JP2003338519A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JP2003338519A
JP2003338519A JP2002146321A JP2002146321A JP2003338519A JP 2003338519 A JP2003338519 A JP 2003338519A JP 2002146321 A JP2002146321 A JP 2002146321A JP 2002146321 A JP2002146321 A JP 2002146321A JP 2003338519 A JP2003338519 A JP 2003338519A
Authority
JP
Japan
Prior art keywords
wire
semiconductor device
semiconductor chip
electrode pads
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002146321A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003338519A5 (enExample
Inventor
Asao Matsuzawa
朝夫 松澤
Takafumi Nishida
隆文 西田
Yasuyuki Nakajima
靖之 中島
Toshiaki Morita
俊章 守田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Hitachi Solutions Technology Ltd
Original Assignee
Renesas Technology Corp
Hitachi ULSI Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp, Hitachi ULSI Systems Co Ltd filed Critical Renesas Technology Corp
Priority to JP2002146321A priority Critical patent/JP2003338519A/ja
Priority to TW92112447A priority patent/TWI297184B/zh
Priority to US10/430,279 priority patent/US6900551B2/en
Priority to KR1020030030463A priority patent/KR20040014167A/ko
Priority to CNB031237061A priority patent/CN100481414C/zh
Publication of JP2003338519A publication Critical patent/JP2003338519A/ja
Priority to US11/035,999 priority patent/US20050121805A1/en
Publication of JP2003338519A5 publication Critical patent/JP2003338519A5/ja
Pending legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2002146321A 2002-05-21 2002-05-21 半導体装置及びその製造方法 Pending JP2003338519A (ja)

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JP2002146321A JP2003338519A (ja) 2002-05-21 2002-05-21 半導体装置及びその製造方法
TW92112447A TWI297184B (en) 2002-05-21 2003-05-07 A semiconductor device and a method of manufacturing the same
US10/430,279 US6900551B2 (en) 2002-05-21 2003-05-07 Semiconductor device with alternate bonding wire arrangement
KR1020030030463A KR20040014167A (ko) 2002-05-21 2003-05-14 반도체장치 및 그 제조방법
CNB031237061A CN100481414C (zh) 2002-05-21 2003-05-20 半导体器件及其制造方法
US11/035,999 US20050121805A1 (en) 2002-05-21 2005-01-18 Semiconductor device and a method of manufacturing the same

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JP2007103423A (ja) * 2005-09-30 2007-04-19 Renesas Technology Corp 半導体装置及びその製造方法
JP2007109917A (ja) * 2005-10-14 2007-04-26 Nec Electronics Corp 半導体装置および半導体装置の製造方法
JP2011155292A (ja) * 2011-04-01 2011-08-11 Renesas Electronics Corp 半導体装置の製造方法
JP2012195459A (ja) * 2011-03-16 2012-10-11 Sharp Corp ワイヤーボンディング方法、及び、半導体装置
US8525306B2 (en) 2010-07-21 2013-09-03 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
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WO2017145256A1 (ja) * 2016-02-23 2017-08-31 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US11616033B2 (en) 2021-02-03 2023-03-28 Kioxia Corporation Semiconductor device
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CN100419982C (zh) * 2004-05-31 2008-09-17 松下电器产业株式会社 半导体装置
WO2006090196A1 (en) * 2005-02-23 2006-08-31 Infineon Technologies Ag Rectangular bond pad and method of wire bonding the same with an elongated ball bond
JP3988777B2 (ja) * 2005-07-29 2007-10-10 オムロン株式会社 表面実装用の半導体パッケージおよびその製造方法
DE102006015222B4 (de) * 2006-03-30 2018-01-04 Robert Bosch Gmbh QFN-Gehäuse mit optimierter Anschlussflächengeometrie
JP4942020B2 (ja) * 2006-05-12 2012-05-30 ルネサスエレクトロニクス株式会社 半導体装置
US7777353B2 (en) * 2006-08-15 2010-08-17 Yamaha Corporation Semiconductor device and wire bonding method therefor
WO2008081630A1 (ja) * 2006-12-29 2008-07-10 Sanyo Electric Co., Ltd. 半導体装置およびその製造方法
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JP5001903B2 (ja) * 2008-05-28 2012-08-15 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP5518381B2 (ja) * 2008-07-10 2014-06-11 株式会社半導体エネルギー研究所 カラーセンサ及び当該カラーセンサを具備する電子機器
JP5656644B2 (ja) * 2008-12-19 2015-01-21 株式会社アドバンテスト 半導体装置、半導体装置の製造方法およびスイッチ回路
JP5595694B2 (ja) * 2009-01-15 2014-09-24 パナソニック株式会社 半導体装置
JP2011003764A (ja) * 2009-06-19 2011-01-06 Renesas Electronics Corp 半導体装置及びその製造方法
US8531013B2 (en) * 2010-06-11 2013-09-10 Casio Computer Co., Ltd. Semiconductor device equipped with bonding wires and manufacturing method of semiconductor device equipped with bonding wires
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JP5968713B2 (ja) * 2012-07-30 2016-08-10 ルネサスエレクトロニクス株式会社 半導体装置
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US6900551B2 (en) 2005-05-31
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US20050121805A1 (en) 2005-06-09
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