JP2003347229A - 半導体装置の製造方法および半導体装置 - Google Patents

半導体装置の製造方法および半導体装置

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Publication number
JP2003347229A
JP2003347229A JP2002158608A JP2002158608A JP2003347229A JP 2003347229 A JP2003347229 A JP 2003347229A JP 2002158608 A JP2002158608 A JP 2002158608A JP 2002158608 A JP2002158608 A JP 2002158608A JP 2003347229 A JP2003347229 A JP 2003347229A
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JP
Japan
Prior art keywords
film
silicon
silicon germanium
semiconductor device
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002158608A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003347229A5 (https=
Inventor
Taiichi Kondo
泰一 近藤
Wataru Hirasawa
亘 平澤
Nobuyuki Sugii
信之 杉井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Renesas Technology Corp
Hitachi Tokyo Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp, Hitachi Tokyo Electronics Co Ltd filed Critical Renesas Technology Corp
Priority to JP2002158608A priority Critical patent/JP2003347229A/ja
Priority to US10/440,102 priority patent/US6897129B2/en
Priority to TW092113887A priority patent/TWI260049B/zh
Priority to KR10-2003-0034368A priority patent/KR20030094018A/ko
Publication of JP2003347229A publication Critical patent/JP2003347229A/ja
Priority to US11/103,465 priority patent/US20050173705A1/en
Publication of JP2003347229A5 publication Critical patent/JP2003347229A5/ja
Priority to US11/969,154 priority patent/US8878244B2/en
Pending legal-status Critical Current

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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45506—Turbulent flow
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
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    • H10D30/798—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being provided in or under the channel regions
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    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01314—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of Ge, C or of compounds of Si, Ge or C contacting the insulator
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
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    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2002158608A 2002-05-31 2002-05-31 半導体装置の製造方法および半導体装置 Pending JP2003347229A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002158608A JP2003347229A (ja) 2002-05-31 2002-05-31 半導体装置の製造方法および半導体装置
US10/440,102 US6897129B2 (en) 2002-05-31 2003-05-19 Fabrication method of semiconductor device and semiconductor device
TW092113887A TWI260049B (en) 2002-05-31 2003-05-22 Fabrication method of semiconductor device and semiconductor device
KR10-2003-0034368A KR20030094018A (ko) 2002-05-31 2003-05-29 반도체 장치의 제조 방법 및 반도체 장치
US11/103,465 US20050173705A1 (en) 2002-05-31 2005-04-12 Fabrication method of semiconductor device and semiconductor device
US11/969,154 US8878244B2 (en) 2002-05-31 2008-01-03 Semiconductor device having strained silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002158608A JP2003347229A (ja) 2002-05-31 2002-05-31 半導体装置の製造方法および半導体装置

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JP2006237138A Division JP4696037B2 (ja) 2006-09-01 2006-09-01 半導体装置の製造方法および半導体装置

Publications (2)

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JP2003347229A true JP2003347229A (ja) 2003-12-05
JP2003347229A5 JP2003347229A5 (https=) 2005-09-08

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US (3) US6897129B2 (https=)
JP (1) JP2003347229A (https=)
KR (1) KR20030094018A (https=)
TW (1) TWI260049B (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004342976A (ja) * 2003-05-19 2004-12-02 Toshiba Ceramics Co Ltd 半導体基板の製造方法
JP2007096274A (ja) * 2005-09-07 2007-04-12 Soi Tec Silicon On Insulator Technologies Sa 半導体ヘテロ構造、および半導体ヘテロ構造を形成する方法
JP2007169785A (ja) * 2005-12-19 2007-07-05 Rohm & Haas Electronic Materials Llc 有機金属組成物
JP2009049411A (ja) * 2007-08-20 2009-03-05 Siltron Inc Ｓｓｏｉ基板の製造方法
JP2009164281A (ja) * 2007-12-28 2009-07-23 Fujitsu Microelectronics Ltd 半導体装置の製造方法
JP2010103142A (ja) * 2008-10-21 2010-05-06 Toshiba Corp 半導体装置の製造方法
JP2014053545A (ja) * 2012-09-10 2014-03-20 National Institute Of Advanced Industrial & Technology 単結晶ＳｉＧｅ層の製造方法及びそれを用いた太陽電池
JP2019511839A (ja) * 2016-04-05 2019-04-25 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ 微量金属分析のための半導体ウェハの気相エッチングのための方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100640971B1 (ko) * 2004-12-31 2006-11-02 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
US7972703B2 (en) * 2005-03-03 2011-07-05 Ferrotec (Usa) Corporation Baffle wafers and randomly oriented polycrystalline silicon used therefor
US8623728B2 (en) * 2009-07-28 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming high germanium concentration SiGe stressor
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