JP2005340781A - 近接メニスカスマニホールド - Google Patents
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- A—HUMAN NECESSITIES
- A45—HAND OR TRAVELLING ARTICLES
- A45D—HAIRDRESSING OR SHAVING EQUIPMENT; EQUIPMENT FOR COSMETICS OR COSMETIC TREATMENTS, e.g. FOR MANICURING OR PEDICURING
- A45D8/00—Hair-holding devices; Accessories therefor
- A45D8/14—Hair grips, i.e. elastic single-piece two-limbed grips
- A45D8/16—Hair grips, i.e. elastic single-piece two-limbed grips with additional fastener
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
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- A—HUMAN NECESSITIES
- A45—HAND OR TRAVELLING ARTICLES
- A45D—HAIRDRESSING OR SHAVING EQUIPMENT; EQUIPMENT FOR COSMETICS OR COSMETIC TREATMENTS, e.g. FOR MANICURING OR PEDICURING
- A45D8/00—Hair-holding devices; Accessories therefor
- A45D8/002—Accessories therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/02—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material to surfaces by single means not covered by groups B05C1/00 - B05C7/00, whether or not also using other means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Weting (AREA)
Abstract
【解決手段】 マニホールドキャリア104の移動と、二次マニホールド102の移動と、一次マニホールド106及び二次マニホールド102間での流体の流入及び排出と、流入路並びに排出路を使用した流体の流入及び排出の管理は、流体制御部250によって管理してよい。流体管理部250は、ウェハ処理をモニタし、一次マニホールド106、二次マニホールド102、及びマニホールドキャリア104を使用して要求通りにウェハ108を処理するのに必要となる適切な調整及び移動を実行可能な、任意の適切なソフトウェア及び/又はハードウェアにしてよい。二次マニホールド102は、一次マニホールド106を更に開口部109へ移動させている。
【選択図】 図7
Description
Claims (20)
- 基板処理装置であって、
基板表面上で流体メニスカスを生成するように構成された第一のマニホールドモジュールと、
第一のマニホールドモジュールと接続し、前記流体メニスカスを生成するために前記第一のマニホールドモジュールを前記基板表面に近接する位置へ移動させるように構成された第二のマニホールドモジュールと、
を備える基板処理装置。 - 請求項1記載の基板処理装置であって、更に、
前記第一のマニホールドモジュールを処理対象となる前記基板の領域に移動させるように構成されたマニホールドキャリヤを備える基板処理装置。 - 請求項1記載の基板処理装置であって、
前記接続は、前記第一のマニホールドモジュールに流体を供給し、前記第一のマニホールドモジュールから流体を除去するように構成される、基板処理装置。 - 請求項3記載の基板処理装置であって、
前記第二のマニホールドモジュールは、第一の流体及び第二の流体を前記第一のマニホールドモジュールに供給し、前記第一の流体及び前記第二の流体を前記第一のマニホールドモジュールから除去するように構成される、基板処理装置。 - 請求項4記載の基板処理装置であって、
前記第一のマニホールドモジュールは、第一の流体及び第二の流体を前記基板表面に供給し、前記第一の流体及び前記第二の流体を前記基板表面から除去するように構成される、基板処理装置。 - 請求項1記載の基板処理装置であって、
前記第二のマニホールドモジュールは、前記第一のマニホールドモジュールと接続するために垂直に移動するように構成される、基板処理装置。 - 請求項1記載の基板処理装置であって、
前記流体メニスカスは、被覆、エッチング、乾燥、及び洗浄工程のいずれかを実行する、基板処理装置。 - 請求項2記載の基板処理装置であって、
前記第一のマニホールドモジュールの処理面は、前記マニホールドキャリヤの底面の平面を越えて位置決めされる、基板処理装置。 - 請求項8記載の基板処理装置であって、
前記第一のマニホールドモジュールの処理面は、第一の流体を前記基板表面に供給するための第一のコンジットと、第二の流体を前記基板表面に供給するための第二のコンジットと、前記第一の流体及び前記第二の流体とを前記基板表面から除去するための第三のコンジットと、を備える、基板処理装置。 - 基板処理方法であって、
処理対象となる基板の基板表面の上方に第一のマニホールドモジュールを位置決めするステップと、
前記第一のマニホールドモジュールに第二のマニホールドモジュールを接続するステップと、
前記第一のマニホールドモジュールが前記基板表面に近接するように、前記第二のマニホールドモジュールを移動させるステップと、
前記第二のマニホールドモジュールから流体が供給される前記第一のマニホールドモジュールにより流体メニスカスを生成するステップと、
前記基板表面に前記流体メニスカスを供給してウェハ処理工程を実行するステップと、
を備える方法。 - 請求項10記載の基板処理方法であって、
前記第一のマニホールドモジュールは、前記流体メニスカスを生成するように構成された複数のコンジットを含む、基板処理方法。 - 請求項10記載の基板処理方法であって、
前記第一のマニホールドモジュールを位置決めするステップは、前記第二のマニホールドモジュールが前記第一のモジュールと接続できるように、前記第一のマニホールドモジュールを備えたマニホールドキャリヤを所定の位置に移動させるステップを含む、基板処理方法。 - 請求項10記載の基板処理方法であって、
前記第二のマニホールドモジュールを前記第一のマニホールドモジュールに接続するステップは、前記第一のマニホールドモジュールと前記第二のマニホールドモジュールとの間での流体の転送を容易にするために、前記第一のマニホールドモジュールのポートを前記第二のマニホールドモジュールのポートに結合するステップを含む、基板処理方法。 - 請求項10記載の基板処理方法であって、
前記第一のマニホールドモジュールが前記基板表面に近接するように前記第二のマニホールドモジュールを移動させるステップは、前記第二のマニホールドモジュールが前記第一のマニホールドモジュールへ垂直に移動するステップを含む、基板処理方法。 - 請求項10記載の基板処理方法であって、
前記流体メニスカスを生成するステップは、
第一の流体及び第二の流体を前記第二のマニホールドから前記第一のマニホールドへ転送するステップと、
前記基板に供給された前記第一の流体及び前記第二の流体を前記第一のマニホールドから前記第二のマニホールドへ除去するステップとを含む、基板処理方法。 - 請求項10記載の基板処理方法であって、
前記ウェハ処理工程は、被覆、エッチング、洗浄、及び乾燥工程のいずれかである、基板処理方法。 - 基板処理装置であって、
基板表面に第一の流体を供給するように構成された第一のコンジットと、前記基板表面に第二の流体を供給するための第二のコンジットと、前記基板表面から前記第一の流体及び前記第二の流体を除去するための第三のコンジットとを備える処理面を有し、前記供給及び前記除去を行うことで前記基板表面上に流体メニスカスが生成される第一のマニホールドモジュールと、
前記第一のマニホールドモジュールを前記基板表面に近接する位置へ移動させ、前記第一の流体及び前記第二の流体を前記第一のモジュールに送給し、前記基板に供給された前記第一の流体及び前記第二の流体を前記第一のマニホールドモジュールから除去するように構成された第二のマニホールドモジュールと、
を備える基板処理装置。 - 請求項17記載の基板処理装置であって、
前記第二のマニホールドは、前記第一の流体及び前記第二の流体を前記第一のマニホールドに送給するためのポートを有し、前記第二のマニホールドは、前記基板に供給された前記第一の流体及び前記第二の流体を前記第一のマニホールドから除去するための少なくとも一つのポートを有する、基板処理装置。 - 請求項17記載の基板処理装置であって、
前記第一のマニホールドは、前記第二のマニホールドから前記第一の流体及び前記第二の流体を受領するためのポートを有し、前記第一のマニホールドは、前記基板に供給された前記第一の流体及び前記第二の流体を前記第二のマニホールドモジュールへ送給するための少なくとも一つのポートを有する、基板処理装置。 - 請求項17記載の基板処理装置であって、
前記第一の流体は、エッチング流体、洗浄流体、乾燥流体、及び被覆流体のいずれかであり、前記第二の流体は、前記第一の流体の表面張力を低減するように構成される、基板処理装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/817,133 US7389783B2 (en) | 2002-09-30 | 2004-04-01 | Proximity meniscus manifold |
Publications (2)
Publication Number | Publication Date |
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JP2005340781A true JP2005340781A (ja) | 2005-12-08 |
JP4676230B2 JP4676230B2 (ja) | 2011-04-27 |
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Application Number | Title | Priority Date | Filing Date |
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JP2005100378A Expired - Fee Related JP4676230B2 (ja) | 2004-04-01 | 2005-03-31 | 基板処理装置及び基板処理方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7389783B2 (ja) |
EP (1) | EP1582269B1 (ja) |
JP (1) | JP4676230B2 (ja) |
KR (1) | KR101136772B1 (ja) |
CN (1) | CN100481338C (ja) |
DE (1) | DE602005000450T2 (ja) |
MY (1) | MY137975A (ja) |
SG (1) | SG115838A1 (ja) |
TW (1) | TWI299878B (ja) |
Cited By (3)
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JP2011501434A (ja) * | 2007-10-18 | 2011-01-06 | ラム リサーチ コーポレーション | パターン基板の洗浄を最適化する装置および方法 |
JP2017073522A (ja) * | 2015-10-09 | 2017-04-13 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び記録媒体 |
JP2018174332A (ja) * | 2018-06-06 | 2018-11-08 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び記録媒体 |
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CN1684231A (zh) | 2005-10-19 |
DE602005000450T2 (de) | 2007-12-06 |
US20050139318A1 (en) | 2005-06-30 |
US7389783B2 (en) | 2008-06-24 |
TWI299878B (en) | 2008-08-11 |
TW200603218A (en) | 2006-01-16 |
MY137975A (en) | 2009-04-30 |
KR20060045448A (ko) | 2006-05-17 |
DE602005000450D1 (de) | 2007-03-08 |
EP1582269A1 (en) | 2005-10-05 |
SG115838A1 (en) | 2005-10-28 |
JP4676230B2 (ja) | 2011-04-27 |
EP1582269B1 (en) | 2007-01-17 |
CN100481338C (zh) | 2009-04-22 |
KR101136772B1 (ko) | 2012-04-19 |
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