JP2014507363A - 多結晶質窒化アルミニウム焼結体の熱膨張処理、および半導体製造へのその応用 - Google Patents
多結晶質窒化アルミニウム焼結体の熱膨張処理、および半導体製造へのその応用 Download PDFInfo
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Abstract
【選択図】なし
Description
特定の実施形態において、多結晶質AINベース基板のCTEは、成長層のCTEおよび
成長する半導体材料のCTEとほぼ一致する範囲内であり得る。この処理の終わりでは、(たとえば、実質的に純粋なAINと異なるCTEを有する1つ以上の反応生成物を形成するために、実質的に純粋なAINのCTEと異なるCTEを有する添加材料と、またはAINと反応する前駆材料との組み合わせを介して、)この多結晶質ベース基板は、本明細書に記載のいずれかの適切な方法により調製することができる。
(式中、Lはx方向に沿った表面形状の長さを表す。)
このrmsの粗さは、一般に、記録された標準値におけるRqにより示され、かつ、ある分野、たとえば光学の分野においてシンボルσによりしばしば表される。表面形状z(x)は、計数化された式の点ziによる全ての現代器具にほぼ近接しているため、この上記の式は、計数式
(式中、Nは、計測された表面形状におけるデータの点である。)
ある実施形態において、非酸化ガスを、約1atm(760Torr)にて提供する。さらなる実施形態において、より低圧(すなわち、真空下)にてこの工程を実行することが可能である。この焼結工程を介してまたは焼結工程中の所定の期間にのみ特定の流量でこの非酸化ガスを提供することができる。特に、非酸化ガスを、約10立法センチメートル毎分(SCCM)〜約1,000SCCM、約25SCCM〜約750SCCM、約50SCM〜約500SCCM、約50SCCM〜約250SCCM、約50SCCM〜約150SCCMまたは約75SCCM〜約125SCCMの割合にて提供することができる。いくつかの実施形態において、この工程は、実質的に流れ(すなわち、停滞したガスの大気)がない状態で実行されてもよい。
Claims (46)
- その上に半導体材料を成長させるための熱処理多結晶質窒化アルミニウム基板を調製する方法であって、前記方法が、
前記窒化アルミニウムの熱膨張係数(CTE)と異なるCTEを有する第2の相材料の含有物と第1の相の窒化アルミニウムを組み合わせることと、
前記組み合わせた第1および第2の相をさらに処理し、同一の温度で実質的に純粋な窒化アルミニウムのCTEと異なるCTEを有する多相窒化アルミニウム材料を形成することと
を含む、方法。 - 前記さらなる処理が、
前記窒化アルミニウムおよび前記第2の相の材料を押圧し、押圧スラグを形成することと、
前記押圧スラグを焼結し、前記同一の温度で前記実質的に純粋な窒化アルミニウムのCTEと異なるCTEを有する焼結多相窒化アルミニウム材料を形成することと
を含む、請求項1に記載の方法。 - 前記押圧が、加熱のない状態で実行される、請求項2に記載の方法。
- 前記焼結ステップが、周囲ガスを排気したチャンバー内で実行される、請求項2に記載の方法。
- 前記焼結ステップが、N2雰囲気内で実行される、請求項4に記載の方法。
- 前記焼結多相窒化アルミニウム材料の少なくとも1つの表面を研磨することをさらに含む、請求項2に記載の方法。
- 前記多相窒化アルミニウム材料が、前記同一の温度で実質的に純粋な窒化アルミニウムのCTEと約10%以上の差で異なるCTEを有する、請求項1に記載の方法。
- 前記多相窒化アルミニウム材料が、前記同一の温度で前記実質的に純粋な窒化アルミニウム以外のIII族窒化物のCTEの約25%以内であるCTEを有する、請求項1に記載の方法。
- 前記III族窒化物材料が、窒化ガリウムを含む、請求項8に記載の方法。
- 前記第2の相が、窒化チタンを含む、請求項1に記載の方法。
- 前記窒化チタンが、前記熱処理多結晶質窒化アルミニウム基板に約5重量%以上含まれる、請求項10に記載の方法。
- 前記第2の相材料が、窒化アルミニウムと反応して反応生成物を形成する前駆材料の前記反応生成物であり、前記反応生成物が、前記窒化アルミニウム粒子のCTEと異なるCTEを有する請求項1に記載の方法。
- 前記反応生成物が、窒化アルミニウムおよび酸化アルミニウムの間の反応生成物である、請求項12に記載の方法。
- 中間基板上の半導体材料成長用の中間基板を調製する方法であって、前記方法が、
請求項1〜13のいずれか1項により調製される熱処理多結晶質窒化アルミニウム基板上に半導体成長層を被覆することを含み、
前記熱処理多結晶質窒化アルミニウム基板のCTEが、前記同一の温度で前記半導体成長層のCTEの約25%以内である、方法。 - 前記半導体成長層が、GaN、AlGaN、InGaN、InN、InAlGaN、AlInN、AlGaAs、GaP、GaAs、GaAsPおよびAlGAINPからなる群から選択される材料を含む、請求項14に記載の方法。
- 前記半導体成長層が、III族窒化物を含む、請求項14に記載の方法。
- 前記半導体成長層が、単一結晶材料を含む、請求項14に記載の方法。
- 前記半導体成長層および前記多結晶質窒化アルミニウムベース基板の間に配置され、または前記半導体成長層を覆うように配置される、1つ以上の追加的層を提供することをさらに含む、請求項14に記載の方法。
- 半導体材料を調製する方法であって、
請求項14〜18のいずれか1項により調製される中間基板上の半導体層を成長させることを含む、方法。 - 前記半導体層上に1つ以上のさらなる層を成長させることを含む、請求項19に記載の方法。
- 請求項19または請求項20の方法により調製される半導体材料を含むデバイス。
- 前記デバイスが、電子デバイス、光学デバイス、および光電子デバイスからなる群から選択される、請求項21に記載のデバイス。
- 前記デバイスが、発光ダイオード、レーザダイオード、高電子移動度トランジスタ(HEMT)、ヘテロ接合バイポーラトランジスタ(HBT)、無線周波回路、マクロ波回路、RF電力増幅器、高電圧スイッチング装置、光電検出器、太陽電池、スピン伝導電子装置(spin transport electronic)、MOSFET、MESFET、集積ロジック/化合物半導体デバイスからなる群から選択される、請求項21に記載のデバイス。
- 前記デバイスが、カラーディスプレイ、交通信号、自動車照明、航空照明、商用照明、住居照明、赤外線リモートデバイス、画像スキャナ、ビデオデバイス、写真デバイス、センサー、タッチスクリーン、紫外線殺菌および殺菌デバイス、紫外線治療デバイス、プリンター、機械式ビジョンデバイス、高密度光記憶ディスク、および磁気抵抗ランダムアクセスメモリデバイスからなる群から選択される、請求項21に記載のデバイス。
- 第1の相として多結晶質窒化アルミニウムを含む多相材料を含む熱処理基板であって、前記基板が、前記同一の温度で前記実質的に純粋な窒化アルミニウムの熱膨張係数(CTE)と約10%以上の差で異なるCTEを有する、基板。
- 第2の相として、窒化アルミニウムと化学的に反応せず、かつ前記同一の温度で前記実質的に純粋な窒化アルミニウムのCTEより大きいCTEを有する追加の材料を含む、請求項25に記載の熱処理基板。
- 前記第2の相が、前記基板の約5重量%以上含まれる、請求項26に記載の熱処理基板。
- 前記第2の相が、窒化チタンを含む、請求項26に記載の熱処理基板。
- 第2の相として、前記窒化アルミニウムおよび追加の材料の間の前記反応生成物を含み、前記反応生成物が、前記同一の温度で前記実質的に純粋な窒化アルミニウムのCTEより大きいCTEを有する、請求項25に記載の熱処理基板。
- 前記第2の相が、前記基板の約5重量%以上含まれる、請求項29に記載の熱処理基板。
- 前記第2の相が、前記窒化アルミニウムおよび酸化アルミニウムの間の反応生成物を含む、請求項29に記載の熱処理基板。
- 前記基板が、前記同一の温度で前記実質的に純粋な窒化ガリウムのCTEの約25重量%内のCTEを有する、請求項25に記載の熱処理基板。
- 前記基板の前記CTEが、前記同一の温度で前記実質的に純粋な窒化アルミニウムのCTEを約10%以上の差で超える、請求項25に記載の熱処理基板。
- 前記熱処理基板を被覆する半導体成長層をさらに含み、前記熱処理基板が、前記半導体成長層に熱的に一致するようなCTEを有する、請求項25に記載の熱処理基板。
- 前記半導体成長層が、前記同一の温度で前記実質的に純粋なCTEと約10%の差で異なるCTEを有する、請求項34に記載の熱処理基板。
- 前記半導体成長層および前記多結晶質窒化アルミニウムベース基板の両方のCTEが、前記同一の温度で前記実質的に純粋なCTEと約10%の差で超えるCTEを有する、請求項35に記載の方法。
- 前記熱処理基板のCTEが、前記同一の温度で前記半導体成長層のCTEの約25%内である、請求項34に記載の熱処理基板。
- 前記半導体成長層が、III族窒化物を含む、請求項34に記載の熱処理基板。
- 前記半導体成長層が、窒化ガリウムを含む、請求項38に記載の熱処理基板。
- 前記半導体成長層が、単一の結晶材料を含む、請求項38に記載の熱処理基板。
- 前記半導体成長層および前記熱処理基板の間に配置され、または前記半導体成長層を覆うように配置される、1つ以上の追加的層をさらに含む、請求項34に記載の熱処理基板。
- 前記多相材料が、押圧されかつ焼結された材料である、請求項25に記載の熱処理基板。
- 請求項34〜42のいずれか1項に記載の熱処理基板を含むデバイス。
- 前記デバイスが、電子デバイス、光デバイス、および光電子デバイスからなる群から選択される、請求項43に記載のデバイス。
- 前記デバイスが、発光ダイオード、レーザダイオード、高電子移動度トランジスタ(HEMT)、ヘテロ接合バイポーラトランジスタ(HBT)、無線周波回路、マクロ波回路、RF電力増幅器、高電圧スイッチング装置、光電検出器、太陽電池、スピン伝導電子装置(spin transport electronic)、MOSFET、MESFET、および集積ロジック/化合物半導体デバイスからなる群から選択される、請求項43に記載のデバイス。
- 前記デバイスが、カラーディスプレイ、交通信号、自動車照明、航空照明、商用照明、住居照明、赤外線リモートデバイス、画像スキャナ、ビデオデバイス、写真デバイス、センサー、タッチスクリーン、紫外線殺菌および殺菌デバイス、紫外線治療デバイス、プリンター、機械式ビジョンデバイス、高密度光記憶ディスク、および磁気抵抗ランダムアクセスメモリデバイスからなる群から選択される、請求項43に記載のデバイス。
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US8766274B2 (en) | 2014-07-01 |
JP6667490B2 (ja) | 2020-03-18 |
US20120146023A1 (en) | 2012-06-14 |
WO2012082729A1 (en) | 2012-06-21 |
JP2018080103A (ja) | 2018-05-24 |
KR20140017515A (ko) | 2014-02-11 |
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