AU2002365979A1 - Method for polishing a substrate surface - Google Patents

Method for polishing a substrate surface

Info

Publication number
AU2002365979A1
AU2002365979A1 AU2002365979A AU2002365979A AU2002365979A1 AU 2002365979 A1 AU2002365979 A1 AU 2002365979A1 AU 2002365979 A AU2002365979 A AU 2002365979A AU 2002365979 A AU2002365979 A AU 2002365979A AU 2002365979 A1 AU2002365979 A1 AU 2002365979A1
Authority
AU
Australia
Prior art keywords
substrate
polishing
substrate surface
cmp
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002365979A
Other languages
English (en)
Other versions
AU2002365979A8 (en
Inventor
Javier Martinez Lopez
Kenneth Morgan
Carlos J. Rojo
Leo J. Schowalter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rensselaer Polytechnic Institute
Original Assignee
Rensselaer Polytechnic Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rensselaer Polytechnic Institute filed Critical Rensselaer Polytechnic Institute
Publication of AU2002365979A1 publication Critical patent/AU2002365979A1/en
Publication of AU2002365979A8 publication Critical patent/AU2002365979A8/xx
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU2002365979A 2001-11-20 2002-11-20 Method for polishing a substrate surface Abandoned AU2002365979A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33186801P 2001-11-20 2001-11-20
US60/331,868 2001-11-20
PCT/US2002/037135 WO2003043780A2 (en) 2001-11-20 2002-11-20 Method for polishing a substrate surface

Publications (2)

Publication Number Publication Date
AU2002365979A1 true AU2002365979A1 (en) 2003-06-10
AU2002365979A8 AU2002365979A8 (en) 2003-06-10

Family

ID=23295726

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002365979A Abandoned AU2002365979A1 (en) 2001-11-20 2002-11-20 Method for polishing a substrate surface

Country Status (8)

Country Link
US (2) US7037838B2 (enExample)
EP (1) EP1446263B1 (enExample)
JP (2) JP2005510072A (enExample)
AT (1) ATE418420T1 (enExample)
AU (1) AU2002365979A1 (enExample)
CA (1) CA2467806C (enExample)
DE (1) DE60230538D1 (enExample)
WO (1) WO2003043780A2 (enExample)

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US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
JP4511801B2 (ja) * 2003-03-14 2010-07-28 株式会社リコー Ｉｉｉ族窒化物結晶の研磨方法およびｉｉｉ族窒化物結晶および半導体デバイス
US8025808B2 (en) * 2003-04-25 2011-09-27 Saint-Gobain Ceramics & Plastics, Inc. Methods for machine ceramics
JP4752214B2 (ja) * 2004-08-20 2011-08-17 住友電気工業株式会社 エピタキシャル層形成用ＡｌＮ結晶の表面処理方法
JP4792802B2 (ja) * 2005-04-26 2011-10-12 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の表面処理方法
EP1885918B1 (en) * 2005-05-11 2017-01-25 North Carolina State University Methods of preparing controlled polarity group iii-nitride films
US20060288929A1 (en) * 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
US7670902B2 (en) * 2005-07-26 2010-03-02 Semiconductor Manufacturing International (Shanghai) Corporation Method and structure for landing polysilicon contact
RU2320466C2 (ru) * 2005-11-23 2008-03-27 Ооо "Нитридные Кристаллы" Способ полирования поверхности подложки
EP1960570A2 (en) 2005-11-28 2008-08-27 Crystal Is, Inc. Large aluminum nitride crystals with reduced defects and methods of making them
WO2007065018A2 (en) * 2005-12-02 2007-06-07 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
WO2007123735A1 (en) 2006-03-30 2007-11-01 Crystal Is, Inc. Methods for controllable doping of aluminum nitride bulk crystals
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
WO2008060505A1 (en) * 2006-11-15 2008-05-22 Cabot Microelectronics Corporation Methods for polishing aluminum nitride
EP2121244B1 (en) * 2006-12-20 2013-07-10 Saint-Gobain Ceramics & Plastics, Inc. Methods for machining inorganic, non-metallic workpieces
WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9028612B2 (en) 2010-06-30 2015-05-12 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
WO2008094464A2 (en) * 2007-01-26 2008-08-07 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US8210904B2 (en) * 2008-04-29 2012-07-03 International Business Machines Corporation Slurryless mechanical planarization for substrate reclamation
US7915178B2 (en) 2008-07-30 2011-03-29 North Carolina State University Passivation of aluminum nitride substrates
US20100314551A1 (en) * 2009-06-11 2010-12-16 Bettles Timothy J In-line Fluid Treatment by UV Radiation
EP2595940B1 (en) 2010-07-20 2019-11-13 Hexatech Inc. Polycrystalline aluminum nitride boule and method of production of a polycrystalline aluminum nitride material
US9299594B2 (en) 2010-07-27 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate bonding system and method of modifying the same
JP5319628B2 (ja) * 2010-08-26 2013-10-16 シャープ株式会社 窒化物半導体素子および半導体光学装置
JP2011049610A (ja) * 2010-12-10 2011-03-10 Sumitomo Electric Ind Ltd ＡｌＮ結晶の表面処理方法、ＡｌＮ結晶基板、エピタキシャル層付ＡｌＮ結晶基板および半導体デバイス
JP2014507363A (ja) 2010-12-14 2014-03-27 ヘクサテック，インコーポレイテッド 多結晶質窒化アルミニウム焼結体の熱膨張処理、および半導体製造へのその応用
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
WO2014151264A1 (en) 2013-03-15 2014-09-25 Crystal Is, Inc. Planar contacts to pseudomorphic electronic and optoelectronic devices
WO2016039116A1 (ja) * 2014-09-11 2016-03-17 株式会社トクヤマ 窒化アルミニウム単結晶基板の洗浄方法および積層体
JP6361747B2 (ja) 2015-02-02 2018-07-25 富士電機株式会社 炭化ケイ素半導体装置の製造方法及び炭化ケイ素半導体装置
US10249786B2 (en) * 2016-11-29 2019-04-02 Palo Alto Research Center Incorporated Thin film and substrate-removed group III-nitride based devices and method
DE112018005414T5 (de) 2017-11-10 2020-07-09 Crystal Is, Inc. Große, UV-Transparente Aluminiumnitrid-Einkristalle und Verfahren zu ihrer Herstellung
CN114667371B (zh) 2019-08-15 2025-05-13 晶化成半导体公司 氮化铝晶体的扩径
JP2021104547A (ja) * 2019-12-26 2021-07-26 ニッタ・デュポン株式会社 研磨スラリー
JP7709517B2 (ja) * 2020-07-29 2025-07-16 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 銅及びスルーシリコンビア（ｔｓｖ）化学機械平坦化（ｃｍｐ）のためのパッドインボトル（ｐｉｂ）技術
WO2023277103A1 (ja) * 2021-06-30 2023-01-05 京セラ株式会社 周期表第１３族元素窒化物結晶基板の製造方法
US20240352279A1 (en) * 2021-07-23 2024-10-24 Versum Materials Us, Llc Pad-in-a-bottle (pib) technology for copper barrier slurries
WO2023086783A1 (en) * 2021-11-10 2023-05-19 Versum Materials Us, Llc Pad-ln-a-bottle chemical mechanical planarization polishing with cost-effective non-porous solid polishing pads

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Publication number Priority date Publication date Assignee Title
US3629023A (en) 1968-07-17 1971-12-21 Minnesota Mining & Mfg METHOD OF CHEMICALLY POLISHING CRYSTALS OF II(b){14 VI(a) SYSTEM
JPH04355920A (ja) * 1991-01-31 1992-12-09 Shin Etsu Handotai Co Ltd 半導体素子形成用基板およびその製造方法
JP2986948B2 (ja) * 1991-04-15 1999-12-06 株式会社東芝 ＡｌＮ回路基板
JP3585941B2 (ja) * 1993-06-14 2004-11-10 イビデン株式会社 セラミックス基板の表面処理方法
EP0684106B1 (en) * 1994-05-23 2000-04-05 Sumitomo Electric Industries, Ltd. Method to produce a hard material coated wafer
US5597443A (en) * 1994-08-31 1997-01-28 Texas Instruments Incorporated Method and system for chemical mechanical polishing of semiconductor wafer
US5478436A (en) * 1994-12-27 1995-12-26 Motorola, Inc. Selective cleaning process for fabricating a semiconductor device
US5534462A (en) * 1995-02-24 1996-07-09 Motorola, Inc. Method for forming a plug and semiconductor device having the same
US5652176A (en) * 1995-02-24 1997-07-29 Motorola, Inc. Method for providing trench isolation and borderless contact
US5645682A (en) * 1996-05-28 1997-07-08 Micron Technology, Inc. Apparatus and method for conditioning a planarizing substrate used in chemical-mechanical planarization of semiconductor wafers
US5962343A (en) 1996-07-30 1999-10-05 Nissan Chemical Industries, Ltd. Process for producing crystalline ceric oxide particles and abrasive
JP3450683B2 (ja) * 1997-01-10 2003-09-29 株式会社東芝 半導体被処理面の調製方法
TW426556B (en) * 1997-01-24 2001-03-21 United Microelectronics Corp Method of cleaning slurry remnants left on a chemical-mechanical polish machine
US6063306A (en) 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
KR100574259B1 (ko) * 1999-03-31 2006-04-27 가부시끼가이샤 도꾸야마 연마제 및 연마 방법
US6379223B1 (en) 1999-11-29 2002-04-30 Applied Materials, Inc. Method and apparatus for electrochemical-mechanical planarization
WO2001058644A1 (en) * 2000-02-10 2001-08-16 Applied Materials, Inc. Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus
EP1129816A3 (en) * 2000-03-02 2003-01-15 Corning Incorporated Method for polishing ceramics
US6291351B1 (en) * 2000-06-28 2001-09-18 International Business Machines Corporation Endpoint detection in chemical-mechanical polishing of cloisonne structures
JP3787485B2 (ja) * 2000-06-30 2006-06-21 信越半導体株式会社 薄板の加工方法

Also Published As

Publication number Publication date
JP5628224B2 (ja) 2014-11-19
CA2467806C (en) 2011-04-19
WO2003043780B1 (en) 2003-10-30
DE60230538D1 (de) 2009-02-05
ATE418420T1 (de) 2009-01-15
JP2005510072A (ja) 2005-04-14
EP1446263A2 (en) 2004-08-18
US20070289946A1 (en) 2007-12-20
WO2003043780A3 (en) 2003-08-28
JP2012134515A (ja) 2012-07-12
US20040033690A1 (en) 2004-02-19
US7037838B2 (en) 2006-05-02
WO2003043780A2 (en) 2003-05-30
HK1068840A1 (en) 2005-05-06
US7323414B2 (en) 2008-01-29
EP1446263B1 (en) 2008-12-24
AU2002365979A8 (en) 2003-06-10
CA2467806A1 (en) 2003-05-30

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase