CN102222690A - 氮化物系半导体晶片以及氮化物系半导体装置 - Google Patents
氮化物系半导体晶片以及氮化物系半导体装置 Download PDFInfo
- Publication number
- CN102222690A CN102222690A CN2011100971721A CN201110097172A CN102222690A CN 102222690 A CN102222690 A CN 102222690A CN 2011100971721 A CN2011100971721 A CN 2011100971721A CN 201110097172 A CN201110097172 A CN 201110097172A CN 102222690 A CN102222690 A CN 102222690A
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- Prior art keywords
- nitride semiconductor
- resistivity
- semiconductor layer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 140
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 139
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000009413 insulation Methods 0.000 claims description 75
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 40
- 229910002601 GaN Inorganic materials 0.000 claims description 36
- 239000013078 crystal Substances 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 238000001556 precipitation Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 34
- 230000015572 biosynthetic process Effects 0.000 description 24
- 239000000047 product Substances 0.000 description 23
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000003723 Smelting Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000002068 genetic effect Effects 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010096248A JP2011228442A (ja) | 2010-04-19 | 2010-04-19 | 窒化物系半導体ウエハ及び窒化物系半導体デバイス |
JP2010-096248 | 2010-04-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102222690A true CN102222690A (zh) | 2011-10-19 |
CN102222690B CN102222690B (zh) | 2017-05-24 |
Family
ID=44779195
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110097172.1A Active CN102222690B (zh) | 2010-04-19 | 2011-04-15 | 氮化物系半导体晶片以及氮化物系半导体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20110254014A1 (zh) |
JP (1) | JP2011228442A (zh) |
CN (1) | CN102222690B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107507856A (zh) * | 2016-06-14 | 2017-12-22 | 黄知澍 | 镓解理面iii族/氮化物磊晶结构及其主动元件与其制作方法 |
CN107546261A (zh) * | 2016-06-29 | 2018-01-05 | 江西省昌大光电科技有限公司 | 半绝缘GaN薄膜及高电子迁移率晶体管外延结构 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8723222B2 (en) * | 2011-07-19 | 2014-05-13 | Electronics And Telecommunications Research Institute | Nitride electronic device and method for manufacturing the same |
JP2013206976A (ja) | 2012-03-27 | 2013-10-07 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
JP6386454B2 (ja) * | 2013-06-06 | 2018-09-05 | 日本碍子株式会社 | 13族窒化物複合基板、半導体素子、および13族窒化物複合基板の製造方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004311913A (ja) * | 2003-04-02 | 2004-11-04 | Sumitomo Electric Ind Ltd | 窒化物系半導体エピタキシャル基板、その製造方法、及びhemt用基板 |
US20060049426A1 (en) * | 2004-09-08 | 2006-03-09 | Samsung Electro-Mechanics Co., Ltd. | Nitride based hetero-junction field effect transistor |
US20060226413A1 (en) * | 2005-04-11 | 2006-10-12 | Saxler Adam W | Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices |
CN1965400A (zh) * | 2004-06-10 | 2007-05-16 | 丰田合成株式会社 | 场效应晶体管、半导体器件、其制造方法和半导体晶体生长方法 |
JP2007142003A (ja) * | 2005-11-16 | 2007-06-07 | Ngk Insulators Ltd | Iii族窒化物結晶の作製方法、エピタキシャル基板における反り低減方法、エピタキシャル基板、および半導体素子 |
US20070138505A1 (en) * | 2005-12-12 | 2007-06-21 | Kyma Technologies, Inc. | Low defect group III nitride films useful for electronic and optoelectronic devices and methods for making the same |
CN101132042A (zh) * | 2007-09-11 | 2008-02-27 | 南京大学 | 提高掺氧硅基氮化物薄膜电致发光器件发光效率的方法 |
JP2008277655A (ja) * | 2007-05-02 | 2008-11-13 | Hitachi Cable Ltd | 半導体エピタキシャルウェハ及び電界効果トランジスタ |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005122234A1 (en) * | 2004-06-10 | 2005-12-22 | Toyoda Gosei Co., Ltd. | Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth |
US7615774B2 (en) * | 2005-04-29 | 2009-11-10 | Cree.Inc. | Aluminum free group III-nitride based high electron mobility transistors |
US20080067549A1 (en) * | 2006-06-26 | 2008-03-20 | Armin Dadgar | Semiconductor component |
US20100117118A1 (en) * | 2008-08-07 | 2010-05-13 | Dabiran Amir M | High electron mobility heterojunction device |
-
2010
- 2010-04-19 JP JP2010096248A patent/JP2011228442A/ja active Pending
-
2011
- 2011-03-14 US US13/046,874 patent/US20110254014A1/en not_active Abandoned
- 2011-04-15 CN CN201110097172.1A patent/CN102222690B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004311913A (ja) * | 2003-04-02 | 2004-11-04 | Sumitomo Electric Ind Ltd | 窒化物系半導体エピタキシャル基板、その製造方法、及びhemt用基板 |
CN1965400A (zh) * | 2004-06-10 | 2007-05-16 | 丰田合成株式会社 | 场效应晶体管、半导体器件、其制造方法和半导体晶体生长方法 |
US20060049426A1 (en) * | 2004-09-08 | 2006-03-09 | Samsung Electro-Mechanics Co., Ltd. | Nitride based hetero-junction field effect transistor |
US20060226413A1 (en) * | 2005-04-11 | 2006-10-12 | Saxler Adam W | Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices |
JP2007142003A (ja) * | 2005-11-16 | 2007-06-07 | Ngk Insulators Ltd | Iii族窒化物結晶の作製方法、エピタキシャル基板における反り低減方法、エピタキシャル基板、および半導体素子 |
US20070138505A1 (en) * | 2005-12-12 | 2007-06-21 | Kyma Technologies, Inc. | Low defect group III nitride films useful for electronic and optoelectronic devices and methods for making the same |
JP2008277655A (ja) * | 2007-05-02 | 2008-11-13 | Hitachi Cable Ltd | 半導体エピタキシャルウェハ及び電界効果トランジスタ |
CN101132042A (zh) * | 2007-09-11 | 2008-02-27 | 南京大学 | 提高掺氧硅基氮化物薄膜电致发光器件发光效率的方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107507856A (zh) * | 2016-06-14 | 2017-12-22 | 黄知澍 | 镓解理面iii族/氮化物磊晶结构及其主动元件与其制作方法 |
US10672763B2 (en) | 2016-06-14 | 2020-06-02 | Chih-Shu Huang | Epitaxial structure of Ga-face group III nitride, active device, and method for fabricating the same |
CN107507856B (zh) * | 2016-06-14 | 2020-11-03 | 黄知澍 | 镓解理面iii族/氮化物磊晶结构及其主动元件与其制作方法 |
CN107546261A (zh) * | 2016-06-29 | 2018-01-05 | 江西省昌大光电科技有限公司 | 半绝缘GaN薄膜及高电子迁移率晶体管外延结构 |
Also Published As
Publication number | Publication date |
---|---|
US20110254014A1 (en) | 2011-10-20 |
JP2011228442A (ja) | 2011-11-10 |
CN102222690B (zh) | 2017-05-24 |
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