CN1732558B - 用于对有机类材料膜进行等离子体蚀刻的方法和装置 - Google Patents

用于对有机类材料膜进行等离子体蚀刻的方法和装置 Download PDF

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Publication number
CN1732558B
CN1732558B CN200380107612.0A CN200380107612A CN1732558B CN 1732558 B CN1732558 B CN 1732558B CN 200380107612 A CN200380107612 A CN 200380107612A CN 1732558 B CN1732558 B CN 1732558B
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CN
China
Prior art keywords
frequency power
electrode
gas
plasma
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CN200380107612.0A
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English (en)
Chinese (zh)
Other versions
CN1732558A (zh
Inventor
本田昌伸
松山升一郎
永关一也
林久贵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japanese Businessman Panjaya Co ltd
Tokyo Electron Ltd
Kioxia Corp
Original Assignee
Toshiba Corp
Tokyo Electron Ltd
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Publication of CN1732558A publication Critical patent/CN1732558A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN200380107612.0A 2002-12-27 2003-12-25 用于对有机类材料膜进行等离子体蚀刻的方法和装置 Expired - Lifetime CN1732558B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002380558A JP2004214336A (ja) 2002-12-27 2002-12-27 プラズマエッチング方法およびプラズマエッチング装置
JP380558/2002 2002-12-27
PCT/JP2003/016818 WO2004061928A1 (ja) 2002-12-27 2003-12-25 有機系材料膜をプラズマエッチングするための方法および装置

Publications (2)

Publication Number Publication Date
CN1732558A CN1732558A (zh) 2006-02-08
CN1732558B true CN1732558B (zh) 2010-06-16

Family

ID=32708442

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200380107612.0A Expired - Lifetime CN1732558B (zh) 2002-12-27 2003-12-25 用于对有机类材料膜进行等离子体蚀刻的方法和装置

Country Status (6)

Country Link
US (1) US7419613B2 (enExample)
JP (1) JP2004214336A (enExample)
CN (1) CN1732558B (enExample)
AU (1) AU2003296132A1 (enExample)
TW (1) TW200416856A (enExample)
WO (1) WO2004061928A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003234331A (ja) 2001-12-05 2003-08-22 Tokyo Electron Ltd プラズマエッチング方法およびプラズマエッチング装置
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
JP4588391B2 (ja) 2004-09-01 2010-12-01 芝浦メカトロニクス株式会社 アッシング方法及びアッシング装置
JP5058478B2 (ja) * 2005-11-07 2012-10-24 東京エレクトロン株式会社 半導体装置の製造方法、プラズマ処理方法、半導体装置の製造装置、制御プログラム及びコンピュータ記憶媒体
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7909961B2 (en) * 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
JP5047644B2 (ja) * 2007-01-31 2012-10-10 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体
KR100941070B1 (ko) * 2007-05-10 2010-02-09 세메스 주식회사 플라즈마를 이용하여 기판을 처리하는 장치
WO2009073864A1 (en) 2007-12-06 2009-06-11 Intevac, Inc. System and method for dual-sided sputter etch of substrates
JP2009177088A (ja) * 2008-01-28 2009-08-06 Tokyo Electron Ltd 基板処理装置
EP2138271B1 (en) * 2008-06-26 2011-08-03 Satisloh AG Method for manufacturing spectacle lenses according to a prescription
US20100018944A1 (en) * 2008-07-25 2010-01-28 United Microelectronics Corp. Patterning method
JP5442403B2 (ja) * 2009-11-18 2014-03-12 東京エレクトロン株式会社 基板処理装置及びそのクリーニング方法並びにプログラムを記録した記録媒体
TWI606490B (zh) 2010-07-02 2017-11-21 半導體能源研究所股份有限公司 半導體膜的製造方法，半導體裝置的製造方法，和光電轉換裝置的製造方法
CN102842474B (zh) * 2011-06-22 2015-11-25 中国电子科技集团公司第三十八研究所 粒子源及其制造方法
KR20160029985A (ko) * 2014-09-05 2016-03-16 성균관대학교산학협력단 유전체에 균일하게 플라즈마를 발생시키는 방법
JP2016092102A (ja) * 2014-10-31 2016-05-23 東京エレクトロン株式会社 有機膜をエッチングする方法
CN104550133B (zh) * 2014-12-11 2017-02-22 河北同光晶体有限公司 一种去除碳化硅单晶中空微缺陷内部、及晶片表面有机污染物的方法
JP6438831B2 (ja) * 2015-04-20 2018-12-19 東京エレクトロン株式会社 有機膜をエッチングする方法
KR102422629B1 (ko) * 2016-07-19 2022-07-20 주성엔지니어링(주) 기판 처리 장치용 가스 분사 장치 및 기판 처리 장치
US10854448B2 (en) * 2017-01-31 2020-12-01 Tohoku University Plasma generating device, plasma sputtering device, and plasma sputtering method
JP7030915B2 (ja) * 2020-08-28 2022-03-07 芝浦メカトロニクス株式会社 プラズマ処理方法、およびプラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272417A (en) * 1989-05-12 1993-12-21 Tadahiro Ohmi Device for plasma process
US5744049A (en) * 1994-07-18 1998-04-28 Applied Materials, Inc. Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
CN1239587A (zh) * 1995-05-25 1999-12-22 泰格尔公司 等离子体蚀刻系统

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2774367B2 (ja) 1990-08-07 1998-07-09 忠弘 大見 プラズマプロセス用装置および方法
JPH05279877A (ja) * 1992-04-01 1993-10-26 Nissin Electric Co Ltd プラズマによるエッチング装置
JP2000036484A (ja) 1998-05-11 2000-02-02 Tokyo Electron Ltd プラズマ処理方法
JP3436221B2 (ja) * 1999-03-15 2003-08-11 ソニー株式会社 半導体装置の製造方法
JP3844413B2 (ja) 1999-08-23 2006-11-15 東京エレクトロン株式会社 エッチング方法
JP4388645B2 (ja) 1999-10-19 2009-12-24 東京エレクトロン株式会社 プラズマエッチング方法
JP3447647B2 (ja) * 2000-02-25 2003-09-16 株式会社日立製作所 試料のエッチング方法
JP3792999B2 (ja) * 2000-06-28 2006-07-05 株式会社東芝 プラズマ処理装置
US6893969B2 (en) * 2001-02-12 2005-05-17 Lam Research Corporation Use of ammonia for etching organic low-k dielectrics
JP2002270586A (ja) 2001-03-08 2002-09-20 Tokyo Electron Ltd 有機系絶縁膜のエッチング方法およびデュアルダマシンプロセス
WO2003021652A1 (fr) * 2001-08-31 2003-03-13 Tokyo Electron Limited Procede de gravure d'un objet a traiter

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272417A (en) * 1989-05-12 1993-12-21 Tadahiro Ohmi Device for plasma process
US5744049A (en) * 1994-07-18 1998-04-28 Applied Materials, Inc. Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
CN1239587A (zh) * 1995-05-25 1999-12-22 泰格尔公司 等离子体蚀刻系统

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JP特开2000-36484A 2000.02.02
JP特开2001-244245A 2001.09.07
JP特开2002-270586A 2002.09.20

Also Published As

Publication number Publication date
US7419613B2 (en) 2008-09-02
TW200416856A (en) 2004-09-01
WO2004061928A1 (ja) 2004-07-22
US20060213865A1 (en) 2006-09-28
AU2003296132A1 (en) 2004-07-29
CN1732558A (zh) 2006-02-08
AU2003296132A8 (en) 2004-07-29
JP2004214336A (ja) 2004-07-29
TWI328253B (enExample) 2010-08-01

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SE01 Entry into force of request for substantive examination
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TR01 Transfer of patent right

Effective date of registration: 20171208

Address after: Tokyo, Japan

Co-patentee after: TOSHIBA MEMORY Corp.

Patentee after: Tokyo Electron Ltd.

Address before: Tokyo, Japan

Co-patentee before: Toshiba Corp.

Patentee before: Tokyo Electron Ltd.

TR01 Transfer of patent right
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Tokyo, Japan

Patentee after: Tokyo Electron Ltd.

Patentee after: Kaixia Co.,Ltd.

Address before: Tokyo, Japan

Patentee before: Tokyo Electron Ltd.

Patentee before: TOSHIBA MEMORY Corp.

Address after: Tokyo, Japan

Patentee after: Tokyo Electron Ltd.

Patentee after: TOSHIBA MEMORY Corp.

Address before: Tokyo, Japan

Patentee before: Tokyo Electron Ltd.

Patentee before: Japanese businessman Panjaya Co.,Ltd.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20220323

Address after: Tokyo, Japan

Patentee after: Tokyo Electron Ltd.

Patentee after: Japanese businessman Panjaya Co.,Ltd.

Address before: Tokyo, Japan

Patentee before: Tokyo Electron Ltd.

Patentee before: TOSHIBA MEMORY Corp.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20100616