JP2003077267A5 - - Google Patents

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Publication number
JP2003077267A5
JP2003077267A5 JP2001267778A JP2001267778A JP2003077267A5 JP 2003077267 A5 JP2003077267 A5 JP 2003077267A5 JP 2001267778 A JP2001267778 A JP 2001267778A JP 2001267778 A JP2001267778 A JP 2001267778A JP 2003077267 A5 JP2003077267 A5 JP 2003077267A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2001267778A
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JP4780874B2 (ja
JP2003077267A (ja
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Priority claimed from JP2001267778A external-priority patent/JP4780874B2/ja
Priority to JP2001267778A priority Critical patent/JP4780874B2/ja
Priority to US10/207,900 priority patent/US6999341B2/en
Priority to DE10235467A priority patent/DE10235467A1/de
Priority to TW091119032A priority patent/TW567490B/zh
Priority to KR1020020052872A priority patent/KR100540403B1/ko
Priority to CNB021322945A priority patent/CN1252727C/zh
Publication of JP2003077267A publication Critical patent/JP2003077267A/ja
Priority to US11/313,957 priority patent/US20060120150A1/en
Publication of JP2003077267A5 publication Critical patent/JP2003077267A5/ja
Publication of JP4780874B2 publication Critical patent/JP4780874B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001267778A 2001-09-04 2001-09-04 薄膜磁性体記憶装置 Expired - Fee Related JP4780874B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001267778A JP4780874B2 (ja) 2001-09-04 2001-09-04 薄膜磁性体記憶装置
US10/207,900 US6999341B2 (en) 2001-09-04 2002-07-31 Thin-film magnetic memory device with memory cells having magnetic tunnel junction
DE10235467A DE10235467A1 (de) 2001-09-04 2002-08-02 Dünnfilm-Magnetspeichervorrichtung mit Speicherzellen mit Magnettunnelübergang
TW091119032A TW567490B (en) 2001-09-04 2002-08-22 Thin-film magnetic memory device
KR1020020052872A KR100540403B1 (ko) 2001-09-04 2002-09-03 자기 터널 접합을 갖는 메모리 셀을 구비한 박막 자성체기억 장치
CNB021322945A CN1252727C (zh) 2001-09-04 2002-09-04 包含具有磁隧道结的存储单元的薄膜磁性体存储装置
US11/313,957 US20060120150A1 (en) 2001-09-04 2005-12-22 Thin-film magnetic memory device with memory cells having magnetic tunnel junction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001267778A JP4780874B2 (ja) 2001-09-04 2001-09-04 薄膜磁性体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011118954A Division JP5192566B2 (ja) 2011-05-27 2011-05-27 薄膜磁性体記憶装置

Publications (3)

Publication Number Publication Date
JP2003077267A JP2003077267A (ja) 2003-03-14
JP2003077267A5 true JP2003077267A5 (ja) 2008-09-25
JP4780874B2 JP4780874B2 (ja) 2011-09-28

Family

ID=19093866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001267778A Expired - Fee Related JP4780874B2 (ja) 2001-09-04 2001-09-04 薄膜磁性体記憶装置

Country Status (6)

Country Link
US (2) US6999341B2 (ja)
JP (1) JP4780874B2 (ja)
KR (1) KR100540403B1 (ja)
CN (1) CN1252727C (ja)
DE (1) DE10235467A1 (ja)
TW (1) TW567490B (ja)

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JP4780874B2 (ja) * 2001-09-04 2011-09-28 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP2003242771A (ja) 2002-02-15 2003-08-29 Toshiba Corp 半導体記憶装置
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JP4008857B2 (ja) * 2003-03-24 2007-11-14 株式会社東芝 半導体記憶装置及びその製造方法
EP1673782B1 (en) * 2003-09-23 2009-12-30 Applied Spintronics Technology, Inc. Mram array with segmented word and bit lines
US7372722B2 (en) * 2003-09-29 2008-05-13 Samsung Electronics Co., Ltd. Methods of operating magnetic random access memory devices including heat-generating structures
KR100615089B1 (ko) * 2004-07-14 2006-08-23 삼성전자주식회사 낮은 구동 전류를 갖는 자기 램
US7369428B2 (en) * 2003-09-29 2008-05-06 Samsung Electronics Co., Ltd. Methods of operating a magnetic random access memory device and related devices and structures
KR100527536B1 (ko) * 2003-12-24 2005-11-09 주식회사 하이닉스반도체 마그네틱 램
JP3935150B2 (ja) * 2004-01-20 2007-06-20 株式会社東芝 磁気ランダムアクセスメモリ
JP4553620B2 (ja) * 2004-04-06 2010-09-29 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
US7372728B2 (en) * 2004-06-16 2008-05-13 Stmicroelectronics, Inc. Magnetic random access memory array having bit/word lines for shared write select and read operations
US7646628B2 (en) 2005-02-09 2010-01-12 Nec Corporation Toggle magnetic random access memory and write method of toggle magnetic random access memory
KR100688540B1 (ko) * 2005-03-24 2007-03-02 삼성전자주식회사 메모리 셀의 집적도를 향상시킨 반도체 메모리 장치
KR100655438B1 (ko) 2005-08-25 2006-12-08 삼성전자주식회사 자기 기억 소자 및 그 형성 방법
JP5035620B2 (ja) 2005-09-14 2012-09-26 日本電気株式会社 磁気ランダムアクセスメモリの波形整形回路
KR100735748B1 (ko) * 2005-11-09 2007-07-06 삼성전자주식회사 가변성 저항체들을 데이터 저장요소들로 채택하는 메모리셀들을 갖는 반도체 소자들, 이를 채택하는 시스템들 및 그구동방법들
KR100899392B1 (ko) 2007-08-20 2009-05-27 주식회사 하이닉스반도체 리프레시 특성 테스트 회로 및 이를 이용한 리프레시 특성테스트 방법
US7872907B2 (en) 2007-12-28 2011-01-18 Renesas Electronics Corporation Semiconductor device
JP5222619B2 (ja) 2008-05-02 2013-06-26 株式会社日立製作所 半導体装置
KR100950485B1 (ko) * 2008-06-27 2010-03-31 주식회사 하이닉스반도체 리프레시 특성 테스트 회로
KR101264518B1 (ko) 2008-10-06 2013-05-14 가부시키가이샤 히타치세이사쿠쇼 반도체 장치
US8040719B2 (en) * 2008-11-26 2011-10-18 Samsung Electronics Co., Ltd. Nonvolatile memory devices having bit line discharge control circuits therein that provide equivalent bit line discharge control
JP5915121B2 (ja) * 2011-11-30 2016-05-11 凸版印刷株式会社 抵抗変化型不揮発性メモリ
KR102017736B1 (ko) * 2012-12-20 2019-10-21 에스케이하이닉스 주식회사 코어 회로, 메모리 및 이를 포함하는 메모리 시스템
US8929153B1 (en) * 2013-08-23 2015-01-06 Qualcomm Incorporated Memory with multiple word line design
CN107039067A (zh) * 2015-07-15 2017-08-11 中国科学院微电子研究所 一种存储器及读写方法

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JPS6211262A (ja) * 1985-07-08 1987-01-20 Nec Ic Microcomput Syst Ltd 半導体記憶装置
JPH03235290A (ja) * 1990-02-09 1991-10-21 Mitsubishi Electric Corp 階層的な行選択線を有する半導体記憶装置
JP3392657B2 (ja) * 1996-09-26 2003-03-31 株式会社東芝 半導体記憶装置
JPH10163451A (ja) * 1996-12-02 1998-06-19 Hitachi Ltd 半導体記憶装置
JP3252895B2 (ja) * 1997-11-07 2002-02-04 日本電気株式会社 半導体記憶装置及びその駆動方法
US6418043B1 (en) * 1997-12-12 2002-07-09 Hyundai Electronics Industries Co., Ltd. Circuit for driving nonvolatile ferroelectric memory
US5946227A (en) * 1998-07-20 1999-08-31 Motorola, Inc. Magnetoresistive random access memory with shared word and digit lines
US6111781A (en) * 1998-08-03 2000-08-29 Motorola, Inc. Magnetic random access memory array divided into a plurality of memory banks
US6191972B1 (en) * 1999-04-30 2001-02-20 Nec Corporation Magnetic random access memory circuit
US6249464B1 (en) * 1999-12-15 2001-06-19 Cypress Semiconductor Corp. Block redundancy in ultra low power memory circuits
JP3913971B2 (ja) * 1999-12-16 2007-05-09 株式会社東芝 磁気メモリ装置
US6331943B1 (en) * 2000-08-28 2001-12-18 Motorola, Inc. MTJ MRAM series-parallel architecture
JP2002170377A (ja) * 2000-09-22 2002-06-14 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US6335890B1 (en) * 2000-11-01 2002-01-01 International Business Machines Corporation Segmented write line architecture for writing magnetic random access memories
DE10054520C1 (de) * 2000-11-03 2002-03-21 Infineon Technologies Ag Datenspeicher mit mehreren Bänken
JP4726292B2 (ja) * 2000-11-14 2011-07-20 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP4667594B2 (ja) * 2000-12-25 2011-04-13 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP4818519B2 (ja) * 2001-02-06 2011-11-16 ルネサスエレクトロニクス株式会社 磁気記憶装置
US6490217B1 (en) * 2001-05-23 2002-12-03 International Business Machines Corporation Select line architecture for magnetic random access memories
JP4780878B2 (ja) * 2001-08-02 2011-09-28 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP4780874B2 (ja) * 2001-09-04 2011-09-28 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置

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