JP2004521052A - 高純度・低比抵抗の静電チャック - Google Patents

高純度・低比抵抗の静電チャック Download PDF

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Publication number
JP2004521052A
JP2004521052A JP2001543466A JP2001543466A JP2004521052A JP 2004521052 A JP2004521052 A JP 2004521052A JP 2001543466 A JP2001543466 A JP 2001543466A JP 2001543466 A JP2001543466 A JP 2001543466A JP 2004521052 A JP2004521052 A JP 2004521052A
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Japan
Prior art keywords
temperature
atmosphere
polycrystalline
green body
nitrogen
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Withdrawn
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JP2001543466A
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English (en)
Japanese (ja)
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JP2004521052A5 (enExample
Inventor
ディバカー，ラメシュ
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Saint Gobain Ceramics and Plastics Inc
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Saint Gobain Ceramics and Plastics Inc
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Application filed by Saint Gobain Ceramics and Plastics Inc filed Critical Saint Gobain Ceramics and Plastics Inc
Publication of JP2004521052A publication Critical patent/JP2004521052A/ja
Publication of JP2004521052A5 publication Critical patent/JP2004521052A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Products (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2001543466A 1999-12-09 2000-12-05 高純度・低比抵抗の静電チャック Withdrawn JP2004521052A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/458,278 US6723274B1 (en) 1999-12-09 1999-12-09 High-purity low-resistivity electrostatic chucks
PCT/US2000/042555 WO2001042163A2 (en) 1999-12-09 2000-12-05 High-purity low-resistivity electrostatic chucks

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009030499A Division JP2009173537A (ja) 1999-12-09 2009-02-12 高純度・低比抵抗の静電チャック

Publications (2)

Publication Number Publication Date
JP2004521052A true JP2004521052A (ja) 2004-07-15
JP2004521052A5 JP2004521052A5 (enExample) 2005-04-14

Family

ID=23820126

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2001543466A Withdrawn JP2004521052A (ja) 1999-12-09 2000-12-05 高純度・低比抵抗の静電チャック
JP2009030499A Pending JP2009173537A (ja) 1999-12-09 2009-02-12 高純度・低比抵抗の静電チャック

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009030499A Pending JP2009173537A (ja) 1999-12-09 2009-02-12 高純度・低比抵抗の静電チャック

Country Status (8)

Country Link
US (1) US6723274B1 (enExample)
JP (2) JP2004521052A (enExample)
KR (1) KR20020059439A (enExample)
CN (1) CN1313420C (enExample)
AU (1) AU4516201A (enExample)
DE (1) DE10085278B4 (enExample)
GB (1) GB2373497A (enExample)
WO (1) WO2001042163A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010120822A (ja) * 2008-11-21 2010-06-03 Ngk Insulators Ltd 窒化アルミニウム焼結体、その製法及びそれを用いた静電チャック
JP2014214069A (ja) * 2013-04-27 2014-11-17 京セラ株式会社 半導電性セラミックスおよび半導電性セラミックスの製造方法
JP2023518438A (ja) * 2020-03-27 2023-05-01 烟台睿瓷新材料技術有限公司 多層複合セラミックスプレート及びその製造方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU4516701A (en) * 1999-12-09 2001-06-18 Saint-Gobain Ceramics And Plastics, Inc. Electrostatic chucks with flat film electrode
US6603650B1 (en) * 1999-12-09 2003-08-05 Saint-Gobain Ceramics And Plastics, Inc. Electrostatic chuck susceptor and method for fabrication
TWI243158B (en) * 2000-12-21 2005-11-11 Ngk Insulators Ltd Aluminum nitride sintered bodies
US7369393B2 (en) * 2004-04-15 2008-05-06 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chucks having barrier layer
US8187525B2 (en) * 2007-08-31 2012-05-29 Corning Incorporated Method of firing green bodies into porous ceramic articles
TWI475594B (zh) 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
CN102449754B (zh) 2009-05-15 2015-10-21 恩特格林斯公司 具有聚合物突出物的静电吸盘
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
US8580593B2 (en) * 2009-09-10 2013-11-12 Micron Technology, Inc. Epitaxial formation structures and associated methods of manufacturing solid state lighting devices
WO2011149918A2 (en) 2010-05-28 2011-12-01 Entegris, Inc. High surface resistivity electrostatic chuck
WO2012012384A1 (en) * 2010-07-20 2012-01-26 Hexatech, Inc. Polycrystalline aluminum nitride material and method of production thereof
JP6159982B2 (ja) * 2012-06-28 2017-07-12 日本特殊陶業株式会社 静電チャックの製造方法
KR102339550B1 (ko) * 2017-06-30 2021-12-17 주식회사 미코세라믹스 질화 알루미늄 소결체 및 이를 포함하는 반도체 제조 장치용 부재

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JPS5944797A (ja) 1982-09-07 1984-03-13 増田　閃一 物体の静電的処理装置
JPS60151280A (ja) * 1984-01-19 1985-08-09 日本電気株式会社 窒化アルミニウム焼結体の製造方法
DE3608326A1 (de) 1986-03-13 1987-09-17 Kempten Elektroschmelz Gmbh Praktisch porenfreie formkoerper aus polykristallinem aluminiumnitrid und verfahren zu ihrer herstellung ohne mitverwendung von sinterhilfsmitteln
US4778778A (en) * 1987-06-03 1988-10-18 Keramont Advanced Ceramic Products Corporation Process for the production of sintered aluminum nitrides
JP2665242B2 (ja) 1988-09-19 1997-10-22 東陶機器株式会社 静電チャック
JPH0617214B2 (ja) 1989-12-29 1994-03-09 ナショナル サイエンス カウンシル 超微粒子な窒化アルミニウム粉末の製造方法
US5280156A (en) 1990-12-25 1994-01-18 Ngk Insulators, Ltd. Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means
US5306895A (en) 1991-03-26 1994-04-26 Ngk Insulators, Ltd. Corrosion-resistant member for chemical apparatus using halogen series corrosive gas
EP0506537A1 (en) 1991-03-28 1992-09-30 Shin-Etsu Chemical Co., Ltd. Electrostatic chuck
JPH06737A (ja) 1991-03-29 1994-01-11 Shin Etsu Chem Co Ltd 静電チャック基板
JPH0659008A (ja) 1992-08-06 1994-03-04 Sumitomo Electric Ind Ltd 物性測定装置およびその測定方法
US5800618A (en) 1992-11-12 1998-09-01 Ngk Insulators, Ltd. Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof
WO1995014308A1 (en) 1993-11-18 1995-05-26 Ngk Insulators, Ltd. Electrode for generating plasma, element for burying electrode, and method for manufacturing the electrode and the element
US5413360A (en) 1992-12-01 1995-05-09 Kyocera Corporation Electrostatic chuck
US5320990A (en) * 1993-03-30 1994-06-14 The Dow Chemical Company Process for sintering aluminum nitride to a high thermal conductivity and resultant sintered bodies
JPH06326175A (ja) 1993-04-22 1994-11-25 Applied Materials Inc 集積回路処理装置において使用されるウエハサポートの誘電材への保護被覆とその形成方法
US5457075A (en) * 1993-05-11 1995-10-10 Hitachi Metals, Ltd. Sintered ceramic composite and molten metal contact member produced therefrom
EP0635870A1 (en) 1993-07-20 1995-01-25 Applied Materials, Inc. An electrostatic chuck having a grooved surface
US5541145A (en) 1993-12-22 1996-07-30 The Carborundum Company/Ibm Corporation Low temperature sintering route for aluminum nitride ceramics
JPH08507196A (ja) 1994-01-31 1996-07-30 アプライド マテリアルズ インコーポレイテッド 共形な絶縁体フィルムを有する静電チャック
US5671116A (en) 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
US5677253A (en) 1995-03-30 1997-10-14 Kyocera Corporation Wafer holding member
US5886863A (en) 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
US5633073A (en) 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
US5817406A (en) 1995-07-14 1998-10-06 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and brazing material connection
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JP3457477B2 (ja) 1995-09-06 2003-10-20 日本碍子株式会社 静電チャック
JP3670416B2 (ja) * 1995-11-01 2005-07-13 日本碍子株式会社 金属包含材および静電チャック
US6017485A (en) * 1996-03-28 2000-01-25 Carborundum Corporation Process for making a low electrical resistivity, high purity aluminum nitride electrostatic chuck
US5764471A (en) 1996-05-08 1998-06-09 Applied Materials, Inc. Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck
US5708557A (en) 1996-08-22 1998-01-13 Packard Hughes Interconnect Company Puncture-resistant electrostatic chuck with flat surface and method of making the same
US5958813A (en) 1996-11-26 1999-09-28 Kyocera Corporation Semi-insulating aluminum nitride sintered body
US5705450A (en) 1996-12-17 1998-01-06 The Dow Chemical Company A1N sintered body containing a rare earth aluminum oxynitride and method to produce said body
JP3790000B2 (ja) 1997-01-27 2006-06-28 日本碍子株式会社 セラミックス部材と電力供給用コネクターとの接合構造
JP3954177B2 (ja) 1997-01-29 2007-08-08 日本碍子株式会社 金属部材とセラミックス部材との接合構造およびその製造方法
US6303879B1 (en) 1997-04-01 2001-10-16 Applied Materials, Inc. Laminated ceramic with multilayer electrodes and method of fabrication
JP3670444B2 (ja) 1997-06-06 2005-07-13 日本碍子株式会社 窒化アルミニウム基複合体、電子機能材料、静電チャックおよび窒化アルミニウム基複合体の製造方法
JP3746594B2 (ja) 1997-06-20 2006-02-15 日本碍子株式会社 セラミックスの接合構造およびその製造方法
US5909355A (en) 1997-12-02 1999-06-01 Applied Materials, Inc. Ceramic electrostatic chuck and method of fabricating same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010120822A (ja) * 2008-11-21 2010-06-03 Ngk Insulators Ltd 窒化アルミニウム焼結体、その製法及びそれを用いた静電チャック
JP2014214069A (ja) * 2013-04-27 2014-11-17 京セラ株式会社 半導電性セラミックスおよび半導電性セラミックスの製造方法
JP2023518438A (ja) * 2020-03-27 2023-05-01 烟台睿瓷新材料技術有限公司 多層複合セラミックスプレート及びその製造方法
JP7573641B2 (ja) 2020-03-27 2024-10-25 烟台睿瓷新材料技術有限公司 多層複合セラミックスプレート及びその製造方法
US12195402B2 (en) 2020-03-27 2025-01-14 Raycer Advanced Materials Technology Co., Ltd Multi-layer composite ceramic plate and manufacturing method thereof

Also Published As

Publication number Publication date
GB0215873D0 (en) 2002-08-14
WO2001042163A3 (en) 2002-03-07
CN1407956A (zh) 2003-04-02
WO2001042163A2 (en) 2001-06-14
DE10085278T1 (de) 2002-12-12
CN1313420C (zh) 2007-05-02
US6723274B1 (en) 2004-04-20
DE10085278B4 (de) 2008-10-16
GB2373497A (en) 2002-09-25
JP2009173537A (ja) 2009-08-06
KR20020059439A (ko) 2002-07-12
AU4516201A (en) 2001-06-18

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