JP2005327818A - 電子部品及びその製造方法 - Google Patents
電子部品及びその製造方法 Download PDFInfo
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- JP2005327818A JP2005327818A JP2004142802A JP2004142802A JP2005327818A JP 2005327818 A JP2005327818 A JP 2005327818A JP 2004142802 A JP2004142802 A JP 2004142802A JP 2004142802 A JP2004142802 A JP 2004142802A JP 2005327818 A JP2005327818 A JP 2005327818A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000000853 adhesive Substances 0.000 claims abstract description 120
- 230000001070 adhesive effect Effects 0.000 claims abstract description 119
- 239000000463 material Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims description 76
- 239000004065 semiconductor Substances 0.000 claims description 41
- 230000003287 optical effect Effects 0.000 claims description 39
- 239000000919 ceramic Substances 0.000 claims description 28
- 239000004020 conductor Substances 0.000 claims description 28
- 229920002050 silicone resin Polymers 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000007789 sealing Methods 0.000 abstract description 16
- 230000000903 blocking effect Effects 0.000 abstract description 6
- 238000006073 displacement reaction Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 46
- 239000011521 glass Substances 0.000 description 32
- 238000010521 absorption reaction Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000005476 soldering Methods 0.000 description 7
- 239000003550 marker Substances 0.000 description 6
- 230000000149 penetrating effect Effects 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 229920006332 epoxy adhesive Polymers 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000005553 drilling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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Abstract
【解決手段】 上述の電子部品は、凹部15の底面から裏面11backにまで延びた貫通孔41(43)を有するベース部材1と、凹部15内に搭載された電子素子4と、凹部15の開口部を閉塞する蓋部材2と、蓋部材2と凹部15の開口端面との間に介在すると共に、貫通孔41(43)を閉塞させ、凹部内空間を密閉状態にする接着剤3(42)とを備え、接着剤3(42)は、蓋部材2とベース部材1との間を閉塞し、製造時には閉塞を阻害する空気を逃がすように凹部15の底面から裏面11backに抜けた貫通孔41(43)も、かかる接着剤3(42)によって最終的には閉塞されている。このように、空気による接着剤3(42)の接着阻害が抑制されるため、位置ズレ及び接着不良が抑制されると共に、接着剤による閉塞によって凹部内の密閉性が従来よりも向上する。特に複数凹部を有する材料の場合に顕著である。
【選択図】 図1
Description
第10に、図1及び図3に示すように、凹部15の底面上に設けられ電子素子4に電気的に接続された上層電極パッド21A,21B,21C,21Eと、ベース部材1の裏面11backに設けられた裏面電極端子25A,25B,25C,25Eとを備え、上層電極パッド21A,21B,21C,21Eと裏面電極端子25A,25B,25C,25Eとは、ベース部材1の中に位置する導電体23A,23B,23C,23Eを介して電気的に接続されても良い。この場合、これらの導電体は、凹部15の底面を規定する外縁OL(図2参照)よりも外側に位置している。
Claims (12)
- 凹部の底面から裏面にまで延びた貫通孔を有するベース部材と、
前記凹部内に搭載された電子素子と、
前記凹部の開口部を閉塞する蓋部材と、
前記蓋部材と前記凹部の開口端面との間に介在すると共に、前記貫通孔を閉塞させ、前記凹部内空間を密閉状態にする接着剤と、
を備えることを特徴とする電子部品。 - 前記貫通孔の前記凹部側の開口は、前記凹部内壁の近傍に位置することを特徴とする請求項1に記載の電子部品。
- 前記凹部の底面は多角形であり、
前記貫通孔の前記凹部側の開口は、前記底面の頂点位置の近傍に位置することを特徴とする請求項2に記載の電子部品。 - 前記接着剤は前記蓋部材と前記開口端面との間の領域から、前記凹部内壁に沿って垂れて前記貫通孔内の領域まで連続していることを特徴とする請求項1乃至3のいずれか1項に記載の電子部品。
- 前記凹部の底面は、
前記電子素子がダイボンドされる下側底面と、
前記下側底面の周囲に位置し、この下側底面よりも前記蓋部材に近接し、この下側底面との境界が段差を形成する上側底面と、
を有し、
前記貫通孔は、前記上側底面から前記ベース部材の裏面にまで延びており、
前記貫通孔の前記裏面側の開口の径は、前記凹部側の開口の径よりも大きいことを特徴とする請求項1乃至4のいずれか1項に記載の電子部品。 - 前記電子素子は光半導体素子であり、
前記蓋部材は前記光半導体素子に対応する主要光成分を透過する材料からなり、
前記ベース部材は透過特性が前記蓋部材とは異なる材料からなる、
ことを特徴とする請求項1乃至5のいずれか1項に記載の電子部品。 - 前記接着剤は、常温硬化型のシリコーン樹脂からなる接着剤であることを特徴とする請求項1乃至6のいずれか1項に記載の電子部品。
- 前記ベース部材は、セラミック製であることを特徴とする請求項1乃至請求項7のいずれか1項に記載の電子部品。
- 前記凹部の底面上に設けられ前記電子素子に電気的に接続された上層電極パッドと、
前記ベース部材の裏面に設けられた裏面電極端子と、
を備え、
前記上層電極パッドと前記裏面電極端子とは、前記ベース部材の側方に位置する凹面上の導電体を介して電気的に接続され、前記凹面の最深部は、前記凹部の底面を規定する外縁よりも外側に位置することを特徴とする請求項1乃至請求項8のいずれか1項に記載の電子部品。 - 前記凹部の底面上に設けられ前記電子素子に電気的に接続された上層電極パッドと、
前記ベース部材の裏面に設けられた裏面電極端子と、
を備え、
前記上層電極パッドと前記裏面電極端子とは、前記ベース部材の中に位置する導電体を介して電気的に接続され、前記導電体は、前記凹部の底面を規定する外縁よりも外側に位置することを特徴とする請求項1乃至請求項8のいずれか1項に記載の電子部品。 - 凹部の内壁近傍の底面に少なくとも一つの貫通孔が形成されたベース部材における前記凹部に電子素子を搭載する第一工程と、
蓋部材を、常温で硬化する接着剤によって前記ベース部材に接着して、前記ベース部材における前記凹部の開口部を蓋部材で閉塞する第二工程と、
を含むことを特徴とする電子部品の製造方法。 - 前記第一工程は、
複数の凹部が同一面に形成されたシート基板を用意する工程と、
これら複数の凹部のそれぞれに対して電子素子を搭載する工程と、
を有し、
前記第二工程は、
常温硬化型の接着剤を前記凹部の開口端面上に塗布する工程と、
前記シート基板とシート蓋部材とを前記接着剤で貼り合わせ、前記接着剤が、それぞれの前記凹部の底面から延びた少なくとも一つの前記貫通孔内に、凹部内壁を伝って流入することで、前記貫通孔を閉塞し、前記凹部内空間が密閉状態となる複合シートを形成する工程と、
を有し、
前記シート基板、前記シート蓋部材及び前記接着剤からなる前記複合シートを、前記凹部間の領域上に設定されたダイシングラインに沿って切断することで分離する工程を備え、この切断によって、それぞれの前記ベース部材と前記蓋部材が貼り合わせられてなる電子部品が複数得られることを特徴とする請求項11に記載の電子部品の製造方法。
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JP2004142802A JP4598432B2 (ja) | 2004-05-12 | 2004-05-12 | 電子部品及びその製造方法 |
PCT/JP2005/008308 WO2005109528A1 (ja) | 2004-05-12 | 2005-05-02 | 電子部品及びその製造方法 |
US11/596,055 US20070284714A1 (en) | 2004-05-12 | 2005-05-02 | Electronic Part And Method Of Producing The Same |
DE112005001067T DE112005001067T5 (de) | 2004-05-12 | 2005-05-02 | Elektronikteil und Verfahren zu dessen Herstellung |
CNB2005800151208A CN100521256C (zh) | 2004-05-12 | 2005-05-02 | 电子部件及其制造方法 |
TW094115092A TW200603226A (en) | 2004-05-12 | 2005-05-10 | Electronic part and its manufacturing method |
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JP (1) | JP4598432B2 (ja) |
CN (1) | CN100521256C (ja) |
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Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4466860B2 (ja) * | 2005-05-17 | 2010-05-26 | 横河電機株式会社 | 受光モジュール |
EP1949770B1 (en) * | 2005-11-09 | 2018-12-12 | Koninklijke Philips N.V. | Method of manufacturing a package carrier for enclosing at least one microelectronic element and method of manufacturing a diagnostic device |
JP2008182103A (ja) * | 2007-01-25 | 2008-08-07 | Olympus Corp | 気密封止パッケージ |
US8508036B2 (en) * | 2007-05-11 | 2013-08-13 | Tessera, Inc. | Ultra-thin near-hermetic package based on rainier |
DE102008025491A1 (de) * | 2008-05-28 | 2009-12-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Leiterplatte |
JP2011018863A (ja) * | 2009-07-10 | 2011-01-27 | Sharp Corp | 発光素子モジュール及びその製造方法、並びに、バックライト装置 |
GB2477492B (en) * | 2010-01-27 | 2014-04-09 | Thales Holdings Uk Plc | Integrated circuit package |
JP4947169B2 (ja) * | 2010-03-10 | 2012-06-06 | オムロン株式会社 | 半導体装置及びマイクロフォン |
WO2012155984A1 (de) * | 2011-05-19 | 2012-11-22 | Osram Opto Semiconductors Gmbh | Optoelektronische vorrichtung und verfahren zur herstellung von optoelektronischen vorrichtungen |
US9917118B2 (en) * | 2011-09-09 | 2018-03-13 | Zecotek Imaging Systems Pte. Ltd. | Photodetector array and method of manufacture |
US9197796B2 (en) | 2011-11-23 | 2015-11-24 | Lg Innotek Co., Ltd. | Camera module |
DE102012220323A1 (de) * | 2012-11-08 | 2014-05-08 | Robert Bosch Gmbh | Bauteil und Verfahren zu dessen Herstellung |
WO2014189221A1 (ko) * | 2013-05-23 | 2014-11-27 | 엘지이노텍주식회사 | 발광 모듈 |
KR20150004118A (ko) * | 2013-07-02 | 2015-01-12 | 삼성디스플레이 주식회사 | 표시 장치용 기판, 상기 표시 장치용 기판의 제조 방법, 및 상기 표시 장치용 기판을 포함하는 표시 장치 |
FR3066643B1 (fr) * | 2017-05-16 | 2020-03-13 | Stmicroelectronics (Grenoble 2) Sas | Boitier electronique pourvu d'une fente locale formant un event |
JP7231809B2 (ja) * | 2018-06-05 | 2023-03-02 | 日亜化学工業株式会社 | 発光装置 |
JP2020129629A (ja) * | 2019-02-12 | 2020-08-27 | エイブリック株式会社 | 光センサ装置およびその製造方法 |
US11823991B2 (en) * | 2021-03-26 | 2023-11-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Frames stacked on substrate encircling devices and manufacturing method thereof |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5343477A (en) * | 1976-09-30 | 1978-04-19 | Nec Corp | Semiconductor device |
JPS5623755A (en) * | 1979-08-01 | 1981-03-06 | Hitachi Ltd | Assembly of semiconductor device |
JPS58106956U (ja) * | 1982-01-18 | 1983-07-21 | 沖電気工業株式会社 | 収納容器 |
JPH01179437A (ja) * | 1988-01-07 | 1989-07-17 | Sony Corp | 半導体装置 |
JPH01244651A (ja) * | 1988-03-26 | 1989-09-29 | Nec Corp | セラミックパッケージ型半導体装置 |
JPH04324959A (ja) * | 1991-04-25 | 1992-11-13 | Hitachi Ltd | キャップ封止半導体装置とその組立方法 |
JPH05283549A (ja) * | 1992-03-31 | 1993-10-29 | Toshiba Corp | ガラス封止型セラミック容器の製造方法 |
JPH09121000A (ja) * | 1995-10-25 | 1997-05-06 | Nec Corp | 半導体装置とその製造方法 |
JP2000150844A (ja) * | 1998-11-10 | 2000-05-30 | Sony Corp | 固体撮像装置の製造方法 |
JP2003283287A (ja) * | 2002-03-25 | 2003-10-03 | Seiko Epson Corp | 圧電デバイスとその孔封止方法及び孔封止装置並びに圧電デバイスを利用した携帯電話装置及び圧電デバイスを利用した電子機器 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3507251B2 (ja) * | 1995-09-01 | 2004-03-15 | キヤノン株式会社 | 光センサicパッケージおよびその組立方法 |
US6428650B1 (en) * | 1998-06-23 | 2002-08-06 | Amerasia International Technology, Inc. | Cover for an optical device and method for making same |
US6307447B1 (en) * | 1999-11-01 | 2001-10-23 | Agere Systems Guardian Corp. | Tuning mechanical resonators for electrical filter |
-
2004
- 2004-05-12 JP JP2004142802A patent/JP4598432B2/ja not_active Expired - Lifetime
-
2005
- 2005-05-02 WO PCT/JP2005/008308 patent/WO2005109528A1/ja active Application Filing
- 2005-05-02 US US11/596,055 patent/US20070284714A1/en not_active Abandoned
- 2005-05-02 DE DE112005001067T patent/DE112005001067T5/de not_active Withdrawn
- 2005-05-02 CN CNB2005800151208A patent/CN100521256C/zh not_active Expired - Fee Related
- 2005-05-10 TW TW094115092A patent/TW200603226A/zh unknown
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5343477A (en) * | 1976-09-30 | 1978-04-19 | Nec Corp | Semiconductor device |
JPS5623755A (en) * | 1979-08-01 | 1981-03-06 | Hitachi Ltd | Assembly of semiconductor device |
JPS58106956U (ja) * | 1982-01-18 | 1983-07-21 | 沖電気工業株式会社 | 収納容器 |
JPH01179437A (ja) * | 1988-01-07 | 1989-07-17 | Sony Corp | 半導体装置 |
JPH01244651A (ja) * | 1988-03-26 | 1989-09-29 | Nec Corp | セラミックパッケージ型半導体装置 |
JPH04324959A (ja) * | 1991-04-25 | 1992-11-13 | Hitachi Ltd | キャップ封止半導体装置とその組立方法 |
JPH05283549A (ja) * | 1992-03-31 | 1993-10-29 | Toshiba Corp | ガラス封止型セラミック容器の製造方法 |
JPH09121000A (ja) * | 1995-10-25 | 1997-05-06 | Nec Corp | 半導体装置とその製造方法 |
JP2000150844A (ja) * | 1998-11-10 | 2000-05-30 | Sony Corp | 固体撮像装置の製造方法 |
JP2003283287A (ja) * | 2002-03-25 | 2003-10-03 | Seiko Epson Corp | 圧電デバイスとその孔封止方法及び孔封止装置並びに圧電デバイスを利用した携帯電話装置及び圧電デバイスを利用した電子機器 |
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CN1954443A (zh) | 2007-04-25 |
TW200603226A (en) | 2006-01-16 |
DE112005001067T5 (de) | 2007-04-12 |
WO2005109528A1 (ja) | 2005-11-17 |
JP4598432B2 (ja) | 2010-12-15 |
CN100521256C (zh) | 2009-07-29 |
US20070284714A1 (en) | 2007-12-13 |
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