JP2003321675A - 窒化物蛍光体及びその製造方法 - Google Patents
窒化物蛍光体及びその製造方法Info
- Publication number
- JP2003321675A JP2003321675A JP2002126566A JP2002126566A JP2003321675A JP 2003321675 A JP2003321675 A JP 2003321675A JP 2002126566 A JP2002126566 A JP 2002126566A JP 2002126566 A JP2002126566 A JP 2002126566A JP 2003321675 A JP2003321675 A JP 2003321675A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- phosphor
- emitting device
- nitride phosphor
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01037—Rubidium [Rb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01055—Cesium [Cs]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01066—Dysprosium [Dy]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01067—Holmium [Ho]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Priority Applications (22)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002126566A JP2003321675A (ja) | 2002-04-26 | 2002-04-26 | 窒化物蛍光体及びその製造方法 |
| KR1020037015150A KR100961324B1 (ko) | 2002-03-22 | 2003-03-20 | 질화물 형광체와 그 제조 방법 및 발광 장치 |
| CNB038004542A CN100430456C (zh) | 2002-03-22 | 2003-03-20 | 氮化物荧光体,其制造方法及发光装置 |
| SG2009037052A SG173925A1 (en) | 2002-03-22 | 2003-03-20 | Nitride phosphor and production process thereof, and light emitting device |
| CA2447288A CA2447288C (en) | 2002-03-22 | 2003-03-20 | Nitride phosphor and method for preparation thereof, and light emitting device |
| US10/478,598 US7258816B2 (en) | 2002-03-22 | 2003-03-20 | Nitride phosphor and method for preparation thereof, and light emitting device |
| SG200600830-4A SG155768A1 (en) | 2002-03-22 | 2003-03-20 | Nitride phosphor and production process thereof, and light emitting device |
| PCT/JP2003/003418 WO2003080764A1 (en) | 2002-03-22 | 2003-03-20 | Nitride phosphor and method for preparation thereof, and light emitting device |
| KR1020097013178A KR100961322B1 (ko) | 2002-03-22 | 2003-03-20 | 질화물 형광체와 그 제조 방법 및 발광 장치 |
| KR1020097013179A KR100983193B1 (ko) | 2002-03-22 | 2003-03-20 | 질화물 형광체와 그 제조 방법 및 발광 장치 |
| SG2009037094A SG185827A1 (en) | 2002-03-22 | 2003-03-20 | Nitride phosphor and production process thereof, and light emitting device |
| KR1020097013180A KR100961342B1 (ko) | 2002-03-22 | 2003-03-20 | 질화물 형광체와 그 제조 방법 및 발광 장치 |
| EP03710450.2A EP1433831B1 (en) | 2002-03-22 | 2003-03-20 | Nitride phosphor and method for preparation thereof, and light emitting device |
| AU2003221442A AU2003221442A1 (en) | 2002-03-22 | 2003-03-20 | Nitride phosphor and method for preparation thereof, and light emitting device |
| MYPI20030992 MY148692A (en) | 2002-03-22 | 2003-03-21 | Nitride phosphor and production process thereof, and light emitting device |
| TW092106347A TWI258499B (en) | 2002-03-22 | 2003-03-21 | Nitride phosphor and method for preparation thereof, and light emitting device |
| US11/252,111 US7297293B2 (en) | 2002-03-22 | 2005-10-18 | Nitride phosphor and production process thereof, and light emitting device |
| US11/905,720 US7597823B2 (en) | 2002-03-22 | 2007-10-03 | Nitride phosphor and production process thereof, and light emitting device |
| US11/905,725 US7556744B2 (en) | 2002-03-22 | 2007-10-03 | Nitride phosphor and production process thereof, and light emitting device |
| US12/453,535 US7964113B2 (en) | 2002-03-22 | 2009-05-14 | Nitride phosphor and production process thereof, and light emitting device |
| US12/453,534 US8058793B2 (en) | 2002-03-22 | 2009-05-14 | Nitride phosphor and production process thereof, and light emitting device |
| US12/453,587 US8076847B2 (en) | 2002-03-22 | 2009-05-15 | Nitride phosphor and production process thereof, and light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002126566A JP2003321675A (ja) | 2002-04-26 | 2002-04-26 | 窒化物蛍光体及びその製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004312020A Division JP4009868B2 (ja) | 2004-10-27 | 2004-10-27 | 窒化物蛍光体及びそれを用いた発光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003321675A true JP2003321675A (ja) | 2003-11-14 |
| JP2003321675A5 JP2003321675A5 (enExample) | 2005-07-07 |
Family
ID=29540943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002126566A Pending JP2003321675A (ja) | 2002-03-22 | 2002-04-26 | 窒化物蛍光体及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003321675A (enExample) |
Cited By (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005053041A1 (ja) * | 2003-11-25 | 2005-06-09 | Matsushita Electric Works, Ltd. | 発光ダイオードチップを用いた発光装置 |
| WO2005052087A1 (ja) | 2003-11-26 | 2005-06-09 | Independent Administrative Institution National Institute For Materials Science | 蛍光体と蛍光体を用いた発光器具 |
| JP2005166734A (ja) * | 2003-11-28 | 2005-06-23 | Matsushita Electric Works Ltd | 発光装置 |
| WO2005078811A1 (ja) * | 2004-02-18 | 2005-08-25 | National Institute For Materials Science | 発光素子及び照明器具 |
| JP2005259825A (ja) * | 2004-03-09 | 2005-09-22 | Mitsubishi Chemicals Corp | 発光装置及びそれを用いた照明装置並びにディスプレイ |
| WO2005090517A1 (ja) | 2004-03-22 | 2005-09-29 | Fujikura Ltd. | 発光デバイス及び照明装置 |
| JP2005350649A (ja) * | 2004-06-10 | 2005-12-22 | Seoul Semiconductor Co Ltd | 発光物質 |
| WO2006006582A1 (ja) | 2004-07-13 | 2006-01-19 | Fujikura Ltd. | 蛍光体及びその蛍光体を用いた電球色光を発する電球色光発光ダイオードランプ |
| JP2006156505A (ja) * | 2004-11-25 | 2006-06-15 | Koito Mfg Co Ltd | 白色発光モジュールおよび車両用灯具 |
| JP2006169526A (ja) * | 2004-12-10 | 2006-06-29 | Lumileds Lighting Us Llc | 燐光変換発光装置 |
| WO2006077740A1 (ja) * | 2004-12-28 | 2006-07-27 | Nichia Corporation | 窒化物蛍光体及びその製造方法並びに窒化物蛍光体を用いた発光装置 |
| WO2006093135A1 (ja) * | 2005-02-28 | 2006-09-08 | Denki Kagaku Kogyo Kabushiki Kaisha | 蛍光体とその製造方法、及びそれを用いた発光素子 |
| JP2006261512A (ja) * | 2005-03-18 | 2006-09-28 | Fujikura Ltd | 発光デバイス及び照明装置 |
| JP2006282872A (ja) * | 2005-03-31 | 2006-10-19 | Dowa Mining Co Ltd | 窒化物蛍光体または酸窒化物蛍光体、及びその製造方法、並びに当該蛍光体を用いた発光装置 |
| JP2006306981A (ja) * | 2005-04-27 | 2006-11-09 | Nichia Chem Ind Ltd | 窒化物蛍光体及びそれを用いた発光装置 |
| JP2006306982A (ja) * | 2005-04-27 | 2006-11-09 | Nichia Chem Ind Ltd | 窒化物蛍光体及びそれを用いた発光装置 |
| JP2006319373A (ja) * | 2006-08-22 | 2006-11-24 | National Institute For Materials Science | 発光素子及び照明器具 |
| JP2006321921A (ja) * | 2005-05-19 | 2006-11-30 | Denki Kagaku Kogyo Kk | α型サイアロン蛍光体とそれを用いた照明器具 |
| KR100658458B1 (ko) | 2004-06-22 | 2006-12-15 | 한국에너지기술연구원 | 황적색 형광체, 이를 이용한 백색 led소자 및 황적색led 소자 |
| JP2007103965A (ja) * | 2006-12-27 | 2007-04-19 | National Institute For Materials Science | 発光素子を用いた照明装置 |
| US7258816B2 (en) | 2002-03-22 | 2007-08-21 | Nichia Corporation | Nitride phosphor and method for preparation thereof, and light emitting device |
| JP2008016861A (ja) * | 2004-04-27 | 2008-01-24 | Matsushita Electric Ind Co Ltd | 発光装置 |
| WO2008020541A1 (fr) | 2006-08-14 | 2008-02-21 | Fujikura Ltd. | Dispositif électroluminescent et dispositif d'éclairage |
| US7391060B2 (en) | 2004-04-27 | 2008-06-24 | Matsushita Electric Industrial Co., Ltd. | Phosphor composition and method for producing the same, and light-emitting device using the same |
| CN100416874C (zh) * | 2003-11-25 | 2008-09-03 | 松下电工株式会社 | 采用发光二极管芯片的发光器件 |
| EP2025734A3 (en) * | 2004-06-10 | 2009-06-10 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US7713443B2 (en) | 2005-01-27 | 2010-05-11 | National Institute For Materials Science | Phosphor production method |
| US7808012B2 (en) | 2007-07-13 | 2010-10-05 | Sharp Kabushiki Kaisha | Group of phosphor particles for light-emitting device, light-emitting device and backlight for liquid crystal display |
| JP2010222587A (ja) * | 2005-04-01 | 2010-10-07 | Mitsubishi Chemicals Corp | 蛍光体の製造方法 |
| JP2010265463A (ja) * | 2010-07-06 | 2010-11-25 | Dowa Electronics Materials Co Ltd | 窒化物蛍光体、窒化物蛍光体の製造方法、並びに上記窒化物蛍光体を用いた光源及びled |
| JP2011040779A (ja) * | 2010-10-12 | 2011-02-24 | Nichia Corp | 発光装置、発光素子用蛍光体及びその製造方法 |
| US7906041B2 (en) | 2004-08-04 | 2011-03-15 | Intematix Corporation | Silicate-based green phosphors in red-green-blue (RGB) backlighting and white illumination systems |
| WO2011091839A1 (de) * | 2010-01-29 | 2011-08-04 | Merck Patent Gmbh | Leuchtstoffe |
| EP2360225A1 (en) | 2004-09-22 | 2011-08-24 | National Institute for Materials Science | Phosphor, production method thereof and light emitting instrument |
| WO2011105157A1 (ja) | 2010-02-26 | 2011-09-01 | シャープ株式会社 | 発光装置 |
| US8071988B2 (en) | 2004-05-06 | 2011-12-06 | Seoul Semiconductor Co., Ltd. | White light emitting device comprising a plurality of light emitting diodes with different peak emission wavelengths and a wavelength converter |
| US8134165B2 (en) | 2007-08-28 | 2012-03-13 | Seoul Semiconductor Co., Ltd. | Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors |
| US8137589B2 (en) | 2007-08-22 | 2012-03-20 | Seoul Semiconductor Co., Ltd. | Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same |
| US8188492B2 (en) | 2006-08-29 | 2012-05-29 | Seoul Semiconductor Co., Ltd. | Light emitting device having plural light emitting diodes and at least one phosphor for emitting different wavelengths of light |
| US8206611B2 (en) | 2005-05-24 | 2012-06-26 | Mitsubishi Chemical Corporation | Phosphor and use thereof |
| JP2012519943A (ja) * | 2009-03-10 | 2012-08-30 | オーシャンズ キング ライティング サイエンスアンドテクノロジー カンパニー リミテッド | 白色光発光方法及び発光装置 |
| US8273266B2 (en) | 2005-11-11 | 2012-09-25 | Seoul Semiconductor Co., Ltd. | Copper-alkaline-earth-silicate mixed crystal phosphors |
| JP2012207143A (ja) * | 2011-03-30 | 2012-10-25 | Ube Industries Ltd | 窒化物蛍光体粉末の製造方法および窒化物蛍光体粉末 |
| US8308980B2 (en) | 2004-06-10 | 2012-11-13 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| WO2012165032A1 (ja) * | 2011-05-31 | 2012-12-06 | シャープ株式会社 | 発光装置 |
| US8513872B2 (en) | 2010-08-05 | 2013-08-20 | Sharp Kabushiki Kaisha | Light emitting apparatus and method for manufacturing thereof |
| US8535564B2 (en) | 2009-06-24 | 2013-09-17 | Seoul Semiconductor, Co., Ltd. | Light emitting device employing luminescent substances with oxyorthosilicate luminophores |
| KR101320290B1 (ko) * | 2004-07-28 | 2013-10-22 | 니치아 카가쿠 고교 가부시키가이샤 | 형광체, 그 제조방법 및 광원 |
| WO2013157524A1 (ja) * | 2012-04-20 | 2013-10-24 | 株式会社カネカ | 蛍光体及びその製造方法 |
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