JP2003064090A5 - - Google Patents
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- Publication number
- JP2003064090A5 JP2003064090A5 JP2002103727A JP2002103727A JP2003064090A5 JP 2003064090 A5 JP2003064090 A5 JP 2003064090A5 JP 2002103727 A JP2002103727 A JP 2002103727A JP 2002103727 A JP2002103727 A JP 2002103727A JP 2003064090 A5 JP2003064090 A5 JP 2003064090A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- metal
- metal compound
- substrate
- trihalide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 10
- 150000002736 metal compounds Chemical class 0.000 claims 9
- 238000000151 deposition Methods 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 7
- 239000002184 metal Substances 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 6
- 230000008021 deposition Effects 0.000 claims 4
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 239000002904 solvent Substances 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000003960 organic solvent Substances 0.000 claims 2
- 150000003512 tertiary amines Chemical class 0.000 claims 2
- 239000012808 vapor phase Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical group 0.000 claims 1
- 125000000623 heterocyclic group Chemical group 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000006467 substitution reaction Methods 0.000 claims 1
- 229910052716 thallium Inorganic materials 0.000 claims 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28197701P | 2001-04-06 | 2001-04-06 | |
| US60/281977 | 2001-04-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003064090A JP2003064090A (ja) | 2003-03-05 |
| JP2003064090A5 true JP2003064090A5 (enExample) | 2005-09-15 |
Family
ID=23079564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002103727A Pending JP2003064090A (ja) | 2001-04-06 | 2002-04-05 | トリアルキルｖａ族金属化合物 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6660874B2 (enExample) |
| EP (1) | EP1247813B1 (enExample) |
| JP (1) | JP2003064090A (enExample) |
| KR (1) | KR100852361B1 (enExample) |
| CN (1) | CN1259326C (enExample) |
| DE (1) | DE60215408T2 (enExample) |
| TW (1) | TWI239334B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6787181B2 (en) * | 2001-10-26 | 2004-09-07 | Symetrix Corporation | Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth |
| US6956127B2 (en) * | 2002-01-17 | 2005-10-18 | Shipley Company, L.L.C. | Alkyl group VA metal compounds |
| US20030171879A1 (en) * | 2002-03-08 | 2003-09-11 | Pittalwala Shabbir H. | System and method to accomplish pipeline reliability |
| US6939983B2 (en) * | 2003-05-08 | 2005-09-06 | Rohm And Haas Electronic Materials, Llc | Alkyl group VA metal compounds |
| TW200619222A (en) * | 2004-09-02 | 2006-06-16 | Rohm & Haas Elect Mat | Method for making organometallic compounds |
| TWI632149B (zh) * | 2011-11-28 | 2018-08-11 | 烏明克股份有限兩合公司 | 第iii a族金屬的三烷基化合物之製法 |
| WO2014093419A1 (en) | 2012-12-12 | 2014-06-19 | Dow Global Technologies Llc | Production of tri-alkyl compounds of group 3a metals |
| JP2015082573A (ja) | 2013-10-22 | 2015-04-27 | 住友電気工業株式会社 | エピタキシャルウエハおよびその製造方法 |
| CN106349293B (zh) * | 2016-08-27 | 2018-07-06 | 广东先导稀材股份有限公司 | 高纯三乙基锑的制备方法 |
| EP3587430B1 (de) * | 2018-06-26 | 2022-07-13 | KE Materials L.L.C. | Herstellung von trialkylpnictogen |
| CN110950911B (zh) * | 2018-09-26 | 2021-10-08 | 紫石能源有限公司 | 三甲基胂的制备方法 |
| CN110483580B (zh) * | 2019-09-06 | 2022-04-19 | 广东先导微电子科技有限公司 | 一种高纯度三烷基锑及其制备方法与应用 |
| CN113583051B (zh) * | 2021-08-03 | 2022-09-02 | 安徽亚格盛电子新材料有限公司 | 利用三甲基铝和三氯化锑制备高纯度三甲基锑的方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3103526A (en) * | 1963-09-10 | Preparation of alkyl compounds of | ||
| GB974056A (enExample) * | 1961-11-16 | 1900-01-01 | ||
| JP2561482B2 (ja) | 1987-08-27 | 1996-12-11 | 住友化学工業株式会社 | トリアルキル砒素化合物の製造方法 |
| US4857655A (en) * | 1988-01-20 | 1989-08-15 | American Cyanamid Company | Process for making alkyl arsine compounds |
| DE4214224A1 (de) * | 1992-04-30 | 1993-11-04 | Merck Patent Gmbh | Verwendung von elementorganischen verbindungen zur abscheidung des elementes auf substraten |
| US5326425A (en) * | 1993-01-28 | 1994-07-05 | The United States Of America As Represented By The Secretary Of The Navy | Preparation of tertiarybutyldimethylantimony and use thereof |
-
2002
- 2002-04-03 KR KR1020020018149A patent/KR100852361B1/ko not_active Expired - Fee Related
- 2002-04-04 TW TW091106812A patent/TWI239334B/zh not_active IP Right Cessation
- 2002-04-05 JP JP2002103727A patent/JP2003064090A/ja active Pending
- 2002-04-05 EP EP02252450A patent/EP1247813B1/en not_active Expired - Lifetime
- 2002-04-05 CN CNB021413436A patent/CN1259326C/zh not_active Expired - Fee Related
- 2002-04-05 DE DE60215408T patent/DE60215408T2/de not_active Expired - Fee Related
- 2002-04-06 US US10/118,382 patent/US6660874B2/en not_active Expired - Fee Related
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