TWI730406B - 真空隔離的批次處理系統 - Google Patents

真空隔離的批次處理系統 Download PDF

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TWI730406B
TWI730406B TW108132968A TW108132968A TWI730406B TW I730406 B TWI730406 B TW I730406B TW 108132968 A TW108132968 A TW 108132968A TW 108132968 A TW108132968 A TW 108132968A TW I730406 B TWI730406 B TW I730406B
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vacuum chamber
processing module
vacuum
port
semiconductor substrate
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TW202016335A (zh
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阿瑟 凱格勒
凱文 巴貝拉
丹尼爾 古德曼
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美商先進尼克斯有限公司
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Abstract

本發明係關係一種氣相沉積系統，包括一個真空腔室以及被配置成處理半導體襯底的兩個或更多個處理模組。每個處理模組可移除地連接至所述真空腔室的相應埠，使得當連接到所述相應埠時，每個處理模組與所述真空腔室真空連通。埠密封機構，該埠密封機構被配置成在每個埠處形成真空密封，使得當第一埠被密封且第一處理模組與該第一埠斷開連接時，在所述第一處理模組通向大氣壓力的同時在所述真空腔室內保持真空狀態。

Description

真空隔離的批次處理系統
本發明涉及半導體器件製造方法和系統。
通過物理氣相沉積(PVD)的濺射在半導體行業中廣泛用於在半導體晶片上沉積薄金屬膜。這些膜通常由Ti、Cu、Al、Au、Ta等組成。在準備薄膜沉積時，通常要進行濺射蝕刻清潔。在清潔表面之後，可以使用若干類型的氣相沉積技術之一。在薄膜沉積之後，可以繼續進行其他製造和/或封裝步驟。
在半導體襯底上沉積金屬薄膜的常用方法是使用多個單晶片處理腔室，其中每個腔室一次只能沉積一種材料。然而，將單獨的單晶片處理腔室專用於單個技術增加了這種系統的成本並且還需要中間機器人晶片處理，限制了系統輸送量。
批次處理系統的優點是可以在單個大真空腔室中同時處理若干晶片。單腔室批次處理系統的尺寸通常被設定成每個腔室容納約3至6個晶片。然後使用PVD技術同時塗覆所有晶片。這種批次處理系統的一個限制是，公共真空腔室內的多個處理位置無法相互真空隔離。這意味著維修包含相應處理位置的一個處理模組需要給所有處理模組通氣。
通常，在恢復生產之前，給處理腔室通氣需要重新 驗證，降低了系統可用性。對於一些處理腔室，給腔室通氣會產生額外的維修。例如，如果給腔室通氣，通常必須清潔使用TiW作為靶材的PVD腔室的遮罩件，以防止產生顆粒。
其他批次處理系統可以提供各個處理模組的真空隔離。然而，這種單獨的真空隔離需要昂貴的泵送裝置。
如本發明所述，理想的解決方案提供了批次處理系統的輸送量，所述批次處理系統具有單獨真空隔離系統的優點，而且針對每個單獨腔室並沒有複雜且昂貴的真空設備。本發明中的技術提供了批次處理系統，所述批次處理系統針對多個處理腔室的處理使用公共真空腔室泵送，而不是每個腔室都有自己的真空泵送系統。因此，單個真空泵或真空泵裝置可以用於批次處理系統。可以通氣維修一些處理模組，同時保持其他處理模組處於真空狀態。此外，在同時拆卸一個或多個處理模組進行維修時，可以在系統內在真空狀態下繼續對半導體襯底進行氣相沉積處理。
一個實施例包括具有若干部件的氣相沉積系統。真空腔室被配置成保持氣體壓力小於大氣壓力。真空腔室的尺寸被設定成允許在真空腔室內運送兩個或更多個半導體襯底。兩個或更多個處理模組各自被配置成處理半導體襯底。每個處理模組可移除地連接至真空腔室的相應埠，使得當連接到相應埠時，每個處理模組與真空腔室真空連通。當連接到相應埠時，每個處理模組被配置成保持氣體壓力小於大氣壓力。埠密封機構被配置成在每個埠處形成真空密封，使得當第一埠被密封並且對應於第一埠的第一處理模組與第一埠斷開連接時，在第一處理模組通向大氣 壓力的同時在真空腔室內保持真空狀態。
另一個實施例包括具有若干部件的氣相沉積系統。這些部件包括具有多個處理模組的主真空腔室以及能夠在所述主真空腔室內移動的閥板。其他部件包括用於將閥板從備用位置移動到密封位置的載體，所述備用位置允許在處理模組中對多晶片進行處理，所述密封位置將處理模組與主真空腔室隔離。沉積系統還包括鎖環，所述鎖環用於將閥板O形環壓緊到處理模組的密封表面上，提供足夠的O形環壓緊以保持閥板上方的大氣狀態和閥板下方的高真空狀態。
當然，為清晰起見，已經闡述了本發明中描述的不同步驟的討論順序。通常，可以以任何適當循序執行這些步驟。此外，儘管本發明中的每個不同特徵、技術、配置等可以在本公開的不同位置討論，但意圖是每種構思可以彼此獨立地執行或者彼此組合執行。因此，可以以許多不同方式來實施和看待本發明。
應注意的是，此發明內容部分未指定本公開或要求保護的發明的每個實施例和/或遞增的新穎方面。此發明內容相對於常規技術僅提供了對不同實施例和新穎性的對應點的初步討論。對於本發明和實施例的其他細節和/或可能視角，讀者可以參閱本發明的具體實施方式部分和對應的附圖(如下文進一步討論的)。
200‧‧‧PVD系統
201‧‧‧前開式晶圓傳送盒
202‧‧‧批量排氣模組
203‧‧‧前端
204‧‧‧機器人
205‧‧‧負載鎖定部
206‧‧‧真空傳送模組
207‧‧‧機器人
208‧‧‧冷卻卡盤
209‧‧‧閘閥
210‧‧‧襯底
211‧‧‧載體
212‧‧‧主真空腔室
213‧‧‧狹槽
220‧‧‧批次處理腔室
225‧‧‧載體圓盤
226‧‧‧閥板
227‧‧‧備用支撐連杆
228‧‧‧鎖環
229‧‧‧處理卡盤
230‧‧‧蝕刻處理模組
230a‧‧‧蝕刻處理模組
230b‧‧‧蝕刻處理模組
231‧‧‧底座
232‧‧‧密封表面
233‧‧‧O形環
239‧‧‧基座
240a‧‧‧沉積處理模組
240b‧‧‧沉積處理模組
240c‧‧‧沉積處理模組
242‧‧‧螺旋傾斜表面
243‧‧‧週邊間隙
244‧‧‧輥
245‧‧‧滾珠軸承座圈
246‧‧‧鎖環支撐件
當結合附圖參考詳細說明時，可以更好地理解本發明。
圖1示意性地示出了PVD系統的俯視圖。
圖2A和2B示意性地示出了批次處理腔室的透視圖，其中一些部件在圖2B中是透明的。
圖3示意性地示出了操作期間的處理模組的放大截面透視圖。
圖4A示意性示出了處於維修模式的圖3的處理模組的放大截面透視圖，其中為了清楚起見，省略了真空腔室。
圖4B與圖4A類似，但包括真空腔室。
圖5A示意性示出了多模組腔室的放大截面透視圖。
圖5B示意性地示出了操作期間的圖2A和圖2B的批次處理腔室的透視圖。
圖6A示意性示出了多模組腔室的放大截面透視圖。
圖6B示意性示出了多模組腔室內的對準構件的放大透視圖。
圖7A示意性示出了多模組腔室的放大截面透視圖。
圖7B示意性示出了多模組腔室內的對準構件的放大透視圖。
圖8示意性示出了多模組腔室的放大截面透視圖。
圖9A示意性示出了處理模組的放大截面透視圖。
圖9B示意性示出了圖9A的處理模組的截面圖。
圖10A示意性示出了沉積閥板的部分透視圖。
圖10B示意性示出了圖10A的沉積閥板的放大仰視透視圖。
圖11A示意性地示出了鎖環。
圖11B示意性示出了圖11A的鎖環的透視圖。
圖12A示意性地示出了圖11A的旋轉後的鎖環。
圖12B示意性地示出了圖12A的鎖環的截面圖。
圖13A示意性地示出了圖12A的進一步旋轉後的鎖環。
圖13B示意性地示出了圖13A的鎖環的截面圖。
圖14示意性地示出了處於打開位置的處理模組的透視圖。
現在將更詳細地描述示例氣相沉積系統。圖1示出了PVD系統200。所述PVD系統200包括具有一個傳送位置的批次處理腔室220和五個處理模組。系統200被配置成通過將所有晶片同時從一個位置移動到下一個位置來同時處理五個襯底。應注意的是，其他系統可以有更多或更少的位置。五個處理位置在兩個蝕刻處理模組230a和230b以及三個沉積處理模組240a、240b和240c內居中。應注意的是，圖1中所示的部件201、202、203、204、205、206、207和208在本領域中以各種形式已知，因此對本領域技術人員而言是顯而易見的，而圖1中所示的部件209、211、220、230和240與本發明相關聯。此外，雖然從以下描述中顯而易見的是，本設備的各個部件在操作中是可移動的且能被驅動，但是為了清楚起見，省略了用於實現這種驅動的裝置。為避免疑慮，這些部件的致動可以以多種方式實現，例如通過連接合適的電操作電動機或致動器，所述電動機或致動器由操作者或更常見地由控制裝置(未示出)(如合適的程式設計電腦或處理器)控制。
如本領域中眾所周知的，在操作期間，前開式晶圓傳送盒(FOUP)201內的襯底210由前端203處的機器人204運送到批量排氣模組202。襯底210可以由半導體材料組成或可以為複合晶片，如用於扇出晶圓級封裝。襯底可以是圓形或者矩形。在排氣處理之後，機器人204將襯底210運送到負載鎖定部205進行抽空降壓。在抽空降壓之後，如本領域中眾所周知的， 真空機器人207將襯底210傳送到真空傳送模組206中的冷卻卡盤208。一旦冷卻，機器人207就通過閘閥209移動襯底210並將襯底放置在載體211上。載體圓盤225(參見例如圖2B)順時針旋轉，從而將載體211和襯底放入處理模組230a中進行濺射蝕刻預清潔。在處理模組230a中處理襯底210的同時，將其他襯底210放置在附接至載體圓盤225的下一個載體211上。
相應載體211上有襯底210等的載體圓盤225繼續旋轉穿過其他處理模組，從而按循序執行每個工序。處理模組可以包括第二濺射蝕刻預清潔模組230b、第一PVD濺射沉積模組240a、第二PVD濺射沉積模組240b和第三PVD濺射沉積模組240c。各個沉積模組可以用於沉積相同或不同金屬。如所能理解的，可以使用各個沉積組合。載體211再次旋轉直到襯底位於閘閥209處的傳送位置。機器人207將襯底210傳送至負載鎖定部205。在通氣後，機器人204將經處理的襯底返回FOUP 201。
圖2A展示了批次處理腔室220的細節。這些細節包括一個主真空腔室212以及圍繞主真空腔室212排列的處理模組230a、230b、240a、240b和240c。圖2B示出了批次處理腔室220，其中主真空腔室212被隱藏以便顯示內部細節。具有用於傳送襯底210的多個位置的傳送圓盤或多模組載體225能夠在主真空腔室212內旋轉。示出了位於備用位置且由備用支撐連杆227夾持的閥板226。晶片或襯底210在無處理腔室的位置通過真空腔室212的側面上的狹槽213插入該腔室212中。此動作借助於真空機器人207實現並且主真空腔室212的此側面附接到真空傳送模組206。
圖3示出了操作期間的處理模組230，其中處理卡盤229在處理期間支撐襯底210。對多模組載體225進行旋轉定 位，使得處理卡盤229可以通過多模組載體225的開口豎直移動。使用備用連杆227將閥板226定位在升降基座239和多模組載體225豎直上方的平面中。連杆227中的對準構件237確保閥板226相對於基座239居中。鎖環228位於閥板226與處理模組230的底座231之間的垂直平面中。
圖4A示出了處於維修模式的處理模組230，在維修模式，可以接近處理模組230。如所示出的，模組230樞轉打開約180度，從而可以接近處理模組230的底座231和內表面。樞軸線被設置成大致與真空腔室212的圓形邊緣相切。這種接近允許預防性維修操作，如更換可能在處理期間積聚碎屑的各種遮罩元件。圖4B示出了閥板226，閥板226抵靠在主真空腔室212的通常為圓形的內密封表面232上而保持就位，壓緊位於密封表面232附近的O形環233以提供密封，使得主腔室212可以在維修操作期間保持高真空狀態。
現在將描述閥板示例操作。為了啟動閥板226，從圖3所示的正常操作模式移動到圖4A及圖4B中的維修模式，可以執行幾個步驟。在圖5A和5B中，使用多模組載體225的旋轉運動從多模組腔室212移除襯底210。多模組載體225然後旋轉直到開口直接位於閥板升降基座239上方和處於備用位置的閥板226下方。
在待維修的模組中的每個模組中，閥板升降基座239向上移動，將閥板226從支撐連杆227上抬起並使對準構件237對中。這在圖6A和6B中示出了。
驅動支撐連杆227擺離閥板226。閥板226現在支撐在升降基座239上，如圖7A和7B所示。
現在參照圖8，閥板基座239向下移動，從而將閥 板226放在多模組載體225上。基座239繼續向下移動到載體225下方，使得載體225可自由旋轉。
如圖9A和圖9B中所示出的，包含一個或多個閥板226的多模組載體圓盤225旋轉，將每個閥板226定位在其相應處理模組230的下方。
如圖10A和圖10B所示出的，處理卡盤229向上移動，帶動閥板226與密封表面232接觸。閥板226具有週邊間隙243，這些週邊間隙允許閥板移動經過設置在鎖環228中的輥244(參見圖11A及圖11B)，該鎖環用作滾子軸承。雖然示出的是使用滾子軸承，但本領域的技術人員將理解的是，其他軸承(例如滑動軸承或滾珠軸承)也可以用於或替代地用於在閥板226與鎖環228之間提供低摩擦引導運動。閥板226還具有螺旋傾斜表面242，螺旋傾斜表面242被配置成將方位運動轉換成杠杆軸向力，足以壓緊O形環233並抵抗大氣力，該大氣力在將處理模組230通氣到大氣壓力時抵抗軸向力。
圖11A和11B展示了使用傾斜表面242旋轉至接合輥244的鎖環228。
當輥244沿著閥板傾斜表面242行進時，鎖環228繼續旋轉，從而豎直移動閥板226以壓緊O形環233抵靠在密封表面232上。圍繞鎖環228的周邊的鎖環支撐件246上的滾珠軸承座圈245支撐該運動的垂直和徑向負荷。圖12A和12B中展示了示例結果。
現在參照圖13A和13B，鎖環228可以旋轉到最終位置，充分壓緊O形環233並且移出閥板傾斜表面242，避免大氣壓力促使鎖環228向後旋轉。
一個或多個處理模組230可以通氣到大氣壓力並 且樞轉打開到維修位置。圖14展示了樞轉到打開位置的所有處理模組230。
因此，單泵裝置可以用於在真空腔室和處理模組中形成真空條件，同時實現對每個處理模組的獨立維修接觸。應注意的是，本發明中的真空或真空條件不限於絕對真空，但是預期壓力小於大氣壓力。
一個實施例包括具有若干部件的氣相沉積系統。真空腔室被配置成保持氣體壓力小於大氣壓力。真空腔室的尺寸被設定成允許在真空腔室內運送兩個或更多個半導體襯底。這可以包括分開傳送，因為襯底被傳送至不同處理工位。兩個或更多個處理模組被配置成處理半導體襯底。每個處理模組可移除地連接至真空腔室的相應埠(開口)，使得當連接到相應埠時，每個處理模組與真空腔室真空連通。當連接到相應埠時，每個處理模組被配置成保持氣體壓力低於大氣壓力。換句話說，處理模組可以連接到真空腔室，形成真空密封，從而可以通過真空腔室和連接的處理模組保持真空。
真空腔室包含埠密封機構，所述埠密封機構被配置成在每個埠處形成真空密封，使得當第一埠被密封並且對應於第一埠的第一處理模組與第一埠斷開連接時，在第一處理模組通向大氣壓力的同時在真空腔室內保持真空狀態。換句話說，處理模組連接的真空腔室中的開口可以被關閉或密封以分離各個處理模組，同時仍然保持真空腔室和其他連接的處理模組內的真空狀態。相應地，位於真空腔室或其他連接的處理模組內的襯底保持在真空狀態。
在其他實施例中，系統包括至少兩個濺射蝕刻清潔處理模組和至少兩個氣相沉積處理模組。因此，如果需要接近給 定處理模組以進行維修，則可以使用剩餘連接的處理模組繼續對晶片進行處理。處理模組可以樞轉地連接至真空腔室或氣相沉積系統並且可以樞轉或旋轉遠離真空腔室以便接近遮罩件，從而更換或清潔表面。在此清潔期間，可以使用仍然附接到真空腔室的剩餘處理模組繼續進行晶片處理。此外，在維修未附接的處理模組的同時，每個附接的處理模組可以處理晶片。因此，在一個或多個處理模組接收維修時，可以繼續進行晶片處理操作。這減少了對輸送量的任何影響，與此同時，為系統提供了更少的真空泵或單個真空泵。
如上所述，襯底載體可以用於在真空腔室內運送半導體襯底。該真空腔室可以是具有如所述的圓形通道的環形形狀、或可以是線性形狀、矩形形狀等。
閥板可以用於密封真空腔室的埠(開口)。可以實施其他密封件。可以使用閥板實施鎖環來將閥板牢固地附接到埠，以保持真空腔室內的真空狀態。
在前面的描述中已經闡述了具體細節，如處理系統的特定幾何結構以及對其內使用的各種部件和技術的描述。然而，應當理解的是，本發明中的技術可以在脫離這些具體細節的其他實施例中實施，並且這些細節是出於解釋而非限制的目的。已經參照附圖對本文中公開的實施例進行了描述。同樣地，出於解釋的目的，給出了具體數位、材料和構型以便提供透徹理解。儘管如此，也可以在沒有這些具體細節的情況下實踐實施例。用相同的附圖標記表示具有基本相同功能結構的部件，因此可以省略任何多餘的描述。
已經將各個技術描述為多個離散操作以幫助理解各個實施例。描述順序不應被解釋為暗示這些操作必須依賴於順 序。事實上，這些操作不必按呈現順序進行。可以按與所描述的實施例不同的順序來執行所描述的操作。可以執行各種附加的操作和/或可以在附加實施例中省略所描述的操作。
本發明中所使用的“襯底”或“目標襯底”一般是指根據本發明處理的物件。襯底可以包括器件的任何材料部分或結構，特別是半導體或其他電子器件，並且可以是例如基礎襯底結構(如半導體晶片、掩模版或在基礎襯底結構上或覆蓋基礎襯底結構的層(如薄膜)。因此，襯底不限於任何特定的圖案化或未圖案化的基礎結構、底層或覆蓋層、而是預期包括任何這樣的層和/或基礎結構、及其任何組合。該描述可以參考特定類型的襯底，但這僅出於說明的目的。
本領域技術人員還將理解的是，在仍實現本發明的相同目的的情況下，可以對上述技術的操作進行許多變更。這些變更皆包含在本公開的範圍內。因此，本發明的實施例的前述描述不旨在是限制性的。更確切地說，在以下權利要求書中闡述了對本發明的實施例的任何限制。
212‧‧‧主真空腔室
213‧‧‧狹槽
220‧‧‧批次處理腔室
230a‧‧‧蝕刻處理模組
230b‧‧‧蝕刻處理模組
240a‧‧‧沉積處理模組
240b‧‧‧沉積處理模組
240c‧‧‧沉積處理模組

Claims (12)

  1. 一種氣相沉積系統，包括：真空腔室，所述真空腔室被配置成保持氣體壓力小於大氣壓力，所述真空腔室的尺寸被設定成允許在所述真空腔室內運送兩個或更多個半導體基板；兩個或更多個處理模組，所述兩個或更多個處理模組各自被配置成處理半導體基板，每個處理模組可移除地連接至所述真空腔室的相應埠，使得當連接到所述相應埠時，每個處理模組與所述真空腔室真空連通，當連接到所述相應埠時，每個處理模組被配置成保持所述氣體壓力小於所述大氣壓力；以及埠密封機構，所述埠密封機構被配置成在每個埠處形成真空密封，使得當第一埠被密封並且對應於所述第一埠的第一處理模組與所述第一埠斷開連接時，在所述第一處理模組通向大氣壓力的同時在所述真空腔室內保持真空狀態；其中所述埠密封機構包括閥板，所述閥板覆蓋所述相應的埠以形成所述真空密封；該氣相沉積系統進一步包括升降機構，所述升降機構被配置成選擇性地將所述閥板提升到所述第一埠或將所述半導體基板提升到所述第一處理模組中。
  2. 如申請專利範圍第1項所述之氣相沉積系統，其中當所述第一埠被密封並且所述第一處理模組斷開連接時，位於所述真空腔室內的半導體基板保持在所述真空狀態。
  3. 如申請專利範圍第1項所述之氣相沉積系統，其中當所述第一埠被密封並且所述第一處理模組斷開連接時，位於與第二埠連接的第二處理模組內的給定半導體基板保持在所述真空狀態。
  4. 如申請專利範圍第1項所述之氣相沉積系統，其中所述兩 個或更多個處理模組中的至少一個處理模組被配置成當所述半導體基板位於其內時對所述半導體基板進行濺射刻蝕，並且其中所述兩個或更多個處理模組中的至少一個處理模組被配置成當所述半導體基板位於其內時在所述半導體基板上氣相沉積薄膜。
  5. 如申請專利範圍第1項所述之氣相沉積系統，其中每個處理模組樞轉地附接至所述真空腔室，並且能夠通過使每個處理模組樞轉遠離所述真空腔室的所述相應埠而從所述相應埠移除。
  6. 如申請專利範圍第1項所述之氣相沉積系統，其中所述氣相沉積系統被配置成使用所述兩個或更多個處理模組同時處理多個半導體晶片。
  7. 如申請專利範圍第1項所述之氣相沉積系統，進一步包括基板載體，所述基板載體在所述真空腔室內運送半導體基板。
  8. 如申請專利範圍第7項所述之氣相沉積系統，其中所述基板載體具有圓形通道，所述圓形通道被配置成通過在所述兩個或更多個處理模組之間轉動來運送所述半導體基板。
  9. 如申請專利範圍第1項所述之氣相沉積系統，進一步包括鎖環，所述鎖環被定位在所述相應埠處並且被配置成保持所述閥板密封所述相應埠。
  10. 如申請專利範圍第1項所述之氣相沉積系統，其中所述兩個或更多個處理模組包括至少四個處理模組，其中所述至少四個處理模組中的至少兩個處理模組被配置成當所述半導體基板位於其內時對所述半導體基板進行濺射刻蝕，並且其中所述至少四個處理模組中的至少兩個處理模組被配置成當所述半導體基板位於其內時在所述半導體基板上氣相沉積薄膜。
  11. 如申請專利範圍第1項所述之氣相沉積系統，其中單個真空泵為所述真空腔室以及所述兩個或更多個處理模組創建所述真 空條件。
  12. 一種氣相沉積系統，包括：真空腔室；與所述真空腔室真空連通的兩個或更多個處理模組；設置在所述真空腔室內的閥板；可旋轉閥座，所述閥座被配置為旋轉並因此運送所述閥板以將所述閥板定位到至少一個處理模組的密封表面下方；以及鎖環，所述鎖環被配置成：當所述至少一個處理模組從與所述真空腔室的真空連通移除並進入大氣壓力時，使用足夠的力將已定位所述閥板固定抵靠在至少一個處理模組的所述密封表面上來保持所述真空腔室中的真空壓力。
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