DE10085278B4 - Verfahren zur Herstellung eines polykristallinen Aluminumnitridkörpers - Google Patents
Verfahren zur Herstellung eines polykristallinen Aluminumnitridkörpers Download PDFInfo
- Publication number
- DE10085278B4 DE10085278B4 DE10085278T DE10085278T DE10085278B4 DE 10085278 B4 DE10085278 B4 DE 10085278B4 DE 10085278 T DE10085278 T DE 10085278T DE 10085278 T DE10085278 T DE 10085278T DE 10085278 B4 DE10085278 B4 DE 10085278B4
- Authority
- DE
- Germany
- Prior art keywords
- temperature
- aluminum nitride
- polycrystalline
- atmosphere
- sintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000012298 atmosphere Substances 0.000 claims abstract description 35
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 29
- 238000005245 sintering Methods 0.000 claims abstract description 21
- 238000002791 soaking Methods 0.000 claims abstract description 16
- 230000002950 deficient Effects 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims description 31
- 230000007812 deficiency Effects 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 5
- 238000005219 brazing Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000000280 densification Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005056 compaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Products (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/458,278 | 1999-12-09 | ||
| US09/458,278 US6723274B1 (en) | 1999-12-09 | 1999-12-09 | High-purity low-resistivity electrostatic chucks |
| PCT/US2000/042555 WO2001042163A2 (en) | 1999-12-09 | 2000-12-05 | High-purity low-resistivity electrostatic chucks |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE10085278T1 DE10085278T1 (de) | 2002-12-12 |
| DE10085278B4 true DE10085278B4 (de) | 2008-10-16 |
Family
ID=23820126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10085278T Expired - Lifetime DE10085278B4 (de) | 1999-12-09 | 2000-12-05 | Verfahren zur Herstellung eines polykristallinen Aluminumnitridkörpers |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6723274B1 (enExample) |
| JP (2) | JP2004521052A (enExample) |
| KR (1) | KR20020059439A (enExample) |
| CN (1) | CN1313420C (enExample) |
| AU (1) | AU4516201A (enExample) |
| DE (1) | DE10085278B4 (enExample) |
| GB (1) | GB2373497A (enExample) |
| WO (1) | WO2001042163A2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2375231A (en) * | 1999-12-09 | 2002-11-06 | Saint Gobain Ceramics | Electrostatic chucks with flat film electrode |
| US6603650B1 (en) * | 1999-12-09 | 2003-08-05 | Saint-Gobain Ceramics And Plastics, Inc. | Electrostatic chuck susceptor and method for fabrication |
| TWI243158B (en) * | 2000-12-21 | 2005-11-11 | Ngk Insulators Ltd | Aluminum nitride sintered bodies |
| US7369393B2 (en) * | 2004-04-15 | 2008-05-06 | Saint-Gobain Ceramics & Plastics, Inc. | Electrostatic chucks having barrier layer |
| US8187525B2 (en) * | 2007-08-31 | 2012-05-29 | Corning Incorporated | Method of firing green bodies into porous ceramic articles |
| TWI475594B (zh) | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
| JP5180034B2 (ja) * | 2008-11-21 | 2013-04-10 | 日本碍子株式会社 | 窒化アルミニウム焼結体、その製法及びそれを用いた静電チャック |
| US8861170B2 (en) | 2009-05-15 | 2014-10-14 | Entegris, Inc. | Electrostatic chuck with photo-patternable soft protrusion contact surface |
| SG176059A1 (en) | 2009-05-15 | 2011-12-29 | Entegris Inc | Electrostatic chuck with polymer protrusions |
| US8580593B2 (en) * | 2009-09-10 | 2013-11-12 | Micron Technology, Inc. | Epitaxial formation structures and associated methods of manufacturing solid state lighting devices |
| WO2011149918A2 (en) | 2010-05-28 | 2011-12-01 | Entegris, Inc. | High surface resistivity electrostatic chuck |
| WO2012012384A1 (en) * | 2010-07-20 | 2012-01-26 | Hexatech, Inc. | Polycrystalline aluminum nitride material and method of production thereof |
| JP6159982B2 (ja) * | 2012-06-28 | 2017-07-12 | 日本特殊陶業株式会社 | 静電チャックの製造方法 |
| JP6039497B2 (ja) * | 2013-04-27 | 2016-12-07 | 京セラ株式会社 | 半導電性セラミックスおよび半導電性セラミックスの製造方法 |
| KR102339550B1 (ko) * | 2017-06-30 | 2021-12-17 | 주식회사 미코세라믹스 | 질화 알루미늄 소결체 및 이를 포함하는 반도체 제조 장치용 부재 |
| CN111620701B (zh) * | 2020-03-27 | 2022-05-13 | 烟台睿瓷新材料技术有限公司 | 一种多层复合陶瓷盘及其制造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0771772A2 (en) * | 1995-11-01 | 1997-05-07 | Ngk Insulators, Ltd. | Aluminium nitride sintered bodies and their manufacture |
| WO1997035816A1 (en) * | 1996-03-28 | 1997-10-02 | Carborundum Corporation | Controlled dielectric loss aluminum nitride |
| EP0882689A2 (en) * | 1997-06-06 | 1998-12-09 | Ngk Insulators, Ltd. | Aluminum nitride based composite body, electronic functional material, electrostatic chuck and method of producing aluminum nitride based composition body |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5944797A (ja) | 1982-09-07 | 1984-03-13 | 増田 閃一 | 物体の静電的処理装置 |
| JPS60151280A (ja) * | 1984-01-19 | 1985-08-09 | 日本電気株式会社 | 窒化アルミニウム焼結体の製造方法 |
| DE3608326A1 (de) | 1986-03-13 | 1987-09-17 | Kempten Elektroschmelz Gmbh | Praktisch porenfreie formkoerper aus polykristallinem aluminiumnitrid und verfahren zu ihrer herstellung ohne mitverwendung von sinterhilfsmitteln |
| US4778778A (en) * | 1987-06-03 | 1988-10-18 | Keramont Advanced Ceramic Products Corporation | Process for the production of sintered aluminum nitrides |
| JP2665242B2 (ja) | 1988-09-19 | 1997-10-22 | 東陶機器株式会社 | 静電チャック |
| JPH0617214B2 (ja) | 1989-12-29 | 1994-03-09 | ナショナル サイエンス カウンシル | 超微粒子な窒化アルミニウム粉末の製造方法 |
| US5280156A (en) | 1990-12-25 | 1994-01-18 | Ngk Insulators, Ltd. | Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means |
| EP1120817B8 (en) | 1991-03-26 | 2007-10-10 | Ngk Insulators, Ltd. | Use of a corrosion-resistant member |
| EP0506537A1 (en) | 1991-03-28 | 1992-09-30 | Shin-Etsu Chemical Co., Ltd. | Electrostatic chuck |
| JPH06737A (ja) | 1991-03-29 | 1994-01-11 | Shin Etsu Chem Co Ltd | 静電チャック基板 |
| JPH0659008A (ja) | 1992-08-06 | 1994-03-04 | Sumitomo Electric Ind Ltd | 物性測定装置およびその測定方法 |
| US5800618A (en) | 1992-11-12 | 1998-09-01 | Ngk Insulators, Ltd. | Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof |
| US5413360A (en) | 1992-12-01 | 1995-05-09 | Kyocera Corporation | Electrostatic chuck |
| US5320990A (en) * | 1993-03-30 | 1994-06-14 | The Dow Chemical Company | Process for sintering aluminum nitride to a high thermal conductivity and resultant sintered bodies |
| JPH06326175A (ja) | 1993-04-22 | 1994-11-25 | Applied Materials Inc | 集積回路処理装置において使用されるウエハサポートの誘電材への保護被覆とその形成方法 |
| US5457075A (en) * | 1993-05-11 | 1995-10-10 | Hitachi Metals, Ltd. | Sintered ceramic composite and molten metal contact member produced therefrom |
| EP0635870A1 (en) | 1993-07-20 | 1995-01-25 | Applied Materials, Inc. | An electrostatic chuck having a grooved surface |
| DE69429243T2 (de) | 1993-11-18 | 2002-06-27 | Ngk Insulators, Ltd. | Elektrode zur herstellung von plasma und verfahren zur herstellung der elektrode |
| US5541145A (en) | 1993-12-22 | 1996-07-30 | The Carborundum Company/Ibm Corporation | Low temperature sintering route for aluminum nitride ceramics |
| KR100430643B1 (ko) | 1994-01-31 | 2004-05-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 두께가 균일한 절연체 막을 갖는 정전기 척 |
| US5671116A (en) | 1995-03-10 | 1997-09-23 | Lam Research Corporation | Multilayered electrostatic chuck and method of manufacture thereof |
| US5677253A (en) | 1995-03-30 | 1997-10-14 | Kyocera Corporation | Wafer holding member |
| US5886863A (en) | 1995-05-09 | 1999-03-23 | Kyocera Corporation | Wafer support member |
| US5633073A (en) | 1995-07-14 | 1997-05-27 | Applied Materials, Inc. | Ceramic susceptor with embedded metal electrode and eutectic connection |
| US5817406A (en) | 1995-07-14 | 1998-10-06 | Applied Materials, Inc. | Ceramic susceptor with embedded metal electrode and brazing material connection |
| EP0992470B1 (en) | 1995-08-03 | 2006-03-08 | Ngk Insulators, Ltd. | Aluminium nitride sintered bodies and their use as substrate in an apparatus for producing semiconductors |
| JP3457477B2 (ja) | 1995-09-06 | 2003-10-20 | 日本碍子株式会社 | 静電チャック |
| US5764471A (en) | 1996-05-08 | 1998-06-09 | Applied Materials, Inc. | Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck |
| US5708557A (en) | 1996-08-22 | 1998-01-13 | Packard Hughes Interconnect Company | Puncture-resistant electrostatic chuck with flat surface and method of making the same |
| US5958813A (en) | 1996-11-26 | 1999-09-28 | Kyocera Corporation | Semi-insulating aluminum nitride sintered body |
| US5705450A (en) | 1996-12-17 | 1998-01-06 | The Dow Chemical Company | A1N sintered body containing a rare earth aluminum oxynitride and method to produce said body |
| JP3790000B2 (ja) | 1997-01-27 | 2006-06-28 | 日本碍子株式会社 | セラミックス部材と電力供給用コネクターとの接合構造 |
| JP3954177B2 (ja) | 1997-01-29 | 2007-08-08 | 日本碍子株式会社 | 金属部材とセラミックス部材との接合構造およびその製造方法 |
| US6303879B1 (en) | 1997-04-01 | 2001-10-16 | Applied Materials, Inc. | Laminated ceramic with multilayer electrodes and method of fabrication |
| JP3746594B2 (ja) | 1997-06-20 | 2006-02-15 | 日本碍子株式会社 | セラミックスの接合構造およびその製造方法 |
| US5909355A (en) | 1997-12-02 | 1999-06-01 | Applied Materials, Inc. | Ceramic electrostatic chuck and method of fabricating same |
-
1999
- 1999-12-09 US US09/458,278 patent/US6723274B1/en not_active Expired - Lifetime
-
2000
- 2000-12-05 JP JP2001543466A patent/JP2004521052A/ja not_active Withdrawn
- 2000-12-05 DE DE10085278T patent/DE10085278B4/de not_active Expired - Lifetime
- 2000-12-05 AU AU45162/01A patent/AU4516201A/en not_active Abandoned
- 2000-12-05 WO PCT/US2000/042555 patent/WO2001042163A2/en not_active Ceased
- 2000-12-05 GB GB0215873A patent/GB2373497A/en not_active Withdrawn
- 2000-12-05 CN CNB008168083A patent/CN1313420C/zh not_active Expired - Lifetime
- 2000-12-05 KR KR1020027007244A patent/KR20020059439A/ko not_active Ceased
-
2009
- 2009-02-12 JP JP2009030499A patent/JP2009173537A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0771772A2 (en) * | 1995-11-01 | 1997-05-07 | Ngk Insulators, Ltd. | Aluminium nitride sintered bodies and their manufacture |
| WO1997035816A1 (en) * | 1996-03-28 | 1997-10-02 | Carborundum Corporation | Controlled dielectric loss aluminum nitride |
| EP0882689A2 (en) * | 1997-06-06 | 1998-12-09 | Ngk Insulators, Ltd. | Aluminum nitride based composite body, electronic functional material, electrostatic chuck and method of producing aluminum nitride based composition body |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2373497A (en) | 2002-09-25 |
| WO2001042163A2 (en) | 2001-06-14 |
| US6723274B1 (en) | 2004-04-20 |
| CN1313420C (zh) | 2007-05-02 |
| WO2001042163A3 (en) | 2002-03-07 |
| GB0215873D0 (en) | 2002-08-14 |
| JP2004521052A (ja) | 2004-07-15 |
| CN1407956A (zh) | 2003-04-02 |
| AU4516201A (en) | 2001-06-18 |
| DE10085278T1 (de) | 2002-12-12 |
| JP2009173537A (ja) | 2009-08-06 |
| KR20020059439A (ko) | 2002-07-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE10085278B4 (de) | Verfahren zur Herstellung eines polykristallinen Aluminumnitridkörpers | |
| DE69731740T2 (de) | Elektrisches heizelement und mit diesem versehehe spannnvorrichtung | |
| DE69924415T2 (de) | Heizelement und Verfahren zu seiner Herstellung | |
| DE69706734T2 (de) | Aluminiumnitrid-Sinterkörper, eingebetteter Metallgegenstand, Elektronikfunktionsmaterial und elektrostatische Einspannvorrichtung | |
| EP0114193B1 (de) | Keramischer Träger | |
| DE69611964T2 (de) | Aluminiumnitrid-Sinterkörper und ihre Herstellung | |
| DE69018276T2 (de) | Dotierte Titanatglaskeramik für Kondensatoren mit Korngrenzensperrschichten. | |
| EP2427589B1 (de) | Verfahren zur herstellung von thermoelektrischen schichten | |
| DE112015001562T5 (de) | Verfahren zur Herstellung eines Siliciumnitrid-Substrates | |
| US6641939B1 (en) | Transition metal oxide doped alumina and methods of making and using | |
| DE2601656A1 (de) | Hochohmige metallkeramikschicht und verfahren zu deren herstellung | |
| KR102657287B1 (ko) | 세라믹 구조체, 그 제법 및 반도체 제조 장치용 부재 | |
| DE69024340T2 (de) | Halbleiterkeramikkondensator von laminiertem und zwischenkornisolationstyp und verfahren zu seiner herstellung | |
| DE102006057750B4 (de) | Thermoelektrisches Material und thermoelektrische Umwandlungsvorrichtung unter Verwendung desselben | |
| DE69024280T2 (de) | Halbleiterkeramikkondensator von dem laminierten typ mit zwischenkornisolation und verfahren zu seiner herstellung | |
| DE69906804T2 (de) | Keramischer zünder mit hoher oxidationsbeständigheit und verfahren zur herstellung desselben | |
| DE102022205759A1 (de) | Verfahren zur Herstellung von Elementen für elektrische Arbeitsmaschinen, die mit übereinander angeordneten Schichten aus Eisen oder einer Eisenlegierung mit weichmagnetischen Eigenschaften gebildet sind sowie ein damit hergestelltes Element | |
| DE69023316T2 (de) | Keramischer kondensator eines halbleitertyps mit laminierten und kornisolierten grenzschichten. | |
| DE10085266B4 (de) | Elektrostatischer Scheibenhalter | |
| JPH09249967A (ja) | 高純度チタン酸バリウムストロンチウムスパッタリングターゲット材およびその製造方法 | |
| KR910004862B1 (ko) | 초전도막 형성용 타아겟재 | |
| EP0484130A2 (en) | High temperature heat-treating jig | |
| JPH0794012A (ja) | 微細結晶質Ｐｔ粉末、その製造方法及び厚膜導体用Ｐｔペースト | |
| KR950007087B1 (ko) | Tl-Ba-Ca-Cu-O계 초전도막형성용 타아겟재 | |
| JP2534793B2 (ja) | 電気絶縁装置用絶縁基板の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8364 | No opposition during term of opposition | ||
| R071 | Expiry of right |