JP2004014094A - 半導体メモリ素子 - Google Patents

半導体メモリ素子 Download PDF

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Publication number
JP2004014094A
JP2004014094A JP2003033112A JP2003033112A JP2004014094A JP 2004014094 A JP2004014094 A JP 2004014094A JP 2003033112 A JP2003033112 A JP 2003033112A JP 2003033112 A JP2003033112 A JP 2003033112A JP 2004014094 A JP2004014094 A JP 2004014094A
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JP
Japan
Prior art keywords
transistor
semiconductor memory
memory device
source
data line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003033112A
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English (en)
Japanese (ja)
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JP2004014094A5 (enExample
Inventor
Bryan Atwood
ブライアン・アトウッド
Kazuo Yano
矢野　和男
Tomoyuki Ishii
石井　智之
Taro Osabe
長部　太郎
Kazumasa Yanagisawa
柳沢　一正
Takeshi Sakata
阪田　健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of JP2004014094A publication Critical patent/JP2004014094A/ja
Publication of JP2004014094A5 publication Critical patent/JP2004014094A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2281—Timing of a read operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/229—Timing of a write operation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP2003033112A 2002-06-11 2003-02-12 半導体メモリ素子 Pending JP2004014094A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/167,754 US6787835B2 (en) 2002-06-11 2002-06-11 Semiconductor memories

Publications (2)

Publication Number Publication Date
JP2004014094A true JP2004014094A (ja) 2004-01-15
JP2004014094A5 JP2004014094A5 (enExample) 2006-03-23

Family

ID=29710907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003033112A Pending JP2004014094A (ja) 2002-06-11 2003-02-12 半導体メモリ素子

Country Status (4)

Country Link
US (3) US6787835B2 (enExample)
JP (1) JP2004014094A (enExample)
KR (1) KR20030095182A (enExample)
TW (1) TWI295105B (enExample)

Cited By (31)

* Cited by examiner, † Cited by third party
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JP2005243059A (ja) * 2004-02-24 2005-09-08 Renesas Technology Corp 半導体集積回路
JP2006012878A (ja) * 2004-06-22 2006-01-12 Renesas Technology Corp 半導体記憶装置
JP2007081335A (ja) * 2005-09-16 2007-03-29 Renesas Technology Corp 半導体装置
JP2008034007A (ja) * 2006-07-27 2008-02-14 Sony Corp 半導体メモリデバイス
JP2011129892A (ja) * 2009-11-20 2011-06-30 Semiconductor Energy Lab Co Ltd 半導体装置
KR20110081983A (ko) * 2008-09-19 2011-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2011166128A (ja) * 2010-01-15 2011-08-25 Semiconductor Energy Lab Co Ltd 半導体装置
WO2011114905A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP2011187940A (ja) * 2010-02-12 2011-09-22 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
JP2012119048A (ja) * 2010-09-29 2012-06-21 Semiconductor Energy Lab Co Ltd 半導体メモリ装置およびその駆動方法
JP2013009008A (ja) * 2009-11-24 2013-01-10 Semiconductor Energy Lab Co Ltd 半導体装置
US8357963B2 (en) 2010-07-27 2013-01-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013058770A (ja) * 2010-01-15 2013-03-28 Semiconductor Energy Lab Co Ltd 半導体装置
US8411480B2 (en) 2010-04-16 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8472231B2 (en) 2010-04-07 2013-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP2013128123A (ja) * 2009-10-30 2013-06-27 Semiconductor Energy Lab Co Ltd 半導体装置
US8598648B2 (en) 2010-03-19 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
US8619470B2 (en) 2010-06-23 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with long data holding period
US8797785B2 (en) 2010-11-12 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8896042B2 (en) 2009-10-30 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
JP2015008302A (ja) * 2009-12-25 2015-01-15 株式会社半導体エネルギー研究所 半導体装置
JP2016105483A (ja) * 2010-12-28 2016-06-09 株式会社半導体エネルギー研究所 半導体装置
JP2016219851A (ja) * 2016-09-27 2016-12-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101763969B1 (ko) * 2010-01-20 2017-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2019165229A (ja) * 2010-08-06 2019-09-26 株式会社半導体エネルギー研究所 半導体装置
JP2022097482A (ja) * 2012-02-29 2022-06-30 株式会社半導体エネルギー研究所 半導体装置
JP2023015175A (ja) * 2017-11-24 2023-01-31 株式会社半導体エネルギー研究所 半導体装置
JP2023139304A (ja) * 2009-12-25 2023-10-03 株式会社半導体エネルギー研究所 半導体装置
JP2024019558A (ja) * 2009-11-20 2024-02-09 株式会社半導体エネルギー研究所 半導体装置
JP2024177317A (ja) * 2011-03-11 2024-12-19 株式会社半導体エネルギー研究所 半導体装置
JP2025020457A (ja) * 2009-11-06 2025-02-12 株式会社半導体エネルギー研究所 半導体装置

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JP3955409B2 (ja) * 1999-03-17 2007-08-08 株式会社ルネサステクノロジ 半導体記憶装置
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JP4907117B2 (ja) * 2004-08-30 2012-03-28 ルネサスエレクトロニクス株式会社 半導体装置
KR100673901B1 (ko) * 2005-01-28 2007-01-25 주식회사 하이닉스반도체 저전압용 반도체 메모리 장치
KR100742758B1 (ko) * 2005-11-02 2007-07-26 경북대학교 산학협력단 플래시 메모리 소자 및 그 제조방법
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JP5265898B2 (ja) * 2007-09-25 2013-08-14 ルネサスエレクトロニクス株式会社 半導体装置
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KR102321812B1 (ko) * 2009-10-29 2021-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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KR101822962B1 (ko) * 2010-02-05 2018-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101921618B1 (ko) * 2010-02-05 2018-11-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
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JP6250955B2 (ja) 2012-05-25 2017-12-20 株式会社半導体エネルギー研究所 半導体装置の駆動方法
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JP2005243059A (ja) * 2004-02-24 2005-09-08 Renesas Technology Corp 半導体集積回路
JP2006012878A (ja) * 2004-06-22 2006-01-12 Renesas Technology Corp 半導体記憶装置
US8106449B2 (en) 2005-09-16 2012-01-31 Renesas Electronics Corporation Semiconductor device
JP2007081335A (ja) * 2005-09-16 2007-03-29 Renesas Technology Corp 半導体装置
JP2008034007A (ja) * 2006-07-27 2008-02-14 Sony Corp 半導体メモリデバイス
US9735163B2 (en) 2008-09-19 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20110081983A (ko) * 2008-09-19 2011-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101644811B1 (ko) * 2008-09-19 2016-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9373640B2 (en) 2009-10-30 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11963374B2 (en) 2009-10-30 2024-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10811417B2 (en) 2009-10-30 2020-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2022058804A (ja) * 2009-10-30 2022-04-12 株式会社半導体エネルギー研究所 半導体装置
US9685447B2 (en) 2009-10-30 2017-06-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor including oxide semiconductor
US11322498B2 (en) 2009-10-30 2022-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10510757B2 (en) 2009-10-30 2019-12-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including storage element
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