CN1599807A - 用于多个半导体衬底的高压处理室 - Google Patents

用于多个半导体衬底的高压处理室 Download PDF

Info

Publication number
CN1599807A
CN1599807A CNA028196449A CN02819644A CN1599807A CN 1599807 A CN1599807 A CN 1599807A CN A028196449 A CNA028196449 A CN A028196449A CN 02819644 A CN02819644 A CN 02819644A CN 1599807 A CN1599807 A CN 1599807A
Authority
CN
China
Prior art keywords
chamber
high pressure
casket
pressure processing
enclosure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA028196449A
Other languages
English (en)
Inventor
M·A·比伯格
F·P·莱曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN1599807A publication Critical patent/CN1599807A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support

Abstract

一种用于处理多个半导体衬底的高压处理室，该处理室包含室外壳、匣和封闭物。匣可拆卸地连接在室外壳上。该匣构成为至少容纳两个半导体衬底。封闭物连接在室外壳上。构成封闭物使得在操作中，封闭物与室外壳密封在一起，从而为半导体衬底的高压处理提供封闭室。

Description

用于多个半导体衬底的高压处理室
发明领域
本发明涉及用于半导体衬底的高压处理室的领域。更详细地说，本发明涉及半导体衬底高压处理室领域中一种具有同时处理多个半导体衬底的处理能力的高压处理室。
发明背景
最近，对用于半导体衬底的超临界处理的行业有所发展，这些处理例如有光致抗蚀剂清除，清洗剂烘干和光致抗蚀剂显影。超临界处理是一种高压处理，其压力和温度等于或大于临界压力和临界温度。在临界温度和临界压力以上没有液相和气相，取而代之的是一种超临界相。
典型的半导体衬底是半导体晶片。半导体晶片有薄的横截面和较大的直径。目前，半导体晶片直径可达到300毫米。由于半导体显影和半导体处理设备的资金费用，所以，半导体处理必须是高效、可靠和经济的。
因此，用于多个半导体制底的半导体处理的超临界处理系统必须具有高效、可靠和经济的高压处理室。
所需要的就是一种用于处理多个半导体衬底的高效、可靠和经济的高压处理室。
发明内容
本发明是一种用于处理多个半导体衬底的高压处理室，该高压处理室包含室外壳、匣和封闭物。匣可拆卸地连接在室外壳上。该匣构成为至少容纳两个半导体衬底。封闭物连接在室外壳上。封闭物构成为在操作中与室外壳密封，从而为半导体衬底的高压处理提供封闭室。
附图的简要说明
图1显示了本发明较佳的高压处理室和升降机械装置。
图2A和2B显示了本发明的锁定环。
图3进一步显示了本发明的较佳的高压处理室。
图4显示了本发明较佳的匣。
图5A和图5B显示了本发明的室外壳，第一和第二个匣和机械手。
图6A和图6B显示了本发明的注入喷嘴装置和流体排泄装置。
图7显示了本发明的超临界处理系统。
图8显示了本发明的第一可替代高压处理室。
图9显示了本发明的第一可替代匣。
图10显示了本发明的第二可替代匣。
优选实施例的详细说明
优选地，本发明的较佳高压处理室同时处理多个半导体衬底。优选地，半导体衬底包含半导体晶片。另外，半导体衬底可包含其他的半导体衬底，例如半导体圆盘。作为更进一步的选择，半导体衬底可包含托盘，每个托盘都可以容纳多个半导体器件。
优选地，本发明的较佳高压处理室提供超临界处理环境。更优选地，该较佳高压处理室提供超临界CO2处理环境。优选地，超临界CO2处理环境包含用于烘干显影的光致抗蚀剂的烘干环境，该光致抗蚀剂已经被清洗，但是没有烘干。可选择的是，超临界CO2处理环境包含可选择的用于其他半导体烘干处理的烘干环境，例如烘干MEMS器件的环境。另外可选择的是，超临界CO2处理环境包含光致抗蚀剂显影环境。作为更进一步的选择，超临界CO2处理环境包含半导体清洗环境，例如用于光致抗蚀剂和残留物的清洗，或者用于化学机械平面化法(CMP)的残留物的清洗。
本发明的高压处理室组件如图1所示。高压处理室组件10包含较佳的高压处理室12和盖升降机械装置14。较佳的高压处理室12包含室外壳16，室盖18，锁定环20，较佳的匣22和第一O型环封口26。优选地，室外壳16和室盖18由不锈钢组成。优选地，锁定环20由高拉伸强度钢组成。优选地，较佳的匣22由不锈钢组成。可选择的是，较佳的匣22由一种抗腐蚀的金属组成。作为进一步的选择，较佳的匣22由一种抗腐蚀的聚合物材料组成。
盖升降机械装置14与室盖18连接。锁定环20与室外壳16连接。当较佳的高压处理室12闭合时，锁定环20将室外壳16和室盖18连接起来形成封闭处理室24。较佳的匣22连接到室外壳16的内部。
在使用中，锁定环20将室盖18锁到室外壳16上。锁定环20也在室盖18和室外壳16之间保持密封力，从而防止封闭处理室24中的高压流体从第一O型环封口26泄漏。当锁定环20从室盖18脱离时，盖升降机械装置14就会拉起盖18，并且将盖18从室外壳16上移开。
图2A和图2B进一步显示了本发明的锁定环20。锁定环20包含不连续螺纹和唇部21。不连续螺纹包含啮合面23，啮合面与室外壳16(图1)上相应的组件啮合。
图3进一步显示了高压处理室10。在工作中，较佳的匣22容纳半导体晶片28较好。优选地，机械手(图中没有画出)将较佳的匣22加载进室外壳16，然后缩回。盖升降机械装置14(图1)将室盖18降到室外壳16上。紧接着，锁定环20将室盖18和室外壳16锁住并且密封。随后，优选地，半导体晶片在超临界环境中被处理。下一步，盖升降机械装置14拉起室盖18。最后，机械手将较佳的匣22从室外壳16中移除。
图4进一步显示了本发明较佳的匣22。较佳的匣22包含匣框架30和固定棒32。匣框架30包含晶片支撑槽34和升降组件36。优选地，固定棒32通过铰链38连接到匣框架30。优选地，在使用中，半导体晶片28(图中虚线所示)被加载进较佳的匣22。更好的，经过半导体晶片28从前端开口标准仓(FOUP)到较佳的匣22的转移，半导体晶片28被加载进较佳的匣22。优选地，一旦半导体晶片被加载进较佳的匣22，固定棒32就会迅速抓住匣框架30中的固定槽40。
图5A和5B显示了本发明的自动处理装置。自动处理装置41包含室外壳16，机械手42，和第一匣44、第二匣46。机械手42包含机械手基座48，垂直运动单元49，机械臂50和叉状匣接触面52。机械手基座48为机械臂50提供旋转运动A。垂直运动单元49为机械臂50提供垂直运动B。在处理之前，第一匣44和第二匣46先被加载半导体晶片28。在操作中，机械臂50通过第一匣44的升降组件36伸出叉状匣接触面52，举起第一匣44，将第一匣44放到室外壳16上某个位置，再将第一匣44降低放进室外壳16中，然后缩回叉状匣接触面52。紧接着，第一匣44中的半导体晶片28被处理。下一步，机械手42通过第一匣44的升降组件36伸出叉状匣接触面52，从室外壳16中取出第一匣44。随后，机械手42用类似于第一匣44的操作方法来操作装有更多半导体晶片28的第二匣46。
图6A和6B显示了本发明的注入喷嘴装置和流体排泄装置。优选地，注入喷嘴装置54和流体排泄装置56位于室外壳16内。可选择的是，注入喷嘴装置54形成较佳的匣22(图4)的-部分。作为进一步的选择，流体排泄装置56形成较佳的匣22(图4)的一部分。注入喷嘴装置54包含贮槽58和注入喷嘴60。流体排泄装置56包含流体出口62和排水管64。在操作中，注入喷嘴装置54和流体排泄装置56一起工作，提供流过半导体晶片28的处理流体流66。
图7显示了本发明的超临界处理系统。该超临界处理系统200包括较佳的高压处理室12，压力室加热器204，二氧化碳供给装置206，循环回路208，循环泵210，化学剂和清洗剂供给装置212，分离容器214，液体/固体废物收集容器217和液化/净化装置219。二氧化碳供给装置206包括二氧化碳供给容器216，二氧化碳泵218和二氧化碳加热器220。化学剂和清洗剂供给装置212包括化学剂供给容器222，清洗剂供给装置224和第一、第二高压注入泵226、228。
二氧化碳供给容器216通过二氧化碳泵218和二氧化碳管道230连接到高压处理室12。二氧化碳管道230包括位于二氧化碳泵218和高压处理室12之间的二氧化碳加热器220。压力室加热器204连接到高压处理室12。循环泵210位于循环回路208上。循环回路208在循环入口232和循环出口234外与高压处理室12连接。化学剂供给容器222通过化学剂供给线236与循环回路208连接。清洗剂供给容器224通过清洗剂供给线238与循环回路208连接。分离容器214通过排气管道240与高压处理室12连接。液体/固体废物收集容器217与分离容器214连接。
分离容器214通过回收气体管道241与液化/净化装置219连接较佳。液化/净化装置219通过液态二氧化碳管道243与二氧化碳供给容器216连接较佳。可选择的是，偏离位置容纳液化/净化装置219，其接收的气体收集容器中排气，回收液态二氧化碳容器中的液态二氧化碳。
压力室加热器204加热高压处理室12。优选地，压力室加热器204是加热毯。可选择的是，压力室加热器可以是别的类型的加热器。
优选地，第一和第二过滤器221和223连接到循环回路208上。优选地，第一过滤器221包含精细过滤器。更好的，第一过滤器221包含能过滤0.05微米和更大颗粒的精细过滤器。优选地，第二过滤器223包含粗糙的过滤器。更好的，第二过滤器223包含能过滤2-3微米和更大颗粒的粗糙过滤器。优选地，第三过滤器225将二氧化碳供给容器216连接到二氧化碳泵218。优选地，第三个过滤器225包含精细过滤器。更好的，第三个过滤器225包含能过滤0.05微米和更大颗粒的精细过滤器。
对本领域的技术人员来说，很明显超临界处理系统200包括阀系，控制电子和实用联结器，这些都是超临界流体处理系统的典型组件。
图8显示了本发明的第一可替代高压处理室。第一可替代高压处理室12A包含可替代室外壳16A，可替代室盖18A和螺钉66。在第一可替代高压处理室中，螺钉66取代了较佳的高压处理室12中的锁定环20(图3)。
本发明的第二可替代高压处理室包含定向的较佳高压处理室12，使得较佳高压处理室12的轴是水平的。所以，在第二可替代高压处理室中，室盖18变成室门。
图9显示了本发明的第一可替代匣。第一可替代匣80包含可替代匣框架82和可替代固定棒84。在第一可替代匣中，可替代固定棒84和可替代匣框架82在第一孔86和第二孔88处连接。优选地，可替代固定棒84包含穿进第二孔88的螺纹区90。
图10显示了本发明的第二可替代匣。第二可替代匣100包含晶片支撑组件102和晶片固定组件104。晶片支撑组件102支撑晶片。晶片固定部分104包括半铰链106和凸出108。晶片支撑组件102包含铰链啮合区110和凸出啮合组件112。在操作中，晶片支撑组件102和晶片固定组件是分离的。晶片28被加载进晶片支撑组件102，从前端开口标准仓(FOUP)加载较佳。然后，晶片固定组件104的半铰链106与晶片支撑组件102的铰链啮合区110连接。最后，晶片固定组件104的凸出108迅速抓住晶片支撑组件102的凸出啮合组件112。
对本领域的技术人员来说，很明显，在不背离所附的权利要求书中给定的本发明的精神和范围，可以对较佳的实施例作许多不同的修改。

Claims (21)

1、一种用于处理多个半导体衬底的高压处理室，该处理室包含：
a.室外壳；
b.可拆卸地连接在室外壳上的第一匣，并且该匣构成为至少容纳两个半导体衬底；
c.连接在室外壳上的封闭物，封闭物被构成为在操作中将室外壳密封，从而为半导体衬底的高压处理提供封闭室。
2、根据权利要求1所述的高压处理室，其中由室外壳和门所形成的封闭室提供了超临界处理环境。
3、根据权利要求1所述的高压处理室，其中由室外壳和门所形成的封闭室提供了超临界条件下的高压处理环境。
4、根据权利要求1所述的高压处理室，其中至少一个半导体衬底包含半导体晶片，而且其中室外壳和第一匣被构成为能容纳半导体晶片。
5、根据权利要求1所述的高压处理室，其中至少一个半导体衬底包含半导体圆盘，而且其中室外壳和第一匣被构成为容纳半导体圆盘。
6、根据权利要求1所述的高压处理室，其中至少一个半导体衬底包含支撑多半导体器件的托盘，而且其中室外壳和第一匣被构成为容纳托盘。
7、根据权利要求1所述的高压处理室，其中第一匣不可以用第二匣来代替。
8、根据权利要求7所述的高压处理室，还包含机械手，这样在操作中，机械手可用来加载和卸载第一和第二匣。
9、根据权利要求1所述的高压处理室，其中第一匣还包含注入喷嘴装置。
10、根据权利要求1所述的高压处理室，其中第一匣还包含流体排泄装置。
11、根据权利要求1所述的高压处理室，还包含注入喷嘴装置和流体排泄装置。
12、根据权利要求11所述的高压处理室，其中在操作中，注入喷嘴装置和流体排泄装置在半导体衬底附近提供处理流体流。
13、根据权利要求12所述的高压处理室，其中流体流包含经过每个半导体衬底的流。
14、根据权利要求13所述的高压处理室，其中经过特定半导体衬底的流包含位于该特定半导体衬底第一边的气体注入，和位于该特定半导体衬底另一边的气体收集。
15、根据权利要求1所述的高压处理室，其中室外壳包含具有第一和第二末端的近似圆柱形长度。
16、根据权利要求15所述的高压处理室，其中室外壳在近似圆柱形长度的第一末端包含圆形屋顶表面。
17、根据权利要求15所述的高压处理室，其中封闭物密封到室外壳的圆柱形长度的第二末端。
18、根据权利要求15所述的高压处理室，其中封闭物包含圆屋顶形表面。
19、一种用于处理多半导体衬底的高压处理室，该处理室包含：
a.室外壳；
b.可拆卸地连接在室外壳上的第一匣，并且该匣构成为至少容纳两个半导体衬底；
c.连接在室外壳上的封闭物，并且构成为在操作中封闭物与室外壳密封在一起，从而为半导体衬底的高压处理提供封闭室；
d.连接到室外壳内部的注入喷嘴装置和流体排泄装置，这样在操作中，注入喷嘴装置和流体排泄装置在半导体衬底附近提供处理流体流。
20、一种用于处理多个半导体衬底的高压处理室，该处理室包含：
a.室外壳；
b.可拆卸地连接在室外壳上的第一匣，并且该匣构成为至少容纳两个半导体衬底；
c.连接在室外壳上的封闭物，并且构成为在操作中封闭物与室外壳密封在一起，从而为半导体衬底的高压处理提供封闭室；
d.与室外壳连接的机械手，其被构成以在高压处理之前，将第一匣加载进室外壳，并且构成为在高压处理后卸载第一匣。
21、一种用于处理多个半导体衬底的高压处理室，该处理室包含：
a.室外壳；
b.可拆卸地连接在室外壳上的第一匣，并且该匣构成为至少容纳两个半导体衬底；
c.连接在室外壳上的封闭物，并且构成为在操作中封闭物与室外壳密封，从而为半导体衬底的高压处理提供封闭室；
d.连接到室外壳内部的注入喷嘴装置和流体排泄装置，这样在操作中，注入喷嘴装置和流体排泄装置在半导体衬底附近提供处理流体流；
e.与室外壳连接的机械手，其被构成以在高压处理之前，将第一匣加载进室外壳，并且构成为高压处理后卸载第一匣。
CNA028196449A 2001-10-03 2002-10-03 用于多个半导体衬底的高压处理室 Pending CN1599807A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/970,309 2001-10-03
US09/970,309 US20040040660A1 (en) 2001-10-03 2001-10-03 High pressure processing chamber for multiple semiconductor substrates

Publications (1)

Publication Number Publication Date
CN1599807A true CN1599807A (zh) 2005-03-23

Family

ID=25516738

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA028196449A Pending CN1599807A (zh) 2001-10-03 2002-10-03 用于多个半导体衬底的高压处理室

Country Status (9)

Country Link
US (1) US20040040660A1 (zh)
EP (1) EP1501961A4 (zh)
JP (1) JP2005509280A (zh)
KR (1) KR20040037245A (zh)
CN (1) CN1599807A (zh)
AU (1) AU2002334841A1 (zh)
CA (1) CA2462429A1 (zh)
TW (1) TW559879B (zh)
WO (1) WO2003030219A2 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101655315B (zh) * 2008-08-22 2011-10-12 三星移动显示器株式会社 内板和具有该内板的用于沉积的坩埚组件
CN110904425A (zh) * 2018-09-17 2020-03-24 先进尼克斯有限公司 真空隔离的批处理系统

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6748960B1 (en) 1999-11-02 2004-06-15 Tokyo Electron Limited Apparatus for supercritical processing of multiple workpieces
US7730898B2 (en) * 2005-03-01 2010-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer lifter
US7767145B2 (en) 2005-03-28 2010-08-03 Toyko Electron Limited High pressure fourier transform infrared cell
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
KR100744145B1 (ko) 2006-08-07 2007-08-01 삼성전자주식회사 초임계 유체를 이용하는 웨이퍼 처리 장치 및 웨이퍼 처리방법
KR101047863B1 (ko) * 2009-03-13 2011-07-08 주식회사 에이앤디코퍼레이션 고압 처리기 및 고압 실링방법
KR101133017B1 (ko) * 2010-05-10 2012-04-09 서강대학교산학협력단 원통형 고압처리기
AP2015008457A0 (en) * 2012-11-01 2015-05-31 Spectra Systems Corp Supercritical fluid cleaning of banknotes and secure documents
US9676009B2 (en) * 2012-11-01 2017-06-13 Specrra Systems Corporation Supercritical fluid cleaning of banknotes and secure documents
WO2017062141A1 (en) * 2015-10-04 2017-04-13 Applied Materials, Inc. Substrate support and baffle apparatus
JP7336956B2 (ja) * 2019-10-10 2023-09-01 東京エレクトロン株式会社 基板処理システム、及び基板処理方法
JP7406385B2 (ja) 2020-01-31 2023-12-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理システム

Family Cites Families (109)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2625886A (en) * 1947-08-21 1953-01-20 American Brake Shoe Co Pump
US3744660A (en) * 1970-12-30 1973-07-10 Combustion Eng Shield for nuclear reactor vessel
US3968885A (en) * 1973-06-29 1976-07-13 International Business Machines Corporation Method and apparatus for handling workpieces
US4341592A (en) * 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
US4029517A (en) * 1976-03-01 1977-06-14 Autosonics Inc. Vapor degreasing system having a divider wall between upper and lower vapor zone portions
US4091643A (en) * 1976-05-14 1978-05-30 Ama Universal S.P.A. Circuit for the recovery of solvent vapor evolved in the course of a cleaning cycle in dry-cleaning machines or plants, and for the de-pressurizing of such machines
JPS5448172A (en) * 1977-09-24 1979-04-16 Tokyo Ouka Kougiyou Kk Plasma reaction processor
US4367140A (en) * 1979-11-05 1983-01-04 Sykes Ocean Water Ltd. Reverse osmosis liquid purification apparatus
US4355937A (en) * 1980-12-24 1982-10-26 International Business Machines Corporation Low shock transmissive antechamber seal mechanisms for vacuum chamber type semi-conductor wafer electron beam writing apparatus
DE3112434A1 (de) * 1981-03-28 1982-10-07 Depa GmbH, 4000 Düsseldorf Druckluftgetriebene doppelmembran-pumpe
ZA822150B (en) * 1981-04-10 1983-11-30 Prestige Group Plc Pressure cookers
US4682937A (en) * 1981-11-12 1987-07-28 The Coca-Cola Company Double-acting diaphragm pump and reversing mechanism therefor
DE3145815C2 (de) * 1981-11-19 1984-08-09 AGA Gas GmbH, 2102 Hamburg Verfahren zum Entfernen von ablösungsfähigen Materialschichten von beschichteten Gegenständen,
US4522788A (en) * 1982-03-05 1985-06-11 Leco Corporation Proximate analyzer
US4426358A (en) * 1982-04-28 1984-01-17 Johansson Arne I Fail-safe device for a lid of a pressure vessel
DE3238768A1 (de) * 1982-10-20 1984-04-26 Kurt Wolf & Co Kg, 7547 Wildbad Kochgefaess aus kochtopf und deckel, insbesondere dampfdruckkochtopf
FR2536433A1 (fr) * 1982-11-19 1984-05-25 Privat Michel Procede et installation de nettoyage et decontamination particulaire de vetements, notamment de vetements contamines par des particules radioactives
US4865061A (en) * 1983-07-22 1989-09-12 Quadrex Hps, Inc. Decontamination apparatus for chemically and/or radioactively contaminated tools and equipment
US4549467A (en) * 1983-08-03 1985-10-29 Wilden Pump & Engineering Co. Actuator valve
GB8332394D0 (en) * 1983-12-05 1984-01-11 Pilkington Brothers Plc Coating apparatus
US4778356A (en) * 1985-06-11 1988-10-18 Hicks Cecil T Diaphragm pump
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US5044871A (en) * 1985-10-24 1991-09-03 Texas Instruments Incorporated Integrated circuit processing system
US4827867A (en) * 1985-11-28 1989-05-09 Daikin Industries, Ltd. Resist developing apparatus
US4670126A (en) * 1986-04-28 1987-06-02 Varian Associates, Inc. Sputter module for modular wafer processing system
US4917556A (en) * 1986-04-28 1990-04-17 Varian Associates, Inc. Modular wafer transport and processing system
US5882165A (en) * 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
JPS63157870A (ja) * 1986-12-19 1988-06-30 Anelva Corp 基板処理装置
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US4924892A (en) * 1987-07-28 1990-05-15 Mazda Motor Corporation Painting truck washing system
DE3725565A1 (de) * 1987-08-01 1989-02-16 Peter Weil Verfahren und anlage zum entlacken von gegenstaenden mit einem tauchbehaelter mit loesungsmittel
US5105556A (en) * 1987-08-12 1992-04-21 Hitachi, Ltd. Vapor washing process and apparatus
US4838476A (en) * 1987-11-12 1989-06-13 Fluocon Technologies Inc. Vapour phase treatment process and apparatus
JP2663483B2 (ja) * 1988-02-29 1997-10-15 勝 西川 レジストパターン形成方法
US4823976A (en) * 1988-05-04 1989-04-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Quick actuating closure
US5185296A (en) * 1988-07-26 1993-02-09 Matsushita Electric Industrial Co., Ltd. Method for forming a dielectric thin film or its pattern of high accuracy on a substrate
US5013366A (en) * 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
US5051135A (en) * 1989-01-30 1991-09-24 Kabushiki Kaisha Tiyoda Seisakusho Cleaning method using a solvent while preventing discharge of solvent vapors to the environment
WO1990009233A1 (en) * 1989-02-16 1990-08-23 Pawliszyn Janusz B Apparatus and method for delivering supercritical fluid
US5288333A (en) * 1989-05-06 1994-02-22 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method and apparatus therefore
US5186718A (en) * 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US4923828A (en) * 1989-07-07 1990-05-08 Eastman Kodak Company Gaseous cleaning method for silicon devices
JPH077756B2 (ja) * 1989-07-26 1995-01-30 株式会社日立製作所 超臨界ガス装置からの試料取り出し方法
DE3926577A1 (de) * 1989-08-11 1991-02-14 Leybold Ag Vakuumpumpe mit einem rotor und mit unter vakuum betriebenen rotorlagerungen
US4983223A (en) * 1989-10-24 1991-01-08 Chenpatents Apparatus and method for reducing solvent vapor losses
US5213619A (en) * 1989-11-30 1993-05-25 Jackson David P Processes for cleaning, sterilizing, and implanting materials using high energy dense fluids
US5370741A (en) * 1990-05-15 1994-12-06 Semitool, Inc. Dynamic semiconductor wafer processing using homogeneous chemical vapors
DE4018464A1 (de) * 1990-06-08 1991-12-12 Ott Kg Lewa Membran fuer eine hydraulisch angetriebene membranpumpe
US5143103A (en) * 1991-01-04 1992-09-01 International Business Machines Corporation Apparatus for cleaning and drying workpieces
CH684402A5 (de) * 1991-03-04 1994-09-15 Xorella Ag Wettingen Vorrichtung zum Verschieben und Schwenken eines Behälter-Verschlusses.
JP3040212B2 (ja) * 1991-09-05 2000-05-15 株式会社東芝 気相成長装置
US5190373A (en) * 1991-12-24 1993-03-02 Union Carbide Chemicals & Plastics Technology Corporation Method, apparatus, and article for forming a heated, pressurized mixture of fluids
JP2889784B2 (ja) * 1993-03-04 1999-05-10 東京エレクトロン株式会社 回転処理装置
US5404894A (en) * 1992-05-20 1995-04-11 Tokyo Electron Kabushiki Kaisha Conveyor apparatus
TW263629B (zh) * 1992-05-27 1995-11-21 Nihon Densan Kk
US5313965A (en) * 1992-06-01 1994-05-24 Hughes Aircraft Company Continuous operation supercritical fluid treatment process and system
US5401322A (en) * 1992-06-30 1995-03-28 Southwest Research Institute Apparatus and method for cleaning articles utilizing supercritical and near supercritical fluids
US5316591A (en) * 1992-08-10 1994-05-31 Hughes Aircraft Company Cleaning by cavitation in liquefied gas
US5339844A (en) * 1992-08-10 1994-08-23 Hughes Aircraft Company Low cost equipment for cleaning using liquefiable gases
US5337446A (en) * 1992-10-27 1994-08-16 Autoclave Engineers, Inc. Apparatus for applying ultrasonic energy in precision cleaning
US5355901A (en) * 1992-10-27 1994-10-18 Autoclave Engineers, Ltd. Apparatus for supercritical cleaning
US5447294A (en) * 1993-01-21 1995-09-05 Tokyo Electron Limited Vertical type heat treatment system
US5377705A (en) * 1993-09-16 1995-01-03 Autoclave Engineers, Inc. Precision cleaning system
JP3204284B2 (ja) * 1993-11-13 2001-09-04 株式会社カイジョー 遠心乾燥装置
US5417768A (en) * 1993-12-14 1995-05-23 Autoclave Engineers, Inc. Method of cleaning workpiece with solvent and then with liquid carbon dioxide
DE69523208T2 (de) * 1994-04-08 2002-06-27 Texas Instruments Inc Verfahren zur Reinigung von Halbleiterscheiben mittels verflüssigter Gase
JPH07310192A (ja) * 1994-05-12 1995-11-28 Tokyo Electron Ltd 洗浄処理装置
JPH08306632A (ja) * 1995-04-27 1996-11-22 Shin Etsu Handotai Co Ltd 気相エピタキシャル成長装置
JPH08330266A (ja) * 1995-05-31 1996-12-13 Texas Instr Inc <Ti> 半導体装置等の表面を浄化し、処理する方法
JP3415373B2 (ja) * 1995-11-29 2003-06-09 東芝マイクロエレクトロニクス株式会社 半導体基板等の表層の溶解方法及び装置
EP0884769A1 (en) * 1996-02-29 1998-12-16 Tokyo Electron Limited Heat-treating boat for semiconductor wafer
JP3346698B2 (ja) * 1996-03-18 2002-11-18 株式会社荏原製作所 高温用モータポンプとその運転方法
JP3176294B2 (ja) * 1996-08-26 2001-06-11 日本電気株式会社 半導体ウェーハ用キャリア
US5881577A (en) * 1996-09-09 1999-03-16 Air Liquide America Corporation Pressure-swing absorption based cleaning methods and systems
US6413355B1 (en) * 1996-09-27 2002-07-02 Tokyo Electron Limited Apparatus for and method of cleaning objects to be processed
US5908510A (en) * 1996-10-16 1999-06-01 International Business Machines Corporation Residue removal by supercritical fluids
US5928389A (en) * 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
JPH10131889A (ja) * 1996-10-25 1998-05-19 Mitsubishi Heavy Ind Ltd 冷凍機用圧縮機
US5888050A (en) * 1996-10-30 1999-03-30 Supercritical Fluid Technologies, Inc. Precision high pressure control assembly
JP3437734B2 (ja) * 1997-02-26 2003-08-18 富士通株式会社 製造装置
US5879459A (en) * 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
JPH10261687A (ja) * 1997-03-18 1998-09-29 Furontetsuku:Kk 半導体等製造装置
US6306564B1 (en) * 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6284360B1 (en) * 1997-09-30 2001-09-04 3M Innovative Properties Company Sealant composition, article including same, and method of using same
US6235634B1 (en) * 1997-10-08 2001-05-22 Applied Komatsu Technology, Inc. Modular substrate processing system
US6103638A (en) * 1997-11-07 2000-08-15 Micron Technology, Inc. Formation of planar dielectric layers using liquid interfaces
KR100524204B1 (ko) * 1998-01-07 2006-01-27 동경 엘렉트론 주식회사 가스 처리장치
US6048494A (en) * 1998-01-30 2000-04-11 Vlsi Technology, Inc. Autoclave with improved heating and access
JPH11216437A (ja) * 1998-01-30 1999-08-10 Sharp Corp 超臨界流体洗浄方法及び超臨界流体洗浄装置
US6067728A (en) * 1998-02-13 2000-05-30 G.T. Equipment Technologies, Inc. Supercritical phase wafer drying/cleaning system
US6244121B1 (en) * 1998-03-06 2001-06-12 Applied Materials, Inc. Sensor device for non-intrusive diagnosis of a semiconductor processing system
JPH11274132A (ja) * 1998-03-20 1999-10-08 Plasma System Corp 基板の洗浄方法及び洗浄装置
US6242165B1 (en) * 1998-08-28 2001-06-05 Micron Technology, Inc. Supercritical compositions for removal of organic material and methods of using same
US6642140B1 (en) * 1998-09-03 2003-11-04 Micron Technology, Inc. System for filling openings in semiconductor products
US6110232A (en) * 1998-10-01 2000-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method for preventing corrosion in load-lock chambers
JP2000114218A (ja) * 1998-10-09 2000-04-21 Sony Corp ウエハ洗浄装置及びウエハ洗浄方法
JP2000265945A (ja) * 1998-11-10 2000-09-26 Uct Kk 薬液供給ポンプ、薬液供給装置、薬液供給システム、基板洗浄装置、薬液供給方法、及び基板洗浄方法
KR100304254B1 (ko) * 1998-12-08 2002-03-21 윤종용 모듈외관검사설비
US6508259B1 (en) * 1999-08-05 2003-01-21 S.C. Fluids, Inc. Inverted pressure vessel with horizontal through loading
US6334266B1 (en) * 1999-09-20 2002-01-01 S.C. Fluids, Inc. Supercritical fluid drying system and method of use
US6602349B2 (en) * 1999-08-05 2003-08-05 S.C. Fluids, Inc. Supercritical fluid cleaning process for precision surfaces
JP4350843B2 (ja) * 1999-08-20 2009-10-21 株式会社神戸製鋼所 超臨界乾燥装置
TW510807B (en) * 1999-08-31 2002-11-21 Kobe Steel Ltd Pressure processing device
JP2001144086A (ja) * 1999-08-31 2001-05-25 Sony Corp 埋め込み配線の形成方法、及び、基体処理装置
JP2001077074A (ja) * 1999-08-31 2001-03-23 Kobe Steel Ltd 半導体ウエハ等の洗浄装置
US6228563B1 (en) * 1999-09-17 2001-05-08 Gasonics International Corporation Method and apparatus for removing post-etch residues and other adherent matrices
US6264003B1 (en) * 1999-09-30 2001-07-24 Reliance Electric Technologies, Llc Bearing system including lubricant circulation and cooling apparatus
US6558475B1 (en) * 2000-04-10 2003-05-06 International Business Machines Corporation Process for cleaning a workpiece using supercritical carbon dioxide
US6915804B2 (en) * 2002-12-03 2005-07-12 University Of Florida Tracheotomy surgical device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101655315B (zh) * 2008-08-22 2011-10-12 三星移动显示器株式会社 内板和具有该内板的用于沉积的坩埚组件
US8137470B2 (en) 2008-08-22 2012-03-20 Samsung Mobile Display Co., Ltd. Inner plate and crucible assembly for deposition having the same
CN110904425A (zh) * 2018-09-17 2020-03-24 先进尼克斯有限公司 真空隔离的批处理系统
CN114277353A (zh) * 2018-09-17 2022-04-05 先进尼克斯有限公司 真空隔离的批处理系统

Also Published As

Publication number Publication date
WO2003030219A3 (en) 2004-11-18
TW559879B (en) 2003-11-01
CA2462429A1 (en) 2003-04-10
AU2002334841A1 (en) 2003-04-14
KR20040037245A (ko) 2004-05-04
JP2005509280A (ja) 2005-04-07
EP1501961A4 (en) 2005-09-28
US20040040660A1 (en) 2004-03-04
EP1501961A2 (en) 2005-02-02
WO2003030219A2 (en) 2003-04-10

Similar Documents

Publication Publication Date Title
CN1599807A (zh) 用于多个半导体衬底的高压处理室
US6921456B2 (en) High pressure processing chamber for semiconductor substrate
US6757989B2 (en) Wafer drying apparatus
KR100900594B1 (ko) 기판 처리 시스템, 기판 처리 방법 및 기억 매체
KR20220006385A (ko) 기판 처리 장치 및 방법
KR102219883B1 (ko) 기판 처리 방법
US6784106B2 (en) Wafer drying method
CA2444296A1 (en) High pressure processing chamber for semiconductor substrate including flow enhancing features
JP5641374B2 (ja) 基板処理装置
KR101512097B1 (ko) 기판 처리 장치 및 기판 처리 방법
CN112687592B (zh) 半导体器件解理装置及解理方法
KR102480392B1 (ko) 기판 처리 장치 및 방법
JP2004014604A (ja) 基板処理装置及び基板処理方法
JP2000077498A (ja) 基板把持装置洗浄装置
KR100489638B1 (ko) 반도체장치제조설비의건식식각설비
KR20210021191A (ko) 기판 처리 방법 및 장치
KR102211779B1 (ko) 기판 처리 방법
KR20220097612A (ko) 기판 처리 장치 및 방법
KR20210072177A (ko) 기판 처리 장치 및 방법
CN117253817A (zh) 用于处理基板的方法和装置
CN115966487A (zh) 用于处理基板的设备和用于测量浓度的设备
KR20220006691A (ko) 기판 처리 장치 및 기판 처리 방법
KR20220072910A (ko) 기판 처리 장치 및 지지 유닛의 결합 방법
CN116344390A (zh) 用于处理基板的装置和用于处理基板的方法
KR20210050628A (ko) 기판 처리 장치

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication