JP5978548B2 - ダイヤモンド上の窒化ガリウム型ウェーハの製造方法 - Google Patents
ダイヤモンド上の窒化ガリウム型ウェーハの製造方法 Download PDFInfo
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- JP5978548B2 JP5978548B2 JP2014560054A JP2014560054A JP5978548B2 JP 5978548 B2 JP5978548 B2 JP 5978548B2 JP 2014560054 A JP2014560054 A JP 2014560054A JP 2014560054 A JP2014560054 A JP 2014560054A JP 5978548 B2 JP5978548 B2 JP 5978548B2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 50
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
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- C—CHEMISTRY; METALLURGY
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C30B25/16—Controlling or regulating
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
- C30B25/205—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer the substrate being of insulating material
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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Description
本願は、2012年2月29日に出願された米国特許仮出願第61/604,979号の優先権主張出願である。この米国特許仮出願を参照により引用し、その記載内容を本明細書の一部とする。
ワイドギャップ半導体技術は、ワイドギャップ半導体を利用した電子及び光電デバイス並びに製造技術に関する。
ステップ101「ネイティブ基板上のGaNを提供する」:方法100では、ステップ101においてエピウェーハ700を用意し、エピウェーハ700は、ネイティブ基板及びネイティブ基板の頂部上に被着されたGaNエピ層を有する。ウェーハ700の構造が図4Aに示されている。ウェーハ700は、ネイティブ基板701上に成長させたエピ層704を有する。エピ層704は、ネイティブ基板701の頂部上に被着された移行層708及び移行層708の頂部上に被着された活性層707から成る。活性層707は、バリヤ層706、二次元電子ガス705を有し、これら活性層は、オプションとして、後側バリヤ(図4Aには示されていない)をオプションとして含むのが良く、又、これら活性層は、RF高電子移動度トランジスタの性能を向上させるよう当該技術分野において知られているオプションとしてのAlN界面層(図4Aには示されていない)を含むのが良い。活性層中に含まれる物質としては、Ga原子、Al原子、In原子、B原子及びN原子を含む任意の二元、三元、四元合金が挙げられるが、これらには限定されない。一実施形態では、活性層は、有極性窒化ガリウムを含む少なくとも1つの層を有し、活性層のガリウムを末端基とする表面は、表面700Aの近くに位置する。一実施形態では、活性層は、有極性窒化ガリウムから成り、活性層のガリウムを末端基とする表面は、表面700Aの近くに位置する。移行層708は、ネイティブ基板701に隣接して位置する核生成層702及び核生成層702の頂部上に被着されたバッファ層703の少なくとも一部で構成されている。バッファ層703は、好ましくは、GaNで作られる。活性層707と移行層708との間の機能的境界709がバッファ703内に又はその縁のところに見える。一実施形態では、ウェーハ構造体700は、当該技術分野において知られているようにAlGaN/GaN・HEMTを呈し、活性層は、GaフェースGaN上に成長してある。本発明の一実施形態では、ネイティブ基板701は、珪素で作られている。明らかなこととして、ネイティブ基板701は又、本発明の精神から逸脱することなく、炭化珪素、サファイア及び窒化アルミニウムで作られても良い。本発明の一実施形態では、好ましい設計のウェーハ700(設計700には限定されない)がプロセス100の出発材料として用意されている。
ステップ101「インサイチュウSiNを含むネイティブ基板上のGaNを提供する」。方法200では、ステップ122においてエピウェーハ710を用意し、エピウェーハ710は、ネイティブ基板、ネイティブ基板の頂部上に被着させたGaNエピ層及びGaNエピ層の頂部上にインサイチュウ被着させた窒化珪素層を有する。ウェーハ710の例示の構造が図12に示されている。構造体700の対応の層と同一の機能を有するウェーハ710を有する層について付けられた符号は、ウェーハ700の符号と同一に保たれている。当業者には明らかなこととして、ウェーハ700について用いられる特定のエピ層設計(層厚さ、組成及び層の個数)は、本発明の精神から逸脱することなく、ウェーハ710とは異なっていても良い。ウェーハ710は、ネイティブ基板701上に成長させたエピ層704及びエピ層704の頂部上にインサイチュウ成長させた窒化珪素層711を有する。エピ層704は、ネイティブ基板701の頂部上に被着させた移行層708及び移行層708の頂部上に被着させた活性層707を有する。活性層707は、バリヤ層706、二次元電子ガス705を有し、これら活性層は、オプションとして、後側バリヤ(図12には示されていない)をオプションとして含むのが良く、又、これら活性層は、RF高電子移動度トランジスタの性能を向上させるよう当該技術分野において知られているオプションとしてのAlN界面層(図12には示されていない)を含むのが良い。活性層中に含まれる物質としては、Ga原子、Al原子、In原子、B原子及びN原子を含む任意の二元、三元、四元合金が挙げられるが、これらには限定されない。一実施形態では、活性層は、有極性窒化ガリウムを含む少なくとも1つの層を有し、活性層のガリウムを末端基とする表面は、表面700Aの近くに位置する。別の実施形態では、活性層707の結晶配列は、有極性、半極性又は無極性のうちの1つであって良い。移行層708は、ネイティブ基板701に隣接して位置する核生成層702及び核生成層702の頂部上に被着されたバッファ層703の少なくとも一部で構成されている。バッファ層703は、好ましくは、GaNで作られる。活性層707と移行層708との間の機能的境界709がバッファ703内に又はその縁のところに見える。一実施形態では、ウェーハ構造体700は、当該技術分野において知られているようにAlGaN/GaN・HEMTを呈し、活性層は、GaフェースGaN上に成長してある。本発明の一実施形態では、ネイティブ基板701は、珪素で作られている。明らかなこととして、ネイティブ基板701は又、本発明の精神から逸脱することなく、炭化珪素、サファイア及び窒化アルミニウムで作られても良い。本発明の一実施形態では、好ましい設計のウェーハ710(設計710には限定されない)が方法200の出発材料として用意される。ウェーハ710の頂面を表面804Aと称し、エピウェーハ710の底面を表面710Bと称する。
以下の説明において、ウェーハ700を出発材料として用いて(方法100)、GaN/ダイヤモンド人工ウェーハを製造する好ましい方法について説明する。方法200を実施する場合、ウェーハ700及び関連の表面700A,700Bは、それぞれ、ウェーハ710及び関連の表面710A,710Bで置き換えられるべきである。また、表面804A,805Aは、方法100が実施される場合、窒化珪素層804の表面を意味し、表面804Aは、方法200が実施される場合、インサイチュウ窒化珪素層711の表面を意味し、いずれの場合においても、表面805Aは、方法100が用いられる場合又は方法200が用いられる場合、ステップ101Cで被着させた多結晶シリコン層の表面である。
(a)第1の反り値が正であり且つ第2の反り値がゼロ又は負であるか反りの第2の値が負であり且つ第1の反り値がゼロ又は正であるかのいずれか、
(b)第1の反り値と第2の反り値の差の絶対値がミリメートル単位のウェーハ直径を100mmで除算して得られる比の2乗を10nmに除算して得られた値以下であること。数学的に表すと、|BOW1−BOW2|≦10μm・(D/100)2であり、この式において、BOW1は、第1の反り値であり、BOW2は、第2の反り値であり、Dは、ミリメートルで表したウェーハ直径である。(a)と(b)の両方が満たされる場合、ウェーハ720はウェーハ700と共に用いられ、ウェーハ720についてステップ108に進む。これらの2つの条件の両方が満たされなかった場合、ステップ103において新たなキャリヤウェーハ720を選択し、ステップ104,105を繰り返し実施し、ついには、反り条件が満たされ、選択したキャリヤウェーハ720をステップ108で使用することができるようにする。
なお、好ましい構成態様として、本発明を次のように構成することもできる。
1. 合成ダイヤモンド成長方法であって、
(a)排気手段を備えた真空チャンバを用意するステップを含み、
(b)窒化ガリウムの少なくとも1つの層を有する人工ウェーハを用意するステップを含み、前記ウェーハは、直径及び成長面を有し、
(c)前記ウェーハを保持する表面を備えた台を用意するステップを含み、前記台は、前記人工ウェーハに垂直な軸線に沿って回転するよう作動的に構成され、
(d)前記ウェーハを前記表面上に置くステップを含み、
(e)冷却状態のチャックを用意するステップを含み、前記チャックは、前記チャックの温度をモニタする手段を備え、
(f)前記台を前記チャック上に置くステップを含み、
(g)前記台と前記チャックとの間の隙間を維持するステップを含み、
(h)前記ウェーハの近くで引き伸ばされた直線一次元アレイの状態に配置された多数本の高融点金属フィラメントを用意するステップを含み、前記アレイは、前記成長面に平行であり、前記多数本のフィラメントは、前記成長面から25mm以下の距離を置いて配置され、
(i)反応ガスを前記チャンバに提供するステップを含み、前記反応ガスは、水素及び少なくとも1種類の炭素含有ガスを含み、前記反応ガスは、プロセス圧力を定め、
(j)電力を前記多数本の高融点金属フィラメントに供給するステップを含み、前記電力は、所望厚さの合成ダイヤモンドを成長させるのに十分な時間の間、1枚のウェーハについて3kW以上であり、前記冷却チャックは、前記チャック温度800℃未満に維持する、方法。
2. 前記成長面は、窒化珪素で構成されている、上記1記載の方法。
3. 前記プロセス圧力は、100トル未満である、上記1又は2記載の方法。
4. 前記人工ウェーハは、珪素を含む少なくとも1つの層を有する、上記1〜3のうちいずれか一に記載の方法。
5. 合成ダイヤモンド蒸着のために調製された基板であって、
(a)0.2mmを超える厚さのシリコンウェーハと、
(b)ガラスの層と、
(c)多結晶シリコンの層と、
(d)第1の窒化珪素層と、
(e)窒化ガリウムの少なくとも1つの層を含む多層構造体層と、
(f)100nm以下の厚さの第2の窒化珪素層とを有する、基板。
6. 前記窒化ガリウム層は、前記第1の窒化珪素に平行に且つこれに近接して位置するGaに向いた表面を備えている、上記5記載の基板。
7. 前記窒化ガリウム層の表面は、窒化ガリウムの無極性又は半極性表面である、上記5又は6記載の基板。
8. 前記ガラスは、1000℃を超える融点を有する、上記5〜7のうちいずれか一に記載の基板。
9. 前記第2の窒化珪素層は、インサイチュウ(in-situ )窒化珪素である、上記5〜8のうちいずれか一に記載の基板。
Claims (4)
- 合成ダイヤモンド成長方法であって、
(a)排気手段を備えた真空チャンバを用意するステップを含み、
(b)窒化ガリウムの少なくとも1つの層を有するウェーハを用意するステップを含み、前記ウェーハは、直径及び成長面を有し、
(c)前記ウェーハを保持する表面を備えた台を用意するステップを含み、前記台は、前記ウェーハに垂直な軸線に沿って回転するよう作動的に構成され、
(d)前記ウェーハを前記表面上に置くステップを含み、
(e)冷却状態のチャックを用意するステップを含み、前記チャックは、前記チャックの温度をモニタする手段を備え、
(f)前記台を前記チャック上に置くステップを含み、
(g)前記台と前記チャックとの間の隙間を維持するステップを含み、
(h)前記ウェーハの近くで引き伸ばされた直線一次元アレイの状態に配置された多数本の高融点金属フィラメントを用意するステップを含み、前記アレイは、前記ウェーハを保持する前記台の前記表面に平行であり、前記多数本の高融点金属フィラメントは、前記表面から25mm以下の距離を置いて配置され、
(i)反応ガスを前記チャンバに提供するステップを含み、前記反応ガスは、水素及び少なくとも1種類の炭素含有ガスを含み、前記反応ガスは、プロセス圧力を定め、
(j)電力を前記多数本の高融点金属フィラメントに供給するステップを含み、前記電力は、所望厚さの合成ダイヤモンドを成長させるのに十分な時間の間、1枚のウェーハについて3kW以上であり、前記冷却チャックは、前記台の前記表面を800℃未満に維持する、方法。 - 前記成長面は、窒化珪素で構成されている、請求項1記載の方法。
- 前記プロセス圧力は、100トル未満である、請求項1又は2記載の方法。
- 前記ウェーハは、珪素を含む少なくとも1つの層を有する、請求項1〜3のうちいずれか一に記載の方法。
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KR20140131549A (ko) | 2014-11-13 |
EP2820173A4 (en) | 2016-01-20 |
JP2015509479A (ja) | 2015-03-30 |
WO2013130873A1 (en) | 2013-09-06 |
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