JP2005510072A5 - - Google Patents

Download PDF

Info

Publication number
JP2005510072A5
JP2005510072A5 JP2003545445A JP2003545445A JP2005510072A5 JP 2005510072 A5 JP2005510072 A5 JP 2005510072A5 JP 2003545445 A JP2003545445 A JP 2003545445A JP 2003545445 A JP2003545445 A JP 2003545445A JP 2005510072 A5 JP2005510072 A5 JP 2005510072A5
Authority
JP
Japan
Prior art keywords
act
aln
substrate
aln substrate
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003545445A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005510072A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2002/037135 external-priority patent/WO2003043780A2/en
Publication of JP2005510072A publication Critical patent/JP2005510072A/ja
Publication of JP2005510072A5 publication Critical patent/JP2005510072A5/ja
Pending legal-status Critical Current

Links

Images

JP2003545445A 2001-11-20 2002-11-20 基板表面を研磨するための方法 Pending JP2005510072A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33186801P 2001-11-20 2001-11-20
PCT/US2002/037135 WO2003043780A2 (en) 2001-11-20 2002-11-20 Method for polishing a substrate surface

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012022627A Division JP5628224B2 (ja) 2001-11-20 2012-02-06 基板表面を研磨するための方法

Publications (2)

Publication Number Publication Date
JP2005510072A JP2005510072A (ja) 2005-04-14
JP2005510072A5 true JP2005510072A5 (enExample) 2009-04-16

Family

ID=23295726

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2003545445A Pending JP2005510072A (ja) 2001-11-20 2002-11-20 基板表面を研磨するための方法
JP2012022627A Expired - Lifetime JP5628224B2 (ja) 2001-11-20 2012-02-06 基板表面を研磨するための方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012022627A Expired - Lifetime JP5628224B2 (ja) 2001-11-20 2012-02-06 基板表面を研磨するための方法

Country Status (8)

Country Link
US (2) US7037838B2 (enExample)
EP (1) EP1446263B1 (enExample)
JP (2) JP2005510072A (enExample)
AT (1) ATE418420T1 (enExample)
AU (1) AU2002365979A1 (enExample)
CA (1) CA2467806C (enExample)
DE (1) DE60230538D1 (enExample)
WO (1) WO2003043780A2 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US20060005763A1 (en) * 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
JP4511801B2 (ja) * 2003-03-14 2010-07-28 株式会社リコー Ｉｉｉ族窒化物結晶の研磨方法およびｉｉｉ族窒化物結晶および半導体デバイス
US8025808B2 (en) * 2003-04-25 2011-09-27 Saint-Gobain Ceramics & Plastics, Inc. Methods for machine ceramics
JP4752214B2 (ja) * 2004-08-20 2011-08-17 住友電気工業株式会社 エピタキシャル層形成用ＡｌＮ結晶の表面処理方法
JP4792802B2 (ja) * 2005-04-26 2011-10-12 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の表面処理方法
EP1885918B1 (en) * 2005-05-11 2017-01-25 North Carolina State University Methods of preparing controlled polarity group iii-nitride films
US20060288929A1 (en) * 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
US7670902B2 (en) * 2005-07-26 2010-03-02 Semiconductor Manufacturing International (Shanghai) Corporation Method and structure for landing polysilicon contact
RU2320466C2 (ru) * 2005-11-23 2008-03-27 Ооо "Нитридные Кристаллы" Способ полирования поверхности подложки
EP1960570A2 (en) 2005-11-28 2008-08-27 Crystal Is, Inc. Large aluminum nitride crystals with reduced defects and methods of making them
WO2007065018A2 (en) * 2005-12-02 2007-06-07 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
WO2007123735A1 (en) 2006-03-30 2007-11-01 Crystal Is, Inc. Methods for controllable doping of aluminum nitride bulk crystals
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
WO2008060505A1 (en) * 2006-11-15 2008-05-22 Cabot Microelectronics Corporation Methods for polishing aluminum nitride
EP2121244B1 (en) * 2006-12-20 2013-07-10 Saint-Gobain Ceramics & Plastics, Inc. Methods for machining inorganic, non-metallic workpieces
WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9028612B2 (en) 2010-06-30 2015-05-12 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
WO2008094464A2 (en) * 2007-01-26 2008-08-07 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US8210904B2 (en) * 2008-04-29 2012-07-03 International Business Machines Corporation Slurryless mechanical planarization for substrate reclamation
US7915178B2 (en) 2008-07-30 2011-03-29 North Carolina State University Passivation of aluminum nitride substrates
US20100314551A1 (en) * 2009-06-11 2010-12-16 Bettles Timothy J In-line Fluid Treatment by UV Radiation
EP2595940B1 (en) 2010-07-20 2019-11-13 Hexatech Inc. Polycrystalline aluminum nitride boule and method of production of a polycrystalline aluminum nitride material
US9299594B2 (en) 2010-07-27 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate bonding system and method of modifying the same
JP5319628B2 (ja) * 2010-08-26 2013-10-16 シャープ株式会社 窒化物半導体素子および半導体光学装置
JP2011049610A (ja) * 2010-12-10 2011-03-10 Sumitomo Electric Ind Ltd ＡｌＮ結晶の表面処理方法、ＡｌＮ結晶基板、エピタキシャル層付ＡｌＮ結晶基板および半導体デバイス
JP2014507363A (ja) 2010-12-14 2014-03-27 ヘクサテック，インコーポレイテッド 多結晶質窒化アルミニウム焼結体の熱膨張処理、および半導体製造へのその応用
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
WO2014151264A1 (en) 2013-03-15 2014-09-25 Crystal Is, Inc. Planar contacts to pseudomorphic electronic and optoelectronic devices
WO2016039116A1 (ja) * 2014-09-11 2016-03-17 株式会社トクヤマ 窒化アルミニウム単結晶基板の洗浄方法および積層体
JP6361747B2 (ja) 2015-02-02 2018-07-25 富士電機株式会社 炭化ケイ素半導体装置の製造方法及び炭化ケイ素半導体装置
US10249786B2 (en) * 2016-11-29 2019-04-02 Palo Alto Research Center Incorporated Thin film and substrate-removed group III-nitride based devices and method
DE112018005414T5 (de) 2017-11-10 2020-07-09 Crystal Is, Inc. Große, UV-Transparente Aluminiumnitrid-Einkristalle und Verfahren zu ihrer Herstellung
CN114667371B (zh) 2019-08-15 2025-05-13 晶化成半导体公司 氮化铝晶体的扩径
JP2021104547A (ja) * 2019-12-26 2021-07-26 ニッタ・デュポン株式会社 研磨スラリー
JP7709517B2 (ja) * 2020-07-29 2025-07-16 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 銅及びスルーシリコンビア（ｔｓｖ）化学機械平坦化（ｃｍｐ）のためのパッドインボトル（ｐｉｂ）技術
WO2023277103A1 (ja) * 2021-06-30 2023-01-05 京セラ株式会社 周期表第１３族元素窒化物結晶基板の製造方法
US20240352279A1 (en) * 2021-07-23 2024-10-24 Versum Materials Us, Llc Pad-in-a-bottle (pib) technology for copper barrier slurries
WO2023086783A1 (en) * 2021-11-10 2023-05-19 Versum Materials Us, Llc Pad-ln-a-bottle chemical mechanical planarization polishing with cost-effective non-porous solid polishing pads

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3629023A (en) 1968-07-17 1971-12-21 Minnesota Mining & Mfg METHOD OF CHEMICALLY POLISHING CRYSTALS OF II(b){14 VI(a) SYSTEM
JPH04355920A (ja) * 1991-01-31 1992-12-09 Shin Etsu Handotai Co Ltd 半導体素子形成用基板およびその製造方法
JP2986948B2 (ja) * 1991-04-15 1999-12-06 株式会社東芝 ＡｌＮ回路基板
JP3585941B2 (ja) * 1993-06-14 2004-11-10 イビデン株式会社 セラミックス基板の表面処理方法
EP0684106B1 (en) * 1994-05-23 2000-04-05 Sumitomo Electric Industries, Ltd. Method to produce a hard material coated wafer
US5597443A (en) * 1994-08-31 1997-01-28 Texas Instruments Incorporated Method and system for chemical mechanical polishing of semiconductor wafer
US5478436A (en) * 1994-12-27 1995-12-26 Motorola, Inc. Selective cleaning process for fabricating a semiconductor device
US5534462A (en) * 1995-02-24 1996-07-09 Motorola, Inc. Method for forming a plug and semiconductor device having the same
US5652176A (en) * 1995-02-24 1997-07-29 Motorola, Inc. Method for providing trench isolation and borderless contact
US5645682A (en) * 1996-05-28 1997-07-08 Micron Technology, Inc. Apparatus and method for conditioning a planarizing substrate used in chemical-mechanical planarization of semiconductor wafers
US5962343A (en) 1996-07-30 1999-10-05 Nissan Chemical Industries, Ltd. Process for producing crystalline ceric oxide particles and abrasive
JP3450683B2 (ja) * 1997-01-10 2003-09-29 株式会社東芝 半導体被処理面の調製方法
TW426556B (en) * 1997-01-24 2001-03-21 United Microelectronics Corp Method of cleaning slurry remnants left on a chemical-mechanical polish machine
US6063306A (en) 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
KR100574259B1 (ko) * 1999-03-31 2006-04-27 가부시끼가이샤 도꾸야마 연마제 및 연마 방법
US6379223B1 (en) 1999-11-29 2002-04-30 Applied Materials, Inc. Method and apparatus for electrochemical-mechanical planarization
WO2001058644A1 (en) * 2000-02-10 2001-08-16 Applied Materials, Inc. Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus
EP1129816A3 (en) * 2000-03-02 2003-01-15 Corning Incorporated Method for polishing ceramics
US6291351B1 (en) * 2000-06-28 2001-09-18 International Business Machines Corporation Endpoint detection in chemical-mechanical polishing of cloisonne structures
JP3787485B2 (ja) * 2000-06-30 2006-06-21 信越半導体株式会社 薄板の加工方法

Similar Documents

Publication Publication Date Title
CA2467806A1 (en) Method for polishing a substrate surface
TW419412B (en) Polishing system
KR100303676B1 (ko) 표면을청소하는방법
CN101370898B (zh) 用于氧化铟锡表面的化学机械抛光的组合物及方法
TW200805453A (en) Method for manufacturing epitaxial wafer
JPH06338484A (ja) シリコンウエーハの製造方法、およびその装置
CN108242396A (zh) 一种降低硅抛光片表面粗糙度的加工方法
CN104303272A (zh) 用于抛光模组的预化学机械平坦化的方法与设备
TWI283021B (en) A method of polishing a wafer of material
JPH09237771A (ja) ウエハーまたは基板材料の再生方法および再生設備
JP7766539B2 (ja) 表面処理組成物、表面処理方法、および半導体基板の製造方法
WO2005055302A1 (ja) 片面鏡面ウェーハの製造方法
TWI535802B (zh) 用於拋光大塊矽之組合物及方法
Bai et al. Parametric investigation into accommodate-sinking effect of cluster magnetorheological effect pad
JP2001358107A (ja) 再生ウェーハから半導体ウェーハへの変換法
CN111098224B (zh) 半导体基板及其表面研磨方法
JPH097987A (ja) 半導体ウェーハ研磨用研磨剤及び研磨方法
CN110303385B (zh) 基于液相抛光环境调控的单晶硅无损抛光方法
JP2010135524A (ja) 研削加工されたシリコン基盤の洗浄方法
JPH10256206A (ja) 洗浄具及び基板洗浄方法並びに基板洗浄装置
US5972863A (en) Slurry compositions for polishing wafers used in integrated circuit devices and cleaning compositions for removing electron wax after polishing
JP2003236743A (ja) 研磨用テンプレート
JP2005303060A (ja) リンス研磨溶液
JP2642538B2 (ja) 半導体ウエーハの製造装置
JPH01193170A (ja) 鏡面研磨方法