TWI328253B - - Google Patents
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- Publication number
- TWI328253B TWI328253B TW092137121A TW92137121A TWI328253B TW I328253 B TWI328253 B TW I328253B TW 092137121 A TW092137121 A TW 092137121A TW 92137121 A TW92137121 A TW 92137121A TW I328253 B TWI328253 B TW I328253B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- plasma
- electrode
- material film
- organic material
- Prior art date
Links
- 238000005530 etching Methods 0.000 claims description 63
- 238000012545 processing Methods 0.000 claims description 54
- 239000011368 organic material Substances 0.000 claims description 42
- 229910010272 inorganic material Inorganic materials 0.000 claims description 21
- 239000011147 inorganic material Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 238000001020 plasma etching Methods 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000012986 modification Methods 0.000 claims description 2
- 230000004048 modification Effects 0.000 claims description 2
- 230000001133 acceleration Effects 0.000 claims 4
- 229910052770 Uranium Inorganic materials 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 35
- 150000002500 ions Chemical class 0.000 description 24
- 239000003507 refrigerant Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000012546 transfer Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000005405 multipole Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910002794 Si K Inorganic materials 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32688—Multi-cusp fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002380558A JP2004214336A (ja) | 2002-12-27 | 2002-12-27 | プラズマエッチング方法およびプラズマエッチング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200416856A TW200416856A (en) | 2004-09-01 |
| TWI328253B true TWI328253B (enExample) | 2010-08-01 |
Family
ID=32708442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092137121A TW200416856A (en) | 2002-12-27 | 2003-12-26 | Method and device for plasma-etching organic material film |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7419613B2 (enExample) |
| JP (1) | JP2004214336A (enExample) |
| CN (1) | CN1732558B (enExample) |
| AU (1) | AU2003296132A1 (enExample) |
| TW (1) | TW200416856A (enExample) |
| WO (1) | WO2004061928A1 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003234331A (ja) | 2001-12-05 | 2003-08-22 | Tokyo Electron Ltd | プラズマエッチング方法およびプラズマエッチング装置 |
| US8349128B2 (en) | 2004-06-30 | 2013-01-08 | Applied Materials, Inc. | Method and apparatus for stable plasma processing |
| US20060000802A1 (en) * | 2004-06-30 | 2006-01-05 | Ajay Kumar | Method and apparatus for photomask plasma etching |
| JP4588391B2 (ja) | 2004-09-01 | 2010-12-01 | 芝浦メカトロニクス株式会社 | アッシング方法及びアッシング装置 |
| JP5058478B2 (ja) * | 2005-11-07 | 2012-10-24 | 東京エレクトロン株式会社 | 半導体装置の製造方法、プラズマ処理方法、半導体装置の製造装置、制御プログラム及びコンピュータ記憶媒体 |
| US7943005B2 (en) | 2006-10-30 | 2011-05-17 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
| US7909961B2 (en) * | 2006-10-30 | 2011-03-22 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
| JP5047644B2 (ja) * | 2007-01-31 | 2012-10-10 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体 |
| KR100941070B1 (ko) * | 2007-05-10 | 2010-02-09 | 세메스 주식회사 | 플라즈마를 이용하여 기판을 처리하는 장치 |
| WO2009073864A1 (en) | 2007-12-06 | 2009-06-11 | Intevac, Inc. | System and method for dual-sided sputter etch of substrates |
| JP2009177088A (ja) * | 2008-01-28 | 2009-08-06 | Tokyo Electron Ltd | 基板処理装置 |
| EP2138271B1 (en) * | 2008-06-26 | 2011-08-03 | Satisloh AG | Method for manufacturing spectacle lenses according to a prescription |
| US20100018944A1 (en) * | 2008-07-25 | 2010-01-28 | United Microelectronics Corp. | Patterning method |
| JP5442403B2 (ja) * | 2009-11-18 | 2014-03-12 | 東京エレクトロン株式会社 | 基板処理装置及びそのクリーニング方法並びにプログラムを記録した記録媒体 |
| TWI606490B (zh) | 2010-07-02 | 2017-11-21 | 半導體能源研究所股份有限公司 | 半導體膜的製造方法，半導體裝置的製造方法，和光電轉換裝置的製造方法 |
| CN102842474B (zh) * | 2011-06-22 | 2015-11-25 | 中国电子科技集团公司第三十八研究所 | 粒子源及其制造方法 |
| KR20160029985A (ko) * | 2014-09-05 | 2016-03-16 | 성균관대학교산학협력단 | 유전체에 균일하게 플라즈마를 발생시키는 방법 |
| JP2016092102A (ja) * | 2014-10-31 | 2016-05-23 | 東京エレクトロン株式会社 | 有機膜をエッチングする方法 |
| CN104550133B (zh) * | 2014-12-11 | 2017-02-22 | 河北同光晶体有限公司 | 一种去除碳化硅单晶中空微缺陷内部、及晶片表面有机污染物的方法 |
| JP6438831B2 (ja) * | 2015-04-20 | 2018-12-19 | 東京エレクトロン株式会社 | 有機膜をエッチングする方法 |
| KR102422629B1 (ko) * | 2016-07-19 | 2022-07-20 | 주성엔지니어링(주) | 기판 처리 장치용 가스 분사 장치 및 기판 처리 장치 |
| US10854448B2 (en) * | 2017-01-31 | 2020-12-01 | Tohoku University | Plasma generating device, plasma sputtering device, and plasma sputtering method |
| JP7030915B2 (ja) * | 2020-08-28 | 2022-03-07 | 芝浦メカトロニクス株式会社 | プラズマ処理方法、およびプラズマ処理装置 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02298024A (ja) * | 1989-05-12 | 1990-12-10 | Tadahiro Omi | リアクティブイオンエッチング装置 |
| JP2774367B2 (ja) | 1990-08-07 | 1998-07-09 | 忠弘 大見 | プラズマプロセス用装置および方法 |
| JPH05279877A (ja) * | 1992-04-01 | 1993-10-26 | Nissin Electric Co Ltd | プラズマによるエッチング装置 |
| US5744049A (en) * | 1994-07-18 | 1998-04-28 | Applied Materials, Inc. | Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same |
| US5985089A (en) * | 1995-05-25 | 1999-11-16 | Tegal Corporation | Plasma etch system |
| JP2000036484A (ja) | 1998-05-11 | 2000-02-02 | Tokyo Electron Ltd | プラズマ処理方法 |
| JP3436221B2 (ja) * | 1999-03-15 | 2003-08-11 | ソニー株式会社 | 半導体装置の製造方法 |
| JP3844413B2 (ja) | 1999-08-23 | 2006-11-15 | 東京エレクトロン株式会社 | エッチング方法 |
| JP4388645B2 (ja) | 1999-10-19 | 2009-12-24 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| JP3447647B2 (ja) * | 2000-02-25 | 2003-09-16 | 株式会社日立製作所 | 試料のエッチング方法 |
| JP3792999B2 (ja) * | 2000-06-28 | 2006-07-05 | 株式会社東芝 | プラズマ処理装置 |
| US6893969B2 (en) * | 2001-02-12 | 2005-05-17 | Lam Research Corporation | Use of ammonia for etching organic low-k dielectrics |
| JP2002270586A (ja) | 2001-03-08 | 2002-09-20 | Tokyo Electron Ltd | 有機系絶縁膜のエッチング方法およびデュアルダマシンプロセス |
| WO2003021652A1 (fr) * | 2001-08-31 | 2003-03-13 | Tokyo Electron Limited | Procede de gravure d'un objet a traiter |
-
2002
- 2002-12-27 JP JP2002380558A patent/JP2004214336A/ja active Pending
-
2003
- 2003-12-25 CN CN200380107612.0A patent/CN1732558B/zh not_active Expired - Lifetime
- 2003-12-25 AU AU2003296132A patent/AU2003296132A1/en not_active Abandoned
- 2003-12-25 US US10/538,064 patent/US7419613B2/en not_active Expired - Lifetime
- 2003-12-25 WO PCT/JP2003/016818 patent/WO2004061928A1/ja not_active Ceased
- 2003-12-26 TW TW092137121A patent/TW200416856A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US7419613B2 (en) | 2008-09-02 |
| TW200416856A (en) | 2004-09-01 |
| WO2004061928A1 (ja) | 2004-07-22 |
| US20060213865A1 (en) | 2006-09-28 |
| AU2003296132A1 (en) | 2004-07-29 |
| CN1732558A (zh) | 2006-02-08 |
| CN1732558B (zh) | 2010-06-16 |
| AU2003296132A8 (en) | 2004-07-29 |
| JP2004214336A (ja) | 2004-07-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |