JP2003282875A - 半導体装置及び半導体装置の製造方法 - Google Patents

半導体装置及び半導体装置の製造方法

Info

Publication number
JP2003282875A
JP2003282875A JP2002087505A JP2002087505A JP2003282875A JP 2003282875 A JP2003282875 A JP 2003282875A JP 2002087505 A JP2002087505 A JP 2002087505A JP 2002087505 A JP2002087505 A JP 2002087505A JP 2003282875 A JP2003282875 A JP 2003282875A
Authority
JP
Japan
Prior art keywords
layer
polycrystalline silicon
gate
metal
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002087505A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003282875A5 (https=
Inventor
Koji Matsuo
浩司 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002087505A priority Critical patent/JP2003282875A/ja
Priority to US10/396,453 priority patent/US6833596B2/en
Publication of JP2003282875A publication Critical patent/JP2003282875A/ja
Publication of JP2003282875A5 publication Critical patent/JP2003282875A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01316—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of elemental metal contacting the insulator, e.g. Ta, W, Mo or Al
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2002087505A 2002-03-27 2002-03-27 半導体装置及び半導体装置の製造方法 Pending JP2003282875A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002087505A JP2003282875A (ja) 2002-03-27 2002-03-27 半導体装置及び半導体装置の製造方法
US10/396,453 US6833596B2 (en) 2002-03-27 2003-03-26 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002087505A JP2003282875A (ja) 2002-03-27 2002-03-27 半導体装置及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2003282875A true JP2003282875A (ja) 2003-10-03
JP2003282875A5 JP2003282875A5 (https=) 2005-05-12

Family

ID=29233673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002087505A Pending JP2003282875A (ja) 2002-03-27 2002-03-27 半導体装置及び半導体装置の製造方法

Country Status (2)

Country Link
US (1) US6833596B2 (https=)
JP (1) JP2003282875A (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006041339A (ja) * 2004-07-29 2006-02-09 Fujitsu Ltd Ｃｍｏｓ集積回路
JP2006245417A (ja) * 2005-03-04 2006-09-14 Toshiba Corp 半導体装置およびその製造方法
JP2007019400A (ja) * 2005-07-11 2007-01-25 Renesas Technology Corp Ｍｏｓ構造を有する半導体装置およびその製造方法
JP2008211182A (ja) * 2007-01-10 2008-09-11 Interuniv Micro Electronica Centrum Vzw ２つの仕事関数を備えたｃｍｏｓデバイスの製造方法
JP2008282856A (ja) * 2007-05-08 2008-11-20 Toshiba Corp 半導体装置
US7737503B2 (en) 2006-06-08 2010-06-15 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US8207584B2 (en) 2007-12-07 2012-06-26 Renesas Electronics Corporation Semiconductor device and manufacturing method of the same

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6004366A (en) 1994-11-23 1999-12-21 Donaldson Company, Inc. Reverse flow air filter arrangement and method
JP4197607B2 (ja) * 2002-11-06 2008-12-17 株式会社東芝 絶縁ゲート型電界効果トランジスタを含む半導体装置の製造方法
TWI220792B (en) * 2003-09-23 2004-09-01 Promos Technologies Inc Method for fabricating P-type gate NMOS transistor
US6921691B1 (en) * 2004-03-18 2005-07-26 Infineon Technologies Ag Transistor with dopant-bearing metal in source and drain
US6893927B1 (en) * 2004-03-22 2005-05-17 Intel Corporation Method for making a semiconductor device with a metal gate electrode
JP2005353832A (ja) * 2004-06-10 2005-12-22 Toshiba Corp 半導体装置及びその製造方法
US7592678B2 (en) * 2004-06-17 2009-09-22 Infineon Technologies Ag CMOS transistors with dual high-k gate dielectric and methods of manufacture thereof
US8399934B2 (en) * 2004-12-20 2013-03-19 Infineon Technologies Ag Transistor device
US8178902B2 (en) 2004-06-17 2012-05-15 Infineon Technologies Ag CMOS transistor with dual high-k gate dielectric and method of manufacture thereof
US7323403B2 (en) * 2004-11-29 2008-01-29 Texas Instruments Incroporated Multi-step process for patterning a metal gate electrode
US7344934B2 (en) * 2004-12-06 2008-03-18 Infineon Technologies Ag CMOS transistor and method of manufacture thereof
US7253050B2 (en) * 2004-12-20 2007-08-07 Infineon Technologies Ag Transistor device and method of manufacture thereof
US7160781B2 (en) * 2005-03-21 2007-01-09 Infineon Technologies Ag Transistor device and methods of manufacture thereof
US7361538B2 (en) * 2005-04-14 2008-04-22 Infineon Technologies Ag Transistors and methods of manufacture thereof
JP2006310625A (ja) * 2005-04-28 2006-11-09 Toshiba Corp 半導体記憶装置
JP4958408B2 (ja) * 2005-05-31 2012-06-20 三洋電機株式会社 半導体装置
US20070037333A1 (en) * 2005-08-15 2007-02-15 Texas Instruments Incorporated Work function separation for fully silicided gates
US20070052037A1 (en) * 2005-09-02 2007-03-08 Hongfa Luan Semiconductor devices and methods of manufacture thereof
US8188551B2 (en) 2005-09-30 2012-05-29 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
JP2007103842A (ja) * 2005-10-07 2007-04-19 Toshiba Corp 半導体装置
US7462538B2 (en) 2005-11-15 2008-12-09 Infineon Technologies Ag Methods of manufacturing multiple gate CMOS transistors having different gate dielectric materials
US7495290B2 (en) * 2005-12-14 2009-02-24 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
US7510943B2 (en) 2005-12-16 2009-03-31 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
KR100780652B1 (ko) * 2006-12-27 2007-11-30 주식회사 하이닉스반도체 반도체 소자 제조방법
JP2009176997A (ja) * 2008-01-25 2009-08-06 Panasonic Corp 半導体装置及びその製造方法
JP5104373B2 (ja) * 2008-02-14 2012-12-19 日本ゼオン株式会社 位相差板の製造方法
US8283734B2 (en) * 2010-04-09 2012-10-09 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-threshold voltage device and method of making same
JP5492747B2 (ja) * 2010-11-22 2014-05-14 パナソニック株式会社 半導体装置
KR20120125017A (ko) * 2011-05-06 2012-11-14 삼성전자주식회사 반도체 장치 및 그 제조방법
JP2013051250A (ja) * 2011-08-30 2013-03-14 Elpida Memory Inc 半導体装置及びその製造方法
CN102332397A (zh) * 2011-10-25 2012-01-25 上海华力微电子有限公司 一种双高k栅介质/金属栅结构的制作方法
CN103377899A (zh) * 2012-04-25 2013-10-30 中芯国际集成电路制造(上海)有限公司 金属栅极制造方法和cmos制造方法
CN104064449B (zh) * 2013-03-19 2017-02-22 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
KR102353931B1 (ko) * 2017-09-13 2022-01-21 삼성전자주식회사 반도체 소자 및 그 제조 방법
CN116230526A (zh) * 2021-12-02 2023-06-06 成都高真科技有限公司 一种用于半导体工艺中去除多晶硅栅的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
KR950013785B1 (ko) * 1991-01-21 1995-11-16 미쓰비시 뎅끼 가부시끼가이샤 Mos형 전계효과 트랜지스터를 포함하는 반도체장치 및 그 제조방법
JP3380086B2 (ja) * 1995-05-26 2003-02-24 三菱電機株式会社 半導体装置の製造方法
US6130123A (en) * 1998-06-30 2000-10-10 Intel Corporation Method for making a complementary metal gate electrode technology
JP2000223588A (ja) 1999-02-03 2000-08-11 Nec Corp 相補ｍｉｓ型半導体装置及びその製造方法
JP3264264B2 (ja) 1999-03-01 2002-03-11 日本電気株式会社 相補型集積回路とその製造方法
JP4237332B2 (ja) * 1999-04-30 2009-03-11 株式会社東芝 半導体装置の製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006041339A (ja) * 2004-07-29 2006-02-09 Fujitsu Ltd Ｃｍｏｓ集積回路
JP2006245417A (ja) * 2005-03-04 2006-09-14 Toshiba Corp 半導体装置およびその製造方法
JP2007019400A (ja) * 2005-07-11 2007-01-25 Renesas Technology Corp Ｍｏｓ構造を有する半導体装置およびその製造方法
US7737503B2 (en) 2006-06-08 2010-06-15 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US7768077B2 (en) 2006-06-08 2010-08-03 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US8169040B2 (en) 2006-06-08 2012-05-01 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
JP2008211182A (ja) * 2007-01-10 2008-09-11 Interuniv Micro Electronica Centrum Vzw ２つの仕事関数を備えたｃｍｏｓデバイスの製造方法
JP2008282856A (ja) * 2007-05-08 2008-11-20 Toshiba Corp 半導体装置
US7768076B2 (en) 2007-05-08 2010-08-03 Kabushiki Kaisha Toshiba Semiconductor device comprising an n-channel and p-channel MISFET
US8207584B2 (en) 2007-12-07 2012-06-26 Renesas Electronics Corporation Semiconductor device and manufacturing method of the same

Also Published As

Publication number Publication date
US6833596B2 (en) 2004-12-21
US20040000695A1 (en) 2004-01-01

Similar Documents

Publication Publication Date Title
JP2003282875A (ja) 半導体装置及び半導体装置の製造方法
US5937315A (en) Self-aligned silicide gate technology for advanced submicron MOS devices
US7807538B2 (en) Method of forming a silicide layer while applying a compressive or tensile strain to impurity layers
JP3594140B2 (ja) 半導体装置の製造方法
JP2002299610A (ja) 半導体装置およびその製造方法
KR100376235B1 (ko) 반도체장치및그제조방법
JPH09320988A (ja) 半導体装置とその製造方法
JP2003100861A (ja) 半導体装置の製造方法
US6762468B2 (en) Semiconductor device and method of manufacturing the same
JPH05235350A (ja) 半導体装置
JP2000114395A (ja) 半導体装置およびその製造方法
JP3866874B2 (ja) シリサイド化素子を形成する方法
JP3963023B2 (ja) 半導体集積装置の製造方法
JPH1140679A (ja) 半導体装置およびその製造方法
US20070099370A1 (en) Method for manufacturing semiconductor device
JPH0322539A (ja) 半導体装置の製造方法
JP2000183355A (ja) 半導体集積回路装置の製造方法
JP3387518B2 (ja) 半導体装置
JP2008047586A (ja) 半導体装置およびその製造方法
JP2005056900A (ja) 半導体装置の製造方法
JPH0661254A (ja) 半導体装置の製造方法
JP2008187008A (ja) 半導体装置及びその製造方法
JP2001102583A (ja) Ｍｏｓｆｅｔの製造を目的とした置き換えゲートとしてシリコンゲルマニウムおよびその他の合金の使用
KR100246334B1 (ko) 씨모스 트랜지스터 제조방법
JP2009117402A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040625

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040625

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20050414

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050427

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20050606

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060418

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060619

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070323

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070523

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20070604

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20070622