JP4676230B2 - 基板処理装置及び基板処理方法 - Google Patents
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- JP4676230B2 JP4676230B2 JP2005100378A JP2005100378A JP4676230B2 JP 4676230 B2 JP4676230 B2 JP 4676230B2 JP 2005100378 A JP2005100378 A JP 2005100378A JP 2005100378 A JP2005100378 A JP 2005100378A JP 4676230 B2 JP4676230 B2 JP 4676230B2
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- A—HUMAN NECESSITIES
- A45—HAND OR TRAVELLING ARTICLES
- A45D—HAIRDRESSING OR SHAVING EQUIPMENT; EQUIPMENT FOR COSMETICS OR COSMETIC TREATMENTS, e.g. FOR MANICURING OR PEDICURING
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- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/02—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material to surfaces by single means not covered by groups B05C1/00 - B05C7/00, whether or not also using other means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
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- Microelectronics & Electronic Packaging (AREA)
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- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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Description
Claims (16)
- 基板処理装置であって、
それぞれ基板表面上で流体メニスカスを生成するように構成された異なるタイプの複数の第一のマニホールドと、
前記複数の第一のマニホールドのうちの選択された1つと接続し、前記流体メニスカスを生成するために前記選択された第一のマニホールドを前記基板表面に近接する位置へ移動させるように構成された第二のマニホールドと、
前記複数の第一のマニホールドを収容するとともに、前記選択された第一のマニホールドを、処理対象となる前記基板の領域に移動させるように構成されたマニホールドキャリヤと、
を備え、
前記選択された第一のマニホールドの処理面は、前記マニホールドキャリヤの底面の平面よりも下側に位置決めされ、
前記複数の第一のマニホールドのそれぞれの処理面は、第一の流体を前記基板表面に供給するための第一のコンジットと、第二の流体を前記基板表面に供給するための第二のコンジットと、前記第一の流体及び前記第二の流体とを前記基板表面から除去するための第三のコンジットと、を備える、基板処理装置。 - 請求項1記載の基板処理装置であって、
前記接続は、前記選択された第一のマニホールドに流体を供給し、前記選択された第一のマニホールドから流体を除去するように構成される、基板処理装置。 - 請求項2記載の基板処理装置であって、
前記第二のマニホールドは、第一の流体及び第二の流体を前記選択された第一のマニホールドに供給し、前記第一の流体及び前記第二の流体を前記選択された第一のマニホールドから除去するように構成される、基板処理装置。 - 請求項3記載の基板処理装置であって、
前記複数の第一のマニホールドのそれぞれは、第一の流体及び第二の流体を前記基板表面に供給し、前記第一の流体及び前記第二の流体を前記基板表面から除去するように構成される、基板処理装置。 - 請求項1記載の基板処理装置であって、
前記第二のマニホールドは、前記選択された第一のマニホールドと接続するために垂直に移動するように構成される、基板処理装置。 - 請求項1記載の基板処理装置であって、
前記流体メニスカスは、被覆、エッチング、乾燥、及び洗浄工程のいずれかを実行する、基板処理装置。 - 基板処理方法であって、
処理対象となる基板の基板表面の上方に、異なるタイプの複数の第一のマニホールドのうちの1つを選択して位置決めするステップと、
前記選択された第一のマニホールドに第二のマニホールドを接続するステップと、
前記選択された第一のマニホールドが前記基板表面に近接するように、前記第二のマニホールドを移動させるステップと、
前記第二のマニホールドから流体が供給される前記選択された第一のマニホールドにより流体メニスカスを生成するステップと、
前記基板表面に前記流体メニスカスを供給してウェハ処理工程を実行するステップと、
を備え、
前記選択された第一のマニホールドを位置決めするステップは、前記第二のマニホールドが前記選択された第一のマニホールドと接続できるように、前記複数の第一のマニホールドを備えたマニホールドキャリヤを所定の位置に移動させるステップを含む、基板処理方法。 - 請求項7記載の基板処理方法であって、
前記複数の第一のマニホールドのそれぞれは、前記流体メニスカスを生成するように構成された複数のコンジットを含む、基板処理方法。 - 請求項7記載の基板処理方法であって、
前記第二のマニホールドを前記選択された第一のマニホールドに接続するステップは、前記選択された第一のマニホールドと前記第二のマニホールドとの間での流体の転送を容易にするために、前記選択された第一のマニホールドのポートを前記第二のマニホールドのポートに結合するステップを含む、基板処理方法。 - 請求項7記載の基板処理方法であって、
前記選択された第一のマニホールドが前記基板表面に近接するように前記第二のマニホールドを移動させるステップは、前記第二のマニホールドが前記選択された第一のマニホールドへ垂直に移動するステップを含む、基板処理方法。 - 請求項7記載の基板処理方法であって、
前記流体メニスカスを生成するステップは、
第一の流体及び第二の流体を前記第二のマニホールドから前記選択された第一のマニホールドへ転送するステップと、
前記基板に供給された前記第一の流体及び前記第二の流体を前記選択された第一のマニホールドから前記第二のマニホールドへ除去するステップとを含む、基板処理方法。 - 請求項7記載の基板処理方法であって、
前記ウェハ処理工程は、被覆、エッチング、洗浄、及び乾燥工程のいずれかである、基板処理方法。 - 基板処理装置であって、
基板表面に第一の流体を供給するように構成された第一のコンジットと、前記基板表面に第二の流体を供給するための第二のコンジットと、前記基板表面から前記第一の流体及び前記第二の流体を除去するための第三のコンジットとを備える処理面を有し、前記供給及び前記除去を行うことで前記基板表面上に流体メニスカスが生成される第一のマニホールドであって、異なるタイプの複数の第一のマニホールドと、
前記複数の第一のマニホールドのうちの選択された1つを前記基板表面に近接する位置へ移動させ、前記第一の流体及び前記第二の流体を前記選択された第一のマニホールドに送給し、前記基板に供給された前記第一の流体及び前記第二の流体を前記選択された第一のマニホールドから除去するように構成された第二のマニホールドと、
前記選択された第一のマニホールドを処理対象となる前記基板の領域に移動させるように構成されたマニホールドキャリヤと、
を備え、
前記選択された第一のマニホールドの処理面は、前記マニホールドキャリヤの底面の平面よりも下側に位置決めされる、基板処理装置。 - 請求項13記載の基板処理装置であって、
前記第二のマニホールドは、前記第一の流体及び前記第二の流体を前記選択された第一のマニホールドに送給するためのポートを有し、前記第二のマニホールドは、前記基板に供給された前記第一の流体及び前記第二の流体を前記選択された第一のマニホールドから除去するための少なくとも一つのポートを有する、基板処理装置。 - 請求項13記載の基板処理装置であって、
前記複数の第一のマニホールドのそれぞれは、前記第二のマニホールドから前記第一の流体及び前記第二の流体を受領するためのポートを有し、前記複数の第一のマニホールドのそれぞれは、前記基板に供給された前記第一の流体及び前記第二の流体を前記第二のマニホールドへ送給するための少なくとも一つのポートを有する、基板処理装置。 - 請求項13記載の基板処理装置であって、
前記第一の流体は、エッチング流体、洗浄流体、乾燥流体、及び被覆流体のいずれかであり、前記第二の流体は、前記第一の流体の表面張力を低減するように構成される、基板処理装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US10/817,133 US7389783B2 (en) | 2002-09-30 | 2004-04-01 | Proximity meniscus manifold |
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JP2005340781A JP2005340781A (ja) | 2005-12-08 |
JP4676230B2 true JP4676230B2 (ja) | 2011-04-27 |
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US (1) | US7389783B2 (ja) |
EP (1) | EP1582269B1 (ja) |
JP (1) | JP4676230B2 (ja) |
KR (1) | KR101136772B1 (ja) |
CN (1) | CN100481338C (ja) |
DE (1) | DE602005000450T2 (ja) |
MY (1) | MY137975A (ja) |
SG (1) | SG115838A1 (ja) |
TW (1) | TWI299878B (ja) |
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CN1684231A (zh) | 2005-10-19 |
SG115838A1 (en) | 2005-10-28 |
MY137975A (en) | 2009-04-30 |
US20050139318A1 (en) | 2005-06-30 |
JP2005340781A (ja) | 2005-12-08 |
KR20060045448A (ko) | 2006-05-17 |
DE602005000450D1 (de) | 2007-03-08 |
US7389783B2 (en) | 2008-06-24 |
EP1582269A1 (en) | 2005-10-05 |
EP1582269B1 (en) | 2007-01-17 |
KR101136772B1 (ko) | 2012-04-19 |
TW200603218A (en) | 2006-01-16 |
TWI299878B (en) | 2008-08-11 |
CN100481338C (zh) | 2009-04-22 |
DE602005000450T2 (de) | 2007-12-06 |
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