解決手段】二次元アレイ状に配置された光電変換部1と、その光電変換部1での光電変換によって発生した電荷を電圧に変換する電圧変換部2とを備えた固体撮像素子において、前記二次元アレイ中で斜めに隣り合う二つの光電変換部1の間に一つの電圧変換部2を配置して、当該一つの電圧変換部2を前記二つの光電変換部1が共用するように構成する。
【選択図】図1
Description
さらに、図13に示した複数画素共有構造では、光電変換部21の領域とトランジスタ領域24とを分割しているため、画素配置の点で効率的であり、バランスの良い配置レイアウトも得られるが、トランジスタ領域24が光電変換部21の領域と一列に並ぶため、トランジスタ領域24が広いと光電変換部21の領域が大きく削られることになり、その結果、光電変換部21を各画素における光学中心(画素中心)に配置することが困難になるのに加えて、各光電変換部21に蓄積可能な信号電荷量の確保も困難になる(例えば、図13(b)参照)。
先ず、本発明の第1実施形態について説明する。第1実施形態におけるCMOSセンサの概略構成例を図1〜3に示す。図1は各構成要素の配置レイアウト例であり、図2はその回路構成例であり、図3は信号読み出し例である。
次に、本発明の第2実施形態について説明する。図4は、第2実施形態におけるCMOSセンサの概略構成例を示す説明図である。
次に、本発明の第3実施形態について説明する。図5〜6は、第3実施形態におけるCMOSセンサの概略構成例を示す説明図である。
次に、本発明の第4実施形態について説明する。図7は色成分別の生成電荷量を示す説明図であり、図8〜9は第4実施形態におけるCMOSセンサの概略構成例を示す説明図である。
次に、本発明の第5実施形態について説明する。図10は、第5実施形態におけるCMOSセンサの概略構成例を示す説明図である。
次に、本発明の第5実施形態について説明する。図11は、第6実施形態におけるCMOSセンサの概略構成例を示す説明図である。
Claims (15)
- 二次元アレイ状に配置された光電変換部と、当該光電変換部での光電変換によって発生した電荷を電圧に変換する電圧変換部とを備えた固体撮像素子において、
前記二次元アレイ中で斜めに隣り合う二つの光電変換部の間に一つの電圧変換部が配置され、当該一つの電圧変換部を前記二つの光電変換部が共用するように構成された
ことを特徴とする固体撮像素子。 - 前記電圧変換部により変換された電圧信号に対する処理を行う回路群が配置されるトランジスタ領域を備えるとともに、当該トランジスタ領域における回路群が複数の前記電圧変換部と配線を介して電気的に接続され、当該回路群を各電圧変換部が共用するように構成された
ことを特徴とする請求項1記載の固体撮像素子。 - 前記回路群を共用する複数の電圧変換部に対して複数のトランジスタ領域が設けられ、当該回路群を構成する各回路要素が前記複数のトランジスタ領域に分散配置されている
ことを特徴とする請求項2記載の固体撮像素子。 - 前記回路群を二つの電圧変換部が共用するとともに、当該電圧変換部のそれぞれを二つの光電変換部が共用し、これら一組の回路群、二つの電圧変換部および計四つの光電変換部が一つの共有単位を構成する
ことを特徴とする請求項3記載の固体撮像素子。 - 前記共有単位を構成する光電変換部には、互いに同じ分光感度のものが含まれている
ことを特徴とする請求項4記載の固体撮像素子。 - 前記共有単位を構成する光電変換部のうちの互いに同じ分光感度のものについて、当該光電変換部からの電荷の読み出しを同時に行って、当該共有単位を構成する電圧変換部での電荷による信号加算を行う駆動モードに対応するように構成された
ことを特徴とする請求項5記載の固体撮像素子。 - 前記共有単位における各電圧変換部による回路群の共用が前記二次元アレイにおける列方向に沿って行われるように構成された
ことを特徴とする請求項4記載の固体撮像素子。 - 前記回路群のうちの前記二次元アレイにおける同一行に配置されたものに対して行一括の駆動信号を与えて、前記二次元アレイの同一行に並ぶ光電変換部についての一括読み出しを行うように構成された
ことを特徴とする請求項7記載の固体撮像素子。 - 前記回路群での処理後の電圧信号を読み出すための信号線が前記二次元アレイにおける同一列に対して複数設けられ、当該複数の信号線により前記二次元アレイの列方向に並ぶ複数の前記共有単位からの電圧信号の読み出しを同時に行うように構成された
ことを特徴とする請求項4記載の固体撮像素子。 - 前記共有単位における電圧変換部を前記二次元アレイ中で斜めに隣り合う二つの光電変換部が共用することにより当該二次元アレイの奇数行と偶数行とで信号読み出しの順列が異なることを補正するための信号順列復元手段を備える
ことを特徴とする請求項4記載の固体撮像素子。 - 二次元アレイ状に配置された光電変換部に対応してベイヤー配列の色フィルタが配されるとともに、当該二次元アレイにおける奇数列と偶数列とで出力電圧信号に対する増幅率を相違させるように構成された
ことを特徴とする請求項4記載の固体撮像素子。 - 一行駆動期間毎に前記二次元アレイの各列から出力される信号を当該各列毎に有するAD変換手段によってデジタル信号化するとともに、複数列から出力されるデジタル信号が一つの信号出力手段に順次入力されるように構成された
ことを特徴とする請求項11記載の固体撮像素子。 - 二次元アレイ状に配置された光電変換部に対応してベイヤー配列の色フィルタが配されるとともに、当該二次元アレイにおける奇数列と偶数列との出力がそれぞれ異なる二つの行回路に接続し、かつ、前記二つの行回路における増幅率が互いに異なる
ことを特徴とする請求項4記載の固体撮像素子。 - 二次元アレイ状に配置された光電変換部に対応してベイヤー配列の色フィルタが配されている場合に、前記二次元アレイ中で一つの電圧変換部を共用する斜めに隣り合う二つの光電変換部で、前記ベイヤー配列により同色の色フィルタが配されたものからの検出信号の比較結果に基づいて、画素レイアウトの違いに起因する出力信号差が補正されている
ことを特徴とする請求項4記載の固体撮像素子。 - 前記電圧変換部での電荷による信号加算を行う駆動モードに対応するとともに、電荷が同時に読み出される光電変換部同士での光電変換時間が互いに異なるように構成された
ことを特徴とする請求項4記載の固体撮像素子。
Priority Applications (6)
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JP2004234061A JP4492250B2 (ja) | 2004-08-11 | 2004-08-11 | 固体撮像素子 |
TW094126432A TWI282689B (en) | 2004-08-11 | 2005-08-03 | Solid-state imaging device and imaging apparatus |
CNB2005100897588A CN100424883C (zh) | 2004-08-11 | 2005-08-09 | 固态成像器件和成像装置 |
US11/200,687 US7812878B2 (en) | 2004-08-11 | 2005-08-10 | Solid-state imaging device and imaging apparatus |
EP05017430A EP1628468B1 (en) | 2004-08-11 | 2005-08-10 | Solid-state imaging device and imaging apparatus |
KR1020050073166A KR101104617B1 (ko) | 2004-08-11 | 2005-08-10 | 고체 촬상 디바이스 및 촬상 장치 |
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JP2004234061A JP4492250B2 (ja) | 2004-08-11 | 2004-08-11 | 固体撮像素子 |
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JP4492250B2 JP4492250B2 (ja) | 2010-06-30 |
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US (1) | US7812878B2 (ja) |
EP (1) | EP1628468B1 (ja) |
JP (1) | JP4492250B2 (ja) |
KR (1) | KR101104617B1 (ja) |
CN (1) | CN100424883C (ja) |
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KR101104617B1 (ko) | 2012-01-12 |
EP1628468A3 (en) | 2007-11-07 |
TW200618613A (en) | 2006-06-01 |
EP1628468A2 (en) | 2006-02-22 |
US20060038904A1 (en) | 2006-02-23 |
KR20060050362A (ko) | 2006-05-19 |
CN1734779A (zh) | 2006-02-15 |
EP1628468B1 (en) | 2012-03-28 |
US7812878B2 (en) | 2010-10-12 |
CN100424883C (zh) | 2008-10-08 |
TWI282689B (en) | 2007-06-11 |
JP4492250B2 (ja) | 2010-06-30 |
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