JP2004523649A5 - - Google Patents
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- Publication number
- JP2004523649A5 JP2004523649A5 JP2002554295A JP2002554295A JP2004523649A5 JP 2004523649 A5 JP2004523649 A5 JP 2004523649A5 JP 2002554295 A JP2002554295 A JP 2002554295A JP 2002554295 A JP2002554295 A JP 2002554295A JP 2004523649 A5 JP2004523649 A5 JP 2004523649A5
- Authority
- JP
- Japan
- Prior art keywords
- coating
- component
- boron nitride
- yttria
- composite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000576 coating method Methods 0.000 claims 51
- 239000011248 coating agent Substances 0.000 claims 38
- 229910052582 BN Inorganic materials 0.000 claims 22
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 22
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims 22
- 239000002131 composite material Substances 0.000 claims 20
- 239000000463 material Substances 0.000 claims 9
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000000919 ceramic Substances 0.000 claims 5
- 229910052751 metal Inorganic materials 0.000 claims 5
- 239000002184 metal Substances 0.000 claims 5
- 229920000642 polymer Polymers 0.000 claims 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 4
- 230000003628 erosive effect Effects 0.000 claims 4
- 239000000203 mixture Substances 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 3
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 238000001704 evaporation Methods 0.000 claims 2
- 230000008020 evaporation Effects 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000003618 dip coating Methods 0.000 claims 1
- 238000007737 ion beam deposition Methods 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 238000007750 plasma spraying Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 238000000859 sublimation Methods 0.000 claims 1
- 230000008022 sublimation Effects 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/749,924 US6613442B2 (en) | 2000-12-29 | 2000-12-29 | Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof |
| PCT/US2001/043836 WO2002053799A1 (en) | 2000-12-29 | 2001-11-23 | Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004523649A JP2004523649A (ja) | 2004-08-05 |
| JP2004523649A5 true JP2004523649A5 (enExample) | 2005-12-22 |
| JP4634005B2 JP4634005B2 (ja) | 2011-02-16 |
Family
ID=25015789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002554295A Expired - Fee Related JP4634005B2 (ja) | 2000-12-29 | 2001-11-23 | 半導体処理装置の窒化ホウ素とイットリアとの複合材料の構成部品及びその製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6613442B2 (enExample) |
| EP (1) | EP1364075A1 (enExample) |
| JP (1) | JP4634005B2 (enExample) |
| KR (1) | KR100830068B1 (enExample) |
| CN (1) | CN1484712B (enExample) |
| TW (1) | TW533494B (enExample) |
| WO (1) | WO2002053799A1 (enExample) |
Families Citing this family (78)
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- 2000-12-29 US US09/749,924 patent/US6613442B2/en not_active Expired - Lifetime
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2001
- 2001-11-23 JP JP2002554295A patent/JP4634005B2/ja not_active Expired - Fee Related
- 2001-11-23 EP EP01995199A patent/EP1364075A1/en not_active Withdrawn
- 2001-11-23 CN CN018215572A patent/CN1484712B/zh not_active Expired - Fee Related
- 2001-11-23 KR KR1020037008515A patent/KR100830068B1/ko not_active Expired - Fee Related
- 2001-11-23 WO PCT/US2001/043836 patent/WO2002053799A1/en not_active Ceased
- 2001-12-04 TW TW090130001A patent/TW533494B/zh not_active IP Right Cessation
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2003
- 2003-03-21 US US10/393,010 patent/US6773751B2/en not_active Expired - Lifetime
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