JP2005509280A - 複数の半導体基板の高圧加工用チャンバ - Google Patents
複数の半導体基板の高圧加工用チャンバ Download PDFInfo
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- JP2005509280A JP2005509280A JP2003533320A JP2003533320A JP2005509280A JP 2005509280 A JP2005509280 A JP 2005509280A JP 2003533320 A JP2003533320 A JP 2003533320A JP 2003533320 A JP2003533320 A JP 2003533320A JP 2005509280 A JP2005509280 A JP 2005509280A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
Abstract
カセットは、少なくとも2つの半導体基板を収容するようになっている。チャンバ閉鎖体は、チャンバハウジングに結合されている。
運転時には、半導体基板の高圧加工のための閉鎖状態を提供すべく、チャンバ閉鎖体は、チャンバハウジングとともにシールされている。
Description
Claims (21)
- 複数の半導体基板を加工するための高圧加工チャンバであって、以下のものを備えたチャンバ。
a チャンバハウジング
b チャンバハウジングに対して取り外しができるように取り付けられており、少なくとも2つの半導体基板を収容するようにした第1カセット
c チャンバハウジングに結合されたチャンバ閉鎖体であって、運転中に、半導体基板の高圧加工のための閉鎖状態を提供できるよう、チャンバ閉鎖体が、チャンバハウジングとともにシールされている、チャンバ閉鎖体 - 請求項1に記載の高圧加工チャンバであって、
チャンバハウジングとドアから形成されている囲繞体が、超臨界加工のための環境を提供することを特徴とする、高圧加工チャンバ。 - 請求項1に記載の高圧加工チャンバであって、
チャンバハウジングとドアから形成されている囲繞体が、超臨界状態より低い高圧加工のための環境を提供することを特徴とする、高圧加工チャンバ。 - 請求項1に記載の高圧加工チャンバであって、
複数の半導体基板のうち少なくとも1つが、半導体ウエハを備えており、
さらに、チャンバハウジングと第1カセットが、半導体ウエハを収容するようにしたことを特徴とする、高圧加工チャンバ。 - 請求項1に記載の高圧加工チャンバであって、
複数の半導体基板のうち少なくとも1つが、半導体パックを備えており、
さらにチャンバハウジングと第1カセットが、半導体パックを収容するようにしたことを特徴とする、高圧加工チャンバ。 - 請求項1に記載の高圧加工チャンバであって、
複数の半導体基板のうち少なくとも1つが、複数の半導体デバイスを固定するためのトレイ皿を備えており、
さらにチャンバハウジングと第1カセットが、トレイ皿を収容するようにしたことを特徴とする、高圧加工チャンバ。 - 請求項1に記載の高圧加工チャンバであって、
第1カセットを、第2カセットに置き換え可能であることを特徴とする、高圧加工チャンバ。 - 請求項7に記載の高圧加工チャンバであって、
運転中に、第1カセットと第2カセットを取り付けたり取り外したりするロボットを設置したことを特徴とする、高圧加工チャンバ。 - 請求項1に記載の高圧加工チャンバであって、
第1カセットが、噴射ノズル配列体を備えたことを特徴とする、高圧加工チャンバ。 - 請求項1に記載の高圧加工チャンバであって、
第1カセットに、流体出口配列体を備えたことを特徴とする、高圧加工チャンバ。 - 請求項1に記載の高圧加工チャンバであって、
第1カセットに、噴射ノズル配列体および流体出口配列体を備えたことを特徴とする、高圧加工チャンバ。 - 請求項11に記載の高圧加工チャンバであって、
噴射ノズル配列体および流体出口配列体が、運転中に、複数の半導体基板の近傍に加工用流体の流れを発生させることを特徴とする、高圧加工チャンバ。 - 請求項12に記載の高圧加工チャンバであって、
加工用流体の流れが、複数の半導体基板のそれぞれを横断する流れを備えていることを特徴とする、高圧加工チャンバ。 - 請求項13に記載の高圧加工チャンバであって、
ある1つの半導体基板を横断する流れが、当該半導体基板の1つの側よりガス噴射がなされ、当該半導体基板のその反対側においてガス吸収がなされるようにされていることを特徴とする、高圧加工チャンバ。 - 請求項1に記載の高圧加工チャンバであって、
チャンバハウジングは、長手方向に第1と第2の端面を持った概略円筒形状のものを備えていることを特徴とする、高圧加工チャンバ。 - 請求項15に記載の高圧加工チャンバであって、
チャンバハウジングは、概略円筒形状の長手方向の第1端面が、ドーム形天井面を備えていることを特徴とする、高圧加工チャンバ。 - 請求項15に記載の高圧加工チャンバであって、
チャンバ閉鎖体は、チャンバハウジングの概略円筒形の第2長手方向端面に対してシールするようにされていることを特徴とする、高圧加工チャンバ。 - 請求項15に記載の高圧加工チャンバであって、
チャンバ閉鎖体は、ドーム形天井面を備えていることを特徴とする、高圧加工チャンバ。 - 複数の半導体基板を加工するための高圧加工チャンバであって、以下のものを備えたチャンバ。
a チャンバハウジング
b チャンバハウジングに対して取り外しができるように取り付けられており、少なくとも2つの半導体基板を収容するようにした第1カセット
c チャンバハウジングに結合されたチャンバ閉鎖体であって、運転中に、半導体基板の高圧加工のための閉鎖状態を提供できるよう、チャンバ閉鎖体が、チャンバハウジングとともにシールされている、チャンバ閉鎖体
d 噴射ノズル配列体および流体出口配列体であって、噴射ノズル配列体および流体出口配列体が、運転中に、複数の半導体基板の近傍に加工用流体の流れを発生させるように、チャンバハウジング内に結合された、噴射ノズル配列体および流体出口配列体 - 複数の半導体基板を加工するための高圧加工チャンバであって、以下のものを備えたチャンバ。
a チャンバハウジング
b チャンバハウジングに対して取り外しができるように取り付けられており、少なくとも2つの半導体基板を収容するようにした第1カセット
c チャンバハウジングに結合されたチャンバ閉鎖体であって、
運転中に、半導体基板の高圧加工のための閉鎖状態を提供できるよう、チャンバ閉鎖体が、チャンバハウジングとともにシールされている、チャンバ閉鎖体
d チャンバハウジングに結合されたロボットであって、高圧加工の前に、第1カセットをチャンバハウジングの内部に取り付け、高圧加工後に、第1カセットを取り外し移動するようにされているロボット - 複数の半導体基板を加工するための高圧加工チャンバであって、以下のものを備えたチャンバ。
a チャンバハウジング
b チャンバハウジングに対して取り外しができるように取り付けられており、少なくとも2つの半導体基板を収容するようにした第1カセット
c チャンバハウジングに結合されたチャンバ閉鎖体であって、運転中に、半導体基板の高圧加工のための閉鎖状態を提供できるよう、チャンバ閉鎖体が、チャンバハウジングとともにシールされている、チャンバ閉鎖体
d 噴射ノズル配列体および流体出口配列体であって、噴射ノズル配列体および流体出口配列体が、運転中に、複数の半導体基板の近傍に加工用流体の流れを発生させるように、チャンバハウジング内に結合された、噴射ノズル配列体および流体出口配列体
e チャンバハウジングに結合されたロボットであって、高圧加工の前に、第1カセットをチャンバハウジングの内部に取り付け、高圧加工後に、第1カセットを取り外し移動するようにされているロボット
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US09/970,309 US20040040660A1 (en) | 2001-10-03 | 2001-10-03 | High pressure processing chamber for multiple semiconductor substrates |
PCT/US2002/031710 WO2003030219A2 (en) | 2001-10-03 | 2002-10-03 | High pressure processing chamber for multiple semiconductor substrates |
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JP2005509280A true JP2005509280A (ja) | 2005-04-07 |
JP2005509280A5 JP2005509280A5 (ja) | 2006-01-05 |
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US (1) | US20040040660A1 (ja) |
EP (1) | EP1501961A4 (ja) |
JP (1) | JP2005509280A (ja) |
KR (1) | KR20040037245A (ja) |
CN (1) | CN1599807A (ja) |
AU (1) | AU2002334841A1 (ja) |
CA (1) | CA2462429A1 (ja) |
TW (1) | TW559879B (ja) |
WO (1) | WO2003030219A2 (ja) |
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Also Published As
Publication number | Publication date |
---|---|
KR20040037245A (ko) | 2004-05-04 |
EP1501961A2 (en) | 2005-02-02 |
CA2462429A1 (en) | 2003-04-10 |
CN1599807A (zh) | 2005-03-23 |
US20040040660A1 (en) | 2004-03-04 |
WO2003030219A3 (en) | 2004-11-18 |
AU2002334841A1 (en) | 2003-04-14 |
WO2003030219A2 (en) | 2003-04-10 |
EP1501961A4 (en) | 2005-09-28 |
TW559879B (en) | 2003-11-01 |
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