AU2003296132A1 - Method and device for plasma-etching organic material film - Google Patents

Method and device for plasma-etching organic material film

Info

Publication number
AU2003296132A1
AU2003296132A1 AU2003296132A AU2003296132A AU2003296132A1 AU 2003296132 A1 AU2003296132 A1 AU 2003296132A1 AU 2003296132 A AU2003296132 A AU 2003296132A AU 2003296132 A AU2003296132 A AU 2003296132A AU 2003296132 A1 AU2003296132 A1 AU 2003296132A1
Authority
AU
Australia
Prior art keywords
plasma
organic material
material film
etching organic
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003296132A
Other languages
English (en)
Other versions
AU2003296132A8 (en
Inventor
Hisataka Hayashi
Masanobu Honda
Shoichiro Matsuyama
Kazuya Nagaseki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2003296132A1 publication Critical patent/AU2003296132A1/en
Publication of AU2003296132A8 publication Critical patent/AU2003296132A8/xx
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AU2003296132A 2002-12-27 2003-12-25 Method and device for plasma-etching organic material film Abandoned AU2003296132A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-380558 2002-12-27
JP2002380558A JP2004214336A (ja) 2002-12-27 2002-12-27 プラズマエッチング方法およびプラズマエッチング装置
PCT/JP2003/016818 WO2004061928A1 (ja) 2002-12-27 2003-12-25 有機系材料膜をプラズマエッチングするための方法および装置

Publications (2)

Publication Number Publication Date
AU2003296132A1 true AU2003296132A1 (en) 2004-07-29
AU2003296132A8 AU2003296132A8 (en) 2004-07-29

Family

ID=32708442

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003296132A Abandoned AU2003296132A1 (en) 2002-12-27 2003-12-25 Method and device for plasma-etching organic material film

Country Status (6)

Country Link
US (1) US7419613B2 (enExample)
JP (1) JP2004214336A (enExample)
CN (1) CN1732558B (enExample)
AU (1) AU2003296132A1 (enExample)
TW (1) TW200416856A (enExample)
WO (1) WO2004061928A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003234331A (ja) * 2001-12-05 2003-08-22 Tokyo Electron Ltd プラズマエッチング方法およびプラズマエッチング装置
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
JP4588391B2 (ja) 2004-09-01 2010-12-01 芝浦メカトロニクス株式会社 アッシング方法及びアッシング装置
JP5058478B2 (ja) * 2005-11-07 2012-10-24 東京エレクトロン株式会社 半導体装置の製造方法、プラズマ処理方法、半導体装置の製造装置、制御プログラム及びコンピュータ記憶媒体
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7909961B2 (en) * 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
JP5047644B2 (ja) * 2007-01-31 2012-10-10 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体
KR100941070B1 (ko) * 2007-05-10 2010-02-09 세메스 주식회사 플라즈마를 이용하여 기판을 처리하는 장치
CN101889325B (zh) 2007-12-06 2014-05-07 因特瓦克公司 用于衬底的两侧溅射蚀刻的系统和方法
JP2009177088A (ja) * 2008-01-28 2009-08-06 Tokyo Electron Ltd 基板処理装置
EP2138271B1 (en) * 2008-06-26 2011-08-03 Satisloh AG Method for manufacturing spectacle lenses according to a prescription
US20100018944A1 (en) * 2008-07-25 2010-01-28 United Microelectronics Corp. Patterning method
JP5442403B2 (ja) * 2009-11-18 2014-03-12 東京エレクトロン株式会社 基板処理装置及びそのクリーニング方法並びにプログラムを記録した記録媒体
TWI606490B (zh) 2010-07-02 2017-11-21 半導體能源研究所股份有限公司 半導體膜的製造方法，半導體裝置的製造方法，和光電轉換裝置的製造方法
CN102842474B (zh) 2011-06-22 2015-11-25 中国电子科技集团公司第三十八研究所 粒子源及其制造方法
KR20160029985A (ko) * 2014-09-05 2016-03-16 성균관대학교산학협력단 유전체에 균일하게 플라즈마를 발생시키는 방법
JP2016092102A (ja) 2014-10-31 2016-05-23 東京エレクトロン株式会社 有機膜をエッチングする方法
CN104550133B (zh) * 2014-12-11 2017-02-22 河北同光晶体有限公司 一种去除碳化硅单晶中空微缺陷内部、及晶片表面有机污染物的方法
JP6438831B2 (ja) * 2015-04-20 2018-12-19 東京エレクトロン株式会社 有機膜をエッチングする方法
KR102422629B1 (ko) * 2016-07-19 2022-07-20 주성엔지니어링(주) 기판 처리 장치용 가스 분사 장치 및 기판 처리 장치
US10854448B2 (en) * 2017-01-31 2020-12-01 Tohoku University Plasma generating device, plasma sputtering device, and plasma sputtering method
JP7030915B2 (ja) * 2020-08-28 2022-03-07 芝浦メカトロニクス株式会社 プラズマ処理方法、およびプラズマ処理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02298024A (ja) * 1989-05-12 1990-12-10 Tadahiro Omi リアクティブイオンエッチング装置
JP2774367B2 (ja) 1990-08-07 1998-07-09 忠弘 大見 プラズマプロセス用装置および方法
JPH05279877A (ja) 1992-04-01 1993-10-26 Nissin Electric Co Ltd プラズマによるエッチング装置
US5744049A (en) * 1994-07-18 1998-04-28 Applied Materials, Inc. Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
US5985089A (en) * 1995-05-25 1999-11-16 Tegal Corporation Plasma etch system
JP2000036484A (ja) 1998-05-11 2000-02-02 Tokyo Electron Ltd プラズマ処理方法
JP3436221B2 (ja) * 1999-03-15 2003-08-11 ソニー株式会社 半導体装置の製造方法
JP3844413B2 (ja) 1999-08-23 2006-11-15 東京エレクトロン株式会社 エッチング方法
JP4388645B2 (ja) 1999-10-19 2009-12-24 東京エレクトロン株式会社 プラズマエッチング方法
JP3447647B2 (ja) 2000-02-25 2003-09-16 株式会社日立製作所 試料のエッチング方法
JP3792999B2 (ja) * 2000-06-28 2006-07-05 株式会社東芝 プラズマ処理装置
US6893969B2 (en) * 2001-02-12 2005-05-17 Lam Research Corporation Use of ammonia for etching organic low-k dielectrics
JP2002270586A (ja) 2001-03-08 2002-09-20 Tokyo Electron Ltd 有機系絶縁膜のエッチング方法およびデュアルダマシンプロセス
US7432207B2 (en) * 2001-08-31 2008-10-07 Tokyo Electron Limited Method for etching object to be processed

Also Published As

Publication number Publication date
TW200416856A (en) 2004-09-01
WO2004061928A1 (ja) 2004-07-22
CN1732558B (zh) 2010-06-16
US7419613B2 (en) 2008-09-02
AU2003296132A8 (en) 2004-07-29
TWI328253B (enExample) 2010-08-01
JP2004214336A (ja) 2004-07-29
US20060213865A1 (en) 2006-09-28
CN1732558A (zh) 2006-02-08

Similar Documents

Publication Publication Date Title
AU2003296132A1 (en) Method and device for plasma-etching organic material film
GB2403955B (en) Organic thin film manufacturing method and manufacturing apparatus
AU2003244310A1 (en) Inter-authentication method and device
AU2003253308A1 (en) Device and method for perforating web-like materials______
AU2003214603A1 (en) Auto-focusing method and device
AU2003277364A1 (en) Organic electroluminescent device and fabrication method thereof
AU2003253907A1 (en) Loadport apparatus and method for use thereof
AU2003289383A1 (en) Coating device and coating film forming method
AU2003252444A1 (en) Method and device for polishing substrate
AU2003252213A1 (en) Method for forming oxide film and electronic device material
AU2003224116A1 (en) Device and method for moistening objects
AU2003267777A1 (en) Method and device for persistent-memory management
AU2003303837A1 (en) Handwriting-input device and method
AU2003208078A1 (en) Image composition device and image composition method
AU2003242422A1 (en) Substrate processing device and substrate processing method
AU2003284537A1 (en) Substrate processing method and substrate processing device
EP1403911A3 (en) Thin film device and its fabrication method
AU2003257063A1 (en) Semiconductor device and method for forming
AU2003281009A1 (en) Organic semiconductor device and method for manufacturing same
AU2003258459A1 (en) Device and method for inspecting material
AU2003265881A1 (en) Semiconductor device and method therefor
AU2003249420A1 (en) Stereoradiography device and method for the use thereof
AU2003275264A1 (en) Improved film coater method and apparatus
AU2003279681A1 (en) Method and device for manufacturing packages
EP1637872A4 (en) SUBSTRATE, DEVICE AND METHOD FOR BIOLOGICAL ASSAY

Legal Events

Date Code Title Description
TH Corrigenda

Free format text: IN VOL 18, NO 34, PAGE(S) 8919 UNDER THE HEADING APPLICATIONS OPI - NAME INDEX UNDER THE NAME TOKYOELECTRON LIMITED, APPLICATION NO. 2003296132, UNDER INID (71) CORRECT THE NAME TO READ TOKYO ELECTRON LIMITED; KABUSHIKI KAISHA TOSHIBA

MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase