TW533494B - Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof - Google Patents

Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof Download PDF

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Publication number
TW533494B
TW533494B TW090130001A TW90130001A TW533494B TW 533494 B TW533494 B TW 533494B TW 090130001 A TW090130001 A TW 090130001A TW 90130001 A TW90130001 A TW 90130001A TW 533494 B TW533494 B TW 533494B
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TW
Taiwan
Prior art keywords
coating
component
patent application
scope
boron nitride
Prior art date
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TW090130001A
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English (en)
Chinese (zh)
Inventor
Robert J O'donnell
Christopher C Chang
John E Daugherty
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Lam Res Corp
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Publication of TW533494B publication Critical patent/TW533494B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
TW090130001A 2000-12-29 2001-12-04 Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof TW533494B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/749,924 US6613442B2 (en) 2000-12-29 2000-12-29 Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof

Publications (1)

Publication Number Publication Date
TW533494B true TW533494B (en) 2003-05-21

Family

ID=25015789

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090130001A TW533494B (en) 2000-12-29 2001-12-04 Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof

Country Status (7)

Country Link
US (2) US6613442B2 (enExample)
EP (1) EP1364075A1 (enExample)
JP (1) JP4634005B2 (enExample)
KR (1) KR100830068B1 (enExample)
CN (1) CN1484712B (enExample)
TW (1) TW533494B (enExample)
WO (1) WO2002053799A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI465155B (zh) * 2005-07-14 2014-12-11 Univ Tohoku 半導體製造裝置用構件及其洗淨方法
TWI514464B (enExample) * 2012-04-25 2015-12-21

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3510993B2 (ja) * 1999-12-10 2004-03-29 トーカロ株式会社 プラズマ処理容器内部材およびその製造方法
KR20010062209A (ko) 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
JP4790896B2 (ja) * 2000-05-26 2011-10-12 エーユー オプトロニクス コーポレイション トップゲート型ｔｆｔを含むアクティブマトリックスデバイスの製造方法および製造装置
US6613442B2 (en) * 2000-12-29 2003-09-02 Lam Research Corporation Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof
US7670688B2 (en) * 2001-06-25 2010-03-02 Applied Materials, Inc. Erosion-resistant components for plasma process chambers
KR100443772B1 (ko) * 2002-01-16 2004-08-09 삼성전자주식회사 코팅 처리된 기재
US20080264564A1 (en) * 2007-04-27 2008-10-30 Applied Materials, Inc. Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas
US20080213496A1 (en) * 2002-02-14 2008-09-04 Applied Materials, Inc. Method of coating semiconductor processing apparatus with protective yttrium-containing coatings
US6780787B2 (en) * 2002-03-21 2004-08-24 Lam Research Corporation Low contamination components for semiconductor processing apparatus and methods for making components
US7026009B2 (en) * 2002-03-27 2006-04-11 Applied Materials, Inc. Evaluation of chamber components having textured coatings
US6784017B2 (en) * 2002-08-12 2004-08-31 Precision Dynamics Corporation Method of creating a high performance organic semiconductor device
US7166166B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US7147749B2 (en) 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US6837966B2 (en) 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7166200B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US6798519B2 (en) 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US7137353B2 (en) 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US7204912B2 (en) 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
KR100772740B1 (ko) 2002-11-28 2007-11-01 동경 엘렉트론 주식회사 플라즈마 처리 용기 내부재
US6907841B2 (en) * 2002-12-27 2005-06-21 Korea Institute Of Science And Technology Apparatus and method for synthesizing spherical diamond powder by using chemical vapor deposition method
US20040134427A1 (en) * 2003-01-09 2004-07-15 Derderian Garo J. Deposition chamber surface enhancement and resulting deposition chambers
JP4532479B2 (ja) 2003-03-31 2010-08-25 東京エレクトロン株式会社 処理部材のためのバリア層およびそれと同じものを形成する方法。
CN100495413C (zh) 2003-03-31 2009-06-03 东京毅力科创株式会社 用于邻接在处理元件上的相邻覆层的方法
WO2005029564A1 (ja) * 2003-09-16 2005-03-31 Shin-Etsu Quartz Products Co., Ltd. プラズマエッチング装置用部材及びその製造方法
JP2005167227A (ja) * 2003-11-11 2005-06-23 Ibiden Co Ltd ガス噴出ヘッド、その製法、半導体製造装置及び耐食性材料
US7220497B2 (en) * 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
US20070158188A1 (en) * 2004-06-15 2007-07-12 Ivanov Eugene Y Metal foam shield for sputter reactor
US7119032B2 (en) 2004-08-23 2006-10-10 Air Products And Chemicals, Inc. Method to protect internal components of semiconductor processing equipment using layered superlattice materials
US20060043067A1 (en) * 2004-08-26 2006-03-02 Lam Research Corporation Yttria insulator ring for use inside a plasma chamber
JP2006186306A (ja) * 2004-09-30 2006-07-13 Toshiba Ceramics Co Ltd ガス拡散プレートおよびその製造方法
US7552521B2 (en) 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
JP2006207012A (ja) * 2004-12-28 2006-08-10 Toshiba Ceramics Co Ltd イットリウム系セラミックス被覆材およびその製造方法
TWI282597B (en) 2004-12-28 2007-06-11 Toshiba Ceramics Co Yttrium-containing ceramic coated material and method of manufacturing the same
US7601242B2 (en) 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
JP2006199998A (ja) * 2005-01-20 2006-08-03 Seiko Epson Corp 成膜装置、成膜方法
US20070079936A1 (en) * 2005-09-29 2007-04-12 Applied Materials, Inc. Bonded multi-layer RF window
US8608851B2 (en) * 2005-10-14 2013-12-17 Advanced Micro-Fabrication Equipment, Inc. Asia Plasma confinement apparatus, and method for confining a plasma
US7942970B2 (en) * 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition
US7743731B2 (en) * 2006-03-30 2010-06-29 Tokyo Electron Limited Reduced contaminant gas injection system and method of using
US7514125B2 (en) * 2006-06-23 2009-04-07 Applied Materials, Inc. Methods to improve the in-film defectivity of PECVD amorphous carbon films
US10242888B2 (en) 2007-04-27 2019-03-26 Applied Materials, Inc. Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
US8367227B2 (en) 2007-08-02 2013-02-05 Applied Materials, Inc. Plasma-resistant ceramics with controlled electrical resistivity
KR101486553B1 (ko) * 2008-03-20 2015-01-26 주식회사 원익아이피에스 진공처리장치
US20100055298A1 (en) * 2008-08-28 2010-03-04 Applied Materials, Inc. Process kit shields and methods of use thereof
US20100140222A1 (en) * 2008-12-10 2010-06-10 Sun Jennifer Y Filled polymer composition for etch chamber component
US20130115418A1 (en) * 2011-11-03 2013-05-09 Coorstek, Inc. Multilayer rare-earth oxide coatings and methods of making
RU2515600C2 (ru) * 2011-11-29 2014-05-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Воронежский государственный технический университет" Способ получения наноструктурного покрытия
CN102522306A (zh) * 2011-12-29 2012-06-27 中微半导体设备(上海)有限公司 喷淋头
US20130277203A1 (en) * 2012-04-24 2013-10-24 Applied Materials, Inc. Process kit shield and physical vapor deposition chamber having same
US20140097752A1 (en) * 2012-10-09 2014-04-10 Varian Semiconductor Equipment Associates, Inc. Inductively Coupled Plasma ION Source Chamber with Dopant Material Shield
CN103794460B (zh) * 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于半导体装置性能改善的涂层
KR101486057B1 (ko) * 2013-05-31 2015-01-23 주)에코텍코리아 산화이트륨과 질화붕소를 이용한 반도체 cvd 공정용 제품의 제조방법
CN104347389B (zh) * 2013-07-23 2017-07-21 中微半导体设备(上海)有限公司 等离子体刻蚀方法
US11015244B2 (en) * 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
CN110189988B (zh) * 2014-06-11 2023-10-03 高美科株式会社 用于薄膜沉积设备的内部材料及其制造方法
KR101790394B1 (ko) 2014-06-11 2017-10-26 (주)코미코 박막 증착 장치용 내부재 및 이의 제조 방법
CN105304519A (zh) * 2014-07-11 2016-02-03 北京北方微电子基地设备工艺研究中心有限责任公司 内衬、内衬的制备方法及反应腔室
KR20170006807A (ko) 2015-07-09 2017-01-18 (주)티티에스 공정 챔버의 부품파트 및 화학기상증착에 의해 이트리아를 부품파트에 증착하는 방법
WO2017120241A1 (en) * 2016-01-07 2017-07-13 Applied Materials, Inc. Atomic layer etching system with remote plasma source and dc electrode
CN108779568B (zh) * 2016-03-11 2021-06-01 应用材料公司 在半导体处理设备上以电化学方式形成氧化钇的方法
KR102603742B1 (ko) 2016-03-11 2023-11-16 어플라이드 머티어리얼스, 인코포레이티드 알루미늄 반도체 프로세스 장비를 위한 배리어 층으로서의 알루미늄 전기도금 및 산화물 형성
US20180005867A1 (en) * 2016-07-01 2018-01-04 Lam Research Corporation Esc ceramic sidewall modification for particle and metals performance enhancements
US20180016678A1 (en) 2016-07-15 2018-01-18 Applied Materials, Inc. Multi-layer coating with diffusion barrier layer and erosion resistant layer
US10407789B2 (en) 2016-12-08 2019-09-10 Applied Materials, Inc. Uniform crack-free aluminum deposition by two step aluminum electroplating process
US11261533B2 (en) 2017-02-10 2022-03-01 Applied Materials, Inc. Aluminum plating at low temperature with high efficiency
JP7065599B2 (ja) * 2017-12-28 2022-05-12 株式会社トクヤマ パイロリティック窒化ホウ素及びパイロリティック窒化ホウ素の製造方法、並びにパイロリティック窒化ホウ素を用いた結晶成長装置
CN108374160B (zh) * 2018-03-08 2019-10-22 南京元汀环境科技有限公司 一种钛基掺硼金刚石涂层的制备方法
CN110453195B (zh) * 2018-05-07 2021-09-28 中国科学院宁波材料技术与工程研究所 用于金属表面腐蚀防护的氮化硼复合薄膜、其制法与应用
US10923327B2 (en) * 2018-08-01 2021-02-16 Applied Materials, Inc. Chamber liner
WO2021072040A1 (en) * 2019-10-10 2021-04-15 Lam Research Corporation Inorganic coating of plasma chamber component
US12129569B2 (en) * 2020-02-19 2024-10-29 Lam Research Corporation Method for conditioning semiconductor processing chamber components
CN111632205B (zh) * 2020-06-24 2023-04-14 北京华钽生物科技开发有限公司 一种应用于植入医疗器械的医用涂层及其制备方法
WO2022040233A1 (en) * 2020-08-21 2022-02-24 Lam Research Corporation Erosion resistant plasma processing chamber components
US20230097687A1 (en) * 2021-09-30 2023-03-30 Entegris, Inc. Additive manufactured articles having coated surfaces and related methods
KR20250152604A (ko) * 2023-02-21 2025-10-23 램 리써치 코포레이션 금속 몸체 및 레이저 글레이징된 세라믹 코팅을 갖는 반도체 프로세싱 챔버 부품

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340462A (en) 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
US4397724A (en) 1981-08-24 1983-08-09 Bell Telephone Laboratories, Incorporated Apparatus and method for plasma-assisted etching of wafers
FR2538987A1 (fr) 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
US4534816A (en) 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
US4612077A (en) 1985-07-29 1986-09-16 The Perkin-Elmer Corporation Electrode for plasma etching system
JPS62103379A (ja) 1985-10-29 1987-05-13 Showa Alum Corp Ｃｖｄ装置およびドライ・エツチング装置における真空チヤンバの製造方法
JPS6362858A (ja) * 1986-09-01 1988-03-19 Toyota Motor Corp セラミツク溶射層の形成方法
JPH0741153Y2 (ja) 1987-10-26 1995-09-20 東京応化工業株式会社 試料処理用電極
US5024716A (en) 1988-01-20 1991-06-18 Canon Kabushiki Kaisha Plasma processing apparatus for etching, ashing and film-formation
JPH01275779A (ja) 1988-04-28 1989-11-06 Tanaka Kikinzoku Kogyo Kk クラッド容器
US5262029A (en) 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
FR2662704B2 (fr) 1989-06-08 1992-08-14 Inst Francais Du Petrole Utilisation d'alliages a base de nickel dans un procede de craquage thermique d'une charge petroliere et reacteur pour la mise en óoeuvre du procede.
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
FR2662701B1 (fr) 1990-05-31 1997-07-18 Oreal Composition tinctoriale a base de 5,6-dihydroxyindolines et procede de teinture des fibres keratiniques.
US5192849A (en) 1990-08-10 1993-03-09 Texas Instruments Incorporated Multipurpose low-thermal-mass chuck for semiconductor processing equipment
US5074456A (en) 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US5268217A (en) 1990-09-27 1993-12-07 Diamonex, Incorporated Abrasion wear resistant coated substrate product
US5200232A (en) 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
EP1120817B8 (en) 1991-03-26 2007-10-10 Ngk Insulators, Ltd. Use of a corrosion-resistant member
US5273588A (en) 1992-06-15 1993-12-28 Materials Research Corporation Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
US5366585A (en) 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5364522A (en) * 1993-03-22 1994-11-15 Liang Wang Boride, carbide, nitride, oxynitride, and silicide infiltrated electrochemical ceramic films and coatings and the method of forming such
US5891253A (en) 1993-05-14 1999-04-06 Applied Materials, Inc. Corrosion resistant apparatus
US5522932A (en) 1993-05-14 1996-06-04 Applied Materials, Inc. Corrosion-resistant apparatus
JPH07153370A (ja) * 1993-11-30 1995-06-16 Kyocera Corp 放電管
US5822171A (en) 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
JP3308091B2 (ja) 1994-02-03 2002-07-29 東京エレクトロン株式会社 表面処理方法およびプラズマ処理装置
US5798016A (en) 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
US5680013A (en) 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
KR100331053B1 (ko) 1994-05-17 2002-06-20 가나이 쓰도무 플라즈마처리장치및플라즈마처리방법
US5641375A (en) 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
JPH0892747A (ja) * 1994-09-22 1996-04-09 Sekisui Chem Co Ltd 基板の表面処理方法
US5885356A (en) 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
US5569356A (en) 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
JP3164200B2 (ja) * 1995-06-15 2001-05-08 住友金属工業株式会社 マイクロ波プラズマ処理装置
US5824605A (en) 1995-07-31 1998-10-20 Lam Research Corporation Gas dispersion window for plasma apparatus and method of use thereof
US5686796A (en) 1995-12-20 1997-11-11 International Business Machines Corporation Ion implantation helicon plasma source with magnetic dipoles
US5838529A (en) 1995-12-22 1998-11-17 Lam Research Corporation Low voltage electrostatic clamp for substrates such as dielectric substrates
JPH09272965A (ja) * 1996-04-09 1997-10-21 Toshiba Corp 真空成膜装置用部品とそれを用いた真空成膜装置、およびターゲット、バッキングプレート
JP3360265B2 (ja) 1996-04-26 2002-12-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US5863376A (en) 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US5820723A (en) 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US6048798A (en) 1996-06-05 2000-04-11 Lam Research Corporation Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer
US5904778A (en) 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
US6120640A (en) * 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
US5879523A (en) 1997-09-29 1999-03-09 Applied Materials, Inc. Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
US6379575B1 (en) * 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
CA2275468A1 (en) * 1997-10-23 1999-05-06 Shinzou Mitomi Alumina-base ceramic sinter and process for producing the same
US6129808A (en) 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
JPH11340144A (ja) * 1998-05-22 1999-12-10 Hitachi Ltd 半導体装置の製造方法
US6123791A (en) * 1998-07-29 2000-09-26 Applied Materials, Inc. Ceramic composition for an apparatus and method for processing a substrate
JP2000096240A (ja) * 1998-09-25 2000-04-04 Neos Co Ltd プラズマ化学蒸着用有孔電極板の処理方法
JP3046288B1 (ja) * 1998-12-28 2000-05-29 京セラ株式会社 半導体・液晶製造装置用部材
JP2002249864A (ja) * 2000-04-18 2002-09-06 Ngk Insulators Ltd 耐ハロゲンガスプラズマ用部材およびその製造方法
US6620520B2 (en) * 2000-12-29 2003-09-16 Lam Research Corporation Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
US6537429B2 (en) * 2000-12-29 2003-03-25 Lam Research Corporation Diamond coatings on reactor wall and method of manufacturing thereof
US6613442B2 (en) * 2000-12-29 2003-09-02 Lam Research Corporation Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof
US6533910B2 (en) * 2000-12-29 2003-03-18 Lam Research Corporation Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI465155B (zh) * 2005-07-14 2014-12-11 Univ Tohoku 半導體製造裝置用構件及其洗淨方法
TWI514464B (enExample) * 2012-04-25 2015-12-21

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US20020086554A1 (en) 2002-07-04
US6773751B2 (en) 2004-08-10
JP2004523649A (ja) 2004-08-05
CN1484712A (zh) 2004-03-24
JP4634005B2 (ja) 2011-02-16
EP1364075A1 (en) 2003-11-26
US6613442B2 (en) 2003-09-02
WO2002053799A1 (en) 2002-07-11
KR20030066756A (ko) 2003-08-09
US20040137147A1 (en) 2004-07-15
KR100830068B1 (ko) 2008-05-16
CN1484712B (zh) 2010-04-21

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