JP2005101440A - 半導体レーザおよびその製造方法 - Google Patents
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Abstract
【解決手段】 半導体基板100の上方に、下クラッド層103、量子井戸層を含む活性層105、および上クラッド層106がこの順序で形成されており、半導体基板101の表面と垂直である光出射端面124の近傍において活性層105の量子井戸層が活性層105に隣接する層と混晶化している部分を含む窓領域Cを有する半導体レーザであって、下クラッド層103の屈折率が上クラッド層106の屈折率よりも大きく、窓領域Cにおける光強度分布140Cの半導体基板100の表面に垂直な方向への広がりが利得領域Aにおける光強度分布140Aよりも広がっている半導体レーザとこの半導体レーザの製造方法である。
【選択図】 図2
Description
図1に本発明の半導体レーザの好ましい一例の模式的な斜視図を示す。図1に示すように、本発明の半導体レーザは、n型GaAs基板100上に順次形成されている、n型GaAsバッファ層101と、n型GaInPバッファ層102と、n型(Al0.65Ga0.35)0.5In0.5P第1下クラッド層103(厚さ2.0μm)と、n型(Al0.665Ga0.335)0.5In0.5P第2下クラッド層104(厚さ0.2μm)と、量子井戸層を含むアンドープ活性層105と、p型(Al0.68Ga0.32)0.5In0.5P第1上クラッド層106(厚さ0.1μm)と、p型GaInPエッチングストップ層107とを含む。
図11に本発明の半導体レーザの他の好ましい一例の模式的な斜視図を示す。図11に示すように、この半導体レーザは、n型GaAs基板200上に順次形成されている、n型GaAsバッファ層201と、n型GaInPバッファ層202と、n型(Al0.65Ga0.35)0.5In0.5P第1下クラッド層203(厚さ2.0μm)と、n型(Al0.68Ga0.32)0.5In0.5P第2下クラッド層204(厚さ0.2μm)と、量子井戸層を含むアンドープ活性層205と、p型(Al0.68Ga0.32)0.5In0.5P第1上クラッド層206(厚さ0.1μm)と、p型GaInPエッチングストップ層207とを含む。
上記実施の形態においては、n型第1下クラッド層とGaInPバッファ層との間、およびp型第2上クラッド層とp型GaInP中間バンドギャップ層との間に低屈折率層を設けることによって、光の損失をさらに低減することもできる。
Claims (16)
- 半導体基板の上方に、下クラッド層、量子井戸層を含む活性層、および上クラッド層がこの順序で形成されており、前記半導体基板の表面と垂直である光出射端面の近傍において前記活性層の量子井戸層が前記活性層に隣接する層と混晶化している部分を含む窓領域を有する半導体レーザであって、前記下クラッド層の屈折率が前記上クラッド層の屈折率よりも大きく、前記窓領域における光強度分布の前記半導体基板の表面に垂直な方向への広がりが利得領域における光強度分布よりも広がっていることを特徴とする、半導体レーザ。
- 半導体基板の上方に、下クラッド層、量子井戸層を含む活性層、および上クラッド層がこの順序で形成されており、前記半導体基板の表面と垂直である光出射端面の近傍において前記活性層の量子井戸層が前記活性層に隣接する層と混晶化している部分を含む窓領域を有する半導体レーザであって、前記下クラッド層が前記上クラッド層の屈折率よりも大きい屈折率を有する層を含み、前記窓領域における光強度分布の前記半導体基板の表面に垂直な方向への広がりが利得領域における光強度分布よりも広がっていることを特徴とする、半導体レーザ。
- 前記下クラッド層は前記半導体基板側の第1下クラッド層と前記活性層側の第2下クラッド層とからなり、前記第1下クラッド層の屈折率が前記第2下クラッド層の屈折率よりも大きいことを特徴とする、請求項2に記載の半導体レーザ。
- 前記第1下クラッド層の屈折率が前記第2下クラッド層の屈折率よりも0.003以上0.02以下大きいことを特徴とする、請求項3に記載の半導体レーザ。
- 前記第2下クラッド層の厚さが0.05μm以上0.9μm以下であることを特徴とする、請求項3または4に記載の半導体レーザ。
- 前記光出射端面から、前記窓領域、光強度分布の広がりが変化する領域である遷移領域および前記利得領域をこの順序で有し、前記窓領域における前記活性層のフォトルミネッセンス波長が、前記利得領域における前記活性層のフォトルミネッセンス波長よりも15nm以上短波長であることを特徴とする、請求項1から5のいずれかに記載の半導体レーザ。
- 前記光出射端面から、前記窓領域、光強度分布の広がりが変化する領域である遷移領域および前記利得領域をこの順序で有し、前記窓領域における前記活性層のフォトルミネッセンス波長が、前記利得領域における前記活性層のフォトルミネッセンス波長よりも40nm以上短波長であることを特徴とする、請求項1から6のいずれかに記載の半導体レーザ。
- 前記光出射端面から、前記窓領域、光強度分布の広がりが変化する領域である遷移領域および前記利得領域をこの順序で有し、前記遷移領域の前記光出射端面と垂直な方向における幅が16μm以上であることを特徴とする、請求項1から7のいずれかに記載の半導体レーザ。
- 前記上クラッド層の上方に前記上クラッド層よりも価電子帯のエネルギの高いキャップ層を有し、前記混晶化は前記キャップ層の上方から注入された不純物が拡散することにより行なわれたことを特徴とする、請求項1から8のいずれかに記載の半導体レーザ。
- 前記下クラッド層、前記活性層および前記上クラッド層は、(AlxGa1-x)yIn1-yP(ただし、0≦x≦1、0≦y≦1である。)またはGazIn1-zP(ただし、0≦z≦1である。)の一般式で表わされる半導体層からなることを特徴とする、請求項1から9のいずれかに記載の半導体レーザ。
- 前記下クラッド層、前記活性層および前記上クラッド層は、AlrGa1-rAs(ただし、0≦r≦1である。)またはGaAsの一般式で表わされる半導体層からなることを特徴とする、請求項1から9のいずれかに記載の半導体レーザ。
- 半導体基板の上方に、下クラッド層、量子井戸層を含む活性層、および上クラッド層がこの順序で形成されており、前記下クラッド層の屈折率が前記上クラッド層の屈折率よりも大きい半導体レーザの製造方法であって、前記上クラッド層の上方に前記上クラッド層よりも価電子帯のエネルギの高いキャップ層を形成する工程と、前記キャップ層の上方から不純物を注入することにより、前記半導体基板の表面と垂直な光出射端面の近傍において前記活性層の量子井戸層が前記活性層に隣接する層と混晶化した部分を形成する工程と、を含む、半導体レーザの製造方法。
- 半導体基板の上方に、下クラッド層、量子井戸層を含む活性層、および上クラッド層がこの順序で形成されており、前記下クラッド層が前記上クラッド層の屈折率よりも大きい屈折率を有する層を含む半導体レーザの製造方法であって、前記上クラッド層の上方に前記上クラッド層よりも価電子帯のエネルギの高いキャップ層を形成する工程と、前記キャップ層の上方から不純物を注入することにより、前記半導体基板の表面と垂直な光出射端面の近傍において前記活性層の量子井戸層が前記活性層に隣接する層と混晶化した部分を形成する工程と、を含む、半導体レーザの製造方法。
- 前記上クラッド層中にベリリウムが含まれていることを特徴とする、請求項12または13に記載の半導体レーザの製造方法。
- 前記上クラッド層が分子線エピタキシー法によって積層されることを特徴とする、請求項12から14のいずれかに記載の半導体レーザの製造方法。
- 前記上クラッド層中にマグネシウムまたは亜鉛が含まれていることを特徴とする、請求項12または13に記載の半導体レーザの製造方法。
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007080887A (ja) * | 2005-09-12 | 2007-03-29 | Matsushita Electric Ind Co Ltd | 2波長半導体レーザ及びその製造方法 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1126864A (ja) * | 1997-07-03 | 1999-01-29 | Toshiba Corp | 半導体レーザ |
JPH11145553A (ja) * | 1997-11-10 | 1999-05-28 | Hitachi Ltd | 半導体レーザ素子及びその作製法 |
JP2001210910A (ja) * | 1999-11-17 | 2001-08-03 | Mitsubishi Electric Corp | 半導体レーザ |
JP2002026451A (ja) * | 2000-07-10 | 2002-01-25 | Mitsubishi Chemicals Corp | 半導体光デバイス装置 |
JP2002185077A (ja) * | 2000-12-14 | 2002-06-28 | Mitsubishi Electric Corp | 半導体レーザ装置及びその製造方法 |
JP2004235382A (ja) * | 2003-01-30 | 2004-08-19 | Mitsubishi Electric Corp | 半導体レーザ装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06252448A (ja) * | 1993-02-25 | 1994-09-09 | Mitsubishi Electric Corp | 半導体発光素子およびその製造方法 |
US5301202A (en) * | 1993-02-25 | 1994-04-05 | International Business Machines, Corporation | Semiconductor ridge waveguide laser with asymmetrical cladding |
JP3443241B2 (ja) | 1996-06-28 | 2003-09-02 | 三洋電機株式会社 | 半導体レーザ素子 |
JP4422806B2 (ja) | 1998-02-18 | 2010-02-24 | 三菱電機株式会社 | 半導体レーザ |
JP4387472B2 (ja) * | 1998-02-18 | 2009-12-16 | 三菱電機株式会社 | 半導体レーザ |
JP3630395B2 (ja) * | 1999-06-28 | 2005-03-16 | シャープ株式会社 | 半導体レーザ素子およびその製造方法 |
JP3763708B2 (ja) * | 1999-09-21 | 2006-04-05 | 株式会社東芝 | 半導体レーザの製造方法 |
JP3801410B2 (ja) * | 2000-03-06 | 2006-07-26 | シャープ株式会社 | 半導体レーザ素子及びその製造方法 |
JP3911140B2 (ja) | 2001-09-05 | 2007-05-09 | シャープ株式会社 | 半導体レーザの製造方法 |
-
2003
- 2003-09-26 JP JP2003335423A patent/JP3926313B2/ja not_active Expired - Lifetime
-
2004
- 2004-09-23 US US10/949,536 patent/US7362788B2/en active Active
- 2004-09-27 CN CNB2004100851202A patent/CN1301578C/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1126864A (ja) * | 1997-07-03 | 1999-01-29 | Toshiba Corp | 半導体レーザ |
JPH11145553A (ja) * | 1997-11-10 | 1999-05-28 | Hitachi Ltd | 半導体レーザ素子及びその作製法 |
JP2001210910A (ja) * | 1999-11-17 | 2001-08-03 | Mitsubishi Electric Corp | 半導体レーザ |
JP2002026451A (ja) * | 2000-07-10 | 2002-01-25 | Mitsubishi Chemicals Corp | 半導体光デバイス装置 |
JP2002185077A (ja) * | 2000-12-14 | 2002-06-28 | Mitsubishi Electric Corp | 半導体レーザ装置及びその製造方法 |
JP2004235382A (ja) * | 2003-01-30 | 2004-08-19 | Mitsubishi Electric Corp | 半導体レーザ装置 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007080887A (ja) * | 2005-09-12 | 2007-03-29 | Matsushita Electric Ind Co Ltd | 2波長半導体レーザ及びその製造方法 |
JP2007088188A (ja) * | 2005-09-22 | 2007-04-05 | Matsushita Electric Ind Co Ltd | 多波長半導体レーザ装置 |
JP2007103435A (ja) * | 2005-09-30 | 2007-04-19 | Rohm Co Ltd | 赤色半導体レーザ |
US7620086B2 (en) | 2006-10-19 | 2009-11-17 | Sharp Kabushiki Kaisha | Semiconductor laser and electronic device |
JP2010199520A (ja) * | 2009-02-27 | 2010-09-09 | Renesas Electronics Corp | 半導体レーザ及び半導体レーザの製造方法 |
JP2013247210A (ja) * | 2012-05-25 | 2013-12-09 | Sharp Corp | 半導体レーザ装置 |
WO2016024609A1 (ja) * | 2014-08-12 | 2016-02-18 | 古河電気工業株式会社 | 半導体素子 |
JPWO2016024609A1 (ja) * | 2014-08-12 | 2017-05-25 | 古河電気工業株式会社 | 半導体素子 |
US10109982B2 (en) | 2014-08-12 | 2018-10-23 | Furukawa Electric Co., Ltd. | Semiconductor device |
JP2017135158A (ja) * | 2016-01-25 | 2017-08-03 | 三菱電機株式会社 | 光半導体装置 |
CN108233178A (zh) * | 2016-12-12 | 2018-06-29 | 联亚光电工业股份有限公司 | 半导体激光装置 |
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