JP2005526390A5 - - Google Patents

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Publication number
JP2005526390A5
JP2005526390A5 JP2004506049A JP2004506049A JP2005526390A5 JP 2005526390 A5 JP2005526390 A5 JP 2005526390A5 JP 2004506049 A JP2004506049 A JP 2004506049A JP 2004506049 A JP2004506049 A JP 2004506049A JP 2005526390 A5 JP2005526390 A5 JP 2005526390A5
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JP
Japan
Prior art keywords
metal oxide
adhesive layer
electrode
oxide adhesive
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004506049A
Other languages
English (en)
Japanese (ja)
Other versions
JP5059290B2 (ja
JP2005526390A (ja
Filing date
Publication date
Priority claimed from US10/147,093 external-priority patent/US7335552B2/en
Application filed filed Critical
Publication of JP2005526390A publication Critical patent/JP2005526390A/ja
Publication of JP2005526390A5 publication Critical patent/JP2005526390A5/ja
Application granted granted Critical
Publication of JP5059290B2 publication Critical patent/JP5059290B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004506049A 2002-05-15 2003-05-12 薄膜キャパシタ装置の電極および薄膜キャパシタ装置の電極形成方法 Expired - Fee Related JP5059290B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/147,093 2002-05-15
US10/147,093 US7335552B2 (en) 2002-05-15 2002-05-15 Electrode for thin film capacitor devices
PCT/US2003/014934 WO2003098646A1 (en) 2002-05-15 2003-05-12 Improved electrode for thin film capacitor devices

Publications (3)

Publication Number Publication Date
JP2005526390A JP2005526390A (ja) 2005-09-02
JP2005526390A5 true JP2005526390A5 (enExample) 2006-06-15
JP5059290B2 JP5059290B2 (ja) 2012-10-24

Family

ID=29418951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004506049A Expired - Fee Related JP5059290B2 (ja) 2002-05-15 2003-05-12 薄膜キャパシタ装置の電極および薄膜キャパシタ装置の電極形成方法

Country Status (6)

Country Link
US (2) US7335552B2 (enExample)
EP (1) EP1504460B1 (enExample)
JP (1) JP5059290B2 (enExample)
KR (1) KR100699397B1 (enExample)
DE (1) DE60328596D1 (enExample)
WO (1) WO2003098646A1 (enExample)

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US20060065916A1 (en) 2004-09-29 2006-03-30 Xubai Zhang Varactors and methods of manufacture and use
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DE102005048774B4 (de) * 2005-10-07 2009-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat, das zumindest bereichsweise an einer Oberfläche mit einer Beschichtung eines Metalls versehen ist, sowie dessen Verwendung
US7560392B2 (en) * 2006-05-10 2009-07-14 Micron Technology, Inc. Electrical components for microelectronic devices and methods of forming the same
KR100849187B1 (ko) * 2006-06-30 2008-07-30 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법

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US6054355A (en) * 1997-06-30 2000-04-25 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device which includes forming a dummy gate
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