JP2003234536A - レーザーダイオードの回折格子製造方法 - Google Patents

レーザーダイオードの回折格子製造方法

Info

Publication number
JP2003234536A
JP2003234536A JP2003020215A JP2003020215A JP2003234536A JP 2003234536 A JP2003234536 A JP 2003234536A JP 2003020215 A JP2003020215 A JP 2003020215A JP 2003020215 A JP2003020215 A JP 2003020215A JP 2003234536 A JP2003234536 A JP 2003234536A
Authority
JP
Japan
Prior art keywords
diffraction grating
layer
laser diode
etching
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003020215A
Other languages
English (en)
Japanese (ja)
Inventor
Jung-Koo Kang
重求 姜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2003234536A publication Critical patent/JP2003234536A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
JP2003020215A 2002-02-01 2003-01-29 レーザーダイオードの回折格子製造方法 Pending JP2003234536A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2002-5872 2002-02-01
KR10-2002-0005872A KR100464353B1 (ko) 2002-02-01 2002-02-01 레이저다이오드의 회절격자 제조방법

Publications (1)

Publication Number Publication Date
JP2003234536A true JP2003234536A (ja) 2003-08-22

Family

ID=27656358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003020215A Pending JP2003234536A (ja) 2002-02-01 2003-01-29 レーザーダイオードの回折格子製造方法

Country Status (3)

Country Link
US (1) US6897080B2 (ko)
JP (1) JP2003234536A (ko)
KR (1) KR100464353B1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017202807B4 (de) 2017-02-21 2019-03-21 Dialog Semiconductor (Uk) Limited Spannungsregulierer mit verbesserter Treiberstufe
KR200496755Y1 (ko) 2021-12-03 2023-04-18 김완수 변기커버 젖힘 기능을 갖는 슬리퍼

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01126606A (ja) * 1987-11-11 1989-05-18 Nippon Sheet Glass Co Ltd 回折格子の製造方法
JPH06347628A (ja) * 1993-06-11 1994-12-22 Canon Inc 回折格子の形成方法
JPH07198922A (ja) * 1994-01-07 1995-08-01 Canon Inc 回折格子の作製方法
JP3714430B2 (ja) * 1996-04-15 2005-11-09 シャープ株式会社 分布帰還型半導体レーザ装置
JP3298619B2 (ja) * 1998-06-10 2002-07-02 日本電気株式会社 半導体レーザの製造方法
KR100424774B1 (ko) * 1998-07-22 2004-05-17 삼성전자주식회사 선택영역회절격자형성과선택영역성장을위한마스크및이를이용한반도체소자의제조방법
JP2000277869A (ja) * 1999-03-29 2000-10-06 Mitsubishi Electric Corp 変調器集積型半導体レーザ装置及びその製造方法
JP2003023209A (ja) * 2001-07-06 2003-01-24 Furukawa Electric Co Ltd:The 半導体素子の製造方法および半導体素子
US6829285B2 (en) * 2001-09-28 2004-12-07 The Furukawa Electric Co., Ltd. Semiconductor laser device and method for effectively reducing facet reflectivity
US6750478B2 (en) * 2001-09-28 2004-06-15 The Furukawa Electric Co., Ltd. Semiconductor laser device and method for suppressing fabry perot oscillations
KR100453814B1 (ko) * 2002-02-07 2004-10-20 한국전자통신연구원 이종 회절격자를 가지는 반도체 광소자 및 그 제조 방법

Also Published As

Publication number Publication date
US20030147447A1 (en) 2003-08-07
US6897080B2 (en) 2005-05-24
KR100464353B1 (ko) 2005-01-03
KR20030065839A (ko) 2003-08-09

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