CN115142031B - 成膜装置 - Google Patents

成膜装置 Download PDF

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Publication number
CN115142031B
CN115142031B CN202210300223.4A CN202210300223A CN115142031B CN 115142031 B CN115142031 B CN 115142031B CN 202210300223 A CN202210300223 A CN 202210300223A CN 115142031 B CN115142031 B CN 115142031B
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chamber
workpiece
film forming
pretreatment
plate
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CN115142031A (zh
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西垣寿
吉村浩司
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Shibaura Mechatronics Corp
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Shibaura Mechatronics Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Optics & Photonics (AREA)

Abstract

本发明提供一种能够抑制预处理的影响而实现稳定的成膜的成膜装置。本发明的实施方式的成膜装置(1)具有：腔室(2)，可以将内部设为真空；搬送体(3)，设置在腔室(2)内，以圆周的轨迹循环搬送工件(W)；成膜部(8)，设置在腔室(2)内，通过溅镀对由搬送体(3)循环搬送的工件(W)进行成膜处理；加载互锁室(6)，在维持腔室(2)内的真空的状态下从大气空间搬入搬出工件(W)；以及预处理部(7)，设置在腔室(2)的邻接于加载互锁室(6)的位置，对从加载互锁室(6)搬入的工件(W)在与搬送体(3)隔离的状态下进行预处理。

Description

成膜装置
技术领域
本发明涉及一种成膜装置。
背景技术
在以手机为代表的无线通信设备的制造工序中，有时会利用树脂将作为电子零件的半导体装置密封，并在其上表面及侧面形成电磁波屏蔽膜，所述电磁波屏蔽膜具有对电磁波的屏蔽功能。另外，在半导体、显示器或光碟等各种产品的制造工序中，有时会在例如晶片、玻璃、树脂基板上形成光学膜等膜。
作为这样的在电子零件、晶片、玻璃、树脂基板等工件的表面进行成膜的方法，溅镀法受到关注。作为利用溅镀法的成膜装置，提出有使用等离子体来进行成膜的等离子体处理装置。等离子体处理装置中，向配置有靶材的真空容器导入惰性气体并施加电压。使等离子体化而成的惰性气体的离子撞击成膜材料的靶材，使从靶材敲出的材料沉积在工件上来进行成膜。
作为用于进行溅镀下的成膜的装置，提出有如下装置：通过真空腔室内的转台使工件一边以圆周的轨迹循环搬送一边通过成膜室，由此，借助通过成膜室这一过程来进行成膜。
[现有技术文献]
[专利文献]
[专利文献1]日本专利特开2018-003152号公报
发明内容
[发明所要解决的问题]
为了提高这样的工件与所形成的膜的密接性，会在成膜前对工件的表面进行等离子体下的轰击处理。在所述循环搬送式装置中，为了有效率地进行溅镀下的成膜以及轰击处理，在真空腔室内设置成膜室和等离子体处理室，通过真空腔室内的转台使工件一边以圆周的轨迹循环搬送一边通过等离子体处理室，由此来进行轰击处理，之后停止等离子体处理室内的等离子体生成。然后，在成膜室内生成等离子体，使工件一边循环搬送一边通过成膜室，由此来进行成膜。
这样的循环搬送式的等离子体处理是通过利用氩气生成等离子体来进行，但等离子体处理室与成膜室只是被壁隔开，所述壁具有供搭载于转台上加以循环搬送的工件通过的间隙，所以，有导入到等离子体处理室内的氩气混入成膜室而引发成膜室的压力变动之虞。
例如，等离子体处理室的开口与转台之间须空出供工件通过的5mm左右的间隙。这是以如下方式考虑得到的数值：即便发生设置有等离子体处理室的腔室的盖的变形造成的高度水平的变动、转台的平坦度的变动，工件也能通过。因此，未必能说是对于防止气体从间隙泄漏而言最佳的间隙。
在进行溅镀下的成膜时，将成膜装置的腔室减压至高真空。由此，能减少存在于腔室内的杂质，而且能减少气体分子以增大平均自由行程。结果，从靶材敲出的成膜材料到达工件而成为稳定、致密的膜质。因而，若等离子体处理室的内部的气体泄漏至成膜室等其他空间而导致成膜室的真空度变差，则有得不到稳定的膜质之虞。进而，在成膜室内使用氩气、等离子体处理室内使用氩气与氧气的混合气体的情况下，有引发一方气体侵入另一方的污染而妨碍两者的反应之虞。
另外，作为成膜的预处理，有时会进行脱气处理，即，通过对工件进行加热而预先将工件中包含的水分和大气排除。但在所述那样的基于旋转的循环搬送型成膜装置中，在设置加热室来进行脱气处理的情况下，若解吸出来的气体成分在腔室内扩散而混入成膜室、在成膜时作为杂质附着在工件上，也有得不到稳定的膜质之虞。
本发明是为了解决所述那样的现有技术的问题而提出的，其目的在于提供一种能够抑制预处理的影响而实现稳定的成膜的成膜装置。
[解决问题的技术手段]
为达成所述目的，实施方式的成膜装置具有：腔室，可以将内部设为真空；搬送体，设置在所述腔室内，以圆周的轨迹循环搬送工件；成膜部，设置在所述腔室内，通过溅镀对由所述搬送体循环搬送的所述工件进行成膜处理；加载互锁室，在维持所述腔室内的真空的状态下从大气空间搬入搬出所述工件；以及预处理部，设置在所述腔室内，设置在邻接于所述加载互锁室的位置，对从所述加载互锁室搬入的所述工件在与所述搬送体隔离的状态下进行预处理。
[发明的效果]
根据本发明，可以提供一种能够抑制预处理的影响而实现稳定的成膜的成膜装置。
附图说明
图1为表示实施方式的简化后的平面图。
图2的(A)为图1的A-A线截面图，图2的(B)为预处理部的A-A线截面图。
图3为表示实施方式的移送臂的平面图。
图4的(A)为表示去往加载互锁室的搬送板的定位状态的A-A线截面图，图4的(B)为表示加载互锁室的密封状态的A-A线截面图。
图5的(A)为表示加载互锁室已抽真空的状态的A-A线截面图，图5的(B)为表示搬送板往腔室内的搬入状态的A-A线截面图。
图6的(A)为表示将移送臂定位到搬送板下部的状态的A-A线截面图，图6的(B)为表示由移送臂支承有搬送板的状态的A-A线截面图。
图7的(A)为表示将搬送板定位到预处理部的状态的A-A线截面图，图7的(B)为表示搬送板将开口覆盖的状态的A-A线截面图。
图8的(A)为表示在预处理部中对工件进行预处理的状态的A-A线截面图，图8的(B)为表示加载互锁室的密封状态的A-A线截面图。
图9的(A)为表示加载互锁室已破除真空的状态的A-A截面图，图9的(B)为表示加载互锁室开放的状态的A-A截面图。
图10的(A)为表示将下一搬送板定位到加载互锁室的状态的A-A线截面图，图10的(B)为表示加载互锁室已抽真空的状态的A-A线截面图。
图11为表示将已完成预处理的搬送板载置于搬送体的状态的A-A线截面图。
图12为表示预处理部的开口的变形例的A-A线截面图。
图13为表示预处理部的另一实施例的A-A线截面图。
[符号的说明]
1：成膜装置
2：腔室
2b：通气道
3：搬送体
4：驱动部
5：搬入搬出部
6：加载互锁室
7：预处理部
8：成膜部
21：开口
22：开口
22a：突出部
23：开口
24：通气道
25：管道
28：分隔部
31：马达
34：转轴
35：支承孔
41：密封部
42：施力部
43：移送部
51：臂
52：保持体
52a：保持机构
71：容器
72：筒状电极
72a：开口部
72b：凸缘
74：RF电源
75：匹配盒
76：导入部
76a：管道
77：通气道
77a：管道
78：加热部
79：电源
80：控制装置
81：靶材
82：垫板
83：箱型遮蔽构件
411：密封体
411a：载置台
412：轴杆
413：驱动机构
421：推板
422：轴杆
423：驱动机构
431：移送臂
431a：板
431b：箍圈
432：转轴
433：驱动机构
d：距离
G：工艺气体
P：处理空间
S：搬送板
S1：凸缘
S2：销
TR：搬送机构
W：工件。
具体实施方式
参照附图，对本发明的实施方式(以下称为本实施方式)进行具体说明。
[概要]
如图1的平面图及图2的(A)(图1的A-A线截面图)所示，本实施方式的成膜装置1是利用等离子体对各工件W进行成膜的装置。成膜装置1具有腔室2，所述腔室2可以通过排气将内部设为真空。在所述腔室2的内部配置有搬送体3。搬送体3以圆周的轨迹循环搬送工件W。被搬送的工件W载置于搬送板S上。
成膜装置1具有驱动部4、搬入搬出部5、加载互锁室6、预处理部7、成膜部8。驱动部4进行加载互锁室6的开闭、加载互锁室6与搬送体3之间的搬送板S的移送、搬送板S相对于预处理部7的定位。搬入搬出部5向腔室2搬入、搬出搬送板S。加载互锁室6能在维持腔室2内的真空的状态下实现搬送板S上载置的工件W的搬入搬出。预处理部7进行对工件W的等离子体处理。成膜部8通过溅镀对由搬送体3循环搬送的工件W进行成膜处理。
[工件]
如图1所示，在本实施方式中，作为成膜对象即工件W的例子，使用将埋设有半导体芯片等电子零件的电极面的保护带贴附在框状的框架上得到的物体。但工件W的种类、形状及材料并无特定的限定。
[搬送板]
搬送板S是搭载工件W而由搬送体3搬送的构件。本实施方式的搬送板S是上方开口的薄的有底圆筒形状，具有上端的外周的直径扩大而成的凸缘S1。在搬送板S的内底面设置有以与内底面空出间隔的方式支承工件W的销S2。通过空出并保持搬送板S的内底面与工件W的间隔，因通过成膜部8时暴露的等离子体的热而积蓄在搬送体3中的热不易经由搬送板S的内底面传递至工件W。由此，能够抑制工件W在成膜中出现温度上升来进行成膜，从而能防止膜质的变动。再者，搬送板S的形状只要能支承工件W即可，所以不限定于圆筒形状，也可为其他形状例如四边形、多边形、与工件W相似的形状等。
[腔室]
如图1及图2的(A)、图2的(B)所示，腔室2为圆柱形状的容器。腔室2的一侧面为了加载互锁室6而进行了扩张，在其顶面设置有使得搬送板S能向腔室2内搬入搬出的开口21。在腔室2的与设置面侧相反的一侧的顶面设置有开口22、开口23。开口22是设置在顶面与预处理部7之间的孔，开口23是供成膜部8设置用的孔。
另外，在腔室2内的成膜部8的底部设置有腔室2内的排气用的通气道24。通气道24上连接有管道25，通过包括未图示的减压泵、阀等的空气压回路，可以实现腔室2内的抽真空。
[搬送体]
如图1及图2的(A)、图2的(B)所示，搬送体3为圆形的板状体的转台。搬送体3通过设置在腔室2外的作为驱动源的马达31而以转轴34为中心进行旋转。
搬送体3上设置有支承孔35。支承孔35是沿搬送体3的周向等间隔地设置在多处的圆形的孔。搬送板S进入支承孔35，由搬送体3的上表面支承搬送板S的凸缘S1。再者，支承孔35的形状只要能支承搬送板S即可，所以不限定于圆形，也可为其他形状例如四边形、多边形、与搬送板S相似的形状等。另外，在搬送板S的搬入、搬出时，搬送体3将支承孔35依序定位至与开口22相向的位置。
[驱动部]
如图2的(A)、图2的(B)所示，驱动部4具有密封部41、施力部42、移送部43。密封部41对应于加载互锁室6加以设置，是在搬入、搬出搬送板S的同时进行开口21的开闭的机构。施力部42为如下机构：在成膜部8进行的成膜时，从搬送体3退开，在预处理部7进行的预处理时，朝与搬送体3进行的循环搬送的方向交叉的方向施力，由此将工件W定位至预处理部7。所述施力部42使搬送板S从搬送体3独立出来而朝与开口22接触分离的方向移动。移送部43是将搬送板S从加载互锁室6移送至搬送体3的机构。
密封部41具有密封体411、轴杆412、驱动机构413。密封体411为圆板形状的构件，在上缘设置有O形圈等密封构件。另外，在密封体411的上表面的中央设置有供搬送板S载置的载置台411a。轴杆412支承密封体411，而且使密封体411沿轴向往复移动。通过轴杆412朝开口21移动，密封体411将密封构件推挤至开口21周围的腔室2的顶板而进行密封。轴杆412以气密方式贯通腔室2的底面，由腔室2外的气缸等驱动机构413加以驱动。
施力部42具有推板421、轴杆422、驱动机构423。推板421为圆板形状的构件，与搬送板S的底面接触分离。推板421设置在从加载互锁室6收取工件W的位置，隔着搬送板S保持工件W。轴杆422支承推板421，而且使推板421沿轴向也就是与搬送体3的面正交的方向往复移动。轴杆422将推板421移动至搬送体3的表面与移送臂431的箍圈431b之间的位置，由此在推板421与移送臂431之间进行搬送板S的交接或收取。通过轴杆422朝开口22移动，推板421使搬送板S接近预处理部7。由此，工件W被收容至能由预处理部7处理的位置。轴杆422以气密方式贯通腔室2的底面，由腔室2外的气缸等驱动机构423加以驱动。轴杆422通过驱动机构423进行升降移动。再者，图2的(A)、图2的(B)以及这之后的附图中，驱动机构413、423是以简化的方式进行展示，但为各轴杆412、422的移动行程得到确保的结构。
移送部43具有移送臂431、转轴432、驱动机构433。如图3所示，在长方形状的板431a的两端设置有箍圈431b，所述箍圈431b在避开密封部41的载置台411a的情况下支承搬送板S的底面。转轴432使移送臂431旋动，由此在密封部41的载置台411a与搬送体3的支承孔35之间移送箍圈431b上支承的搬送板S。转轴432以气密方式贯通腔室2的底面，由腔室2外的马达等驱动机构433加以驱动。
[搬入搬出部]
如图1及图2的(A)、图2的(B)所示，搬入搬出部5经由开口21、在维持腔室2内部的真空的状态下从外部将未处理的工件W搬入腔室2的内部并将处理过的工件W搬出至腔室2的外部。
搬入搬出部5从自前工序往后工序对搬送板S进行搬送的输送机等搬送机构TR上将搭载有未处理的工件W的搬送板S拾起而搬入腔室2内。另外，搬入搬出部5对搭载有在腔室2内完成了处理的工件W的搬送板S进行收取并交给搬送机构TR。
搬入搬出部5具有臂51、保持体52。臂51是在搬送机构TR与腔室2之间在与搬送体3的平面平行的方向上较长的长方体形状的构件。臂51设置成可通过作为驱动源的马达、以与搬送体3的转轴平行的轴为中心、以每次180°的方式间歇性地旋动。
保持体52是设置在臂51的两端、对搬送板S进行保持的圆板状的构件。保持体52具有机械夹盘等保持机构52a，通过保持机构52a来保持工件W。保持机构52a也可为真空夹盘、静电夹盘。保持体52构成为可通过作为驱动源的气缸在与臂51的旋动的轴平行的方向上往复移动。保持体52还作为对开口21进行开闭的盖体发挥功能。即，保持体52具有比开口22大的直径，设置有O形圈等密封构件，通过垫隔密封构件来推挤保持体52，可以将开口21密封。
[加载互锁室]
加载互锁室6包含由对开口21进行密封的保持体52及密封体411围成的空间。腔室2上设置有加载互锁室6的排气及大气开放用的通气道2b。通气道2b作为进行加载互锁室6的抽真空的排气口以及进行真空破除的放气口发挥功能。通气道2b经由未图示的管道连接至包括减压泵、阀等的空气压回路，可以进行加载互锁室6内的抽真空及真空破除的切换。
[预处理部]
预处理部7在已导入工艺气体G的处理空间P内产生等离子体，由此对工件W进行等离子体处理。本实施方式的等离子体处理是提高成膜的密接性的轰击处理。如图2的(B)所示，预处理部7具有容器71和在容器71内产生等离子体的等离子体发生器。等离子体发生器包含筒状电极72、射频(Radio Frequency，RF)电源74、匹配盒75以及导入部76。
容器71是笼罩处理空间P的周围、底部开口的构件。容器71以底部隔开面向腔室2内的搬送体3侧的方式镶嵌在腔室2的与开口22相对应的顶板上。即，预处理部7设置在腔室2的顶面侧。再者，腔室2上，在开口22的上部设置有处理空间P内的排气用的通气道77。通气道77经由管道77a连接至包括未图示的减压泵、阀等的空气压回路，可以进行处理空间P内的排气。
筒状电极72为方筒状，在一端具有开口部72a，另一端闭塞。筒状电极72沿开口部72a面向腔室2的方向设置。在筒状电极72的与开口部72a相反的一端设置有朝外侧伸出的凸缘72b。凸缘72b的外缘以气密方式固定在容器71的内缘。与开口部72a相向的腔室2的开口22设置在呈环状突出的突出部22a的内侧。开口22的内侧构成了进行等离子体处理的处理空间P的一部分。
设定成即便在通过施力部42使得搬送板S接近腔室2的开口22以对工件W进行等离子体处理的情况下，搬送板S也是以不接触的形式覆盖开口22。即，搬送板S的凸缘S1接近到可以通过覆盖开口22来抑制气体从处理空间P泄漏的位置为止，但被定位在与突出部22a不接触的位置。凸缘S1与突出部22a的距离d例如优选为1～5mm。另外，在覆盖开口22的搬送板S与开口22之间形成弯曲的通道。即，突出部22a与凸缘S1的间隙为弯曲的路径。
筒状电极72上连接有施加高频电压的RF电源74。在RF电源74的输出侧连接有作为匹配电路的匹配盒75。匹配盒75使输入侧及输出侧的阻抗相匹配，由此来稳定等离子体的放电。
导入部76向处理空间P导入工艺气体G。导入部76具有与未图示的储气瓶等工艺气体G的供给源连接的管道76a。管道76a连接于工艺气体G的供给源，以气密方式将容器71密封，而且贯通筒状电极72而端部到达处理空间P内。作为工艺气体G，可以采用稀有气体，氩气等较佳。
在这样的预处理部7中，从RF电源74对筒状电极72施加高频电压。由此，处理空间P的工艺气体G被等离子体化，通过产生的自由基、离子等对与处理空间P相向的工件W的表面进行处理。
[成膜部]
成膜部8包含溅镀源和等离子体发生器，所述溅镀源包含靶材81、垫板82等，所述等离子体发生器包含未图示的电源部及导入部。等离子体发生器生成等离子体，使包含成膜材料的靶材81暴露在所述等离子体中。由此，成膜部8进行成膜，即，使等离子体中包含的离子撞击成膜材料，使敲出的微粒沉积在工件W上。本实施方式的成膜部8对通过与靶材81相向的位置的工件W进行溅镀下的成膜。
靶材81是包含成膜材料的板状构件，所述成膜材料沉积在工件W上而成为膜。靶材81隔开设置在搬送体3上载置的搬送板S的搬送路径上。靶材81的表面以与搬送体3上载置的工件W相向的方式保持在腔室2的与开口23相对应的顶板上。垫板82是保持靶材81的支承构件。另外，溅镀源中视需要适当配备有磁铁、冷却机构等。
电源部是从腔室2的外部对靶材81施加高电压的直流(Direct Current，DC)电源或RF电源。导入部向腔室2导入溅镀气体。导入部具有储气瓶等溅镀气体的供给源、管道以及气体导入口，向搬送体3与靶材81之间所形成的空间导入成膜用的溅镀气体。作为溅镀气体，可以采用稀有气体，氩气等较佳。
在这样的成膜部8中，从导入部导入溅镀气体，电源部对靶材81施加高电压。于是，搬送体3与靶材81之间的空间的溅镀气体发生等离子体化，产生离子等活性种。等离子体中的离子与靶材81撞击而敲出成膜材料的微粒。
由搬送体3循环搬送的工件W通过所述空间。在工件W通过空间时，敲出的成膜材料的微粒沉积在工件W上，在工件W上形成由微粒组成的膜。工件W由搬送体3循环搬送而反复通过所述空间，由此进行成膜处理。
如图1所示，以上那样的成膜部8沿圆周方向设置有五个。在各成膜部8之间、预处理部7与成膜部8之间设置有分隔部28。分隔部28将通过成膜部8进行成膜的空间隔开。即，通过成膜部8进行处理的空间被分隔部28隔开，由此抑制成膜材料和气体的扩散。在分隔部28的下端与搬送体3之间形成有可供旋转的搬送体3上的工件W及搬送板S通过的间隔。即，以在分隔部28的下缘与工件W及搬送板S之间产生些许间隙的方式设定分隔部28的高度。再者，各成膜部8的靶材81的材质即成膜材料可不同也可相同。
再者，由分隔部28围成的成膜部8的处理空间还被箱型遮蔽构件83围绕，所述箱型遮蔽构件83开设有靶材81的孔。箱型遮蔽构件83除了在搬送体3的周向上还在径向上抑制成膜材料及溅镀气体朝腔室10内扩散。箱型遮蔽构件83是以环状扇形(annular sector)的板状体为顶板的环状扇型箱，所述板状体与转台即搬送体3的平面平行配置。箱型遮蔽构件83由外周壁、内周壁、侧面壁划定，所述外周壁从环状扇形的顶板的外周弧朝搬送体3延伸，所述内周壁从环状扇形的顶板的内周弧朝搬送体3延伸，所述侧面壁从环状扇形的顶板的沿着半径的边朝搬送体3延伸，与顶板相反的面向搬送体3的面作了开口。在箱型遮蔽构件83的下端与搬送体3之间形成有可供搬送体3上载放的工件W通过的间隔。
[控制装置]
控制装置80是对成膜装置1的各部进行控制的装置。所述控制装置80例如可以包含专用电子电路或者按规定程序进行动作的计算机等。控制装置80的控制内容进行了编程，由可编程逻辑控制器(Programmable Logic Controller，PLC)或中央处理器(CentralProcessing Unit，CPU)等处理装置来执行。
例如，控制装置80通过所述那样的程序对腔室2内的排气、搬入搬出部5进行的搬送板S的搬入搬出、加载互锁室6的排气和大气开放、预处理部7进行的预处理、搬送体3的旋转、驱动部4进行的搬送板S的移动、成膜部8进行的成膜等加以控制。
[动作]
参照所述附图，对通过以上那样的本实施方式下的成膜装置1在工件W上成膜的处理进行说明。再者，本实施方式中，每当通过搬入搬出部5将搬送板S上载置的工件W搬入腔室2内时，通过预处理部7对工件W进行预处理。即，将搭载有预处理过的工件W的搬送板S放在搬送体3的支承孔35内，并使搬送体3旋转以便未保持有搬送板S的空的支承孔35来到开口22下方。继而，将搭载有下一工件W的搬送板S搬入腔室2内来进行预处理。通过重复这一过程，搭载有预处理过的工件W的搬送板S不断被放到搬送体3的支承孔35内。当所有支承孔35内都搭载有搬送板S时，一边使搬送体3旋转一边进行利用成膜部8的成膜处理。
(搬入动作)
首先，对由搬入搬出部5将应进行成膜处理的工件W搬入腔室2内的动作进行说明。如图2的(A)、图2的(B)所示，密封部41的密封体411将开口21密封，腔室2内因空气压回路的排气处理而为真空。另一方面，搬入搬出部5的保持体52朝搬送机构TR下降，由保持机构52a对搭载有未处理的工件W的搬送板S进行保持。保持体52上升，由此将搬送板S从搬送机构TR上拾起。
继而，如图4的(A)所示，臂51旋动，由此将搭载有未处理的工件W的搬送板S置于与开口21相向的位置。如图4的(B)所示，保持体52下降而将开口21密封，同时将搬送板S载置于密封体411的载置台411a上。由此，通过密封体411及保持体52将加载互锁室6密封。
继而，如图5的(A)所示，通过空气压回路从通气道2b进行排气，由此将加载互锁室6设为真空。再者，搬入搬出部5的另一保持体52朝搬送机构TR下降，由保持机构52a对搭载有未处理的工件W的搬送板S进行保持。接着，如图5的(B)所示，密封体411与搬送板S一起朝离开开口21的方向移动。此时，由于开口21被保持体52密封，所以腔室2内得以维持真空。再者，另一保持体52对搭载有未处理的工件W的搬送板S进行保持并上升，由此将搬送板S从搬送机构TR上拾起。
继而，如图6的(A)所示，移送部43的移送臂431旋动，由此将移送臂431的箍圈431b插入搬送板S的下部。当在此状态下如图6的(B)所示那般密封部41的密封体411下降时，载置台411a离开搬送板S的下部，所以搬送板S被箍圈431b支承。
接着，如图7的(A)所示，移送部43的移送臂431旋动，由此使得搬送板S来到搬送体3的支承孔35的上部。当在此状态下如图7的(B)所示那般施力部42的推板421上升时，搬送板S上升至将开口21覆盖的位置为止而停止。
如图8的(A)所示，通过因等离子体而产生的自由基和离子等对搬送板S上载置的工件W进行等离子体处理，所述等离子体是从导入部76向处理空间P内导入工艺气体G并对筒状电极72施加电压而生成。在正在进行这样的等离子体处理的期间内，如图8的(B)所示，密封体411上升而将开口21密封。由此，加载互锁室6以真空状态被密封。
继而，如图9的(A)所示，经由通气道2b供给通风气体，由此破除加载互锁室6内的真空。进而，如图9的(B)所示，保持体52朝离开开口21的方向移动，由此向大气开放加载互锁室6。
如图10的(A)所示，臂51旋动，由此使得保持住搭载有未处理的工件W的搬送板S的保持体52来到与开口21相向的位置。继而，如图10的(B)所示，保持体52下降，将开口21密封，同时将搬送板S载置于密封体411的载置台411a上。由此，通过密封体411及保持体52将加载互锁室6密封。再者，停止预处理部7中的工艺气体G的导入、对筒状电极72的电压的施加，结束等离子体处理。
如图11所示，施力部42的推板421下降，由此使得已完成等离子体处理的搬送板S下降而搭载于搬送体3的支承孔35内。继而，使搬送体3旋动，将未搭载有搬送板S的空的支承孔35定位到预处理部7的下方。其后，重复图5的(A)、图5的(B)～图11的动作，由此在所有支承孔35内搭载搬送板S。
继而，一边使搬送体3旋转一边使搬送体3上搭载的搬送板S以圆周的轨迹循环移动，从而对搬送板S上的工件W进行基于成膜部8的成膜处理。
[效果]
(1)本实施方式的成膜装置1具有：腔室2，可以将内部设为真空；搬送体3，设置在腔室2内，以圆周的轨迹循环搬送工件W；成膜部8，设置在腔室2内，通过溅镀对由搬送体3循环搬送的工件W进行成膜处理；加载互锁室6，在维持腔室2内的真空的状态下从大气空间搬入搬出工件W；以及预处理部7，设置在腔室2的邻接于加载互锁室6的位置，对从加载互锁室6搬入的工件W在与搬送体3隔离的状态下进行预处理。
在这样的本实施方式中，通过在邻接于加载互锁室6、与成膜时使用的搬送体3隔离的位置上进行预处理，能够抑制因来自预处理部7的气体等而对成膜处理造成影响，所以能实现稳定的成膜。
另外，腔室2内的从加载互锁室6出来的搬入位置在以往仅被用于搬入，而通过在此处配置预处理部7，可以将以往用于预处理部7的空间例如作为成膜部8使用而实现有效充分利用。由此，可以增加成膜部8的数量，从而能在一个腔室2内进行更多种类的材料的成膜。
(2)预处理部7设置在腔室2的顶面侧，成膜装置1具有施力部42，所述施力部42在成膜部8进行的成膜时从搬送体3退开，在预处理部7进行的预处理时朝与搬送体3进行的循环搬送的方向交叉的方向施力，由此将工件W定位到预处理部7。
由此，在逐个搬入工件W时，将工件W定位到预处理部7，由此，能在预处理部7中进行单块处理，在搬入已完成的阶段，可以实现成膜部8进行的多块的统一处理。因此，能够充分利用逐个搬入的部位来完成预处理，所以能在整体上提高成膜处理的效率。
(3)施力部42具有推板421、轴杆422以及驱动机构423，所述推板421保持工件W，所述轴杆422支承推板421，所述驱动机构423使轴杆422升降移动，推板421设置在从加载互锁室6收取工件W的位置。
由此，可以通过驱动机构423、经由轴杆422使推板421移动而从加载互锁室6收取工件W，从而使工件W连续地移动至预处理部7。因此，在从加载互锁室6收取工件W后，无须为了移动至预处理部7而变更水平位置，仅靠上升动作便能移动至预处理部7，从而能缩短搬送时间。
(4)在腔室2与预处理部7之间设置有开口22，所述开口22被搭载工件W的搬送板S以不接触的形式覆盖。因此，通过搬送板S来抑制气体从预处理部7流入腔室2内，可以降低对成膜的影响。另外，由于以不接触的形式覆盖开口22，所以不存在像通过接触进行密封的情况那样因滑动而产生的尘屑扩散的情况，对成膜造成影响这一现象得到抑制。
(5)开口22被搬送板S覆盖，由此在预处理部7与腔室2之间形成弯曲的通道。因此，气体不易流入腔室2内，能进一步抑制对成膜的影响。
(6)预处理部7具有处理空间P和等离子体发生器，所述处理空间P供工艺气体G导入，所述等离子体发生器在已导入工艺气体G的处理空间内产生等离子体，由此对工件W的表面进行等离子体处理。由此，能够抑制工艺气体G流入腔室2内、降低对成膜的影响。
[变形例]
本实施方式还考虑如下变形例。
(1)例如，也可如图12所示那般使突出部22a进一步朝工件W的表面突出，由此形成将与开口22的间隙缩窄而且增长了弯曲部分的迷宫结构，从而形成不易发生气体泄漏的结构。
(2)预处理部7也可进行通过加热使工件W的气体解吸的处理。即，也可设为如下结构：如图13所示，在处理空间P内设置加热部78，所述加热部78通过对导入到处理空间P内的工件W进行加热来进行脱气处理，从通气道将因加热而解吸出来的气体排走。作为加热部78，例如使用与电源79连接的加热灯。如此，在将预处理替换成加热的情况下，也能抑制解吸出来的气体流入腔室2内。
再者，也可设为进行等离子体处理和加热处理双方的预处理部7。将等离子体处理室与加热处理室邻接设置，按照加热处理到等离子体处理的顺序进行处理。如此，通过脱气后的工件W，能使等离子体处理、成膜处理变得良好。
[其他实施方式]
以上，对本发明的实施方式及各部的变形例进行了说明，但所述实施方式和各部的变形例是作为一例来提示的，并非意欲限定发明的范围。所述这些新颖的实施方式能以其他各种实施例加以实施，可以在不脱离发明主旨的范围进行各种省略、替换、变更。这些实施方式及其变形包含在发明的范围和主旨内，而且包含在权利要求记载的发明中。

Claims (5)

1.一种成膜装置，其特征在于，具有：
腔室，能够将内部设为真空；
搬送体，设置在所述腔室内，以圆周的轨迹循环搬送工件；
成膜部，设置在所述腔室内，通过溅镀对由所述搬送体循环搬送的所述工件进行成膜处理；
加载互锁室，在维持所述腔室内的真空的状态下从大气空间搬入搬出所述工件；以及
预处理部，设置在所述腔室的邻接于所述加载互锁室的位置，对从所述加载互锁室搬入的所述工件在与所述搬送体隔离的状态下进行预处理，
在所述腔室与所述预处理部之间设置有开口，所述开口被搭载所述工件的搬送板以不接触的形式覆盖，
所述开口被所述搬送板覆盖，由此在所述预处理部与所述腔室之间形成弯曲的通道。
2.根据权利要求1所述的成膜装置，其特征在于，
所述预处理部设置在所述腔室的顶面侧，
所述成膜装置具有施力部，所述施力部在所述成膜部进行的成膜时从所述搬送体退开，在所述预处理部进行的预处理时朝与所述搬送体进行的循环搬送的方向交叉的方向施力，由此将所述工件定位到所述预处理部。
3.根据权利要求2所述的成膜装置，其特征在于，
所述施力部具有：
推板，保持所述工件；
轴杆，支承所述推板；以及
驱动机构，使所述轴杆升降移动，
所述推板设置在从所述加载互锁室收取所述工件的位置。
4.根据权利要求1至3中任一项所述的成膜装置，其特征在于，
所述预处理部具有：
处理空间，供导入工艺气体；以及
等离子体发生器，在已导入所述工艺气体的所述处理空间内产生等离子体，由此对所述工件的表面进行等离子体处理。
5.根据权利要求1至3中任一项所述的成膜装置，其特征在于，所述预处理部具有：
处理空间；以及
加热部，设置在所述处理空间内，对导入到所述处理空间内的所述工件行加热，由此进行脱气处理。
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