GB2373497A - High-purity low-resistivity electrostatic chucks - Google Patents

High-purity low-resistivity electrostatic chucks Download PDF

Info

Publication number
GB2373497A
GB2373497A GB0215873A GB0215873A GB2373497A GB 2373497 A GB2373497 A GB 2373497A GB 0215873 A GB0215873 A GB 0215873A GB 0215873 A GB0215873 A GB 0215873A GB 2373497 A GB2373497 A GB 2373497A
Authority
GB
United Kingdom
Prior art keywords
electrode
volume resistivity
chuck
electrostatic chucks
purity low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0215873A
Other languages
English (en)
Other versions
GB0215873D0 (en
Inventor
Ramesh Divakar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Ceramics and Plastics Inc
Original Assignee
Saint Gobain Ceramics and Plastics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Ceramics and Plastics Inc filed Critical Saint Gobain Ceramics and Plastics Inc
Publication of GB0215873D0 publication Critical patent/GB0215873D0/en
Publication of GB2373497A publication Critical patent/GB2373497A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Products (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
GB0215873A 1999-12-09 2000-12-05 High-purity low-resistivity electrostatic chucks Withdrawn GB2373497A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/458,278 US6723274B1 (en) 1999-12-09 1999-12-09 High-purity low-resistivity electrostatic chucks
PCT/US2000/042555 WO2001042163A2 (en) 1999-12-09 2000-12-05 High-purity low-resistivity electrostatic chucks

Publications (2)

Publication Number Publication Date
GB0215873D0 GB0215873D0 (en) 2002-08-14
GB2373497A true GB2373497A (en) 2002-09-25

Family

ID=23820126

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0215873A Withdrawn GB2373497A (en) 1999-12-09 2000-12-05 High-purity low-resistivity electrostatic chucks

Country Status (8)

Country Link
US (1) US6723274B1 (enExample)
JP (2) JP2004521052A (enExample)
KR (1) KR20020059439A (enExample)
CN (1) CN1313420C (enExample)
AU (1) AU4516201A (enExample)
DE (1) DE10085278B4 (enExample)
GB (1) GB2373497A (enExample)
WO (1) WO2001042163A2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2375231A (en) * 1999-12-09 2002-11-06 Saint Gobain Ceramics Electrostatic chucks with flat film electrode
US6603650B1 (en) * 1999-12-09 2003-08-05 Saint-Gobain Ceramics And Plastics, Inc. Electrostatic chuck susceptor and method for fabrication
TWI243158B (en) * 2000-12-21 2005-11-11 Ngk Insulators Ltd Aluminum nitride sintered bodies
US7369393B2 (en) * 2004-04-15 2008-05-06 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chucks having barrier layer
US8187525B2 (en) * 2007-08-31 2012-05-29 Corning Incorporated Method of firing green bodies into porous ceramic articles
TWI475594B (zh) 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
JP5180034B2 (ja) * 2008-11-21 2013-04-10 日本碍子株式会社 窒化アルミニウム焼結体、その製法及びそれを用いた静電チャック
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
SG176059A1 (en) 2009-05-15 2011-12-29 Entegris Inc Electrostatic chuck with polymer protrusions
US8580593B2 (en) * 2009-09-10 2013-11-12 Micron Technology, Inc. Epitaxial formation structures and associated methods of manufacturing solid state lighting devices
WO2011149918A2 (en) 2010-05-28 2011-12-01 Entegris, Inc. High surface resistivity electrostatic chuck
WO2012012384A1 (en) * 2010-07-20 2012-01-26 Hexatech, Inc. Polycrystalline aluminum nitride material and method of production thereof
JP6159982B2 (ja) * 2012-06-28 2017-07-12 日本特殊陶業株式会社 静電チャックの製造方法
JP6039497B2 (ja) * 2013-04-27 2016-12-07 京セラ株式会社 半導電性セラミックスおよび半導電性セラミックスの製造方法
KR102339550B1 (ko) * 2017-06-30 2021-12-17 주식회사 미코세라믹스 질화 알루미늄 소결체 및 이를 포함하는 반도체 제조 장치용 부재
CN111620701B (zh) * 2020-03-27 2022-05-13 烟台睿瓷新材料技术有限公司 一种多层复合陶瓷盘及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0771772A2 (en) * 1995-11-01 1997-05-07 Ngk Insulators, Ltd. Aluminium nitride sintered bodies and their manufacture
WO1997035816A1 (en) * 1996-03-28 1997-10-02 Carborundum Corporation Controlled dielectric loss aluminum nitride
EP0882689A2 (en) * 1997-06-06 1998-12-09 Ngk Insulators, Ltd. Aluminum nitride based composite body, electronic functional material, electrostatic chuck and method of producing aluminum nitride based composition body

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Publication number Priority date Publication date Assignee Title
JPS5944797A (ja) 1982-09-07 1984-03-13 増田　閃一 物体の静電的処理装置
JPS60151280A (ja) * 1984-01-19 1985-08-09 日本電気株式会社 窒化アルミニウム焼結体の製造方法
DE3608326A1 (de) 1986-03-13 1987-09-17 Kempten Elektroschmelz Gmbh Praktisch porenfreie formkoerper aus polykristallinem aluminiumnitrid und verfahren zu ihrer herstellung ohne mitverwendung von sinterhilfsmitteln
US4778778A (en) * 1987-06-03 1988-10-18 Keramont Advanced Ceramic Products Corporation Process for the production of sintered aluminum nitrides
JP2665242B2 (ja) 1988-09-19 1997-10-22 東陶機器株式会社 静電チャック
JPH0617214B2 (ja) 1989-12-29 1994-03-09 ナショナル サイエンス カウンシル 超微粒子な窒化アルミニウム粉末の製造方法
US5280156A (en) 1990-12-25 1994-01-18 Ngk Insulators, Ltd. Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means
EP1120817B8 (en) 1991-03-26 2007-10-10 Ngk Insulators, Ltd. Use of a corrosion-resistant member
EP0506537A1 (en) 1991-03-28 1992-09-30 Shin-Etsu Chemical Co., Ltd. Electrostatic chuck
JPH06737A (ja) 1991-03-29 1994-01-11 Shin Etsu Chem Co Ltd 静電チャック基板
JPH0659008A (ja) 1992-08-06 1994-03-04 Sumitomo Electric Ind Ltd 物性測定装置およびその測定方法
US5800618A (en) 1992-11-12 1998-09-01 Ngk Insulators, Ltd. Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof
US5413360A (en) 1992-12-01 1995-05-09 Kyocera Corporation Electrostatic chuck
US5320990A (en) * 1993-03-30 1994-06-14 The Dow Chemical Company Process for sintering aluminum nitride to a high thermal conductivity and resultant sintered bodies
JPH06326175A (ja) 1993-04-22 1994-11-25 Applied Materials Inc 集積回路処理装置において使用されるウエハサポートの誘電材への保護被覆とその形成方法
US5457075A (en) * 1993-05-11 1995-10-10 Hitachi Metals, Ltd. Sintered ceramic composite and molten metal contact member produced therefrom
EP0635870A1 (en) 1993-07-20 1995-01-25 Applied Materials, Inc. An electrostatic chuck having a grooved surface
DE69429243T2 (de) 1993-11-18 2002-06-27 Ngk Insulators, Ltd. Elektrode zur herstellung von plasma und verfahren zur herstellung der elektrode
US5541145A (en) 1993-12-22 1996-07-30 The Carborundum Company/Ibm Corporation Low temperature sintering route for aluminum nitride ceramics
KR100430643B1 (ko) 1994-01-31 2004-05-12 어플라이드 머티어리얼스, 인코포레이티드 두께가 균일한 절연체 막을 갖는 정전기 척
US5671116A (en) 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
US5677253A (en) 1995-03-30 1997-10-14 Kyocera Corporation Wafer holding member
US5886863A (en) 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
US5633073A (en) 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
US5817406A (en) 1995-07-14 1998-10-06 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and brazing material connection
EP0992470B1 (en) 1995-08-03 2006-03-08 Ngk Insulators, Ltd. Aluminium nitride sintered bodies and their use as substrate in an apparatus for producing semiconductors
JP3457477B2 (ja) 1995-09-06 2003-10-20 日本碍子株式会社 静電チャック
US5764471A (en) 1996-05-08 1998-06-09 Applied Materials, Inc. Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck
US5708557A (en) 1996-08-22 1998-01-13 Packard Hughes Interconnect Company Puncture-resistant electrostatic chuck with flat surface and method of making the same
US5958813A (en) 1996-11-26 1999-09-28 Kyocera Corporation Semi-insulating aluminum nitride sintered body
US5705450A (en) 1996-12-17 1998-01-06 The Dow Chemical Company A1N sintered body containing a rare earth aluminum oxynitride and method to produce said body
JP3790000B2 (ja) 1997-01-27 2006-06-28 日本碍子株式会社 セラミックス部材と電力供給用コネクターとの接合構造
JP3954177B2 (ja) 1997-01-29 2007-08-08 日本碍子株式会社 金属部材とセラミックス部材との接合構造およびその製造方法
US6303879B1 (en) 1997-04-01 2001-10-16 Applied Materials, Inc. Laminated ceramic with multilayer electrodes and method of fabrication
JP3746594B2 (ja) 1997-06-20 2006-02-15 日本碍子株式会社 セラミックスの接合構造およびその製造方法
US5909355A (en) 1997-12-02 1999-06-01 Applied Materials, Inc. Ceramic electrostatic chuck and method of fabricating same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0771772A2 (en) * 1995-11-01 1997-05-07 Ngk Insulators, Ltd. Aluminium nitride sintered bodies and their manufacture
WO1997035816A1 (en) * 1996-03-28 1997-10-02 Carborundum Corporation Controlled dielectric loss aluminum nitride
EP0882689A2 (en) * 1997-06-06 1998-12-09 Ngk Insulators, Ltd. Aluminum nitride based composite body, electronic functional material, electrostatic chuck and method of producing aluminum nitride based composition body

Also Published As

Publication number Publication date
WO2001042163A2 (en) 2001-06-14
US6723274B1 (en) 2004-04-20
CN1313420C (zh) 2007-05-02
WO2001042163A3 (en) 2002-03-07
GB0215873D0 (en) 2002-08-14
JP2004521052A (ja) 2004-07-15
CN1407956A (zh) 2003-04-02
AU4516201A (en) 2001-06-18
DE10085278B4 (de) 2008-10-16
DE10085278T1 (de) 2002-12-12
JP2009173537A (ja) 2009-08-06
KR20020059439A (ko) 2002-07-12

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Legal Events

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WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)