CN1313420C - 降低主要由氮化铝组成的本体的体积电阻系数的方法 - Google Patents

降低主要由氮化铝组成的本体的体积电阻系数的方法 Download PDF

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Publication number
CN1313420C
CN1313420C CNB008168083A CN00816808A CN1313420C CN 1313420 C CN1313420 C CN 1313420C CN B008168083 A CNB008168083 A CN B008168083A CN 00816808 A CN00816808 A CN 00816808A CN 1313420 C CN1313420 C CN 1313420C
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CN
China
Prior art keywords
atmosphere
nitrogen
temperature
aluminum nitride
volume resistivity
Prior art date
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Expired - Lifetime
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CNB008168083A
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English (en)
Chinese (zh)
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CN1407956A (zh
Inventor
R·迪瓦卡
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Saint Gobain Ceramics and Plastics Inc
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Saint Gobain Industrial Ceramics Inc
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Publication of CN1407956A publication Critical patent/CN1407956A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Products (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
CNB008168083A 1999-12-09 2000-12-05 降低主要由氮化铝组成的本体的体积电阻系数的方法 Expired - Lifetime CN1313420C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/458,278 1999-12-09
US09/458,278 US6723274B1 (en) 1999-12-09 1999-12-09 High-purity low-resistivity electrostatic chucks

Publications (2)

Publication Number Publication Date
CN1407956A CN1407956A (zh) 2003-04-02
CN1313420C true CN1313420C (zh) 2007-05-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008168083A Expired - Lifetime CN1313420C (zh) 1999-12-09 2000-12-05 降低主要由氮化铝组成的本体的体积电阻系数的方法

Country Status (8)

Country Link
US (1) US6723274B1 (enExample)
JP (2) JP2004521052A (enExample)
KR (1) KR20020059439A (enExample)
CN (1) CN1313420C (enExample)
AU (1) AU4516201A (enExample)
DE (1) DE10085278B4 (enExample)
GB (1) GB2373497A (enExample)
WO (1) WO2001042163A2 (enExample)

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GB2375231A (en) * 1999-12-09 2002-11-06 Saint Gobain Ceramics Electrostatic chucks with flat film electrode
US6603650B1 (en) * 1999-12-09 2003-08-05 Saint-Gobain Ceramics And Plastics, Inc. Electrostatic chuck susceptor and method for fabrication
TWI243158B (en) * 2000-12-21 2005-11-11 Ngk Insulators Ltd Aluminum nitride sintered bodies
US7369393B2 (en) * 2004-04-15 2008-05-06 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chucks having barrier layer
US8187525B2 (en) * 2007-08-31 2012-05-29 Corning Incorporated Method of firing green bodies into porous ceramic articles
TWI475594B (zh) 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
JP5180034B2 (ja) * 2008-11-21 2013-04-10 日本碍子株式会社 窒化アルミニウム焼結体、その製法及びそれを用いた静電チャック
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
SG176059A1 (en) 2009-05-15 2011-12-29 Entegris Inc Electrostatic chuck with polymer protrusions
US8580593B2 (en) * 2009-09-10 2013-11-12 Micron Technology, Inc. Epitaxial formation structures and associated methods of manufacturing solid state lighting devices
WO2011149918A2 (en) 2010-05-28 2011-12-01 Entegris, Inc. High surface resistivity electrostatic chuck
WO2012012384A1 (en) * 2010-07-20 2012-01-26 Hexatech, Inc. Polycrystalline aluminum nitride material and method of production thereof
JP6159982B2 (ja) * 2012-06-28 2017-07-12 日本特殊陶業株式会社 静電チャックの製造方法
JP6039497B2 (ja) * 2013-04-27 2016-12-07 京セラ株式会社 半導電性セラミックスおよび半導電性セラミックスの製造方法
KR102339550B1 (ko) * 2017-06-30 2021-12-17 주식회사 미코세라믹스 질화 알루미늄 소결체 및 이를 포함하는 반도체 제조 장치용 부재
CN111620701B (zh) * 2020-03-27 2022-05-13 烟台睿瓷新材料技术有限公司 一种多层复合陶瓷盘及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0771772A2 (en) * 1995-11-01 1997-05-07 Ngk Insulators, Ltd. Aluminium nitride sintered bodies and their manufacture
WO1997035816A1 (en) * 1996-03-28 1997-10-02 Carborundum Corporation Controlled dielectric loss aluminum nitride
EP0882689A2 (en) * 1997-06-06 1998-12-09 Ngk Insulators, Ltd. Aluminum nitride based composite body, electronic functional material, electrostatic chuck and method of producing aluminum nitride based composition body

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JPS60151280A (ja) * 1984-01-19 1985-08-09 日本電気株式会社 窒化アルミニウム焼結体の製造方法
DE3608326A1 (de) 1986-03-13 1987-09-17 Kempten Elektroschmelz Gmbh Praktisch porenfreie formkoerper aus polykristallinem aluminiumnitrid und verfahren zu ihrer herstellung ohne mitverwendung von sinterhilfsmitteln
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JPH0617214B2 (ja) 1989-12-29 1994-03-09 ナショナル サイエンス カウンシル 超微粒子な窒化アルミニウム粉末の製造方法
US5280156A (en) 1990-12-25 1994-01-18 Ngk Insulators, Ltd. Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means
EP1120817B8 (en) 1991-03-26 2007-10-10 Ngk Insulators, Ltd. Use of a corrosion-resistant member
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JPH06737A (ja) 1991-03-29 1994-01-11 Shin Etsu Chem Co Ltd 静電チャック基板
JPH0659008A (ja) 1992-08-06 1994-03-04 Sumitomo Electric Ind Ltd 物性測定装置およびその測定方法
US5800618A (en) 1992-11-12 1998-09-01 Ngk Insulators, Ltd. Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof
US5413360A (en) 1992-12-01 1995-05-09 Kyocera Corporation Electrostatic chuck
US5320990A (en) * 1993-03-30 1994-06-14 The Dow Chemical Company Process for sintering aluminum nitride to a high thermal conductivity and resultant sintered bodies
JPH06326175A (ja) 1993-04-22 1994-11-25 Applied Materials Inc 集積回路処理装置において使用されるウエハサポートの誘電材への保護被覆とその形成方法
US5457075A (en) * 1993-05-11 1995-10-10 Hitachi Metals, Ltd. Sintered ceramic composite and molten metal contact member produced therefrom
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US5671116A (en) 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
US5677253A (en) 1995-03-30 1997-10-14 Kyocera Corporation Wafer holding member
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US5633073A (en) 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
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US5764471A (en) 1996-05-08 1998-06-09 Applied Materials, Inc. Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck
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US5958813A (en) 1996-11-26 1999-09-28 Kyocera Corporation Semi-insulating aluminum nitride sintered body
US5705450A (en) 1996-12-17 1998-01-06 The Dow Chemical Company A1N sintered body containing a rare earth aluminum oxynitride and method to produce said body
JP3790000B2 (ja) 1997-01-27 2006-06-28 日本碍子株式会社 セラミックス部材と電力供給用コネクターとの接合構造
JP3954177B2 (ja) 1997-01-29 2007-08-08 日本碍子株式会社 金属部材とセラミックス部材との接合構造およびその製造方法
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0771772A2 (en) * 1995-11-01 1997-05-07 Ngk Insulators, Ltd. Aluminium nitride sintered bodies and their manufacture
WO1997035816A1 (en) * 1996-03-28 1997-10-02 Carborundum Corporation Controlled dielectric loss aluminum nitride
EP0882689A2 (en) * 1997-06-06 1998-12-09 Ngk Insulators, Ltd. Aluminum nitride based composite body, electronic functional material, electrostatic chuck and method of producing aluminum nitride based composition body

Also Published As

Publication number Publication date
GB2373497A (en) 2002-09-25
WO2001042163A2 (en) 2001-06-14
US6723274B1 (en) 2004-04-20
WO2001042163A3 (en) 2002-03-07
GB0215873D0 (en) 2002-08-14
JP2004521052A (ja) 2004-07-15
CN1407956A (zh) 2003-04-02
AU4516201A (en) 2001-06-18
DE10085278B4 (de) 2008-10-16
DE10085278T1 (de) 2002-12-12
JP2009173537A (ja) 2009-08-06
KR20020059439A (ko) 2002-07-12

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