JP2011040779A - 発光装置、発光素子用蛍光体及びその製造方法 - Google Patents
発光装置、発光素子用蛍光体及びその製造方法 Download PDFInfo
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- JP2011040779A JP2011040779A JP2010229653A JP2010229653A JP2011040779A JP 2011040779 A JP2011040779 A JP 2011040779A JP 2010229653 A JP2010229653 A JP 2010229653A JP 2010229653 A JP2010229653 A JP 2010229653A JP 2011040779 A JP2011040779 A JP 2011040779A
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Images
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
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Abstract
【解決手段】発光素子2Cと、発光素子の発する光の少なくとも一部を吸収し異なる波長に変換するよう、発光素子の周囲に配置された蛍光体3Cとを備え、蛍光体が(Sr,Ca)xAlwSiyN{(2/3)x+w+(4/3)y}:Eu(0.5≦x≦3、0.5≦y≦9、0.5≦w≦5)で表され、かつ結晶構造を有する窒化物系蛍光材料よりなり、かつ蛍光体の表面をリンを含む化合物で処理している。この構成により、蛍光体の酸化を防止し、蛍光体の劣化を抑制して長期にわたって安定した使用を可能とする。
【選択図】図4
Description
(発光装置)
(発光素子)
本明細書において発光素子とは、LED、LD等の半導体発光素子の他、真空放電による発光、熱発光からの発光を得るための素子も含む。例えば真空放電による紫外線等も発光素子として使用できる。本発明の第1の実施の形態においては、発光素子として波長が550nm以下、好ましくは460nm以下、更に好ましくは410nm以下の発光素子を利用する。例えば紫外光として250nm〜365nmの波長の光を発する紫外光LEDや、波長253.7nmの高圧水銀灯を利用できる。特に、後述するように本発明の第1の実施の形態では蛍光体の耐久性が向上されるため、出力の高いパワー系発光素子にも利用できるという利点がある。
(フェイスダウン実装)
(蛍光体)
上記の実施の形態で使用される蛍光体は、発光素子から放出された可視光や紫外光を他の発光波長に変換する。吸収光の波長より長波長の光を放出する波長変換材料として蛍光体を使用し、発光素子の発光と蛍光体の変換光の混色により所望の光を外部に放出させることができる。蛍光体は透光性を備えており、例えばLEDの半導体発光層から発光された光で励起されて発光する。好ましい蛍光体としては、ユーロピウムが附括されたYAG系、銀とアルミニウムによって共附括された硫化亜鉛、アルカリ土類窒化珪素蛍光体等のナイトライド系、アルカリ土類酸化窒化珪素蛍光体等のオキシナイトライド系の蛍光体が利用できる。また紫外光により励起されて所定の色の光を発生する蛍光体を用いてもよい。
(蛍光含有樹脂)
(拡散剤)
(フィラー)
(リン酸処理)
(窒化物系蛍光体の製造方法)
(実施例)
(実施例18〜21)
2、2B、2C…半導体発光素子
3、3B、3C…蛍光体層
4、4B…ワイヤ
10…発光素子
11…蛍光部材
13…リードフレーム;13a…マウントリード;13b…インナーリード
14…導電性ワイヤ
15…モールド部材
Claims (10)
- 発光素子と、
前記発光素子の発する光の少なくとも一部を吸収し異なる波長に変換するよう、前記発光素子の周囲に配置された蛍光体とを備える発光装置であって、
前記蛍光体が、(Sr,Ca)xAlwSiyN{(2/3)x+w+(4/3)y}:Eu(0.5≦x≦3、0.5≦y≦9、0.5≦w≦5)で表され、かつ結晶構造を有する窒化物系蛍光材料よりなり、かつ
前記蛍光体の表面をリンを含む化合物で処理してなることを特徴とする発光装置。 - 請求項1に記載の発光装置であって、
前記蛍光体表面を処理する化合物がリン酸塩であることを特徴とする発光装置。 - 請求項1又は2に記載の発光装置であって、
前記蛍光体が透光性樹脂に含有されて前記発光素子の周囲に配置されてなることを特徴とする発光装置。 - 請求項1から3のいずれか一に記載の発光装置であって、
前記蛍光体が、(Sr,Ca)AlSiN3:Euであることを特徴とする発光装置。 - 発光素子の発する光の少なくとも一部を吸収し異なる波長に変換するための発光素子用蛍光体であって、
前記蛍光体が、(Sr,Ca)xAlwSiyN{(2/3)x+w+(4/3)y}:Eu(0.5≦x≦3、0.5≦y≦9、0.5≦w≦5)で表され、かつ結晶構造を有する窒化物系蛍光材料よりなり、かつ
前記蛍光体の表面をリンを含む化合物で処理してなることを特徴とする発光素子用蛍光体。 - 請求項5に記載の発光素子用蛍光体であって、
前記蛍光体表面を処理する化合物がリン酸塩であることを特徴とする発光素子用蛍光体。 - 請求項5又は6に記載の発光素子用蛍光体であって、
前記蛍光体の結晶構造が単斜晶または斜方晶であることを特徴とする発光素子用蛍光体。 - 請求項5から7のいずれか一に記載の発光素子用蛍光体であって、
前記蛍光体が、(Sr,Ca)AlSiN3:Euであることを特徴とする発光素子用蛍光体。 - 発光素子の発する光の少なくとも一部を吸収し異なる波長に変換するための発光素子用蛍光体の製造方法であって、
リン含有溶液を、(Sr,Ca)xAlwSiyN{(2/3)x+w+(4/3)y}:Eu(0.5≦x≦3、0.5≦y≦9、0.5≦w≦5)で表され、かつ結晶構造を有する窒化物系蛍光材料よりなる蛍光体の表面に接触させる工程と、
処理された蛍光体を、酸素を含まない雰囲気中で100℃以上500℃以下にて熱処理する工程と、
を有することを特徴とする発光素子用蛍光体の製造方法。 - 請求項9に記載の発光素子用蛍光体の製造方法であって、
前記蛍光体が、(Sr,Ca)AlSiN3:Euであることを特徴とする発光素子用蛍光体の製造方法。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103525409A (zh) * | 2013-10-09 | 2014-01-22 | 张书生 | 一种高光效、高稳定性氮化物发光材料及其制造方法 |
JP2017186524A (ja) * | 2016-03-30 | 2017-10-12 | 日亜化学工業株式会社 | 蛍光体、発光装置及び蛍光体の製造方法 |
US10131837B2 (en) | 2016-03-30 | 2018-11-20 | Nichia Corporation | Fluorescent material, light-emitting device, and method for producing fluorescent material |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01315485A (ja) * | 1988-03-17 | 1989-12-20 | Sumitomo Chem Co Ltd | El発光体用リン酸塩被覆螢光体及びその製造方法 |
JPH10273654A (ja) * | 1997-03-31 | 1998-10-13 | Nemoto Tokushu Kagaku Kk | 耐水性を有する蓄光性蛍光体の製造方法 |
JP2002223008A (ja) * | 2000-10-17 | 2002-08-09 | Koninkl Philips Electronics Nv | 発光素子 |
JP2003206481A (ja) * | 2001-09-25 | 2003-07-22 | Patent Treuhand Ges Elektr Gluehlamp Mbh | 光源として少なくとも1つのledを備えた照明ユニット |
JP2003321675A (ja) * | 2002-04-26 | 2003-11-14 | Nichia Chem Ind Ltd | 窒化物蛍光体及びその製造方法 |
JP2005048105A (ja) * | 2003-07-30 | 2005-02-24 | Matsushita Electric Ind Co Ltd | 蛍光体組成物およびそれを用いた発光装置 |
-
2010
- 2010-10-12 JP JP2010229653A patent/JP5234080B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01315485A (ja) * | 1988-03-17 | 1989-12-20 | Sumitomo Chem Co Ltd | El発光体用リン酸塩被覆螢光体及びその製造方法 |
JPH10273654A (ja) * | 1997-03-31 | 1998-10-13 | Nemoto Tokushu Kagaku Kk | 耐水性を有する蓄光性蛍光体の製造方法 |
JP2002223008A (ja) * | 2000-10-17 | 2002-08-09 | Koninkl Philips Electronics Nv | 発光素子 |
JP2003206481A (ja) * | 2001-09-25 | 2003-07-22 | Patent Treuhand Ges Elektr Gluehlamp Mbh | 光源として少なくとも1つのledを備えた照明ユニット |
JP2003321675A (ja) * | 2002-04-26 | 2003-11-14 | Nichia Chem Ind Ltd | 窒化物蛍光体及びその製造方法 |
JP2005048105A (ja) * | 2003-07-30 | 2005-02-24 | Matsushita Electric Ind Co Ltd | 蛍光体組成物およびそれを用いた発光装置 |
Non-Patent Citations (1)
Title |
---|
JPN6012032898; 応用物理学会学術講演会講演予稿集 第65回 No.3, 1282、1283, 応用物理学会 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103525409A (zh) * | 2013-10-09 | 2014-01-22 | 张书生 | 一种高光效、高稳定性氮化物发光材料及其制造方法 |
JP2017186524A (ja) * | 2016-03-30 | 2017-10-12 | 日亜化学工業株式会社 | 蛍光体、発光装置及び蛍光体の製造方法 |
US10131837B2 (en) | 2016-03-30 | 2018-11-20 | Nichia Corporation | Fluorescent material, light-emitting device, and method for producing fluorescent material |
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