TW533494B - Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof - Google Patents
Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof Download PDFInfo
- Publication number
- TW533494B TW533494B TW090130001A TW90130001A TW533494B TW 533494 B TW533494 B TW 533494B TW 090130001 A TW090130001 A TW 090130001A TW 90130001 A TW90130001 A TW 90130001A TW 533494 B TW533494 B TW 533494B
- Authority
- TW
- Taiwan
- Prior art keywords
- coating
- component
- patent application
- scope
- boron nitride
- Prior art date
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 47
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 43
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000576 coating method Methods 0.000 claims abstract description 85
- 239000011248 coating agent Substances 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000005260 corrosion Methods 0.000 claims abstract description 17
- 230000007797 corrosion Effects 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 47
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 24
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 22
- 239000000919 ceramic Substances 0.000 claims description 20
- 229920000642 polymer Polymers 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000003618 dip coating Methods 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000000859 sublimation Methods 0.000 claims description 2
- 230000008022 sublimation Effects 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 claims 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 238000005121 nitriding Methods 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910052810 boron oxide Inorganic materials 0.000 claims 1
- 238000005520 cutting process Methods 0.000 claims 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical class O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 238000007750 plasma spraying Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims 1
- 229910052902 vermiculite Inorganic materials 0.000 claims 1
- 235000019354 vermiculite Nutrition 0.000 claims 1
- 239000010455 vermiculite Substances 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 29
- 239000011247 coating layer Substances 0.000 description 17
- 239000010410 layer Substances 0.000 description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 8
- 238000009826 distribution Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000002861 polymer material Substances 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- -1 inscriptions Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229920002313 fluoropolymer Polymers 0.000 description 4
- 239000004811 fluoropolymer Substances 0.000 description 4
- 239000003870 refractory metal Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical group O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PPWPWBNSKBDSPK-UHFFFAOYSA-N [B].[C] Chemical compound [B].[C] PPWPWBNSKBDSPK-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229920001688 coating polymer Polymers 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910021385 hard carbon Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Description
533494 A7 B7 五、發明説明( 發明背景 發明領域 本發明係關於一種半導體加工設備及改善該組件腐蝕抗 性之方法。 相關技藝之敘述 半導體加工之領域中,一般均使用眞空加工室,藉由供 給蝕刻或沉積氣體於眞空室中,且施加R F電場於氣體,對 氣體施加能量成爲電漿態,蝕刻且化學蒸氣沉積(CVD)基 材上之物質。平行板、變壓器耦合電漿(TCPTM)(其亦稱之 爲謗發性耦合電漿(ICP),及電子-粒子迴旋加速器共振 (ECR)反應器及其組件之實例揭示於美國專利第4,340,462; 4,948,458; 5,200,232及5,820,723中。因爲該反應器中電漿 環境之腐蝕性質,及最小粒徑之需求及/或重金屬污染,該 設備之組件極需要呈現高的腐蚀抗性。 半導體基材之加工過程中,基材一般均以基材固定器如 機械夹具及靜電夾具(ESC)固定於眞空室中。該夾具系統及 其組件之實例可見於美國專利第5,262,029及5,838,529號中 。加工氣體可以以各種方式如氣體噴嘴、氣體環、氣體分 布盤等加於室中。謗發性耦合之電漿反應器及其組件之溫 度控制氣體分布盤之實例見於美國專利第5,863,376號中。 除電漿室設備外,半導體基材加工用之其他設備包含傳輸 機構、氣體供給系統、内襯、升降機構、負荷鎖、門機構 、機械臂、固定器、等。該設備之组件會因半導體加工而 遭遇各種腐蝕條件。另外,對於半導體基材如矽晶圓,及 -4 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 533494 A7 .____B7_ 五、發明説明(2 ) 介電材料如用於平板顯示器之玻璃基材之加工高純度要求 之觀點’在該壤境下極需要具有改良腐蚀抗性之組件。 電漿反應器之壁、電極、基材支撐材、固定器及其他組 件一般均使用銘及銘合金。爲避免各金屬組件腐蚀,曾提 出各種技術以各種塗料塗佈鋁之表面。例如,美國專利第 5,641,375號揭示經陽極化,以降低電漿腐蝕及壁磨損之鋁 A壁。’3 75專利敘述錢射或餘刻最終之陽極化層,且須取 代室。美國專利第5,895,586號列出日本申請案公開第62- 1033 79號中在鋁材料上形成a1203,A1C,TiN,TiC,A1N等之 抗腐触薄膜之技術。 美國專利第5,680,013號列出在美國專利第4,491,496號中 揭示之蝕刻室之金屬表面上火焰噴佈Al2〇3技術。該,013號 專利列出鋁及陶瓷塗層如氧化鋁間熱膨脹係數之差異,使 之因熱循環導致龜裂,最後使塗層在腐蝕環境中受損。爲 保護室壁,美國專利第5,366,585、5,798,016及5,885,356號 提出内襯排列。例如,016號專利揭示陶瓷、鋁、鋼及/或石 英内襯’且針對機械加工性之難易以鋁較佳,且對於塗佈 銘以提供銘對電漿之保護,較好爲具有氧化鋁、Sc2〇3或 丫2〇3之塗層,且以Ah〇3較佳。,585專利揭示厚度至少爲 0.005英吋且由固態氧化鋁機製之固定式陶瓷内襯。,585專 利亦提出可藉由火焰噴佈或電漿噴佈氧化鋁在不消耗下層 鋁下沉積陶瓷層之應用。,356專利揭示氧化鋁陶瓷内襯及 晶圓柱用之淡化鋁陶瓷保護。美國專利第5,885,356號揭示 CVD室用之陶瓷内襯材料。 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 533494 A 7 __ B7______ 五、發明説明(3 ) 各種塗層已被提出用於半導體加工設備用之金屬組件。 美國專利第5,879,523號揭示賤射室,其中Al2〇3之熱漱射塗 佈係以其間之選用NiAlx結合塗層塗佈於不銹鋼或鋁金屬上 。美國專利第5,522,932號及5,891,53號揭示其間具有選用之 鎳塗層之基材電漿加工用之裝置之金屬組件用之铑塗層。 美國專利第5,680,013號揭示電漿加工室中之金屬表面用之 未鍵結陶瓷保護,較佳之陶瓷材料爲燒結之AIN,次佳之 材料包含氧化鋁、氟化鎂及氧化鎂。美國專利第5,904,778 號揭示用作室壁、室保護或環繞晶圓之collar之固定SiC上 之SiC CVD塗層。 關於電漿反應器組件如噴霧頭氣體分佈系統,已針對噴 霧頭之材料提出各種提案。例如,美國專利第5,569,356號 揭示矽、石墨或後化矽之噴頭。美國專利第5,494,713號揭 示在鋁電極上形成之耐酸鋁薄膜,及在耐酸鋁薄膜上之碎 塗層膜如氧化矽或氮化矽。,713號專利列出矽塗層膜之厚 度應爲1 0微米或更低,較好約5微米,因爲鋁塗層膜、耐 酸鋁塗層膜及矽塗層膜具有不同之内襯膨脹係數,且在碎 塗層膜之厚度太厚時容易造成龜裂。然而,厚度低於5微米 並不適當’因爲對銘基材之保護不足。美國專利第 4,5:>4,516號揭示不錶鋼、銘、銅等之上喷頭電極。美國專 利第4,612,077號揭示一種鎂之噴頭電極。美國專利第 5,888,907號揭示一種無定型碳、SiC或Α1之噴頭電極。美 國專利第5,006,220號及5,022,979號揭示一種全部由SiC製成 ,或以後爲基礎藉由CVD沉積塗佈SiC得到高純度Sic表面 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)
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533494 A7 ______B7 五、發明説明(4 ) 層之噴頭電極。 針對半導體加工設備之組件用之高純度及腐蝕抗性之需 求’技藝中需要對該組件所用之材料及/或塗層進行改良。 再者,關於室之材料,任一種可增加電漿反應器室之使用 哥命,且因此降低裝置之停工期之材料均可有利的用於降 低半導體晶圓之加工成本。 發明概要 依據本發明之第一目的爲在半導體加工設備組件之表面 上提供一種含抗腐蝕氮化硼/氧化釔塗層之方法。該方法包 含使氮化硼/氧化紀之塗層沉積在加工設備組件之表面上, 以形成抗外邵腐蝕之表面。抗腐蝕之表面意指可保護卞層 之材料免k氣漿▲氣體之腐姓作用,同時使塗層可抗電漿 罜氣體之腐蝕。欲塗佈之製程設備組件之下表面可包括金 屬、陶瓷或聚合物材料,且較佳之材料爲陽極化之鋁。 "較佳具體例中,可在半導體加工設備之表面及含氮化硼/ 氧化釔複合材塗層之間使用一或多層之中間金屬、陶瓷或 聚合物塗層。可塗佈之金屬表面包含電漿室中所用之陽極 化或未陽極化之鋁、不銹鋼、耐火金屬如鉬或其他金屬或 合金。可塗佈之金屬表面包含氧化鋁、Sic、A1N、Si3&、 BC或他電漿可相容之陶瓷材料。可塗佈之聚合物表面包含 氟聚合物,如Teflon®,聚亞醯胺如Vespel®,及其他在溫度 低於20 0°C下於電漿室中使用之聚合物材料。 依據本發明之目的係提供一種金屬組件。該組件包含: (a)金屬表面;(b)金屬表面上選用之第_種中間塗層; 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 533494
(C)在第一中間物塗層上或在金屬表面上選用之第二種中 間塗層;及在該組件上之含氮化爛/氧化纪複合材之塗層, 其可提供抗腐蝕之外表面。第一及第二中間塗層之各層可 A金屬或其合金、陶瓷、聚合物或電漿室反應器中所用之 材料之混合物或複合材。 依據本發明另一目的係提供一種由含氮化硼/氧化釔複合 材之材料製成之半導體加工設備組件。該組件可包含任— 或多層之該設備中用之塗層。 附圖之簡要敛述 本發明之目的及優點由下列其較佳具體例之詳細敘述配 合附圖將變得顯而易見,其中: 圖1爲具有塗佈本發明抗腐蝕塗層組件之電漿反應器室之 簡要剖面圖。 圖2詳細顯示圖1之抗腐蝕塗層之細節。 冬發明較佳具體例之詳細敘沭 本發明提供一種有效之方法,該方法係藉由使用抗腐蝕 塗層對半導體加工裝置,如電漿加工反應器室之組件之金 屬、陶资及I合物表面提供腐敍抗性。該組件包含室壁、 基材支撐物、包含噴頭、檔板、環、噴嘴等之氣體分散系 統、固定器、加熱元件、電漿濾網、内襯、傳輸模組組件 、如機械臂、固定器、室之内及外壁,等。 雖然本發明用於可用於具有金屬、陶瓷或聚合物表面之 任一類型組件,但爲方便説明起見,本發明將參考美國專 利第5,820,723號中敘述之裝置詳細說明,該專利在此提出 -8- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 裝 訂
533494 A7 _______B7 五、發明説明(6 ) ""一 ' - 供參考。 圖1說明眞2加工反應器室10’包含對基材提供靜電 夾緊力以及對基材提供RF偏斜同時以He0冷卻之基材支 撐器70。聚集環72將電漿圍在基材上之區域中。使室中之 電漿維持高密度(例如1011- 1〇12離子/cm3)之能量源,如以 適當之RF電源施加電力以提供高密度電漿之天線4〇係配置 在反應器室10之上方。該室包含藉由中心配置在室之底部 之眞空抽S槽20將室抽眞空,使室之内部3〇維持在所需壓 力(例如低於50 mTorr,一般爲1-20 mTorr)之適用眞空泵浦 裝置。 裝置在天線40及加工室10之間之均勻厚度之實質平面之 介電視窗50在加工室10之上方形成眞空壁。視窗2〇之下方 裝置氣體分佈板52 ’且包含開口如圓形之洞,以輸送氣體 供給室之加工氣體到達室10中。圓錐形内襯5 4自氣體分佈 板延伸,且環繞基材支撐材7 0。 操作時,係將半導體基材6 0如矽晶圓置於基材支撐材7 〇 之上,且一般係藉由靜電夾具74固定,同時使用He回冷。 接著藉由使製程氣體通過視窗50及氣體分佈板52間之間隙 ,將加工氣體供給至眞空加工室10中。適當之氣體分散板 排列(亦即噴頭)係揭示於美國專利第5,824,605; 6,〇48,798; 及5,863,376號中,該揭示均在此提出供參考。例如,雖然 圖1中之視窗及氣體分散板排列爲平面且厚度均勻,但非平 面及/或不均勻厚度之形狀亦可用作視窗及/或玻璃分散板 。藉由對天線4 0施加適當之R F電力激發基材及視窗間之空 本紙張尺度適用中國國家標準((:1^8) A4規格(210 X 297公釐) 533494 A7 ----— —_B7 五、發明説明(1 ) " " *~-- 間中之高密度電漿。 室壁2 8如陽極化或未締陽揣仆+ ^雜 '木,、文險極化I鋁壁及金屬、陶资或聚 合物組件如基材支撑材7〇、固定件56、内觀54等(其均暴 露於電漿中且呈現腐蝕現象)均可依本發明塗佈,因此可避 免在電漿1:操作過程中需將其遮蔽。可塗佈之金屬及/或合 金之實例包含陽極化或未經陽極化之銘及其合金、不鐵鋼 、耐火金屬如W及Μο及其合金、銅及其合金等。可塗佈之 陶t:表面實例包含氧化!g、SlC,A1N,叫队,%及Τι〇2。 市售可塗佈之聚合物材料實例包含氟聚合物如丁⑷⑽③,聚 亞醯胺如Vespel®,及其他在溫度達2〇(rc時用於電漿室中 之聚合物材料。較佳具體例中,欲塗佈之組件爲具有陽極 化或未將陽極化鋁表面29之室壁28。本發明之塗層可使用 鋁合金,不管其组成(因此除高純度鋁外,可使用更經濟之 鋁合金)、晶粒結構或表面條件。下列敘述中,欲塗佈組件 之實例爲具有第一選用之中間塗層8〇之鋁金屬室壁28、第 二選用之間塗層9 0及含氮化硼/氧化釔複合材之塗層1〇〇, 如圖2中之説明。 爲確保塗佈材料之良好黏著,鋁基材28之表面在塗佈前 車父好充分的清潔’以移除表面物質如氧化物或油脂。另外 ,最好使基材表面變粗糙,使基材表面陽極化,且在塗佈 任一所需塗層前使陽極化之基材表面變粗。 依據本發明,第一中間塗層8 0可以以一般技術,視情況 塗佈在鋁側壁2 8上。選用之第一中間塗層8 〇足夠厚以便附 著於基材上,且在形成選用之第二中間塗層9〇或下述之含 -10 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 533494 A7 ___ B7 五、發明説明(8 ) 氮化硼/氧化纪複合材塗層之前進一步加工。第一中間塗層 80可具有任一適當之厚度如厚度至少約〇 〇〇1英吋,較好爲 約0.001至約0.25英吋,更好在o.ooi至〇.1英吋之間,且最 好爲0.001至0.05英吋。 將選用之第一中間塗層8 0沉積在鋁基材2 8上之後,可以 以任一適用之技術使電鍍終止或變粗,接著覆蓋塗佈第二 選用之塗層90或含氮化硼/氧化釔複合材之塗層1〇〇。打粗 之層8 0提供特別好之結合。期望上,第二中間塗層9 〇對塗 層80賦予高的機械壓縮強度,且使塗層9〇中裂缝之形成爲 最小。 選用之第二中間塗層90夠厚以黏著第一中間塗層8〇,且 再形成任一額外之中間塗層或下述之外部含氮化硼/氧化釔 複合材塗層1〇〇之前進一步加工。第二中間塗層可具有 任一適當之厚度如厚度至少爲約〇·〇〇1英吋,較好爲約〇 〇〇1 至約0·25英吋,更好在0.001至〇 1英吋之間,且最好爲 〇·〇〇1 至 0.05 英吋。 第一及第二中間塗層可由任一種或多種一般電漿加工室 中所用之材料製成。該材料之實例包含金屬、陶瓷及聚合 物。最佳之金屬包含任一種或多種耐火金屬、含該金屬之 複合材或合金。最佳之陶瓷包含Al2〇3, Sic,%%,BC, A1N,Ti〇2等。最佳之聚合物包含氟聚合物如,聚 亞醯胺如Vespel®,及其他在溫度達2〇〇。(:時用於電漿室中 之聚合物材料。可用作中間層之特殊材料亦包含含填料之 材料,含其他硬質碳之材料如含氮化硼/氧化釔複合材之材 -11- 本紙張尺度適用中國國家標準(CNS) A4規格(210 x 297公釐) 533494 A7 B7 五 發明説明(9 料;例如給、鈕、鈦及/或矽之碳化物、硼化物、氮化物及 /或碳氮化物;碳化硼;氮化硼;碳氮化硼;氧化結;氧化 I乙或任一上述材料之混合物。 期望選用之第一及第二中間層80及90爲上述材料之任一 種使塗層依所需之性質爲相同或不同。亦期望可使用相 同或不同材料之額外中間塗層如第三、第四或第五中間塗 層。 裝
含氮化硼/氧化釔複合材之塗層1〇〇沉積在選用之第二中 間塗層90上,或在選用之第一中間塗層8〇上,或在鋁基材 28上。含氮化硼/氧化釔塗層之厚度期望至少爲〇 〇〇1英吋 ’較好爲約0.001至約〇·25英吋,更好在〇·〇〇ι至〇1英吋之 間,且最好爲0.001至〇〇5英吋。含氮化硼/氧化釔複合材之 塗層1 〇〇之厚度可經選擇,使之與反應室中碰到之電漿環境 (例如蚀刻、CVD等)相容。該含氮化硼/氧化釔複合材之層 可塗佈在上述反應器室或組件之全部或部分上。最好,氮 化爛/氧化釔複合材塗層之厚度爲可對下層尤其是基材,在 暴露於腐蚀之室氣體中時可提供侵蝕及/或腐蝕保護之厚度。 本發明之含氮化硼/氧化釔複合材之塗層100含氮化硼及 氧化釔二者。複合材之氮化硼成分可爲任一種六面體,立 方體或其混合物。最好氮化硼成分爲1 〇〇%立方體相或含立 方體相之比例超過6 0重量%,較好超過8 〇重量%,且最好 超過90重量%。氮化硼之立方體形式具有較高之密度,極 硬且可再高溫極高壓下由六面體製成。相反的,氮化硼可 爲100%六面體相。 -12- 本、紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 533494 A7 B7 五、發明説明(1〇 ) --- 複合材之以成分含量可爲全部複合材之約1%至99%之間 ,杈好約4 0至9 9 %足間,更好爲約6 〇至8 〇 %之間。氮化硼 成分之含量可爲全部複合材之約1%至99%,較好約1至 6 0 %,且更好約2 〇至4 0 %之間。 複合材可包含其量達約5 〇%全部複合材或更高之其他保 濩性材料。較好,氮化硼、氧化釔或氧化锆形成該複合材 中之連1基貝相。更好,本發明之複合材包含約丄至W重 之額外材料,且更好在約1至2〇重量%之額外材料,且 最好爲約1至1〇重量%之額外材料(以複合材爲準)。 汶材料可包含一種或多種電將加工室中所用之材料。該 材料之實例包含任-種或多種金屬、陶资及聚合物。最佳 之金屬包含任一種或多種耐火金屬、含該金屬之複合材或 ^金:最佳之陶资包含Al2〇3, SlC,Si3N4, BC,Α1Ν,τκ)2 等。取佳<聚合物包含氟聚合物如Teflon<§)、聚亞醯胺如 VespefK在達到20(rc之溫度下可用於電漿室中之其他聚 合物材料。相信大部分所需之材料將單獨包含氮化硼/氧化 釔複合材之材料;例如給、姮、鈦及/或矽之碳化物、硼化 物、氮化物及/或碳氮化物;碳化硼;氮化硼;碳氮化硼; 氧化锆;氧化釔或任一上述材料之混合物。 本發明之含氮化硼/氧化釔複合材塗層1〇〇可藉由已知之 塗佈技術,如熱噴佈、電漿噴佈,化學蒸氣沉積、昇華、 雷射蒸發、濺射、濺射沉積、離子束塗佈、噴霧塗佈、浸 潰塗佈、蒸發、滾塗、刷塗、等沉積在所需表面上。期望 具有或不含其他材料之中間層之多層含氮化硼/氧化釔複合 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) -13- --------- B? 五、發明説明(11 ) 材塗層使用任一種適用之技術沉積在所需表面上。 依本發明之另一目的係提供一種由含氮化硼/氧化釔複合 材材料製成之半導體加工設備組件。該組件可包含一般用 於該組件中之一或多層塗層。 藉由使用本發明之含氮化硼/氧化釔複合材塗層或組件, 車又好得到超硬、柷腐姓之表面。該塗層或組件較好不含與 加工主氣體反應之材料,且爲化學惰性,使其顆粒污染低 或/又有’腐姓低或沒有、金屬之污染低或沒有,及/或揮發 性蝕刻產物少或沒有。 較好含氮化硼/氧化釔複合材之塗層或組件置於會或不會 暴露在電漿環境中之區域,如零件與電漿直接接觸,或零 件在室組件之中,如内襯等,以避免在反應器室中加工之 半導體基材受到金屬之污染。最好限制或排除過度金屬之 粉塵;例如週期表中元素2 1至2 9 (銳至銅)、3 9至4 7 (釔至 銀)、57至79(鑭至金)及自89(封)之所有已知元素之一種 或多種。因此,依據本發明之一優點,可藉由壓制侵蝕或 腐蝕形成之該粉塵降低沉積之薄膜中不滿意之蝕刻或不希 望形成之針孔。 雖然本發明已經參考其特定之具體例詳細敘述,但熟習 本技藝者應了解可進行各種改變及改良及使用對等物,且 均不離本發明之範圍。 -14- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公董)
Claims (1)
- 533494 8 8 8 8 A B c D 第〇9〇13〇001號專利申請案 中文申請專利範圍替換本(92年1月) 六、申請專利範圍 — 1 · 種塗饰半導體加工設備之組件表面之方法,包括: (a)視情況將第一種中間塗層沉積在半導體加工設備 之組件表面上; (b )視情況將第二種中間塗層沉積在該第一中間層或 該表面上、及 (c)將含氮化测/氧化紀複合材之塗層沉積在該組件上 ’形成外部抗腐蝕之表面。 2 ·如申凊專利範圍第1項之方法,其中該組件知該表面包 括金屬、陶瓷或聚合物表面。 3 ·如申請專利範圍第2項之方法,其中該表面為陽極化之 鋁。 4.如申凊專利範圍第1項之方法,其中該第一中間塗層為 非選用。 5 ·如申請專利範圍第4項之方法,其中該第一中間塗層包 括金屬、陶瓷或聚合物塗層。 6 ·如申請專利範圍第1項之方法,其中該組件包括電漿蝕 刻室之室壁。 7 ·如申凊專利範圍第1項之方法,尚包括在該組件上形成 粗縫表面,將該含氮化硼/氧化釔複合材之塗層沉積在該 粗糙表面之上。 8 ·如申請專利範圍第1項之方法,其中該含氮化侧/氧化乾 複合材之塗層包含立方體相、六面體相或其混合物。 9 ·如申请專利範圍第1項之方法,其中含氮化/氧化紀複 合材之塗層包括至少一種除氮化硼或氧化釔之材料。 本紙張尺度適财_家鮮(CNS) A4規格(21Qχ 297公爱) 533494 Λ BCD 、申請專利範圍 1 〇 ·如申請專利範圍第9項之方法,並 ;陶瓷及聚合物。 "以八才料為金屬 11·如申請專利範圍第10項之方法, 錘。 其中藏其他材料為氧化 U.如中請專利範圍第1G項之料,其中該其 化鈦、硼化鈦、氮化鈦、碳化 十匕》反 混合物。 ㈣石夕、氮切或其 13. 如中請專利範圍第9項之方法,其中該氧錢包括約 至約8 0重量%之該複合材。 14. 如申請專利·化項之方法,其中該氮化删包括該複 合材之約2 0至約4 0重量%。 15·如申請專利範圍第1項之方法,其中該含氮化蝴/氧化紀 複合材之塗層係以化學蒸氣沉積、電漿噴佈、昇華、雷 射蒸發、賤射,藏射沉積、離子束塗佈、噴霧塗怖、浸 潰塗佈、蒸發塗佈、滾動塗佈或刷塗沉積。 16. —種半導體加工設備之組件,包括: (a) 表面; (b) 在該表面上之選用第一中間塗層; (c) 在該弟一中間塗層或該表面上之選用第二中間塗 層;及 (d) 在該組件上之含氮化硼/氧化釔複合材之塗層,形 成外部抗腐姓表面。 1 7 ·如申請專利範圍第丨6項之組件,其中該表面為金屬、陶 竞或聚合物表面。 -2- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)圍 範 A B c D 其中該表面為陽極化之 其中該組件包括電漿| ,其中該含氮化硼/氧| 六面體相或其混合物。 其中該含氮化硼/氧十 其中該其他材料為金 其中該其他材料為氧 其中該氧化釔包括# 其中該氮化硼包括t3 含氮化硼/氧化紀複合材之塗層或中間塗> 尚包括一層或多層 •如申凊專利範圍第1 7項之組件 鋁。 •如申請專利範圍第1 6項之組件,其中該第一中間塗層^ 選用。 2 〇 ·如申請專利範圍第1 6項之組件 刻室之室壁。 •如申請專利範圍第1 2項之組件 氣複合材之塗層包含立方體相、 2 ·如申請專利範圍第1 6項之組件 · .。^ ,刊 乾複合材之塗層包括至少一種除氮化硼及氧化釔以外 材料。 2 3 ·如申請專利範圍第2 2項之組件 :陶瓷及聚合物。 2 4.如申請專利範圍第23項之組件 锆。 25.如申請專利範圍第23項之組件,其中該其他材料包含 化鈦、硼化鈦、氮化鈦、碳化矽、硼化矽、氮化矽二 混合物。 " S 2 6 ·如申請專利範圍第丨6項之組件 至約80重量%之該複合材。 2 7 ·如申請專利範圍第1 6項之組件 合材之約2 0至約4 0重量%。 2 8 ·如申請專利範圍第1 6項之組件-3 - A B c D 533494 六、申請專利範圍 2 9 .如申請專利範圍第1 6項之組件,其中氮化硼或以形成在 含該氮化硼/氧化釔之塗層中之連續基質相。 30. —種具有至少一暴露於設備中之電漿中之表面之半導體 加工設備組件,該組件包括形成暴露於設備中之電漿中之 厚度至少0.001英付之含氮化测/氧化乾複合材之材料。 3 1 .如申請專利範圍第3 0項之組件,其中該全部之組件係由 該含該氮化硼/氧化釔複合材之材料組成。 -4- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X297公釐)
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- 2001-11-23 CN CN018215572A patent/CN1484712B/zh not_active Expired - Fee Related
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TWI465155B (zh) * | 2005-07-14 | 2014-12-11 | Univ Tohoku | 半導體製造裝置用構件及其洗淨方法 |
TWI514464B (zh) * | 2012-04-25 | 2015-12-21 |
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WO2002053799A1 (en) | 2002-07-11 |
US6613442B2 (en) | 2003-09-02 |
JP2004523649A (ja) | 2004-08-05 |
US20020086554A1 (en) | 2002-07-04 |
JP4634005B2 (ja) | 2011-02-16 |
US6773751B2 (en) | 2004-08-10 |
KR100830068B1 (ko) | 2008-05-16 |
US20040137147A1 (en) | 2004-07-15 |
EP1364075A1 (en) | 2003-11-26 |
CN1484712B (zh) | 2010-04-21 |
KR20030066756A (ko) | 2003-08-09 |
CN1484712A (zh) | 2004-03-24 |
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