AU2001294534A1 - Method of epitaxial growth of high quality nitride layers on silicon substrates - Google Patents
Method of epitaxial growth of high quality nitride layers on silicon substratesInfo
- Publication number
- AU2001294534A1 AU2001294534A1 AU2001294534A AU9453401A AU2001294534A1 AU 2001294534 A1 AU2001294534 A1 AU 2001294534A1 AU 2001294534 A AU2001294534 A AU 2001294534A AU 9453401 A AU9453401 A AU 9453401A AU 2001294534 A1 AU2001294534 A1 AU 2001294534A1
- Authority
- AU
- Australia
- Prior art keywords
- high quality
- epitaxial growth
- silicon substrates
- nitride layers
- quality nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09677762 | 2000-10-03 | ||
US09/677,762 US6391748B1 (en) | 2000-10-03 | 2000-10-03 | Method of epitaxial growth of high quality nitride layers on silicon substrates |
PCT/US2001/027743 WO2002029873A1 (en) | 2000-10-03 | 2001-10-02 | Method of epitaxial growth of high quality nitride layers on silicon substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001294534A1 true AU2001294534A1 (en) | 2002-04-15 |
Family
ID=24720016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001294534A Abandoned AU2001294534A1 (en) | 2000-10-03 | 2001-10-02 | Method of epitaxial growth of high quality nitride layers on silicon substrates |
Country Status (3)
Country | Link |
---|---|
US (1) | US6391748B1 (en) |
AU (1) | AU2001294534A1 (en) |
WO (1) | WO2002029873A1 (en) |
Families Citing this family (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040224459A1 (en) * | 1999-07-07 | 2004-11-11 | Matsushita Electric Industrial Co., Ltd. | Layered structure, method for manufacturing the same, and semiconductor element |
GB2363518A (en) * | 2000-06-17 | 2001-12-19 | Sharp Kk | A method of growing a nitride layer on a GaN substrate |
JP5095064B2 (en) * | 2000-08-04 | 2012-12-12 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Semiconductor film having nitride layer deposited on silicon substrate and method for manufacturing the same |
US6649287B2 (en) * | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
US7622322B2 (en) * | 2001-03-23 | 2009-11-24 | Cornell Research Foundation, Inc. | Method of forming an AlN coated heterojunction field effect transistor |
US20040029365A1 (en) * | 2001-05-07 | 2004-02-12 | Linthicum Kevin J. | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
GR1004675B (en) * | 2002-08-09 | 2004-09-13 | Idryma Erevnas Kai Technologia | Development of hetero-structures of nitride semiconductors that contain layers of nitride alloys of indium-argil-gallium, with use of the method of epitaxy with molecular beams with a source of nitrogen plasma |
US20040086802A1 (en) * | 2002-10-31 | 2004-05-06 | Gibson Gary A. | Two-dimensional materials and methods for ultra-high density data storage and retrieval |
US7115896B2 (en) * | 2002-12-04 | 2006-10-03 | Emcore Corporation | Semiconductor structures for gallium nitride-based devices |
WO2005060007A1 (en) * | 2003-08-05 | 2005-06-30 | Nitronex Corporation | Gallium nitride material transistors and methods associated with the same |
TWI240430B (en) * | 2003-10-20 | 2005-09-21 | United Epitaxy Co Ltd | Group III nitrides semiconductor device and manufacturing process |
US7803717B2 (en) * | 2003-10-23 | 2010-09-28 | North Carolina State University | Growth and integration of epitaxial gallium nitride films with silicon-based devices |
CN100380690C (en) * | 2003-11-20 | 2008-04-09 | 果尚志 | Method of growing trigroup nitride semiconductor hetero crystal structure on silicon base material |
US20050145851A1 (en) * | 2003-12-17 | 2005-07-07 | Nitronex Corporation | Gallium nitride material structures including isolation regions and methods |
US7071498B2 (en) * | 2003-12-17 | 2006-07-04 | Nitronex Corporation | Gallium nitride material devices including an electrode-defining layer and methods of forming the same |
US7618880B1 (en) * | 2004-02-19 | 2009-11-17 | Quick Nathaniel R | Apparatus and method for transformation of substrate |
CN100355027C (en) * | 2004-06-11 | 2007-12-12 | 中国科学院半导体研究所 | Method for growing aluminum nitride with high quality on silicon substrate |
US7361946B2 (en) * | 2004-06-28 | 2008-04-22 | Nitronex Corporation | Semiconductor device-based sensors |
US7339205B2 (en) * | 2004-06-28 | 2008-03-04 | Nitronex Corporation | Gallium nitride materials and methods associated with the same |
US7687827B2 (en) * | 2004-07-07 | 2010-03-30 | Nitronex Corporation | III-nitride materials including low dislocation densities and methods associated with the same |
US20060214289A1 (en) * | 2004-10-28 | 2006-09-28 | Nitronex Corporation | Gallium nitride material-based monolithic microwave integrated circuits |
US7247889B2 (en) | 2004-12-03 | 2007-07-24 | Nitronex Corporation | III-nitride material structures including silicon substrates |
KR101119019B1 (en) * | 2004-12-14 | 2012-03-12 | 주식회사 엘지실트론 | GaN semiconductor and manufacturing methods for the same |
SG124417A1 (en) * | 2005-02-02 | 2006-08-30 | Agency Science Tech & Res | Method and structure for fabricating III-V nitridelayers on silicon substrates |
US7776636B2 (en) * | 2005-04-25 | 2010-08-17 | Cao Group, Inc. | Method for significant reduction of dislocations for a very high A1 composition A1GaN layer |
US7365374B2 (en) * | 2005-05-03 | 2008-04-29 | Nitronex Corporation | Gallium nitride material structures including substrates and methods associated with the same |
US7226850B2 (en) * | 2005-05-19 | 2007-06-05 | Raytheon Company | Gallium nitride high electron mobility transistor structure |
KR100616686B1 (en) * | 2005-06-10 | 2006-08-28 | 삼성전기주식회사 | Method for manufacturing nitride-based semiconductor device |
KR20080072833A (en) * | 2005-10-04 | 2008-08-07 | 니트로넥스 코오포레이션 | Gallium nitride material transistors and methods for wideband applications |
EP1969635B1 (en) | 2005-12-02 | 2017-07-19 | Infineon Technologies Americas Corp. | Gallium nitride material devices and associated methods |
US7566913B2 (en) | 2005-12-02 | 2009-07-28 | Nitronex Corporation | Gallium nitride material devices including conductive regions and methods associated with the same |
KR100661602B1 (en) * | 2005-12-09 | 2006-12-26 | 삼성전기주식회사 | Method for forming the vertically structured gan type light emitting diode device |
EP1842940A1 (en) * | 2006-04-06 | 2007-10-10 | Interuniversitair Microelektronica Centrum ( Imec) | Method for forming a group III nitride material on a silicon substrate |
WO2008021451A2 (en) * | 2006-08-14 | 2008-02-21 | Aktiv-Dry Llc | Human-powered dry powder inhaler and dry powder inhaler compositions |
RU2316075C1 (en) | 2006-11-14 | 2008-01-27 | Закрытое Акционерное Общество "Светлана-Рост" | Method for growing multilayer semiconductor nitride heterostructure |
US8193020B2 (en) | 2006-11-15 | 2012-06-05 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition |
JP2010509177A (en) * | 2006-11-15 | 2010-03-25 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Method for heteroepitaxial growth of high quality N-plane GaN, InN and AlN and their alloys by metalorganic chemical vapor deposition |
US7598108B2 (en) * | 2007-07-06 | 2009-10-06 | Sharp Laboratories Of America, Inc. | Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers |
US7745848B1 (en) | 2007-08-15 | 2010-06-29 | Nitronex Corporation | Gallium nitride material devices and thermal designs thereof |
US8026581B2 (en) * | 2008-02-05 | 2011-09-27 | International Rectifier Corporation | Gallium nitride material devices including diamond regions and methods associated with the same |
US8343824B2 (en) * | 2008-04-29 | 2013-01-01 | International Rectifier Corporation | Gallium nitride material processing and related device structures |
US9012253B2 (en) | 2009-12-16 | 2015-04-21 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
US9705028B2 (en) | 2010-02-26 | 2017-07-11 | Micron Technology, Inc. | Light emitting diodes with N-polarity and associated methods of manufacturing |
JP5668339B2 (en) * | 2010-06-30 | 2015-02-12 | 住友電気工業株式会社 | Manufacturing method of semiconductor device |
US9076827B2 (en) | 2010-09-14 | 2015-07-07 | Applied Materials, Inc. | Transfer chamber metrology for improved device yield |
FR2977260B1 (en) * | 2011-06-30 | 2013-07-19 | Soitec Silicon On Insulator | PROCESS FOR PRODUCING A THICK EPITAXIAL LAYER OF GALLIUM NITRIDE ON A SILICON SUBSTRATE OR THE LIKE AND LAYER OBTAINED BY SAID METHOD |
US20130026480A1 (en) * | 2011-07-25 | 2013-01-31 | Bridgelux, Inc. | Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow |
CN102280370A (en) * | 2011-07-27 | 2011-12-14 | 中国科学院长春光学精密机械与物理研究所 | Method for growing non-polar surface AIN (aluminum nitrogen) template on silicon substrate |
GR1008013B (en) * | 2012-04-25 | 2013-10-22 | Ιδρυμα Τεχνολογιας Και Ερευνας (Ιτε), | Method for heteroepitaxial growth of iii metal-face polarity iii-nitrides on diamond substrates |
SG11201500330VA (en) | 2012-08-31 | 2015-02-27 | Oerlikon Advanced Technologies Ag | Method for depositing an aluminium nitride layer |
JP6322890B2 (en) | 2013-02-18 | 2018-05-16 | 住友電気工業株式会社 | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device |
CN104641453B (en) * | 2012-10-12 | 2018-03-30 | 住友电气工业株式会社 | Group III nitride composite substrate and its manufacture method and the method for manufacturing Group III nitride semiconductor device |
CN103915537B (en) * | 2013-01-09 | 2017-04-19 | 理想能源设备(上海)有限公司 | Growth method of compound semiconductor epitaxial layer on silicon substrate and device structure with epitaxial layer |
WO2014125688A1 (en) | 2013-02-18 | 2014-08-21 | 住友電気工業株式会社 | Group iii-nitride composite substrate and method of producing same, layered group iii-nitride composite substrate, as well as group iii-nitride semiconductor device and method of producing same |
US8878188B2 (en) * | 2013-02-22 | 2014-11-04 | Translucent, Inc. | REO gate dielectric for III-N device on Si substrate |
CN103695999B (en) * | 2013-12-02 | 2016-04-27 | 中国电子科技集团公司第五十五研究所 | Nitride single crystal film prepared by a kind of alternately supply source and method |
DE102014105303A1 (en) | 2014-04-14 | 2015-10-15 | Osram Opto Semiconductors Gmbh | Method for producing a layer structure as a buffer layer of a semiconductor device and layer structure as a buffer layer of a semiconductor device |
US20150349064A1 (en) * | 2014-05-06 | 2015-12-03 | Cambridge Electronics, Inc. | Nucleation and buffer layers for group iii-nitride based semiconductor devices |
US9806182B2 (en) | 2015-09-08 | 2017-10-31 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation using elemental diboride diffusion barrier regions |
US9673281B2 (en) | 2015-09-08 | 2017-06-06 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions |
US9799520B2 (en) | 2015-09-08 | 2017-10-24 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation via back side implantation |
US20170069721A1 (en) | 2015-09-08 | 2017-03-09 | M/A-Com Technology Solutions Holdings, Inc. | Parasitic channel mitigation using silicon carbide diffusion barrier regions |
US9773898B2 (en) | 2015-09-08 | 2017-09-26 | Macom Technology Solutions Holdings, Inc. | III-nitride semiconductor structures comprising spatially patterned implanted species |
US10211294B2 (en) | 2015-09-08 | 2019-02-19 | Macom Technology Solutions Holdings, Inc. | III-nitride semiconductor structures comprising low atomic mass species |
US9627473B2 (en) | 2015-09-08 | 2017-04-18 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation in III-nitride material semiconductor structures |
US9704705B2 (en) | 2015-09-08 | 2017-07-11 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation via reaction with active species |
US9728610B1 (en) | 2016-02-05 | 2017-08-08 | Infineon Technologies Americas Corp. | Semiconductor component with a multi-layered nucleation body |
FR3049762B1 (en) | 2016-04-05 | 2022-07-29 | Exagan | SEMICONDUCTOR STRUCTURE BASED ON III-N MATERIAL |
US9779935B1 (en) | 2016-04-05 | 2017-10-03 | Infineon Technologies Austria Ag | Semiconductor substrate with stress relief regions |
US10096473B2 (en) * | 2016-04-07 | 2018-10-09 | Aixtron Se | Formation of a layer on a semiconductor substrate |
US9917156B1 (en) | 2016-09-02 | 2018-03-13 | IQE, plc | Nucleation layer for growth of III-nitride structures |
TWI636165B (en) | 2017-08-04 | 2018-09-21 | 財團法人工業技術研究院 | Epitaxial wafer |
JP6783990B2 (en) * | 2017-09-07 | 2020-11-11 | 豊田合成株式会社 | Method for manufacturing group III nitride semiconductor device and method for manufacturing substrate |
US11038023B2 (en) | 2018-07-19 | 2021-06-15 | Macom Technology Solutions Holdings, Inc. | III-nitride material semiconductor structures on conductive silicon substrates |
JP7132156B2 (en) * | 2019-03-07 | 2022-09-06 | 株式会社東芝 | semiconductor equipment |
KR20230164155A (en) * | 2021-04-02 | 2023-12-01 | 어플라이드 머티어리얼스, 인코포레이티드 | Nucleation layers for growth of gallium-and-nitrogen-containing regions |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4596626A (en) | 1983-02-10 | 1986-06-24 | The United States Of America As Represented By The United States National Aeronautics And Space Administration | Method of making macrocrystalline or single crystal semiconductor material |
JPH0727861B2 (en) | 1987-03-27 | 1995-03-29 | 富士通株式会社 | Method for growing group III compound semiconductor crystal |
DE68920853T2 (en) | 1988-11-28 | 1995-05-24 | Fujitsu Ltd | Process for the growth of epitaxial layers. |
US4977103A (en) | 1989-08-24 | 1990-12-11 | At&T Bell Laboratories | Method of making an article comprising a III/V semiconductor device |
US5013685A (en) | 1989-11-02 | 1991-05-07 | At&T Bell Laboratories | Method of making a non-alloyed ohmic contact to III-V semiconductors-on-silicon |
CA2037198C (en) | 1990-02-28 | 1996-04-23 | Katsuhide Manabe | Light-emitting semiconductor device using gallium nitride group compound |
JP3352712B2 (en) * | 1991-12-18 | 2002-12-03 | 浩 天野 | Gallium nitride based semiconductor device and method of manufacturing the same |
US5262361A (en) | 1992-01-07 | 1993-11-16 | Texas Instruments Incorporated | Via filling by single crystal aluminum |
GB2323209A (en) * | 1997-03-13 | 1998-09-16 | Sharp Kk | Molecular beam epitaxy apparatus and method |
US5831277A (en) * | 1997-03-19 | 1998-11-03 | Northwestern University | III-nitride superlattice structures |
KR20010021494A (en) * | 1997-07-03 | 2001-03-15 | 추후제출 | Thermal mismatch compensation to produce free standing substrates by epitaxial deposition |
JP3813740B2 (en) * | 1997-07-11 | 2006-08-23 | Tdk株式会社 | Substrates for electronic devices |
US6064078A (en) * | 1998-05-22 | 2000-05-16 | Xerox Corporation | Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities |
US6176925B1 (en) * | 1999-05-07 | 2001-01-23 | Cbl Technologies, Inc. | Detached and inverted epitaxial regrowth & methods |
US6291318B1 (en) * | 1999-10-05 | 2001-09-18 | National Research Council Of Canada | Growth of GaN on sapphire with MSE grown buffer layer |
-
2000
- 2000-10-03 US US09/677,762 patent/US6391748B1/en not_active Expired - Fee Related
-
2001
- 2001-10-02 WO PCT/US2001/027743 patent/WO2002029873A1/en active Application Filing
- 2001-10-02 AU AU2001294534A patent/AU2001294534A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US6391748B1 (en) | 2002-05-21 |
WO2002029873A1 (en) | 2002-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU2001294534A1 (en) | Method of epitaxial growth of high quality nitride layers on silicon substrates | |
AU2001247389A1 (en) | Iii-v nitride substrate boule and method of making and using the same | |
AU2001279163A1 (en) | Method of controlling stress in gallium nitride films deposited on substrates | |
HK1088715A1 (en) | Single crystal gallium nitride substrate, method of growing the same and method of producing the same | |
AU2003255613A1 (en) | Method for epitaxial growth of a gallium nitride film separated from its substrate | |
AU2152000A (en) | Fabrication of gallium nitride layers on silicon | |
AU2001236076A1 (en) | Production method of iii nitride compound semiconductor substrate and semiconductor device | |
AU2002252566A1 (en) | Method and apparatus for growing submicron group iii nitride structures utilizing hvpe techniques | |
AU7844100A (en) | Single step process for epitaxial lateral overgrowth of nitride based materials | |
AU4556599A (en) | Fabrication of gallium nitride semiconductor layers by lateral growth from trench sidewalls | |
AU2001248803A1 (en) | Method of manufacturing group-iii nitride compound semiconductor device | |
AU2002354254A1 (en) | Method for making nitride semiconductor substrate and method for making nitride semiconductor device | |
AU7699300A (en) | Silicon carbide epitaxial layers grown on substrates offcut towards <1100> | |
AU2001244643A1 (en) | Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element | |
AU2001241108A1 (en) | Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element | |
AU2001234169A1 (en) | Group iii nitride compound semiconductor and method for manufacturing the same | |
EP1456871A4 (en) | Susceptor for epitaxial growth and epitaxial growth method | |
AU2002354485A1 (en) | Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same | |
AU2001266131A1 (en) | Preparation method of a coating of gallium nitride | |
EP1501117A4 (en) | Substrate for growing gallium nitride, method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate | |
AU1801100A (en) | Method for growing single crystal of silicon carbide | |
AU2001224025A1 (en) | Group iii nitride compound semiconductor light-emitting device and method for producing the same | |
CA2412419A1 (en) | Improved buffer for growth of gan on sapphire | |
AU2003299500A1 (en) | Hafnium nitride buffer layers for growth of gan on silicon | |
AU2002245268A1 (en) | Methods for growth of relatively large step-free sic crystal surfaces |