JP2005167294A - Dmosトランジスタ及びその製造方法 - Google Patents
Dmosトランジスタ及びその製造方法 Download PDFInfo
- Publication number
- JP2005167294A JP2005167294A JP2005071113A JP2005071113A JP2005167294A JP 2005167294 A JP2005167294 A JP 2005167294A JP 2005071113 A JP2005071113 A JP 2005071113A JP 2005071113 A JP2005071113 A JP 2005071113A JP 2005167294 A JP2005167294 A JP 2005167294A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- body region
- main surface
- dmos transistor
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title description 16
- 210000000746 body region Anatomy 0.000 claims description 62
- 239000002019 doping agent Substances 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 23
- 229910052785 arsenic Inorganic materials 0.000 description 24
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 24
- 238000009792 diffusion process Methods 0.000 description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 11
- 230000001133 acceleration Effects 0.000 description 9
- 238000002513 implantation Methods 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/0869—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/103—Mask, dual function, e.g. diffusion and oxidation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/965—Shaped junction formation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】 基層の主面から延出する第2の導電型のボディ領域を形成する過程と、マスクによって横方向に画定され、かつ前記主面から前記ボディ領域よりも浅く延出するより高いドーピング濃度を備えた第1の導電型のソース領域を形成する過程と、前記マスクによって横方向に画定され、かつ前記主面から前記ボディ領域よりも深く延出する少なくとも1つの溝を前記基層内に形成する過程と、前記主面から前記ボディ領域よりも浅く延出し、かつ前記溝の片側の前記基層の前記主面に沿って横方向に前記ソース領域を延在させることによって、前記ソース領域を再び形成する過程とを有する。
【選択図】 図8
Description
2 基層
3 Pボディ領域
3a Pボディ領域
4 マスク層
5 N+ソース領域
6 溝
6a ゲート酸化層
6b ポリシリコン
7 P+高濃度のボディ領域
8 ソース領域の延出部
9 金属接続層
10 酸化膜絶縁層
20 N+基層
22 N−エピタキシャル層
24 酸化膜マスク層
26 Pタブ
30 溝酸化膜マスク層
32 Nソース領域
36 ゲート酸化膜
38 ポリシリコン
42 Pボディ領域
44 N+ソース拡張領域
50 N+ソース拡張領域
54 酸化膜絶縁層
56 金属化層
61 エピタキシャル層
62 基層
63 ボディ領域
63a Pボディ領域
65 ソース領域
66 ゲート酸化膜絶縁層
66a 溝
67 ソース接触部
69 ゲート電極
98 ドレイン接触部
Claims (11)
- DMOSトランジスタであって、
導電性のゲート電極を含む溝を画定する第1の導電型の基層と、
前記溝に隣接する前記基層の第1主面から前記基層内に、前記溝の深さよりも浅く延出する第2の導電型のボディ領域と、
前記基層内に形成された前記第1の導電型のソース領域とを備え、
前記溝の近傍の前記ボディ領域の部分が、前記溝から離れた前記ボディ領域の他の部分よりも前記主面から浅く延出し、かつ前記溝の近傍の前記ボディ領域とエピタキシャル層との境界部分が傾斜することによって、前記溝の近傍の前記境界部分の一部が前記主面により接近していることを特徴とするDMOSトランジスタ。 - 前記ソース領域が前記溝に隣接する前記主面から前記ボディ領域の深さよりも浅く前記基層内に延出し、前記ソース領域が前記主面から前記溝と隣接する部分ではより深く延出し、前記溝から離れた部分ではより浅く延出することを特徴とする請求項1に記載のDMOSトランジスタ。
- 前記ソース領域が、前記主面から前記溝に隣接した部分ではより深く延出し、前記溝から離れた部分ではより浅く延出することを特徴とする請求項1に記載のDMOSトランジスタ。
- 前記ボディ領域が、前記溝に隣接した部分では前記主面から浅く延出し、前記溝から離れた部分では深く延出することを特徴とする請求項1に記載のDMOSトランジスタ。
- 前記溝から離れて配置され、かつ前記ボディ領域内に概ね形成されると共に前記基層の前記主面から延出する、前記ボディ領域よりも高い不純物濃度を備えた前記第2の導電型の高濃度ボディ領域を更に有することを特徴とする請求項1に記載のDMOSトランジスタ。
- DMOSトランジスタであって、
導電性のゲート電極を含む溝を画定する第1の導電型の基層と、
前記基層内の前記溝に隣接する前記基層の主面から、前記溝の深さよりも浅く延出する第2の導電型のボディ領域と、
前記溝に隣接する前記主面から前記ボディ領域の深さよりも浅く前記基層内に延出する前記基層内に形成された前記第1の導電型のソース領域とを有し、
前記溝に隣接する前記ボディ領域の部分が、前記溝から離れた前記ボディ領域の他の部分よりも前記主面から浅く延出し、
前記ソース領域が前記溝と隣接する部分では前記主面から深く延出し、前記溝から離れた部分では浅く延出することを特徴とするDMOSトランジスタ。 - 前記溝を形成する前に、前記主面を通してマスクによって画定された前記ソース領域の一部を前記ボディ領域内に注入しかつ横方向に拡散することによって、前記ソース領域の一部と前記基層との間の前記ボディ領域の一部の厚さを減少させ、前記厚さの減少した前記ボディ領域の前記一部が短チャネルを画定することを特徴とする請求項1に記載のDMOSトランジスタ。
- 前記マスクが前記溝をエッチングするために用いられることを特徴とする請求項7に記載のDMOSトランジスタ。
- 前記溝が前記主面から前記ボディ領域よりも深く延出することを特徴とする請求項7に記載のDMOSトランジスタ。
- 前記ソース領域の前記一部が、前記溝の片側の前記主面に沿って横方向に浅く延出し、前記ソース領域を形成することを特徴とする請求項7に記載のDMOSトランジスタ。
- 高いドーズ量のドーパントが、注入かつ拡散されて前記ソース領域の前記一部の前記浅い延出部を形成することを特徴とする請求項10に記載のDMOSトランジスタ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/031,798 US5341011A (en) | 1993-03-15 | 1993-03-15 | Short channel trenched DMOS transistor |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP07165094A Division JP3677304B2 (ja) | 1993-03-15 | 1994-03-15 | Dmosトランジスタの形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005167294A true JP2005167294A (ja) | 2005-06-23 |
Family
ID=21861454
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP07165094A Expired - Lifetime JP3677304B2 (ja) | 1993-03-15 | 1994-03-15 | Dmosトランジスタの形成方法 |
JP2005071113A Pending JP2005167294A (ja) | 1993-03-15 | 2005-03-14 | Dmosトランジスタ及びその製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP07165094A Expired - Lifetime JP3677304B2 (ja) | 1993-03-15 | 1994-03-15 | Dmosトランジスタの形成方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US5341011A (ja) |
EP (1) | EP0616372B1 (ja) |
JP (2) | JP3677304B2 (ja) |
DE (2) | DE69430768T2 (ja) |
SG (1) | SG52400A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008218711A (ja) * | 2007-03-05 | 2008-09-18 | Renesas Technology Corp | 半導体装置およびその製造方法、ならびに電源装置 |
JP2010098326A (ja) * | 2009-12-21 | 2010-04-30 | Renesas Technology Corp | 半導体装置およびその製造方法、ならびに電源装置 |
Families Citing this family (96)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5558313A (en) * | 1992-07-24 | 1996-09-24 | Siliconix Inorporated | Trench field effect transistor with reduced punch-through susceptibility and low RDSon |
US5910669A (en) * | 1992-07-24 | 1999-06-08 | Siliconix Incorporated | Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof |
DE69429018T2 (de) * | 1993-01-12 | 2002-06-13 | Sony Corp | Ausgangsschaltung für Ladungsübertragungselement |
US5410170A (en) * | 1993-04-14 | 1995-04-25 | Siliconix Incorporated | DMOS power transistors with reduced number of contacts using integrated body-source connections |
EP0698919B1 (en) * | 1994-08-15 | 2002-01-16 | Siliconix Incorporated | Trenched DMOS transistor fabrication using seven masks |
US5869864A (en) * | 1994-10-04 | 1999-02-09 | Siemens Aktiengesellschaft | Field effect controlled semiconductor component |
US5688725A (en) * | 1994-12-30 | 1997-11-18 | Siliconix Incorporated | Method of making a trench mosfet with heavily doped delta layer to provide low on-resistance |
US6008520A (en) * | 1994-12-30 | 1999-12-28 | Siliconix Incorporated | Trench MOSFET with heavily doped delta layer to provide low on- resistance |
US5674766A (en) * | 1994-12-30 | 1997-10-07 | Siliconix Incorporated | Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer |
US5597765A (en) * | 1995-01-10 | 1997-01-28 | Siliconix Incorporated | Method for making termination structure for power MOSFET |
DE69602114T2 (de) * | 1995-02-10 | 1999-08-19 | Siliconix Inc | Graben-Feldeffekttransistor mit PN-Verarmungsschicht-Barriere |
US5567634A (en) * | 1995-05-01 | 1996-10-22 | National Semiconductor Corporation | Method of fabricating self-aligned contact trench DMOS transistors |
US5648670A (en) * | 1995-06-07 | 1997-07-15 | Sgs-Thomson Microelectronics, Inc. | Trench MOS-gated device with a minimum number of masks |
JPH0955496A (ja) * | 1995-08-17 | 1997-02-25 | Oki Electric Ind Co Ltd | 高耐圧mosトランジスタ及びその製造方法 |
US5689128A (en) * | 1995-08-21 | 1997-11-18 | Siliconix Incorporated | High density trenched DMOS transistor |
AU6722396A (en) * | 1995-08-21 | 1997-03-12 | Siliconix Incorporated | Low voltage short channel trench dmos transistor |
US5629543A (en) * | 1995-08-21 | 1997-05-13 | Siliconix Incorporated | Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness |
JP3279151B2 (ja) * | 1995-10-23 | 2002-04-30 | トヨタ自動車株式会社 | 半導体装置及びその製造方法 |
US5721148A (en) * | 1995-12-07 | 1998-02-24 | Fuji Electric Co. | Method for manufacturing MOS type semiconductor device |
US5821583A (en) * | 1996-03-06 | 1998-10-13 | Siliconix Incorporated | Trenched DMOS transistor with lightly doped tub |
US5872374A (en) * | 1996-03-29 | 1999-02-16 | Motorola, Inc. | Vertical semiconductor device |
US5904525A (en) * | 1996-05-08 | 1999-05-18 | Siliconix Incorporated | Fabrication of high-density trench DMOS using sidewall spacers |
WO1998004004A1 (en) * | 1996-07-19 | 1998-01-29 | Siliconix Incorporated | High density trench dmos transistor with trench bottom implant |
WO1998012741A1 (en) * | 1996-09-18 | 1998-03-26 | Advanced Micro Devices, Inc. | Short channel non-self aligned vmos field effect transistor |
US5808340A (en) * | 1996-09-18 | 1998-09-15 | Advanced Micro Devices, Inc. | Short channel self aligned VMOS field effect transistor |
US5693547A (en) * | 1996-10-22 | 1997-12-02 | Advanced Micro Devices, Inc. | Method of making vertical MOSFET with sub-trench source contact |
KR100218260B1 (ko) * | 1997-01-14 | 1999-09-01 | 김덕중 | 트랜치 게이트형 모스트랜지스터의 제조방법 |
JP3938964B2 (ja) * | 1997-02-10 | 2007-06-27 | 三菱電機株式会社 | 高耐圧半導体装置およびその製造方法 |
KR100225409B1 (ko) * | 1997-03-27 | 1999-10-15 | 김덕중 | 트렌치 디-모오스 및 그의 제조 방법 |
US6103635A (en) * | 1997-10-28 | 2000-08-15 | Fairchild Semiconductor Corp. | Trench forming process and integrated circuit device including a trench |
US6429481B1 (en) * | 1997-11-14 | 2002-08-06 | Fairchild Semiconductor Corporation | Field effect transistor and method of its manufacture |
US6492232B1 (en) | 1998-06-15 | 2002-12-10 | Motorola, Inc. | Method of manufacturing vertical semiconductor device |
US6198127B1 (en) * | 1999-05-19 | 2001-03-06 | Intersil Corporation | MOS-gated power device having extended trench and doping zone and process for forming same |
US6274905B1 (en) | 1999-06-30 | 2001-08-14 | Fairchild Semiconductor Corporation | Trench structure substantially filled with high-conductivity material |
US6461918B1 (en) | 1999-12-20 | 2002-10-08 | Fairchild Semiconductor Corporation | Power MOS device with improved gate charge performance |
US7745289B2 (en) | 2000-08-16 | 2010-06-29 | Fairchild Semiconductor Corporation | Method of forming a FET having ultra-low on-resistance and low gate charge |
JP2002110978A (ja) * | 2000-10-02 | 2002-04-12 | Toshiba Corp | 電力用半導体素子 |
US6468870B1 (en) | 2000-12-26 | 2002-10-22 | Taiwan Semiconductor Manufacturing Company | Method of fabricating a LDMOS transistor |
US6710403B2 (en) | 2002-07-30 | 2004-03-23 | Fairchild Semiconductor Corporation | Dual trench power MOSFET |
US7345342B2 (en) | 2001-01-30 | 2008-03-18 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US6818513B2 (en) | 2001-01-30 | 2004-11-16 | Fairchild Semiconductor Corporation | Method of forming a field effect transistor having a lateral depletion structure |
US7132712B2 (en) | 2002-11-05 | 2006-11-07 | Fairchild Semiconductor Corporation | Trench structure having one or more diodes embedded therein adjacent a PN junction |
US6916745B2 (en) | 2003-05-20 | 2005-07-12 | Fairchild Semiconductor Corporation | Structure and method for forming a trench MOSFET having self-aligned features |
US6677641B2 (en) | 2001-10-17 | 2004-01-13 | Fairchild Semiconductor Corporation | Semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
US6803626B2 (en) | 2002-07-18 | 2004-10-12 | Fairchild Semiconductor Corporation | Vertical charge control semiconductor device |
US6756273B2 (en) * | 2001-03-12 | 2004-06-29 | Semiconductor Components Industries, L.L.C. | Semiconductor component and method of manufacturing |
US7061066B2 (en) | 2001-10-17 | 2006-06-13 | Fairchild Semiconductor Corporation | Schottky diode using charge balance structure |
KR100859701B1 (ko) | 2002-02-23 | 2008-09-23 | 페어차일드코리아반도체 주식회사 | 고전압 수평형 디모스 트랜지스터 및 그 제조 방법 |
US6852634B2 (en) * | 2002-06-27 | 2005-02-08 | Semiconductor Components Industries L.L.C. | Low cost method of providing a semiconductor device having a high channel density |
US7576388B1 (en) | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
US7033891B2 (en) | 2002-10-03 | 2006-04-25 | Fairchild Semiconductor Corporation | Trench gate laterally diffused MOSFET devices and methods for making such devices |
US6710418B1 (en) | 2002-10-11 | 2004-03-23 | Fairchild Semiconductor Corporation | Schottky rectifier with insulation-filled trenches and method of forming the same |
US6876035B2 (en) * | 2003-05-06 | 2005-04-05 | International Business Machines Corporation | High voltage N-LDMOS transistors having shallow trench isolation region |
US6992352B2 (en) | 2003-05-15 | 2006-01-31 | Analog Power Limited | Trenched DMOS devices and methods and processes for making same |
US7638841B2 (en) | 2003-05-20 | 2009-12-29 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
DE10345345A1 (de) * | 2003-09-19 | 2005-04-14 | Atmel Germany Gmbh | Verfahren zur Herstellung von Halbleiterbauelementen in einem Halbleitersubstrat |
DE10345346B4 (de) * | 2003-09-19 | 2010-09-16 | Atmel Automotive Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements mit aktiven Bereichen, die durch Isolationsstrukturen voneinander getrennt sind |
JP2005101449A (ja) * | 2003-09-26 | 2005-04-14 | Semiconductor Leading Edge Technologies Inc | 半導体装置及びその製造方法 |
KR100994719B1 (ko) | 2003-11-28 | 2010-11-16 | 페어차일드코리아반도체 주식회사 | 슈퍼정션 반도체장치 |
US7368777B2 (en) | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
US7265415B2 (en) | 2004-10-08 | 2007-09-04 | Fairchild Semiconductor Corporation | MOS-gated transistor with reduced miller capacitance |
WO2006108011A2 (en) | 2005-04-06 | 2006-10-12 | Fairchild Semiconductor Corporation | Trenched-gate field effect transistors and methods of forming the same |
US7385248B2 (en) | 2005-08-09 | 2008-06-10 | Fairchild Semiconductor Corporation | Shielded gate field effect transistor with improved inter-poly dielectric |
JP4956953B2 (ja) * | 2005-09-30 | 2012-06-20 | 株式会社デンソー | 半導体装置 |
KR101142104B1 (ko) * | 2006-02-23 | 2012-05-03 | 비쉐이-실리코닉스 | 단채널 트렌치 mosfet 및 디바이스를 형성하는 공정 |
US7446374B2 (en) * | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
JP2010505270A (ja) * | 2006-09-27 | 2010-02-18 | マックスパワー・セミコンダクター・インコーポレイテッド | 窪んだフィールドプレートを備えたパワーmosfet |
JP5767430B2 (ja) * | 2007-08-10 | 2015-08-19 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
WO2009039441A1 (en) | 2007-09-21 | 2009-03-26 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US9484451B2 (en) * | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
US20100013009A1 (en) * | 2007-12-14 | 2010-01-21 | James Pan | Structure and Method for Forming Trench Gate Transistors with Low Gate Resistance |
US7772668B2 (en) | 2007-12-26 | 2010-08-10 | Fairchild Semiconductor Corporation | Shielded gate trench FET with multiple channels |
US20120273916A1 (en) | 2011-04-27 | 2012-11-01 | Yedinak Joseph A | Superjunction Structures for Power Devices and Methods of Manufacture |
US8174067B2 (en) | 2008-12-08 | 2012-05-08 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
US8319290B2 (en) | 2010-06-18 | 2012-11-27 | Fairchild Semiconductor Corporation | Trench MOS barrier schottky rectifier with a planar surface using CMP techniques |
JP2010283368A (ja) * | 2010-07-26 | 2010-12-16 | Renesas Electronics Corp | 半導体装置の製造方法 |
CN102637737B (zh) * | 2011-02-10 | 2015-04-15 | 上海华虹宏力半导体制造有限公司 | 沟槽式场效应管及其制备方法 |
US8673700B2 (en) | 2011-04-27 | 2014-03-18 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US8772868B2 (en) | 2011-04-27 | 2014-07-08 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US8836028B2 (en) | 2011-04-27 | 2014-09-16 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US8786010B2 (en) | 2011-04-27 | 2014-07-22 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US8872278B2 (en) | 2011-10-25 | 2014-10-28 | Fairchild Semiconductor Corporation | Integrated gate runner and field implant termination for trench devices |
US9431249B2 (en) | 2011-12-01 | 2016-08-30 | Vishay-Siliconix | Edge termination for super junction MOSFET devices |
US9614043B2 (en) | 2012-02-09 | 2017-04-04 | Vishay-Siliconix | MOSFET termination trench |
US8816431B2 (en) | 2012-03-09 | 2014-08-26 | Fairchild Semiconductor Corporation | Shielded gate MOSFET device with a funnel-shaped trench |
US9842911B2 (en) | 2012-05-30 | 2017-12-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
JP2014146738A (ja) * | 2013-01-30 | 2014-08-14 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US9508596B2 (en) | 2014-06-20 | 2016-11-29 | Vishay-Siliconix | Processes used in fabricating a metal-insulator-semiconductor field effect transistor |
US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
WO2016028944A1 (en) | 2014-08-19 | 2016-02-25 | Vishay-Siliconix | Super-junction metal oxide semiconductor field effect transistor |
US10269951B2 (en) * | 2017-05-16 | 2019-04-23 | General Electric Company | Semiconductor device layout and method for forming same |
CN108520898A (zh) * | 2018-04-02 | 2018-09-11 | 北京绿能芯创电子科技有限公司 | 具有可调变起始电压的Mosfet组件及其制造方法 |
CN109065628A (zh) * | 2018-08-21 | 2018-12-21 | 电子科技大学 | 一种体区变掺杂的槽栅dmos器件 |
KR102514904B1 (ko) | 2019-02-28 | 2023-03-27 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 증가된 항복 전압을 갖는 고전압 반도체 장치 및 그 제조 방법 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4137109A (en) * | 1976-04-12 | 1979-01-30 | Texas Instruments Incorporated | Selective diffusion and etching method for isolation of integrated logic circuit |
US4398339A (en) * | 1977-04-15 | 1983-08-16 | Supertex, Inc. | Fabrication method for high power MOS device |
US4374455A (en) * | 1979-10-30 | 1983-02-22 | Rca Corporation | Method for manufacturing a vertical, grooved MOSFET |
US4983535A (en) * | 1981-10-15 | 1991-01-08 | Siliconix Incorporated | Vertical DMOS transistor fabrication process |
EP0159663A3 (en) * | 1984-04-26 | 1987-09-23 | General Electric Company | High-density v-groove mos-controlled thyristors, insulated-gate transistors, and mosfets, and methods for fabrication |
US5082795A (en) * | 1986-12-05 | 1992-01-21 | General Electric Company | Method of fabricating a field effect semiconductor device having a self-aligned structure |
US4893160A (en) * | 1987-11-13 | 1990-01-09 | Siliconix Incorporated | Method for increasing the performance of trenched devices and the resulting structure |
US4914058A (en) * | 1987-12-29 | 1990-04-03 | Siliconix Incorporated | Grooved DMOS process with varying gate dielectric thickness |
US5072266A (en) * | 1988-12-27 | 1991-12-10 | Siliconix Incorporated | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry |
US4954854A (en) * | 1989-05-22 | 1990-09-04 | International Business Machines Corporation | Cross-point lightly-doped drain-source trench transistor and fabrication process therefor |
JP2689606B2 (ja) * | 1989-05-24 | 1997-12-10 | 富士電機株式会社 | 絶縁ゲート電界効果型トランジスタの製造方法 |
US5168331A (en) * | 1991-01-31 | 1992-12-01 | Siliconix Incorporated | Power metal-oxide-semiconductor field effect transistor |
US5460985A (en) * | 1991-07-26 | 1995-10-24 | Ipics Corporation | Production method of a verticle type MOSFET |
-
1993
- 1993-03-15 US US08/031,798 patent/US5341011A/en not_active Expired - Lifetime
-
1994
- 1994-03-15 EP EP94301847A patent/EP0616372B1/en not_active Expired - Lifetime
- 1994-03-15 DE DE69430768T patent/DE69430768T2/de not_active Expired - Fee Related
- 1994-03-15 SG SG1996003997A patent/SG52400A1/en unknown
- 1994-03-15 JP JP07165094A patent/JP3677304B2/ja not_active Expired - Lifetime
- 1994-03-15 DE DE0616372T patent/DE616372T1/de active Pending
- 1994-08-11 US US08/289,358 patent/US5474943A/en not_active Expired - Lifetime
-
2005
- 2005-03-14 JP JP2005071113A patent/JP2005167294A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008218711A (ja) * | 2007-03-05 | 2008-09-18 | Renesas Technology Corp | 半導体装置およびその製造方法、ならびに電源装置 |
JP2010098326A (ja) * | 2009-12-21 | 2010-04-30 | Renesas Technology Corp | 半導体装置およびその製造方法、ならびに電源装置 |
Also Published As
Publication number | Publication date |
---|---|
DE69430768D1 (de) | 2002-07-18 |
DE69430768T2 (de) | 2002-11-14 |
EP0616372A2 (en) | 1994-09-21 |
EP0616372A3 (en) | 1996-08-14 |
US5341011A (en) | 1994-08-23 |
SG52400A1 (en) | 1998-09-28 |
JP3677304B2 (ja) | 2005-07-27 |
DE616372T1 (de) | 1995-11-09 |
EP0616372B1 (en) | 2002-06-12 |
US5474943A (en) | 1995-12-12 |
JPH0750412A (ja) | 1995-02-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3677304B2 (ja) | Dmosトランジスタの形成方法 | |
US7202525B2 (en) | Trench MOSFET with trench tip implants | |
US4914058A (en) | Grooved DMOS process with varying gate dielectric thickness | |
US9224855B2 (en) | Trench gated power device with multiple trench width and its fabrication process | |
KR100759937B1 (ko) | 트렌치 mosfet 디바이스, 및 이러한 트렌치 mosfet 디바이스를 형성하는 방법 | |
KR100869324B1 (ko) | 베이스 리치-쓰루를 방지하는 측면 확장 베이스 차폐영역을 구비한 전력 반도체 소자 및 그 제조방법 | |
US7663186B2 (en) | Semiconductor device | |
JP4028482B2 (ja) | トレンチゲート電極を有するパワーmosfet及びその製造方法 | |
EP0422940B1 (en) | Method of forming a DMOS transistor | |
US5821583A (en) | Trenched DMOS transistor with lightly doped tub | |
EP0735591B1 (en) | Improved DMOS device structure, and related manufacturing process | |
US7019360B2 (en) | High voltage power mosfet having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source | |
US20140015042A1 (en) | Semiconductor device and the method of manufacturing the same | |
JP2001189456A (ja) | 縦形mosトランジスタ及びその製造方法 | |
JP4490094B2 (ja) | トレンチ金属酸化膜半導体電界効果トランジスタ素子の製造方法 | |
KR20040033313A (ko) | 셀 트렌치 게이트 전계 효과 트렌지스터 및 그 제조 방법 | |
JP2005510088A (ja) | 多結晶シリコンソースコンタクト構造を有するトレンチ金属酸化膜半導体電界効果トランジスタデバイス | |
KR20000051294A (ko) | 전기적 특성이 향상된 디모스 전계 효과 트랜지스터 및 그 제조 방법 | |
KR20000013572A (ko) | 트렌치형 파워 모스펫 및 그 제조방법 | |
KR20000059529A (ko) | 고전압 소자 및 그 제조방법 | |
US6326271B2 (en) | Asymmetric MOS technology power device | |
TWI804303B (zh) | 寄生接面場效電晶體阻抗的降低方法 | |
KR101301583B1 (ko) | 전력용 반도체소자의 제조방법 | |
US20030006483A1 (en) | Short channel power MOSFET with increased breakdown voltage | |
KR20230114167A (ko) | 트렌치 측면 및 수평 채널을 가지는 반도체 소자 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050314 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081118 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090212 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090217 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090317 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090323 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090417 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090721 |