JP2003077267A5 - - Google Patents
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- JP2003077267A5 JP2003077267A5 JP2001267778A JP2001267778A JP2003077267A5 JP 2003077267 A5 JP2003077267 A5 JP 2003077267A5 JP 2001267778 A JP2001267778 A JP 2001267778A JP 2001267778 A JP2001267778 A JP 2001267778A JP 2003077267 A5 JP2003077267 A5 JP 2003077267A5
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Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001267778A JP4780874B2 (ja) | 2001-09-04 | 2001-09-04 | 薄膜磁性体記憶装置 |
US10/207,900 US6999341B2 (en) | 2001-09-04 | 2002-07-31 | Thin-film magnetic memory device with memory cells having magnetic tunnel junction |
DE10235467A DE10235467A1 (de) | 2001-09-04 | 2002-08-02 | Dünnfilm-Magnetspeichervorrichtung mit Speicherzellen mit Magnettunnelübergang |
TW091119032A TW567490B (en) | 2001-09-04 | 2002-08-22 | Thin-film magnetic memory device |
KR1020020052872A KR100540403B1 (ko) | 2001-09-04 | 2002-09-03 | 자기 터널 접합을 갖는 메모리 셀을 구비한 박막 자성체기억 장치 |
CNB021322945A CN1252727C (zh) | 2001-09-04 | 2002-09-04 | 包含具有磁隧道结的存储单元的薄膜磁性体存储装置 |
US11/313,957 US20060120150A1 (en) | 2001-09-04 | 2005-12-22 | Thin-film magnetic memory device with memory cells having magnetic tunnel junction |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001267778A JP4780874B2 (ja) | 2001-09-04 | 2001-09-04 | 薄膜磁性体記憶装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011118954A Division JP5192566B2 (ja) | 2011-05-27 | 2011-05-27 | 薄膜磁性体記憶装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003077267A JP2003077267A (ja) | 2003-03-14 |
JP2003077267A5 true JP2003077267A5 (ja) | 2008-09-25 |
JP4780874B2 JP4780874B2 (ja) | 2011-09-28 |
Family
ID=19093866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001267778A Expired - Fee Related JP4780874B2 (ja) | 2001-09-04 | 2001-09-04 | 薄膜磁性体記憶装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US6999341B2 (ja) |
JP (1) | JP4780874B2 (ja) |
KR (1) | KR100540403B1 (ja) |
CN (1) | CN1252727C (ja) |
DE (1) | DE10235467A1 (ja) |
TW (1) | TW567490B (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4780874B2 (ja) * | 2001-09-04 | 2011-09-28 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP2003242771A (ja) | 2002-02-15 | 2003-08-29 | Toshiba Corp | 半導体記憶装置 |
US6870759B2 (en) * | 2002-12-09 | 2005-03-22 | Applied Spintronics Technology, Inc. | MRAM array with segmented magnetic write lines |
JP4008857B2 (ja) * | 2003-03-24 | 2007-11-14 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
EP1673782B1 (en) * | 2003-09-23 | 2009-12-30 | Applied Spintronics Technology, Inc. | Mram array with segmented word and bit lines |
US7372722B2 (en) * | 2003-09-29 | 2008-05-13 | Samsung Electronics Co., Ltd. | Methods of operating magnetic random access memory devices including heat-generating structures |
KR100615089B1 (ko) * | 2004-07-14 | 2006-08-23 | 삼성전자주식회사 | 낮은 구동 전류를 갖는 자기 램 |
US7369428B2 (en) * | 2003-09-29 | 2008-05-06 | Samsung Electronics Co., Ltd. | Methods of operating a magnetic random access memory device and related devices and structures |
KR100527536B1 (ko) * | 2003-12-24 | 2005-11-09 | 주식회사 하이닉스반도체 | 마그네틱 램 |
JP3935150B2 (ja) * | 2004-01-20 | 2007-06-20 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
JP4553620B2 (ja) * | 2004-04-06 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
US7372728B2 (en) * | 2004-06-16 | 2008-05-13 | Stmicroelectronics, Inc. | Magnetic random access memory array having bit/word lines for shared write select and read operations |
US7646628B2 (en) | 2005-02-09 | 2010-01-12 | Nec Corporation | Toggle magnetic random access memory and write method of toggle magnetic random access memory |
KR100688540B1 (ko) * | 2005-03-24 | 2007-03-02 | 삼성전자주식회사 | 메모리 셀의 집적도를 향상시킨 반도체 메모리 장치 |
KR100655438B1 (ko) | 2005-08-25 | 2006-12-08 | 삼성전자주식회사 | 자기 기억 소자 및 그 형성 방법 |
JP5035620B2 (ja) | 2005-09-14 | 2012-09-26 | 日本電気株式会社 | 磁気ランダムアクセスメモリの波形整形回路 |
KR100735748B1 (ko) * | 2005-11-09 | 2007-07-06 | 삼성전자주식회사 | 가변성 저항체들을 데이터 저장요소들로 채택하는 메모리셀들을 갖는 반도체 소자들, 이를 채택하는 시스템들 및 그구동방법들 |
KR100899392B1 (ko) | 2007-08-20 | 2009-05-27 | 주식회사 하이닉스반도체 | 리프레시 특성 테스트 회로 및 이를 이용한 리프레시 특성테스트 방법 |
US7872907B2 (en) | 2007-12-28 | 2011-01-18 | Renesas Electronics Corporation | Semiconductor device |
JP5222619B2 (ja) | 2008-05-02 | 2013-06-26 | 株式会社日立製作所 | 半導体装置 |
KR100950485B1 (ko) * | 2008-06-27 | 2010-03-31 | 주식회사 하이닉스반도체 | 리프레시 특성 테스트 회로 |
KR101264518B1 (ko) | 2008-10-06 | 2013-05-14 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 장치 |
US8040719B2 (en) * | 2008-11-26 | 2011-10-18 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices having bit line discharge control circuits therein that provide equivalent bit line discharge control |
JP5915121B2 (ja) * | 2011-11-30 | 2016-05-11 | 凸版印刷株式会社 | 抵抗変化型不揮発性メモリ |
KR102017736B1 (ko) * | 2012-12-20 | 2019-10-21 | 에스케이하이닉스 주식회사 | 코어 회로, 메모리 및 이를 포함하는 메모리 시스템 |
US8929153B1 (en) * | 2013-08-23 | 2015-01-06 | Qualcomm Incorporated | Memory with multiple word line design |
CN107039067A (zh) * | 2015-07-15 | 2017-08-11 | 中国科学院微电子研究所 | 一种存储器及读写方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6211262A (ja) * | 1985-07-08 | 1987-01-20 | Nec Ic Microcomput Syst Ltd | 半導体記憶装置 |
JPH03235290A (ja) * | 1990-02-09 | 1991-10-21 | Mitsubishi Electric Corp | 階層的な行選択線を有する半導体記憶装置 |
JP3392657B2 (ja) * | 1996-09-26 | 2003-03-31 | 株式会社東芝 | 半導体記憶装置 |
JPH10163451A (ja) * | 1996-12-02 | 1998-06-19 | Hitachi Ltd | 半導体記憶装置 |
JP3252895B2 (ja) * | 1997-11-07 | 2002-02-04 | 日本電気株式会社 | 半導体記憶装置及びその駆動方法 |
US6418043B1 (en) * | 1997-12-12 | 2002-07-09 | Hyundai Electronics Industries Co., Ltd. | Circuit for driving nonvolatile ferroelectric memory |
US5946227A (en) * | 1998-07-20 | 1999-08-31 | Motorola, Inc. | Magnetoresistive random access memory with shared word and digit lines |
US6111781A (en) * | 1998-08-03 | 2000-08-29 | Motorola, Inc. | Magnetic random access memory array divided into a plurality of memory banks |
US6191972B1 (en) * | 1999-04-30 | 2001-02-20 | Nec Corporation | Magnetic random access memory circuit |
US6249464B1 (en) * | 1999-12-15 | 2001-06-19 | Cypress Semiconductor Corp. | Block redundancy in ultra low power memory circuits |
JP3913971B2 (ja) * | 1999-12-16 | 2007-05-09 | 株式会社東芝 | 磁気メモリ装置 |
US6331943B1 (en) * | 2000-08-28 | 2001-12-18 | Motorola, Inc. | MTJ MRAM series-parallel architecture |
JP2002170377A (ja) * | 2000-09-22 | 2002-06-14 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
US6335890B1 (en) * | 2000-11-01 | 2002-01-01 | International Business Machines Corporation | Segmented write line architecture for writing magnetic random access memories |
DE10054520C1 (de) * | 2000-11-03 | 2002-03-21 | Infineon Technologies Ag | Datenspeicher mit mehreren Bänken |
JP4726292B2 (ja) * | 2000-11-14 | 2011-07-20 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP4667594B2 (ja) * | 2000-12-25 | 2011-04-13 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP4818519B2 (ja) * | 2001-02-06 | 2011-11-16 | ルネサスエレクトロニクス株式会社 | 磁気記憶装置 |
US6490217B1 (en) * | 2001-05-23 | 2002-12-03 | International Business Machines Corporation | Select line architecture for magnetic random access memories |
JP4780878B2 (ja) * | 2001-08-02 | 2011-09-28 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP4780874B2 (ja) * | 2001-09-04 | 2011-09-28 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
-
2001
- 2001-09-04 JP JP2001267778A patent/JP4780874B2/ja not_active Expired - Fee Related
-
2002
- 2002-07-31 US US10/207,900 patent/US6999341B2/en not_active Expired - Lifetime
- 2002-08-02 DE DE10235467A patent/DE10235467A1/de not_active Ceased
- 2002-08-22 TW TW091119032A patent/TW567490B/zh not_active IP Right Cessation
- 2002-09-03 KR KR1020020052872A patent/KR100540403B1/ko not_active IP Right Cessation
- 2002-09-04 CN CNB021322945A patent/CN1252727C/zh not_active Expired - Fee Related
-
2005
- 2005-12-22 US US11/313,957 patent/US20060120150A1/en not_active Abandoned