JP2004241755A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2004241755A
JP2004241755A JP2003295234A JP2003295234A JP2004241755A JP 2004241755 A JP2004241755 A JP 2004241755A JP 2003295234 A JP2003295234 A JP 2003295234A JP 2003295234 A JP2003295234 A JP 2003295234A JP 2004241755 A JP2004241755 A JP 2004241755A
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Japan
Prior art keywords
semiconductor device
region
layer
semiconductor
source
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JP2003295234A
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English (en)
Japanese (ja)
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JP2004241755A5 (https=
Inventor
Takuji Matsumoto
拓治 松本
Takashi Ipposhi
隆志 一法師
Toshiaki Iwamatsu
俊明 岩松
Yuichi Hirano
有一 平野
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Renesas Technology Corp
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Renesas Technology Corp
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Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2003295234A priority Critical patent/JP2004241755A/ja
Priority to KR10-2004-0000165A priority patent/KR100523310B1/ko
Priority to US10/754,539 priority patent/US7067881B2/en
Priority to TW093100764A priority patent/TWI231044B/zh
Priority to CNB2004100018675A priority patent/CN100336228C/zh
Publication of JP2004241755A publication Critical patent/JP2004241755A/ja
Priority to US11/197,397 priority patent/US20050275021A1/en
Publication of JP2004241755A5 publication Critical patent/JP2004241755A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/794—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising conductive materials, e.g. silicided source, drain or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H10D64/0131—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal the additional conductive layer comprising a silicide layer formed by the silicidation reaction between the layer of silicon with a metal layer which is not formed by metal implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
JP2003295234A 2003-01-15 2003-08-19 半導体装置 Pending JP2004241755A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003295234A JP2004241755A (ja) 2003-01-15 2003-08-19 半導体装置
KR10-2004-0000165A KR100523310B1 (ko) 2003-01-15 2004-01-03 반도체 장치
US10/754,539 US7067881B2 (en) 2003-01-15 2004-01-12 Semiconductor device
TW093100764A TWI231044B (en) 2003-01-15 2004-01-13 Semiconductor device
CNB2004100018675A CN100336228C (zh) 2003-01-15 2004-01-15 半导体器件
US11/197,397 US20050275021A1 (en) 2003-01-15 2005-08-05 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003006641 2003-01-15
JP2003295234A JP2004241755A (ja) 2003-01-15 2003-08-19 半導体装置

Publications (2)

Publication Number Publication Date
JP2004241755A true JP2004241755A (ja) 2004-08-26
JP2004241755A5 JP2004241755A5 (https=) 2006-09-28

Family

ID=32964739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003295234A Pending JP2004241755A (ja) 2003-01-15 2003-08-19 半導体装置

Country Status (5)

Country Link
US (2) US7067881B2 (https=)
JP (1) JP2004241755A (https=)
KR (1) KR100523310B1 (https=)
CN (1) CN100336228C (https=)
TW (1) TWI231044B (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
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JP2006310772A (ja) * 2005-03-28 2006-11-09 Toshiba Corp Ｆｉｎ型チャネルトランジスタおよびその製造方法
JP2007042964A (ja) * 2005-08-05 2007-02-15 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2007173356A (ja) * 2005-12-20 2007-07-05 Renesas Technology Corp 半導体装置およびその製造方法
JP2007201240A (ja) * 2006-01-27 2007-08-09 Renesas Technology Corp 半導体装置及びその製造方法
JP2008515205A (ja) * 2004-09-29 2008-05-08 インターナショナル・ビジネス・マシーンズ・コーポレーション 犠牲スペーサを利用して歪みチャネル電界効果トランジスタを製造するための構造体及び方法
CN102208448A (zh) * 2011-05-24 2011-10-05 西安电子科技大学 多晶Si1-xGex/金属并列覆盖双栅SSGOI nMOSFET器件结构
JP2015073138A (ja) * 2006-12-05 2015-04-16 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP2015073137A (ja) * 2006-12-05 2015-04-16 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法

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JP4175650B2 (ja) * 2004-08-26 2008-11-05 シャープ株式会社 半導体装置の製造方法
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008515205A (ja) * 2004-09-29 2008-05-08 インターナショナル・ビジネス・マシーンズ・コーポレーション 犠牲スペーサを利用して歪みチャネル電界効果トランジスタを製造するための構造体及び方法
JP2006310772A (ja) * 2005-03-28 2006-11-09 Toshiba Corp Ｆｉｎ型チャネルトランジスタおよびその製造方法
JP2007042964A (ja) * 2005-08-05 2007-02-15 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2007173356A (ja) * 2005-12-20 2007-07-05 Renesas Technology Corp 半導体装置およびその製造方法
JP2007201240A (ja) * 2006-01-27 2007-08-09 Renesas Technology Corp 半導体装置及びその製造方法
US8350331B2 (en) 2006-01-27 2013-01-08 Renesas Electronics Corporation Semiconductor device and manufacturing method for the same
JP2015073138A (ja) * 2006-12-05 2015-04-16 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP2015073137A (ja) * 2006-12-05 2015-04-16 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
CN102208448A (zh) * 2011-05-24 2011-10-05 西安电子科技大学 多晶Si1-xGex/金属并列覆盖双栅SSGOI nMOSFET器件结构

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CN1519946A (zh) 2004-08-11
TW200414547A (en) 2004-08-01
KR100523310B1 (ko) 2005-10-24
TWI231044B (en) 2005-04-11
US20040227185A1 (en) 2004-11-18
US20050275021A1 (en) 2005-12-15
US7067881B2 (en) 2006-06-27
KR20040065998A (ko) 2004-07-23
CN100336228C (zh) 2007-09-05

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