CN110904425A - 真空隔离的批处理系统 - Google Patents

真空隔离的批处理系统 Download PDF

Info

Publication number
CN110904425A
CN110904425A CN201910867052.1A CN201910867052A CN110904425A CN 110904425 A CN110904425 A CN 110904425A CN 201910867052 A CN201910867052 A CN 201910867052A CN 110904425 A CN110904425 A CN 110904425A
Authority
CN
China
Prior art keywords
vacuum chamber
vacuum
port
vapor deposition
deposition system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910867052.1A
Other languages
English (en)
Other versions
CN110904425B (zh
Inventor
阿瑟·凯格勒
凯文·巴贝拉
丹尼尔·古德曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASMPT Nexx Inc
Original Assignee
Tel Nexx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tel Nexx Inc filed Critical Tel Nexx Inc
Priority to CN202111144244.3A priority Critical patent/CN114277353B/zh
Publication of CN110904425A publication Critical patent/CN110904425A/zh
Application granted granted Critical
Publication of CN110904425B publication Critical patent/CN110904425B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一种气相淀积系统包括一个真空腔室以及被配置成处理半导体衬底的两个或更多个处理模块。每个处理模块可移除地连接至所述真空腔室的相应端口，使得当连接到所述相应端口时，每个处理模块与所述真空腔室真空连通。端口密封机构，该端口密封机构被配置成在每个端口处形成真空密封，使得当第一端口被密封且第一处理模块与该第一端口断开连接时，在所述第一处理模块通向大气压力的同时在所述真空腔室内保持真空状态。

Description

真空隔离的批处理系统
技术领域
本发明涉及半导体器件制造方法和系统。
背景技术
通过物理气相沉积（PVD）的溅射在半导体行业中广泛用于在半导体晶片上沉积薄金属膜。这些膜通常由Ti、Cu、Al、Au、Ta等组成。在准备薄膜沉积时，通常要进行溅射蚀刻清洁。在清洁表面之后，可以使用若干类型的气相沉积技术之一。在薄膜沉积之后，可以继续进行其他制造和/或封装步骤。
在半导体衬底上沉积金属薄膜的常用方法是使用多个单晶片处理腔室，其中每个腔室一次只能沉积一种材料。然而，将单独的单晶片处理腔室专用于单个工艺增加了这种系统的成本并且还需要中间机器人晶片处理，限制了系统吞吐量。
批处理系统的优点是可以在单个大真空腔室中同时处理若干晶片。单腔室批处理系统的尺寸通常被设定成每个腔室容纳约3至6个晶片。然后使用PVD技术同时涂覆所有晶片。这种批处理系统的一个限制是，公共真空腔室内的多个处理位置无法相互真空隔离。这意味着维修包含相应处理位置的一个处理模块需要给所有处理模块通气。
通常，在恢复生产之前，给处理腔室通气需要重新验证，降低了系统可用性。对于一些处理腔室，给腔室通气会产生额外的维修。例如，如果给腔室通气，通常必须清洁使用TiW作为靶材的PVD腔室的屏蔽件，以防止产生颗粒。
其他批处理系统可以提供各个处理模块的真空隔离。然而，这种单独的真空隔离需要昂贵的泵送装置。
发明内容
如本发明所述，理想的解决方案提供了批处理系统的吞吐量，所述批处理系统具有单独真空隔离系统的优点，而且针对每个单独腔室并没有复杂且昂贵的真空设备。本发明中的技术提供了批处理系统，所述批处理系统针对多个处理腔室的处理使用公共真空腔室泵送，而不是每个腔室都有自己的真空泵送系统。因此，单个真空泵或真空泵装置可以用于批处理系统。可以通气维修一些处理模块，同时保持其他处理模块处于真空状态。此外，在同时拆卸一个或多个处理模块进行维修时，可以在系统内在真空状态下继续对半导体衬底进行气相沉积处理。
一个实施例包括具有若干部件的气相淀积系统。真空腔室被配置成保持气体压力小于大气压力。真空腔室的尺寸被设定成允许在真空腔室内运送两个或更多个半导体衬底。两个或更多个处理模块各自被配置成处理半导体衬底。每个处理模块可移除地连接至真空腔室的相应端口，使得当连接到相应端口时，每个处理模块与真空腔室真空连通。当连接到相应端口时，每个处理模块被配置成保持气体压力小于大气压力。端口密封机构被配置成在每个端口处形成真空密封，使得当第一端口被密封并且对应于第一端口的第一处理模块与第一端口断开连接时，在第一处理模块通向大气压力的同时在真空腔室内保持真空状态。
另一个实施例包括具有若干部件的气相淀积系统。这些部件包括具有多个处理模块的主真空腔室以及能够在所述主真空腔室内移动的阀板。其他部件包括用于将阀板从备用位置移动到密封位置的载体，所述备用位置允许在处理模块中对多晶片进行处理，所述密封位置将处理模块与主真空腔室隔离。沉积系统还包括锁环，所述锁环用于将阀板O形环压紧到处理模块的密封表面上，提供足够的O形环压紧以保持阀板上方的大气状态和阀板下方的高真空状态。
当然，为清晰起见，已经阐述了本发明中描述的不同步骤的讨论顺序。通常，可以以任何适当顺序执行这些步骤。此外，尽管本发明中的每个不同特征、技术、配置等可以在本公开的不同位置讨论，但意图是每种构思可以彼此独立地执行或者彼此组合执行。因此，可以以许多不同方式来实施和看待本发明。
应注意的是，此发明内容部分未指定本公开或要求保护的发明的每个实施例和/或递增的新颖方面。此发明内容相对于常规技术仅提供了对不同实施例和新颖性的对应点的初步讨论。对于本发明和实施例的其他细节和/或可能视角，读者可以参阅本发明的具体实施方式部分和对应的附图（如下文进一步讨论的）。
附图说明
当结合附图参考详细说明时，可以更好地理解本发明。
图1示意性地示出了PVD系统的俯视图。
图2A和2B示意性地示出了批处理腔室的透视图，其中一些部件在图2B中是透明的。
图3示意性地示出了操作期间的处理模块的放大截面透视图。
图4A示意性示出了处于维修模式的图3的处理模块的放大截面透视图，其中为了清楚起见，省略了真空腔室。
图4B与图4A类似，但包括真空腔室。
图5A示意性示出了多模块腔室的放大截面透视图。
图5B示意性地示出了操作期间的图2A和图2B的批处理腔室的透视图。
图6A示意性示出了多模块腔室的放大截面透视图。
图6B示意性示出了多模块腔室内的对准构件的放大透视图。
图7A示意性示出了多模块腔室的放大截面透视图。
图7B示意性示出了多模块腔室内的对准构件的放大透视图。
图8示意性示出了多模块腔室的放大截面透视图。
图9A示意性示出了处理模块的放大截面透视图。
图9B示意性示出了图9A的处理模块的截面图。
图10A示意性示出了沉积阀板的部分透视图。
图10B示意性示出了图10A的沉积阀板的放大仰视透视图。
图11A示意性地示出了锁环。
图11B示意性示出了图11A的锁环的透视图。
图12A示意性地示出了图11A的旋转后的锁环。
图12B示意性地示出了图12A的锁环的截面图。
图13A示意性地示出了图12A的进一步旋转后的锁环。
图13B示意性地示出了图13A的锁环的截面图。
图14示意性地示出了处于打开位置的处理模块的透视图。
具体实施方式
现在将更详细地描述示例气相沉积系统。图1示出了PVD系统200。所述PVD系统200包括具有一个传送位置的批处理腔室220和五个处理模块。系统200被配置成通过将所有晶片同时从一个位置移动到下一个位置来同时处理五个衬底。应注意的是，其他系统可以有更多或更少的位置。五个处理位置在两个蚀刻处理模块230a和230b以及三个沉积处理模块240a、240b和240c内居中。应注意的是，图1中所示的部件201、202、203、204、205、206、207和208在本领域中以各种形式已知，因此对本领域技术人员而言是显而易见的，而图1中所示的部件209、211、220、230和240与本发明相关联。此外，虽然从以下描述中显而易见的是，本设备的各个部件在操作中是可移动的且能被驱动，但是为了清楚起见，省略了用于实现这种驱动的装置。为避免疑虑，这些部件的致动可以以多种方式实现，例如通过连接合适的电操作电动机或致动器，所述电动机或致动器由操作者或更常见地由控制装置（未示出）（如合适的编程计算机或处理器）控制。
如本领域中众所周知的，在操作期间，前开式晶圆传送盒（FOUP）201内的衬底210由前端203处的机器人204运送到批量排气模块202。衬底210可以由半导体材料组成或可以为复合晶片，如用于扇出晶圆级封装。衬底可以是圆形或者矩形。在排气处理之后，机器人204将衬底210运送到负载锁定部205进行抽空降压。在抽空降压之后，如本领域中众所周知的，真空机器人207将衬底210传送到真空传送模块206中的冷却卡盘208。一旦冷却，机器人207就通过闸阀209移动衬底210并将衬底放置在载体211上。载体圆盘225（参见例如图2B）顺时针旋转，从而将载体211和衬底放入处理模块230a中进行溅射蚀刻预清洁。在处理模块230a中处理衬底210的同时，将其他衬底210放置在附接至载体圆盘225的下一个载体211上。
相应载体211上有衬底210等的载体圆盘225继续旋转穿过其他处理模块，从而按顺序执行每个工序。处理模块可以包括第二溅射蚀刻预清洁模块230b、第一PVD溅射沉积模块240a、第二PVD溅射沉积模块240b和第三PVD溅射沉积模块240c。各个沉积模块可以用于沉积相同或不同金属。如所能理解的，可以使用各个沉积组合。载体211再次旋转直到衬底位于闸阀209处的传送位置。机器人207将衬底210传送至负载锁定部205。在通气后，机器人204将经处理的衬底返回FOUP 201。
图2A展示了批处理腔室220的细节。这些细节包括一个主真空腔室212以及围绕主真空腔室212排列的处理模块230a、230b、240a、240b和240c。图2B示出了批处理腔室220，其中主真空腔室212被隐藏以便显示内部细节。具有用于传送衬底210的多个位置的传送圆盘或多模块载体225能够在主真空腔室212内旋转。示出了位于备用位置且由备用支撑连杆227夹持的阀板226。晶片或衬底210在无处理腔室的位置通过真空腔室212的侧面上的狭槽213插入该腔室212中。此动作借助于真空机器人207实现并且主真空腔室212的此侧面附接到真空传送模块206。
图3示出了操作期间的处理模块230，其中处理卡盘229在处理期间支撑衬底210。对多模块载体225进行旋转定位，使得处理卡盘229可以通过多模块载体225的开口竖直移动。使用备用连杆227将阀板226定位在升降基座239和多模块载体225竖直上方的平面中。连杆227中的对准构件237确保阀板226相对于基座239居中。锁环228位于阀板226与处理模块230的底座231之间的垂直平面中。
图4A示出了处于维修模式的处理模块230，在维修模式，可以接近处理模块230。如所示出的，模块230枢转打开约180度，从而可以接近处理模块230的底座231和内表面。枢轴线被设置成大致与真空腔室212的圆形边缘相切。这种接近允许预防性维修操作，如更换可能在处理期间积聚碎屑的各种屏蔽元件。图4B示出了阀板226，阀板226抵靠在主真空腔室212的通常为圆形的内密封表面232上而保持就位，压紧位于密封表面232附近的O形环233以提供密封，使得主腔室212可以在维修操作期间保持高真空状态。
现在将描述阀板示例操作。为了启动阀板226，从图3所示的正常操作模式移动到图4A及图4B中的维修模式，可以执行几个步骤。在图5A和5B中，使用多模块载体225的旋转运动从多模块腔室212移除衬底210。多模块载体225然后旋转直到开口直接位于阀板升降基座239上方和处于备用位置的阀板226下方。
在待维修的模块中的每个模块中，阀板升降基座239向上移动，将阀板226从支撑连杆227上抬起并使对准构件237对中。这在图6A和6B中示出了。
驱动支撑连杆227摆离阀板226。阀板226现在支撑在升降基座239上，如图7A和7B所示。
现在参照图8，阀板基座239向下移动，从而将阀板226放在在多模块载体225上。基座239继续向下移动到载体225下方，使得载体225可自由旋转。
如图9A和图9B中所示出的，包含一个或多个阀板226的多模块载体圆盘225旋转，将每个阀板226定位在其相应处理模块230的下方。
如图10A和图10B所示出的，处理卡盘229向上移动，带动阀板226与密封表面232接触。阀板226具有外围间隙243，这些外围间隙允许阀板移动经过设置在锁环228中的辊244（参见图11A及图11B），该锁环用作滚子轴承。虽然示出的是使用滚子轴承，但本领域的技术人员将理解的是，其他轴承（例如滑动轴承或滚珠轴承）也可以用于或替代地用于在阀板226与锁环228之间提供低摩擦引导运动。阀板226还具有螺旋倾斜表面242，螺旋倾斜表面242被配置成将方位运动转换成杠杆轴向力，足以压紧O形环233并抵抗大气力，该大气力在将处理模块230通气到大气压力时抵抗轴向力。
图11A和11B展示了使用倾斜表面242旋转至接合辊244的锁环228。
当辊244沿着阀板倾斜表面242行进时，锁环228继续旋转，从而竖直移动阀板226以压紧O形环233抵靠在密封表面232上。围绕锁环228的周边的锁环支撑件246上的滚珠轴承座圈245支撑该运动的垂直和径向负荷。图12A和12B中展示了示例结果。
现在参照图13A和13B，锁环228可以旋转到最终位置，充分压紧O形环233并且移出阀板倾斜表面242，避免大气压力促使锁环228向后旋转。
一个或多个处理模块230可以通气到大气压力并且枢转打开到维修位置。图14展示了枢转到打开位置的所有处理模块230。
因此，单泵装置可以用于在真空腔室和处理模块中形成真空条件，同时实现对每个处理模块的独立维修接触。应注意的是，本发明中的真空或真空条件不限于绝对真空，但是预期压力小于大气压力。
一个实施例包括具有若干部件的气相淀积系统。真空腔室被配置成保持气体压力小于大气压力。真空腔室的尺寸被设定成允许在真空腔室内运送两个或更多个半导体衬底。这可以包括分开传送，因为衬底被传送至不同处理工位。两个或更多个处理模块被配置成处理半导体衬底。每个处理模块可移除地连接至真空腔室的相应端口（开口），使得当连接到相应端口时，每个处理模块与真空腔室真空连通。当连接到相应端口时，每个处理模块被配置成保持气体压力低于大气压力。换句话说，处理模块可以连接到真空腔室，形成真空密封，从而可以通过真空腔室和连接的处理模块保持真空。
真空腔室包含端口密封机构，所述端口密封机构被配置成在每个端口处形成真空密封，使得当第一端口被密封并且对应于第一端口的第一处理模块与第一端口断开连接时，在第一处理模块通向大气压力的同时在真空腔室内保持真空状态。换句话说，处理模块连接的真空腔室中的开口可以被关闭或密封以分离各个处理模块，同时仍然保持真空腔室和其他连接的处理模块内的真空状态。相应地，位于真空腔室或其他连接的处理模块内的衬底保持在真空状态。
在其他实施例中，系统包括至少两个溅射蚀刻清洁处理模块和至少两个气相沉积处理模块。因此，如果需要接近给定处理模块以进行维修，则可以使用剩余连接的处理模块继续对晶片进行处理。处理模块可以枢转地连接至真空腔室或气相淀积系统并且可以枢转或旋转远离真空腔室以便接近屏蔽件，从而更换或清洁表面。在此清洁期间，可以使用仍然附接到真空腔室的剩余处理模块继续进行晶片处理。此外，在维修未附接的处理模块的同时，每个附接的处理模块可以处理晶片。因此，在一个或多个处理模块接收维修时，可以继续进行晶片处理操作。这减少了对吞吐量的任何影响，与此同时，为系统提供了更少的真空泵或单个真空泵。
如上所述，衬底载体可以用于在真空腔室内运送半导体衬底。该真空腔室可以是具有如所述的圆形通道的环形形状、或可以是线性形状、矩形形状等。
阀板可以用于密封真空腔室的端口（开口）。可以实施其他密封件。可以使用阀板实施锁环来将阀板牢固地附接到端口，以保持真空腔室内的真空状态。
在前面的描述中已经阐述了具体细节，如处理系统的特定几何结构以及对其内使用的各种部件和工艺的描述。然而，应当理解的是，本发明中的技术可以在脱离这些具体细节的其他实施例中实施，并且这些细节是出于解释而非限制的目的。已经参照附图对本文中公开的实施例进行了描述。同样地，出于解释的目的，给出了具体数字、材料和构型以便提供透彻理解。尽管如此，也可以在没有这些具体细节的情况下实践实施例。用相同的附图标记表示具有基本相同功能结构的部件，因此可以省略任何多余的描述。
已经将各个技术描述为多个离散操作以帮助理解各个实施例。描述顺序不应被解释为暗示这些操作必须依赖于顺序。事实上，这些操作不必按呈现顺序进行。可以按与所描述的实施例不同的顺序来执行所描述的操作。可以执行各种附加的操作和/或可以在附加实施例中省略所描述的操作。
本发明中所使用的“衬底”或“目标衬底”一般是指根据本发明处理的对象。衬底可以包括器件的任何材料部分或结构，特别是半导体或其他电子器件，并且可以是例如基础衬底结构（如半导体晶片、掩模版或在基础衬底结构上或覆盖基础衬底结构的层（如薄膜）。因此，衬底不限于任何特定的图案化或未图案化的基础结构、底层或覆盖层、而是预期包括任何这样的层和/或基础结构、及其任何组合。该描述可以参考特定类型的衬底，但这仅出于说明的目的。
本领域技术人员还将理解的是，在仍实现本发明的相同目的的情况下，可以对上述技术的操作进行许多变更。这些变更皆包含在本公开的范围内。因此，本发明的实施例的前述描述不旨在是限制性的。更确切地说，在以下权利要求书中阐述了对本发明的实施例的任何限制。

Claims (14)

1.一种气相淀积系统，包括：
真空腔室，所述真空腔室被配置成保持气体压力小于大气压力，所述真空腔室的尺寸被设定成允许在所述真空腔室内运送两个或更多个半导体衬底；
两个或更多个处理模块，所述两个或更多个处理模块各自被配置成处理半导体衬底，每个处理模块可移除地连接至所述真空腔室的相应端口，使得当连接到所述相应端口时，每个处理模块与所述真空腔室真空连通，当连接到所述相应端口时，每个处理模块被配置成保持所述气体压力小于所述大气压力；以及
端口密封机构，所述端口密封机构被配置成在每个端口处形成真空密封，使得当第一端口被密封并且对应于所述第一端口的第一处理模块与所述第一端口断开连接时，在所述第一处理模块通向大气压力的同时在所述真空腔室内保持真空状态。
2.根据权利要求1所述的气相沉积系统，其中当所述第一端口被密封并且所述第一处理模块断开连接时，位于所述真空腔室内的半导体衬底保持在所述真空状态。
3.根据权利要求1所述的气相沉积系统，其中当所述第一端口被密封并且所述第一处理模块断开连接时，位于与第二端口连接的第二处理模块内的给定半导体衬底保持在所述真空状态。
4.根据权利要求1所述的气相沉积系统，其中所述两个或更多个处理模块中的至少一个处理模块被配置成当所述半导体衬底位于其内时对所述半导体衬底进行溅射刻蚀，并且其中所述两个或更多个处理模块中的至少一个处理模块被配置成当所述半导体衬底位于其内时在所述半导体衬底上气相沉积薄膜。
5.根据权利要求1所述的气相沉积系统，其中每个处理模块枢转地附接至所述真空腔室，并且能够通过使每个处理模块枢转远离所述真空腔室的所述相应端口而从所述相应端口移除。
6.根据权利要求1所述的气相沉积系统，其中所述气相沉积系统被配置成使用所述两个或更多个处理模块同时处理多个半导体晶片。
7.根据权利要求1所述的气相沉积系统，进一步包括衬底载体，所述衬底载体在所述真空腔室内运送半导体衬底。
8.根据权利要求7所述的气相沉积系统，其中所述衬底载体具有圆形通道，所述圆形通道被配置成通过在所述两个或更多个处理模块之间转动来运送所述半导体衬底。
9.根据权利要求1所述的气相沉积系统，其中所述端口密封机构包括阀板，所述阀板覆盖所述相应的端口以形成所述真空密封。
10.根据权利要求9所述的气相沉积系统，进一步包括锁环，所述锁环被定位在所述相应端口处并且被配置成保持所述阀板密封所述相应端口。
11.根据权利要求9所述的气相沉积系统，进一步包括升降机构，所述升降机构被配置成选择性地将所述阀板提升到所述第一端口或将所述半导体衬底提升到所述第一处理模块中。
12.根据权利要求1所述的气相沉积系统，其中所述两个或更多个处理模块包括至少四个处理模块，其中所述至少四个处理模块中的至少两个处理模块被配置成当所述半导体衬底位于其内时对所述半导体衬底进行溅射刻蚀，并且其中所述至少四个处理模块中的至少两个处理模块被配置成当所述半导体衬底位于其内时在所述半导体衬底上气相沉积薄膜。
13.根据权利要求1所述的气相沉积系统，其中单个真空泵为所述真空腔室以及所述两个或更多个处理模块创建所述真空条件。
14.一种气相淀积系统，包括：
真空腔室；
与所述真空腔室真空连通的两个或更多个处理模块；
设置在所述真空腔室内的阀板；
阀座，所述阀座被配置成将所述阀板运送到至少一个处理模块的密封表面；以及
锁环，所述锁环被配置成：当所述至少一个处理模块从与所述真空腔室的真空连通移除并进入大气压力时，使用足够的力将所述阀板固定抵靠在至少一个处理模块的所述密封表面上来保持所述真空腔室中的真空压力。
CN201910867052.1A 2018-09-17 2019-09-12 真空隔离的批处理系统 Active CN110904425B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111144244.3A CN114277353B (zh) 2018-09-17 2019-09-12 真空隔离的批处理系统

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862732205P 2018-09-17 2018-09-17
US62/732,205 2018-09-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202111144244.3A Division CN114277353B (zh) 2018-09-17 2019-09-12 真空隔离的批处理系统

Publications (2)

Publication Number Publication Date
CN110904425A true CN110904425A (zh) 2020-03-24
CN110904425B CN110904425B (zh) 2021-11-16

Family

ID=69773804

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202111144244.3A Active CN114277353B (zh) 2018-09-17 2019-09-12 真空隔离的批处理系统
CN201910867052.1A Active CN110904425B (zh) 2018-09-17 2019-09-12 真空隔离的批处理系统

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN202111144244.3A Active CN114277353B (zh) 2018-09-17 2019-09-12 真空隔离的批处理系统

Country Status (4)

Country Link
US (1) US11174544B2 (zh)
KR (1) KR102335300B1 (zh)
CN (2) CN114277353B (zh)
TW (1) TWI730406B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115142031A (zh) * 2021-03-31 2022-10-04 芝浦机械电子装置株式会社 成膜装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220044122A (ko) * 2020-09-30 2022-04-06 시바우라 메카트로닉스 가부시끼가이샤 성막 장치
KR20230092828A (ko) * 2020-10-28 2023-06-26 램 리써치 코포레이션 회전 가능한 상단 플레이트 어셈블리를 갖는 멀티-스테이션 툴
JP2024538650A (ja) * 2021-10-08 2024-10-23 ラム リサーチ コーポレーション マルチステーション処理モジュールおよびリアクタアーキテクチャ

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3652444A (en) * 1969-10-24 1972-03-28 Ibm Continuous vacuum process apparatus
US5183547A (en) * 1989-09-13 1993-02-02 Sony Corporation Sputtering apparatus and system for sputtering employing same
US5688389A (en) * 1993-10-25 1997-11-18 Viratec Thin Films, Inc. Method and apparatus for thin film coating an article
US6183615B1 (en) * 1992-06-26 2001-02-06 Tokyo Electron Limited Transport system for wafer processing line
US6235171B1 (en) * 1998-10-13 2001-05-22 Tdk Corporation Vacuum film forming/processing apparatus and method
CN1599807A (zh) * 2001-10-03 2005-03-23 东京毅力科创株式会社 用于多个半导体衬底的高压处理室
US20090084671A1 (en) * 2007-10-02 2009-04-02 Hitachi Plasma Display Limited Sputtering apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000064042A (ja) * 1998-08-19 2000-02-29 Shibaura Mechatronics Corp 回転アーム式スパッタ装置
US6609877B1 (en) * 2000-10-04 2003-08-26 The Boc Group, Inc. Vacuum chamber load lock structure and article transport mechanism
JP4557418B2 (ja) * 2000-12-27 2010-10-06 芝浦メカトロニクス株式会社 多層膜の形成装置
JP4683453B2 (ja) * 2001-04-27 2011-05-18 芝浦メカトロニクス株式会社 真空処理装置
JP4521177B2 (ja) * 2003-11-10 2010-08-11 パナソニック株式会社 真空処理装置及び真空処理システム
US20080260499A1 (en) 2007-04-16 2008-10-23 Van Der Meulen Peter Facet adapter for a wafer handler
CN201485501U (zh) * 2009-07-22 2010-05-26 因派科特涂料公司 用于在真空下实施衬底的表面处理的设备
KR20160138295A (ko) * 2014-04-02 2016-12-02 어플라이드 머티어리얼스, 인코포레이티드 기판 프로세싱을 위한 시스템, 기판 프로세싱을 위한 시스템을 위한 진공 회전 모듈 및 기판 프로세싱 시스템을 작동시키는 방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3652444A (en) * 1969-10-24 1972-03-28 Ibm Continuous vacuum process apparatus
US5183547A (en) * 1989-09-13 1993-02-02 Sony Corporation Sputtering apparatus and system for sputtering employing same
US6183615B1 (en) * 1992-06-26 2001-02-06 Tokyo Electron Limited Transport system for wafer processing line
US5688389A (en) * 1993-10-25 1997-11-18 Viratec Thin Films, Inc. Method and apparatus for thin film coating an article
US6235171B1 (en) * 1998-10-13 2001-05-22 Tdk Corporation Vacuum film forming/processing apparatus and method
CN1599807A (zh) * 2001-10-03 2005-03-23 东京毅力科创株式会社 用于多个半导体衬底的高压处理室
US20090084671A1 (en) * 2007-10-02 2009-04-02 Hitachi Plasma Display Limited Sputtering apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115142031A (zh) * 2021-03-31 2022-10-04 芝浦机械电子装置株式会社 成膜装置
TWI808705B (zh) * 2021-03-31 2023-07-11 日商芝浦機械電子裝置股份有限公司 成膜裝置
CN115142031B (zh) * 2021-03-31 2023-12-15 芝浦机械电子装置株式会社 成膜装置

Also Published As

Publication number Publication date
US11174544B2 (en) 2021-11-16
KR20200032006A (ko) 2020-03-25
CN114277353B (zh) 2024-06-18
CN114277353A (zh) 2022-04-05
CN110904425B (zh) 2021-11-16
TW202016335A (zh) 2020-05-01
US20200087774A1 (en) 2020-03-19
TWI730406B (zh) 2021-06-11
KR102335300B1 (ko) 2021-12-06

Similar Documents

Publication Publication Date Title
CN110904425B (zh) 真空隔离的批处理系统
US8303764B2 (en) Apparatus and methods for transporting and processing substrates
US6494670B2 (en) Three chamber load lock apparatus
US8252116B2 (en) Perimeter partition-valve with protected seals and associated small size process chambers and multiple chamber systems
US20060251499A1 (en) Linear substrate delivery system with intermediate carousel
JPH02185971A (ja) 半導体ウェハの真空処理装置
JPH02179874A (ja) 真空環境内で処理する半導体ウェハの保持装置
JP2004523880A (ja) 処理装置用ダブル二重スロット式ロードロック
KR20220031700A (ko) 동시 기판 이송을 위한 로봇
US6350097B1 (en) Method and apparatus for processing wafers
KR102674611B1 (ko) 기판 프로세싱 모듈 및 워크피스를 이동시키는 방법
US20100189532A1 (en) Inline-type wafer conveyance device
KR20230017322A (ko) 고온 및 진공 격리 프로세싱 미니 환경들
KR101317995B1 (ko) 물품 처리 방법 및 장치
US20220223367A1 (en) Reduced substrate process chamber cavity volume
KR20230051166A (ko) 페이스팅 프로세스 동안 보호 디스크로 기판 홀더 교체
US20230420289A1 (en) MULTl-STATION TOOL WITH ROTATABLE TOP PLATE ASSEMBLY
JP7578724B2 (ja) 高温真空分離処理ミニ環境
JPH02173263A (ja) スパッタリング装置の基板処理方法およびその装置
US20070077134A1 (en) Vacuum handler systems and processes for flexible automation of semiconductor fabrication
WO2004069698A2 (en) Transport system having shared load-lock front-end assembly

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant