JP2004214336A - プラズマエッチング方法およびプラズマエッチング装置 - Google Patents

プラズマエッチング方法およびプラズマエッチング装置 Download PDF

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Publication number
JP2004214336A
JP2004214336A JP2002380558A JP2002380558A JP2004214336A JP 2004214336 A JP2004214336 A JP 2004214336A JP 2002380558 A JP2002380558 A JP 2002380558A JP 2002380558 A JP2002380558 A JP 2002380558A JP 2004214336 A JP2004214336 A JP 2004214336A
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JP
Japan
Prior art keywords
frequency power
plasma etching
plasma
processed
material film
Prior art date
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Pending
Application number
JP2002380558A
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English (en)
Japanese (ja)
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JP2004214336A5 (enExample
Inventor
Masanobu Honda
昌伸 本田
Shoichiro Matsuyama
昇一郎 松山
Kazuya Nagaseki
一也 永関
Hisataka Hayashi
久貴 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokyo Electron Ltd
Original Assignee
Toshiba Corp
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Electron Ltd filed Critical Toshiba Corp
Priority to JP2002380558A priority Critical patent/JP2004214336A/ja
Priority to AU2003296132A priority patent/AU2003296132A1/en
Priority to PCT/JP2003/016818 priority patent/WO2004061928A1/ja
Priority to US10/538,064 priority patent/US7419613B2/en
Priority to CN200380107612.0A priority patent/CN1732558B/zh
Priority to TW092137121A priority patent/TW200416856A/zh
Publication of JP2004214336A publication Critical patent/JP2004214336A/ja
Publication of JP2004214336A5 publication Critical patent/JP2004214336A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2002380558A 2002-12-27 2002-12-27 プラズマエッチング方法およびプラズマエッチング装置 Pending JP2004214336A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002380558A JP2004214336A (ja) 2002-12-27 2002-12-27 プラズマエッチング方法およびプラズマエッチング装置
AU2003296132A AU2003296132A1 (en) 2002-12-27 2003-12-25 Method and device for plasma-etching organic material film
PCT/JP2003/016818 WO2004061928A1 (ja) 2002-12-27 2003-12-25 有機系材料膜をプラズマエッチングするための方法および装置
US10/538,064 US7419613B2 (en) 2002-12-27 2003-12-25 Method and device for plasma-etching organic material film
CN200380107612.0A CN1732558B (zh) 2002-12-27 2003-12-25 用于对有机类材料膜进行等离子体蚀刻的方法和装置
TW092137121A TW200416856A (en) 2002-12-27 2003-12-26 Method and device for plasma-etching organic material film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002380558A JP2004214336A (ja) 2002-12-27 2002-12-27 プラズマエッチング方法およびプラズマエッチング装置

Publications (2)

Publication Number Publication Date
JP2004214336A true JP2004214336A (ja) 2004-07-29
JP2004214336A5 JP2004214336A5 (enExample) 2006-02-09

Family

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Family Applications (1)

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JP2002380558A Pending JP2004214336A (ja) 2002-12-27 2002-12-27 プラズマエッチング方法およびプラズマエッチング装置

Country Status (6)

Country Link
US (1) US7419613B2 (enExample)
JP (1) JP2004214336A (enExample)
CN (1) CN1732558B (enExample)
AU (1) AU2003296132A1 (enExample)
TW (1) TW200416856A (enExample)
WO (1) WO2004061928A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007129116A (ja) * 2005-11-07 2007-05-24 Tokyo Electron Ltd 半導体装置の製造方法、半導体装置の製造装置、制御プログラム及びコンピュータ記憶媒体
JP2008187112A (ja) * 2007-01-31 2008-08-14 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体
JP2008282790A (ja) * 2007-05-10 2008-11-20 Semes Co Ltd プラズマを利用して基板を処理する装置
KR20110055402A (ko) * 2009-11-18 2011-05-25 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 그 클리닝 방법 및 프로그램을 기록한 기록매체
JP2013535089A (ja) * 2011-06-22 2013-09-09 サーティエイス リサーチ インスティチュート、チャイナ エレクトロニクス テクノロジー グループ コーポレイション 粒子源及びその製造方法
JP2020202393A (ja) * 2020-08-28 2020-12-17 芝浦メカトロニクス株式会社 プラズマ処理方法、およびプラズマ処理装置

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003234331A (ja) * 2001-12-05 2003-08-22 Tokyo Electron Ltd プラズマエッチング方法およびプラズマエッチング装置
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
JP4588391B2 (ja) 2004-09-01 2010-12-01 芝浦メカトロニクス株式会社 アッシング方法及びアッシング装置
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7909961B2 (en) * 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
CN101889325B (zh) 2007-12-06 2014-05-07 因特瓦克公司 用于衬底的两侧溅射蚀刻的系统和方法
JP2009177088A (ja) * 2008-01-28 2009-08-06 Tokyo Electron Ltd 基板処理装置
EP2138271B1 (en) * 2008-06-26 2011-08-03 Satisloh AG Method for manufacturing spectacle lenses according to a prescription
US20100018944A1 (en) * 2008-07-25 2010-01-28 United Microelectronics Corp. Patterning method
TWI606490B (zh) 2010-07-02 2017-11-21 半導體能源研究所股份有限公司 半導體膜的製造方法，半導體裝置的製造方法，和光電轉換裝置的製造方法
KR20160029985A (ko) * 2014-09-05 2016-03-16 성균관대학교산학협력단 유전체에 균일하게 플라즈마를 발생시키는 방법
JP2016092102A (ja) 2014-10-31 2016-05-23 東京エレクトロン株式会社 有機膜をエッチングする方法
CN104550133B (zh) * 2014-12-11 2017-02-22 河北同光晶体有限公司 一种去除碳化硅单晶中空微缺陷内部、及晶片表面有机污染物的方法
JP6438831B2 (ja) * 2015-04-20 2018-12-19 東京エレクトロン株式会社 有機膜をエッチングする方法
KR102422629B1 (ko) * 2016-07-19 2022-07-20 주성엔지니어링(주) 기판 처리 장치용 가스 분사 장치 및 기판 처리 장치
US10854448B2 (en) * 2017-01-31 2020-12-01 Tohoku University Plasma generating device, plasma sputtering device, and plasma sputtering method

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02298024A (ja) * 1989-05-12 1990-12-10 Tadahiro Omi リアクティブイオンエッチング装置
JP2774367B2 (ja) 1990-08-07 1998-07-09 忠弘 大見 プラズマプロセス用装置および方法
JPH05279877A (ja) 1992-04-01 1993-10-26 Nissin Electric Co Ltd プラズマによるエッチング装置
US5744049A (en) * 1994-07-18 1998-04-28 Applied Materials, Inc. Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
US5985089A (en) * 1995-05-25 1999-11-16 Tegal Corporation Plasma etch system
JP2000036484A (ja) 1998-05-11 2000-02-02 Tokyo Electron Ltd プラズマ処理方法
JP3436221B2 (ja) * 1999-03-15 2003-08-11 ソニー株式会社 半導体装置の製造方法
JP3844413B2 (ja) 1999-08-23 2006-11-15 東京エレクトロン株式会社 エッチング方法
JP4388645B2 (ja) 1999-10-19 2009-12-24 東京エレクトロン株式会社 プラズマエッチング方法
JP3447647B2 (ja) 2000-02-25 2003-09-16 株式会社日立製作所 試料のエッチング方法
JP3792999B2 (ja) * 2000-06-28 2006-07-05 株式会社東芝 プラズマ処理装置
US6893969B2 (en) * 2001-02-12 2005-05-17 Lam Research Corporation Use of ammonia for etching organic low-k dielectrics
JP2002270586A (ja) 2001-03-08 2002-09-20 Tokyo Electron Ltd 有機系絶縁膜のエッチング方法およびデュアルダマシンプロセス
US7432207B2 (en) * 2001-08-31 2008-10-07 Tokyo Electron Limited Method for etching object to be processed

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007129116A (ja) * 2005-11-07 2007-05-24 Tokyo Electron Ltd 半導体装置の製造方法、半導体装置の製造装置、制御プログラム及びコンピュータ記憶媒体
JP2008187112A (ja) * 2007-01-31 2008-08-14 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体
JP2008282790A (ja) * 2007-05-10 2008-11-20 Semes Co Ltd プラズマを利用して基板を処理する装置
KR20110055402A (ko) * 2009-11-18 2011-05-25 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 그 클리닝 방법 및 프로그램을 기록한 기록매체
KR101720670B1 (ko) * 2009-11-18 2017-03-28 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 그 클리닝 방법 및 프로그램을 기록한 기록매체
JP2013535089A (ja) * 2011-06-22 2013-09-09 サーティエイス リサーチ インスティチュート、チャイナ エレクトロニクス テクノロジー グループ コーポレイション 粒子源及びその製造方法
US9017562B2 (en) 2011-06-22 2015-04-28 38Th Research Institute, China Electronics Technology Group Corporation Particle sources and methods for manufacturing the same
JP2020202393A (ja) * 2020-08-28 2020-12-17 芝浦メカトロニクス株式会社 プラズマ処理方法、およびプラズマ処理装置
JP7030915B2 (ja) 2020-08-28 2022-03-07 芝浦メカトロニクス株式会社 プラズマ処理方法、およびプラズマ処理装置

Also Published As

Publication number Publication date
AU2003296132A1 (en) 2004-07-29
TW200416856A (en) 2004-09-01
WO2004061928A1 (ja) 2004-07-22
CN1732558B (zh) 2010-06-16
US7419613B2 (en) 2008-09-02
AU2003296132A8 (en) 2004-07-29
TWI328253B (enExample) 2010-08-01
US20060213865A1 (en) 2006-09-28
CN1732558A (zh) 2006-02-08

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