JP2004048012A - 細かいピッチの、高アスペクト比を有するチップ配線用構造体及び相互接続方法 - Google Patents
細かいピッチの、高アスペクト比を有するチップ配線用構造体及び相互接続方法 Download PDFInfo
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- JP2004048012A JP2004048012A JP2003193323A JP2003193323A JP2004048012A JP 2004048012 A JP2004048012 A JP 2004048012A JP 2003193323 A JP2003193323 A JP 2003193323A JP 2003193323 A JP2003193323 A JP 2003193323A JP 2004048012 A JP2004048012 A JP 2004048012A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
- H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
- H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01251—Changing the shapes of bumps
- H10W72/01255—Changing the shapes of bumps by using masks
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- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01251—Changing the shapes of bumps
- H10W72/01257—Changing the shapes of bumps by reflowing
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- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01271—Cleaning, e.g. oxide removal or de-smearing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
- H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
- H10W72/01938—Manufacture or treatment of bond pads using blanket deposition in gaseous form, e.g. by CVD or PVD
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- H—ELECTRICITY
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
- H10W72/01951—Changing the shapes of bond pads
- H10W72/01953—Changing the shapes of bond pads by etching
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
- H10W72/01971—Cleaning, e.g. oxide removal
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07231—Techniques
- H10W72/07236—Soldering or alloying
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- H—ELECTRICITY
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/221—Structures or relative sizes
- H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/221—Structures or relative sizes
- H10W72/225—Bumps having a filler embedded in a matrix
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- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/231—Shapes
- H10W72/234—Cross-sectional shape, i.e. in side view
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- H—ELECTRICITY
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/245—Dispositions, e.g. layouts of outermost layers of multilayered bumps, e.g. bump coating being only on a part of a bump core
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/253—Materials not comprising solid metals or solid metalloids, e.g. polymers or ceramics
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/29—Bond pads specially adapted therefor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/147—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/195,273 US20040007779A1 (en) | 2002-07-15 | 2002-07-15 | Wafer-level method for fine-pitch, high aspect ratio chip interconnect |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004048012A true JP2004048012A (ja) | 2004-02-12 |
| JP2004048012A5 JP2004048012A5 (https=) | 2006-08-24 |
Family
ID=30114947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003193323A Pending JP2004048012A (ja) | 2002-07-15 | 2003-07-08 | 細かいピッチの、高アスペクト比を有するチップ配線用構造体及び相互接続方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20040007779A1 (https=) |
| EP (1) | EP1387402A3 (https=) |
| JP (1) | JP2004048012A (https=) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7642647B2 (en) | 2004-05-20 | 2010-01-05 | Nec Electronics Corporation | Semiconductor device |
| JP2010508673A (ja) * | 2006-10-31 | 2010-03-18 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 終端アルミニウム金属層のないメタライゼーション層積層体 |
| JP2011228704A (ja) * | 2010-04-19 | 2011-11-10 | General Electric Co <Ge> | マクロピンハイブリッド相互接続アレイ及びその製造方法 |
| KR101208758B1 (ko) | 2009-11-05 | 2012-12-05 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 구리 필라 범프를 형성하는 메카니즘 |
| KR101283432B1 (ko) | 2012-11-27 | 2013-07-08 | 민선미 | 철도차량 검수용 이동식 상부 작업대 |
| US9293433B2 (en) | 2013-12-10 | 2016-03-22 | Shinko Electric Industries Co., Ltd. | Intermetallic compound layer on a pillar between a chip and substrate |
| JP2018529238A (ja) * | 2015-09-11 | 2018-10-04 | クァン ケ | フリップチップのパッケージ方法 |
Families Citing this family (78)
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| US6642136B1 (en) * | 2001-09-17 | 2003-11-04 | Megic Corporation | Method of making a low fabrication cost, high performance, high reliability chip scale package |
| US8021976B2 (en) * | 2002-10-15 | 2011-09-20 | Megica Corporation | Method of wire bonding over active area of a semiconductor circuit |
| US6815324B2 (en) * | 2001-02-15 | 2004-11-09 | Megic Corporation | Reliable metal bumps on top of I/O pads after removal of test probe marks |
| TWI313507B (en) * | 2002-10-25 | 2009-08-11 | Megica Corporatio | Method for assembling chips |
| US6818545B2 (en) * | 2001-03-05 | 2004-11-16 | Megic Corporation | Low fabrication cost, fine pitch and high reliability solder bump |
| US7099293B2 (en) * | 2002-05-01 | 2006-08-29 | Stmicroelectronics, Inc. | Buffer-less de-skewing for symbol combination in a CDMA demodulator |
| TWI245402B (en) * | 2002-01-07 | 2005-12-11 | Megic Corp | Rod soldering structure and manufacturing process thereof |
| US20040084206A1 (en) * | 2002-11-06 | 2004-05-06 | I-Chung Tung | Fine pad pitch organic circuit board for flip chip joints and board to board solder joints and method |
| TWI317548B (en) * | 2003-05-27 | 2009-11-21 | Megica Corp | Chip structure and method for fabricating the same |
| TWI221335B (en) * | 2003-07-23 | 2004-09-21 | Advanced Semiconductor Eng | IC chip with improved pillar bumps |
| US7394161B2 (en) * | 2003-12-08 | 2008-07-01 | Megica Corporation | Chip structure with pads having bumps or wirebonded wires formed thereover or used to be tested thereto |
| TWI230989B (en) * | 2004-05-05 | 2005-04-11 | Megic Corp | Chip bonding method |
| US7465654B2 (en) * | 2004-07-09 | 2008-12-16 | Megica Corporation | Structure of gold bumps and gold conductors on one IC die and methods of manufacturing the structures |
| US8022544B2 (en) * | 2004-07-09 | 2011-09-20 | Megica Corporation | Chip structure |
| US8067837B2 (en) * | 2004-09-20 | 2011-11-29 | Megica Corporation | Metallization structure over passivation layer for IC chip |
| US7452803B2 (en) * | 2004-08-12 | 2008-11-18 | Megica Corporation | Method for fabricating chip structure |
| US7547969B2 (en) | 2004-10-29 | 2009-06-16 | Megica Corporation | Semiconductor chip with passivation layer comprising metal interconnect and contact pads |
| US7332422B2 (en) * | 2005-01-05 | 2008-02-19 | Chartered Semiconductor Manufacturing, Ltd. | Method for CuO reduction by using two step nitrogen oxygen and reducing plasma treatment |
| US8294279B2 (en) * | 2005-01-25 | 2012-10-23 | Megica Corporation | Chip package with dam bar restricting flow of underfill |
| US7468545B2 (en) * | 2005-05-06 | 2008-12-23 | Megica Corporation | Post passivation structure for a semiconductor device and packaging process for same |
| TWI330863B (en) * | 2005-05-18 | 2010-09-21 | Megica Corp | Semiconductor chip with coil element over passivation layer |
| US7582556B2 (en) | 2005-06-24 | 2009-09-01 | Megica Corporation | Circuitry component and method for forming the same |
| CN102157494B (zh) * | 2005-07-22 | 2013-05-01 | 米辑电子股份有限公司 | 线路组件 |
| US8148822B2 (en) * | 2005-07-29 | 2012-04-03 | Megica Corporation | Bonding pad on IC substrate and method for making the same |
| US8399989B2 (en) * | 2005-07-29 | 2013-03-19 | Megica Corporation | Metal pad or metal bump over pad exposed by passivation layer |
| US7335536B2 (en) * | 2005-09-01 | 2008-02-26 | Texas Instruments Incorporated | Method for fabricating low resistance, low inductance interconnections in high current semiconductor devices |
| US7397121B2 (en) * | 2005-10-28 | 2008-07-08 | Megica Corporation | Semiconductor chip with post-passivation scheme formed over passivation layer |
| KR100804392B1 (ko) * | 2005-12-02 | 2008-02-15 | 주식회사 네패스 | 반도체 패키지 및 그 제조 방법 |
| US8421227B2 (en) * | 2006-06-28 | 2013-04-16 | Megica Corporation | Semiconductor chip structure |
| JP4270282B2 (ja) * | 2007-01-23 | 2009-05-27 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| US8193636B2 (en) * | 2007-03-13 | 2012-06-05 | Megica Corporation | Chip assembly with interconnection by metal bump |
| US7919859B2 (en) * | 2007-03-23 | 2011-04-05 | Intel Corporation | Copper die bumps with electromigration cap and plated solder |
| EP1978559A3 (en) * | 2007-04-06 | 2013-08-28 | Hitachi, Ltd. | Semiconductor device |
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| US20080251927A1 (en) * | 2007-04-13 | 2008-10-16 | Texas Instruments Incorporated | Electromigration-Resistant Flip-Chip Solder Joints |
| US8558379B2 (en) | 2007-09-28 | 2013-10-15 | Tessera, Inc. | Flip chip interconnection with double post |
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| US7855137B2 (en) * | 2008-08-12 | 2010-12-21 | International Business Machines Corporation | Method of making a sidewall-protected metallic pillar on a semiconductor substrate |
| CN102484081A (zh) * | 2009-07-02 | 2012-05-30 | 弗利普芯片国际有限公司 | 用于垂直柱互连的方法和结构 |
| US9627254B2 (en) | 2009-07-02 | 2017-04-18 | Flipchip International, Llc | Method for building vertical pillar interconnect |
| KR20110036450A (ko) * | 2009-10-01 | 2011-04-07 | 삼성전기주식회사 | 플립칩용 기판의 제조방법 및 이를 이용하여 제조한 플립칩용 기판 |
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| US7642647B2 (en) | 2004-05-20 | 2010-01-05 | Nec Electronics Corporation | Semiconductor device |
| JP2010508673A (ja) * | 2006-10-31 | 2010-03-18 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 終端アルミニウム金属層のないメタライゼーション層積層体 |
| KR101208758B1 (ko) | 2009-11-05 | 2012-12-05 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 구리 필라 범프를 형성하는 메카니즘 |
| US8659155B2 (en) | 2009-11-05 | 2014-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming copper pillar bumps |
| JP2011228704A (ja) * | 2010-04-19 | 2011-11-10 | General Electric Co <Ge> | マクロピンハイブリッド相互接続アレイ及びその製造方法 |
| KR101283432B1 (ko) | 2012-11-27 | 2013-07-08 | 민선미 | 철도차량 검수용 이동식 상부 작업대 |
| US9293433B2 (en) | 2013-12-10 | 2016-03-22 | Shinko Electric Industries Co., Ltd. | Intermetallic compound layer on a pillar between a chip and substrate |
| JP2018529238A (ja) * | 2015-09-11 | 2018-10-04 | クァン ケ | フリップチップのパッケージ方法 |
| US10985300B2 (en) | 2015-09-11 | 2021-04-20 | Quan Ke | Encapsulation method for flip chip |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1387402A3 (en) | 2013-09-04 |
| US20040007779A1 (en) | 2004-01-15 |
| EP1387402A2 (en) | 2004-02-04 |
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