JP2003078043A5 - - Google Patents

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Publication number
JP2003078043A5
JP2003078043A5 JP2001264754A JP2001264754A JP2003078043A5 JP 2003078043 A5 JP2003078043 A5 JP 2003078043A5 JP 2001264754 A JP2001264754 A JP 2001264754A JP 2001264754 A JP2001264754 A JP 2001264754A JP 2003078043 A5 JP2003078043 A5 JP 2003078043A5
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JP
Japan
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JP2001264754A
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JP4198903B2 (ja
JP2003078043A (ja
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Priority claimed from JP2001264754A external-priority patent/JP4198903B2/ja
Priority to JP2001264754A priority Critical patent/JP4198903B2/ja
Priority to US10/230,092 priority patent/US20030042558A1/en
Priority to KR1020020052175A priority patent/KR20030019259A/ko
Priority to TW091119793A priority patent/TW569428B/zh
Priority to CNB021322171A priority patent/CN100334734C/zh
Publication of JP2003078043A publication Critical patent/JP2003078043A/ja
Publication of JP2003078043A5 publication Critical patent/JP2003078043A5/ja
Publication of JP4198903B2 publication Critical patent/JP4198903B2/ja
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Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001264754A 2001-08-31 2001-08-31 半導体記憶装置 Expired - Fee Related JP4198903B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001264754A JP4198903B2 (ja) 2001-08-31 2001-08-31 半導体記憶装置
US10/230,092 US20030042558A1 (en) 2001-08-31 2002-08-29 Nonvolatile semiconductor memory device having erasing characteristic improved
CNB021322171A CN100334734C (zh) 2001-08-31 2002-08-30 半导体存储单元和半导体存储装置
TW091119793A TW569428B (en) 2001-08-31 2002-08-30 Semiconductor memory cell and semiconductor memory device
KR1020020052175A KR20030019259A (ko) 2001-08-31 2002-08-30 반도체 메모리 셀 및 반도체 기억 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001264754A JP4198903B2 (ja) 2001-08-31 2001-08-31 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2003078043A JP2003078043A (ja) 2003-03-14
JP2003078043A5 true JP2003078043A5 (ja) 2007-07-26
JP4198903B2 JP4198903B2 (ja) 2008-12-17

Family

ID=19091306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001264754A Expired - Fee Related JP4198903B2 (ja) 2001-08-31 2001-08-31 半導体記憶装置

Country Status (5)

Country Link
US (1) US20030042558A1 (ja)
JP (1) JP4198903B2 (ja)
KR (1) KR20030019259A (ja)
CN (1) CN100334734C (ja)
TW (1) TW569428B (ja)

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US8410543B2 (en) 2007-02-01 2013-04-02 Renesas Electronics Corporation Semiconductor storage device and manufacturing method thereof
JP5149539B2 (ja) * 2007-05-21 2013-02-20 ルネサスエレクトロニクス株式会社 半導体装置
US7875516B2 (en) * 2007-09-14 2011-01-25 Qimonda Ag Integrated circuit including a first gate stack and a second gate stack and a method of manufacturing
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JP2010067854A (ja) 2008-09-11 2010-03-25 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
JP2011071240A (ja) * 2009-09-24 2011-04-07 Toshiba Corp 半導体記憶装置、及びその製造方法
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CN101814509A (zh) * 2010-04-15 2010-08-25 复旦大学 一种半导体器件结构及其制备方法
US8598032B2 (en) * 2011-01-19 2013-12-03 Macronix International Co., Ltd Reduced number of masks for IC device with stacked contact levels
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JP5930650B2 (ja) * 2011-10-07 2016-06-08 キヤノン株式会社 半導体装置の製造方法
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