JP2002530890A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2002530890A5 JP2002530890A5 JP2000584527A JP2000584527A JP2002530890A5 JP 2002530890 A5 JP2002530890 A5 JP 2002530890A5 JP 2000584527 A JP2000584527 A JP 2000584527A JP 2000584527 A JP2000584527 A JP 2000584527A JP 2002530890 A5 JP2002530890 A5 JP 2002530890A5
- Authority
- JP
- Japan
- Prior art keywords
- cmp
- capacitor
- layer
- ferroelectric
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 description 202
- 238000000034 method Methods 0.000 description 180
- 239000003990 capacitor Substances 0.000 description 160
- 239000000463 material Substances 0.000 description 152
- 239000002002 slurry Substances 0.000 description 69
- 230000004888 barrier function Effects 0.000 description 68
- 238000005498 polishing Methods 0.000 description 57
- 230000008569 process Effects 0.000 description 54
- 239000000126 substance Substances 0.000 description 50
- 238000000151 deposition Methods 0.000 description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 44
- 229910052751 metal Inorganic materials 0.000 description 43
- 238000004377 microelectronic Methods 0.000 description 43
- 239000002184 metal Substances 0.000 description 39
- 239000003989 dielectric material Substances 0.000 description 36
- 229910000510 noble metal Inorganic materials 0.000 description 34
- 230000005540 biological transmission Effects 0.000 description 33
- 239000000203 mixture Substances 0.000 description 32
- 239000010408 film Substances 0.000 description 30
- 239000000758 substrate Substances 0.000 description 29
- 238000005229 chemical vapour deposition Methods 0.000 description 28
- 239000000377 silicon dioxide Substances 0.000 description 26
- 238000001312 dry etching Methods 0.000 description 25
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 23
- 229910052681 coesite Inorganic materials 0.000 description 21
- 229910052906 cristobalite Inorganic materials 0.000 description 21
- 238000000059 patterning Methods 0.000 description 21
- 229910052682 stishovite Inorganic materials 0.000 description 21
- 229910052905 tridymite Inorganic materials 0.000 description 21
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 20
- 238000009792 diffusion process Methods 0.000 description 20
- 239000002245 particle Substances 0.000 description 20
- 239000002019 doping agent Substances 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 19
- 238000000137 annealing Methods 0.000 description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 16
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 15
- 230000008021 deposition Effects 0.000 description 15
- 239000004020 conductor Substances 0.000 description 14
- 239000010409 thin film Substances 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 230000006870 function Effects 0.000 description 12
- 150000004767 nitrides Chemical class 0.000 description 12
- 239000002243 precursor Substances 0.000 description 12
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 12
- 229910052721 tungsten Inorganic materials 0.000 description 12
- 238000013459 approach Methods 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000007772 electrode material Substances 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000001465 metallisation Methods 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 229910010037 TiAlN Inorganic materials 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 150000001768 cations Chemical class 0.000 description 9
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 9
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 9
- 230000001590 oxidative effect Effects 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 229910052718 tin Inorganic materials 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 239000002585 base Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 8
- 229910052741 iridium Inorganic materials 0.000 description 8
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 8
- 239000003607 modifier Substances 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 229910000859 α-Fe Inorganic materials 0.000 description 8
- 239000000654 additive Substances 0.000 description 7
- 239000006227 byproduct Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 229910003460 diamond Inorganic materials 0.000 description 7
- 239000010432 diamond Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 230000015654 memory Effects 0.000 description 7
- 150000001247 metal acetylides Chemical class 0.000 description 7
- 238000000465 moulding Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 239000012779 reinforcing material Substances 0.000 description 7
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 230000000996 additive effect Effects 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910002115 bismuth titanate Inorganic materials 0.000 description 6
- 230000003750 conditioning effect Effects 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000002159 nanocrystal Substances 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 238000004151 rapid thermal annealing Methods 0.000 description 6
- 229910008482 TiSiN Inorganic materials 0.000 description 5
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- HTXDPTMKBJXEOW-UHFFFAOYSA-N iridium(IV) oxide Inorganic materials O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 5
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- 230000035699 permeability Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910002651 NO3 Inorganic materials 0.000 description 4
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000002708 enhancing effect Effects 0.000 description 4
- 229910052745 lead Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 238000007493 shaping process Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 description 4
- 229910018182 Al—Cu Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- -1 C6H5NCO Chemical compound 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910021575 Iron(II) bromide Inorganic materials 0.000 description 3
- 229910021577 Iron(II) chloride Inorganic materials 0.000 description 3
- 229910021579 Iron(II) iodide Inorganic materials 0.000 description 3
- 229910021576 Iron(III) bromide Inorganic materials 0.000 description 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 3
- 229910017916 MgMn Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 125000000350 glycoloyl group Chemical group O=C([*])C([H])([H])O[H] 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 3
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 3
- 229910000360 iron(III) sulfate Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- FEONEKOZSGPOFN-UHFFFAOYSA-K tribromoiron Chemical compound Br[Fe](Br)Br FEONEKOZSGPOFN-UHFFFAOYSA-K 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910015801 BaSrTiO Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- CRXSVCPVXXWGCV-UHFFFAOYSA-N [Ca+2].[La+3].[O-][Mn]([O-])(=O)=O Chemical compound [Ca+2].[La+3].[O-][Mn]([O-])(=O)=O CRXSVCPVXXWGCV-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012625 in-situ measurement Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 2
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910003638 H2SiF6 Inorganic materials 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910002848 Pt–Ru Inorganic materials 0.000 description 1
- 229910006124 SOCl2 Inorganic materials 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000002015 acyclic group Chemical group 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000002421 cell wall Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006757 chemical reactions by type Methods 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000012777 commercial manufacturing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- ATDGTVJJHBUTRL-UHFFFAOYSA-N cyanogen bromide Chemical compound BrC#N ATDGTVJJHBUTRL-UHFFFAOYSA-N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000006392 deoxygenation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- HAMGRBXTJNITHG-UHFFFAOYSA-N methyl isocyanate Chemical compound CN=C=O HAMGRBXTJNITHG-UHFFFAOYSA-N 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000013110 organic ligand Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- DTMHTVJOHYTUHE-UHFFFAOYSA-N thiocyanogen Chemical compound N#CSSC#N DTMHTVJOHYTUHE-UHFFFAOYSA-N 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000010977 unit operation Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/200,499 US6346741B1 (en) | 1997-11-20 | 1998-11-25 | Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same |
| US09/200,499 | 1998-11-25 | ||
| PCT/US1999/027754 WO2000031794A1 (en) | 1998-11-25 | 1999-11-23 | Chemical mechanical polishing of feram capacitors |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002530890A JP2002530890A (ja) | 2002-09-17 |
| JP2002530890A5 true JP2002530890A5 (enExample) | 2012-11-01 |
| JP5128731B2 JP5128731B2 (ja) | 2013-01-23 |
Family
ID=22741982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000584527A Expired - Lifetime JP5128731B2 (ja) | 1998-11-25 | 1999-11-23 | Ｆｅｒａｍコンデンサの化学的機械研磨 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6346741B1 (enExample) |
| EP (1) | EP1133792A4 (enExample) |
| JP (1) | JP5128731B2 (enExample) |
| KR (1) | KR20010089510A (enExample) |
| WO (1) | WO2000031794A1 (enExample) |
Families Citing this family (118)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7012292B1 (en) * | 1998-11-25 | 2006-03-14 | Advanced Technology Materials, Inc | Oxidative top electrode deposition process, and microelectronic device structure |
| JP2004514266A (ja) * | 1999-12-14 | 2004-05-13 | ロデール ホールディングス インコーポレイテッド | 貴金属用研磨組成物 |
| US6743395B2 (en) * | 2000-03-22 | 2004-06-01 | Ebara Corporation | Composite metallic ultrafine particles and process for producing the same |
| DE10022655C2 (de) * | 2000-04-28 | 2002-03-07 | Infineon Technologies Ag | Verfahren zur Herstellung von Kondensatorstrukturen |
| DE10022656B4 (de) * | 2000-04-28 | 2006-07-06 | Infineon Technologies Ag | Verfahren zum Entfernen von Strukturen |
| KR100762863B1 (ko) * | 2000-06-30 | 2007-10-08 | 주식회사 하이닉스반도체 | 확산방지 티타늄-실리콘-질소 막을 이용한 구리금속배선방법 |
| US6524912B1 (en) | 2000-08-31 | 2003-02-25 | Micron Technology, Inc. | Planarization of metal container structures |
| JP2002110932A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | 半導体装置及びその製造方法 |
| US6642552B2 (en) * | 2001-02-02 | 2003-11-04 | Grail Semiconductor | Inductive storage capacitor |
| US6653154B2 (en) * | 2001-03-15 | 2003-11-25 | Micron Technology, Inc. | Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure |
| US7084080B2 (en) * | 2001-03-30 | 2006-08-01 | Advanced Technology Materials, Inc. | Silicon source reagent compositions, and method of making and using same for microelectronic device structure |
| CN100403450C (zh) * | 2001-05-07 | 2008-07-16 | 先进微装置公司 | 具有自组装聚合物薄膜的内存装置及其制造方法 |
| US7372160B2 (en) * | 2001-05-31 | 2008-05-13 | Stmicroelectronics, Inc. | Barrier film deposition over metal for reduction in metal dishing after CMP |
| US6790780B2 (en) * | 2001-09-27 | 2004-09-14 | Intel Corporation | Fabrication of 3-D capacitor with dual damascene process |
| KR100428789B1 (ko) * | 2001-12-05 | 2004-04-28 | 삼성전자주식회사 | 금속/절연막/금속 캐퍼시터 구조를 가지는 반도체 장치 및그 형성 방법 |
| US6884723B2 (en) | 2001-12-21 | 2005-04-26 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using complexing agents |
| US20030119316A1 (en) * | 2001-12-21 | 2003-06-26 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using oxidizing agents |
| US7049237B2 (en) | 2001-12-21 | 2006-05-23 | Micron Technology, Inc. | Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases |
| US7121926B2 (en) | 2001-12-21 | 2006-10-17 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article |
| US6730592B2 (en) * | 2001-12-21 | 2004-05-04 | Micron Technology, Inc. | Methods for planarization of metal-containing surfaces using halogens and halide salts |
| US7524346B2 (en) | 2002-01-25 | 2009-04-28 | Dupont Air Products Nanomaterials Llc | Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates |
| JP2003273325A (ja) | 2002-03-15 | 2003-09-26 | Oki Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JP3931113B2 (ja) * | 2002-06-10 | 2007-06-13 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
| KR100500940B1 (ko) * | 2002-06-21 | 2005-07-14 | 주식회사 하이닉스반도체 | 반도체 장치의 캐패시터 제조방법 |
| JP4445191B2 (ja) * | 2002-10-07 | 2010-04-07 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JP2004152864A (ja) * | 2002-10-29 | 2004-05-27 | Renesas Technology Corp | 半導体装置 |
| US7279423B2 (en) * | 2002-10-31 | 2007-10-09 | Intel Corporation | Forming a copper diffusion barrier |
| US7268383B2 (en) * | 2003-02-20 | 2007-09-11 | Infineon Technologies Ag | Capacitor and method of manufacturing a capacitor |
| US6812110B1 (en) * | 2003-05-09 | 2004-11-02 | Micron Technology, Inc. | Methods of forming capacitor constructions, and methods of forming constructions comprising dielectric materials |
| JP2005101213A (ja) * | 2003-09-24 | 2005-04-14 | Toshiba Corp | 半導体装置の製造方法 |
| US7105400B2 (en) * | 2003-09-30 | 2006-09-12 | Kabushiki Kaisha Toshiba | Manufacturing method of semiconductor device |
| US7002196B2 (en) * | 2003-11-13 | 2006-02-21 | Infineon Technologies Ag | Ferroelectric capacitor devices and FeRAM devices |
| JP4785030B2 (ja) | 2005-01-18 | 2011-10-05 | 富士通セミコンダクター株式会社 | 半導体装置とその製造方法 |
| US9312557B2 (en) * | 2005-05-11 | 2016-04-12 | Schlumberger Technology Corporation | Fuel cell apparatus and method for downhole power systems |
| KR100785458B1 (ko) * | 2005-05-18 | 2007-12-13 | 삼성전자주식회사 | 강유전체 박막의 제조 방법 및 이를 이용한 반도체 장치의제조 방법 |
| US20090215269A1 (en) * | 2005-06-06 | 2009-08-27 | Advanced Technology Materials Inc. | Integrated chemical mechanical polishing composition and process for single platen processing |
| CN101356628B (zh) * | 2005-08-05 | 2012-01-04 | 高级技术材料公司 | 用于对金属膜进行平坦化的高通量化学机械抛光组合物 |
| KR100709012B1 (ko) * | 2005-08-10 | 2007-04-18 | 동부일렉트로닉스 주식회사 | 캐패시터 및 그 제조 방법 |
| TWI385226B (zh) | 2005-09-08 | 2013-02-11 | 羅門哈斯電子材料Ｃｍｐ控股公司 | 用於移除聚合物阻障之研磨漿液 |
| FR2897467B1 (fr) * | 2006-02-15 | 2009-04-03 | St Microelectronics Crolles 2 | Condensateur mim |
| US7842990B2 (en) | 2006-02-17 | 2010-11-30 | Hynix Semiconductor Inc. | Nonvolatile ferroelectric memory device including trench capacitor |
| US20070212797A1 (en) * | 2006-03-08 | 2007-09-13 | Suk-Hun Choi | Method of forming a ferroelectric device |
| US7538969B2 (en) * | 2006-08-23 | 2009-05-26 | Imation Corp. | Servo pattern with encoded data |
| US7678700B2 (en) * | 2006-09-05 | 2010-03-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
| US7998866B2 (en) * | 2006-09-05 | 2011-08-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
| TWI562234B (en) * | 2006-12-21 | 2016-12-11 | Entegris Inc | Compositions and methods for the selective removal of silicon nitride |
| US7750173B2 (en) | 2007-01-18 | 2010-07-06 | Advanced Technology Materials, Inc. | Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films |
| US8304909B2 (en) * | 2007-12-19 | 2012-11-06 | Intel Corporation | IC solder reflow method and materials |
| KR101443063B1 (ko) | 2008-07-17 | 2014-09-24 | 삼성전자주식회사 | 강유전체 박막의 형성 방법 및 이를 이용한 반도체 장치의제조 방법 |
| JP2010135453A (ja) * | 2008-12-03 | 2010-06-17 | Renesas Electronics Corp | 半導体装置、半導体装置の製造方法 |
| US8441097B2 (en) * | 2009-12-23 | 2013-05-14 | Intel Corporation | Methods to form memory devices having a capacitor with a recessed electrode |
| US9390909B2 (en) | 2013-11-07 | 2016-07-12 | Novellus Systems, Inc. | Soft landing nanolaminates for advanced patterning |
| US9257274B2 (en) | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
| US9611544B2 (en) | 2010-04-15 | 2017-04-04 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
| US8637411B2 (en) | 2010-04-15 | 2014-01-28 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
| US9997357B2 (en) | 2010-04-15 | 2018-06-12 | Lam Research Corporation | Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors |
| US9373500B2 (en) * | 2014-02-21 | 2016-06-21 | Lam Research Corporation | Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications |
| US9892917B2 (en) | 2010-04-15 | 2018-02-13 | Lam Research Corporation | Plasma assisted atomic layer deposition of multi-layer films for patterning applications |
| TWI536451B (zh) * | 2010-04-26 | 2016-06-01 | 應用材料股份有限公司 | 使用具金屬系前驅物之化學氣相沉積與原子層沉積製程之ｎ型金氧半導體金屬閘極材料、製造方法及設備 |
| JP6101421B2 (ja) | 2010-08-16 | 2017-03-22 | インテグリス・インコーポレーテッド | 銅または銅合金用エッチング液 |
| US9685320B2 (en) | 2010-09-23 | 2017-06-20 | Lam Research Corporation | Methods for depositing silicon oxide |
| KR101300241B1 (ko) | 2011-08-31 | 2013-08-26 | 서울대학교산학협력단 | 강유전체 메모리 소자 및 그의 제조 방법 |
| JP5933950B2 (ja) | 2011-09-30 | 2016-06-15 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | 銅または銅合金用エッチング液 |
| KR102207992B1 (ko) | 2012-10-23 | 2021-01-26 | 램 리써치 코포레이션 | 서브-포화된 원자층 증착 및 등각막 증착 |
| JP6538300B2 (ja) | 2012-11-08 | 2019-07-03 | ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | 感受性基材上にフィルムを蒸着するための方法 |
| WO2014089196A1 (en) | 2012-12-05 | 2014-06-12 | Advanced Technology Materials, Inc. | Compositions for cleaning iii-v semiconductor materials and methods of using same |
| SG11201507014RA (en) | 2013-03-04 | 2015-10-29 | Advanced Tech Materials | Compositions and methods for selectively etching titanium nitride |
| TWI651396B (zh) | 2013-06-06 | 2019-02-21 | 美商恩特葛瑞斯股份有限公司 | 選擇性蝕刻氮化鈦之組成物及方法 |
| EP3027709A4 (en) | 2013-07-31 | 2017-03-29 | Entegris, Inc. | AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY |
| SG10201801575YA (en) | 2013-08-30 | 2018-03-28 | Entegris Inc | Compositions and methods for selectively etching titanium nitride |
| US9159696B2 (en) | 2013-09-13 | 2015-10-13 | GlobalFoundries, Inc. | Plug via formation by patterned plating and polishing |
| WO2015095175A1 (en) | 2013-12-16 | 2015-06-25 | Advanced Technology Materials, Inc. | Ni:nige:ge selective etch formulations and method of using same |
| KR102352475B1 (ko) | 2013-12-20 | 2022-01-18 | 엔테그리스, 아이엔씨. | 이온-주입된 레지스트의 제거를 위한 비-산화성 강산의 용도 |
| WO2015103146A1 (en) | 2013-12-31 | 2015-07-09 | Advanced Technology Materials, Inc. | Formulations to selectively etch silicon and germanium |
| WO2015116818A1 (en) | 2014-01-29 | 2015-08-06 | Advanced Technology Materials, Inc. | Post chemical mechanical polishing formulations and method of use |
| WO2015119925A1 (en) | 2014-02-05 | 2015-08-13 | Advanced Technology Materials, Inc. | Non-amine post-cmp compositions and method of use |
| US9214334B2 (en) | 2014-02-18 | 2015-12-15 | Lam Research Corporation | High growth rate process for conformal aluminum nitride |
| US9478411B2 (en) | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS |
| US9478438B2 (en) | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor |
| US9564312B2 (en) | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
| US10566187B2 (en) | 2015-03-20 | 2020-02-18 | Lam Research Corporation | Ultrathin atomic layer deposition film accuracy thickness control |
| US9502238B2 (en) | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
| US10526701B2 (en) | 2015-07-09 | 2020-01-07 | Lam Research Corporation | Multi-cycle ALD process for film uniformity and thickness profile modulation |
| KR102412614B1 (ko) | 2015-10-22 | 2022-06-23 | 삼성전자주식회사 | 물질막, 이를 포함하는 반도체 소자, 및 이들의 제조 방법 |
| US9773643B1 (en) | 2016-06-30 | 2017-09-26 | Lam Research Corporation | Apparatus and method for deposition and etch in gap fill |
| US10062563B2 (en) | 2016-07-01 | 2018-08-28 | Lam Research Corporation | Selective atomic layer deposition with post-dose treatment |
| US10037884B2 (en) | 2016-08-31 | 2018-07-31 | Lam Research Corporation | Selective atomic layer deposition for gapfill using sacrificial underlayer |
| US10937783B2 (en) | 2016-11-29 | 2021-03-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10269559B2 (en) | 2017-09-13 | 2019-04-23 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
| US10784243B2 (en) * | 2018-06-04 | 2020-09-22 | Globalfoundries Inc. | Uniplanar (single layer) passive circuitry |
| US10847201B2 (en) | 2019-02-27 | 2020-11-24 | Kepler Computing Inc. | High-density low voltage non-volatile differential memory bit-cell with shared plate line |
| US11476261B2 (en) | 2019-02-27 | 2022-10-18 | Kepler Computing Inc. | High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor |
| US11227872B2 (en) * | 2019-04-25 | 2022-01-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | FeRAM MFM structure with selective electrode etch |
| SG11202111962QA (en) | 2019-05-01 | 2021-11-29 | Lam Res Corp | Modulated atomic layer deposition |
| CN114245832B (zh) | 2019-06-07 | 2025-10-28 | 朗姆研究公司 | 原子层沉积期间的膜特性的原位控制 |
| US11289497B2 (en) | 2019-12-27 | 2022-03-29 | Kepler Computing Inc. | Integration method of ferroelectric memory array |
| US11482528B2 (en) | 2019-12-27 | 2022-10-25 | Kepler Computing Inc. | Pillar capacitor and method of fabricating such |
| US11430861B2 (en) | 2019-12-27 | 2022-08-30 | Kepler Computing Inc. | Ferroelectric capacitor and method of patterning such |
| TWI744784B (zh) * | 2020-02-03 | 2021-11-01 | 財團法人工業技術研究院 | 鐵電記憶體及其製造方法 |
| CN111968981B (zh) * | 2020-08-26 | 2021-12-24 | 无锡拍字节科技有限公司 | 一种fcob存储器件的制造方法及其电容器 |
| US11545506B2 (en) | 2020-11-13 | 2023-01-03 | Sandisk Technologies Llc | Ferroelectric field effect transistors having enhanced memory window and methods of making the same |
| US11996462B2 (en) | 2020-11-13 | 2024-05-28 | Sandisk Technologies Llc | Ferroelectric field effect transistors having enhanced memory window and methods of making the same |
| WO2022103436A1 (en) * | 2020-11-13 | 2022-05-19 | Sandisk Technologies Llc | Ferroelectric field effect transistors having enhanced memory window and methods of making the same |
| US11716858B1 (en) | 2021-05-07 | 2023-08-01 | Kepler Computing Inc. | Ferroelectric device film stacks with texturing layer which is part of a bottom electrode and a barrier, and method of forming such |
| US11527277B1 (en) | 2021-06-04 | 2022-12-13 | Kepler Computing Inc. | High-density low voltage ferroelectric memory bit-cell |
| US11916099B2 (en) | 2021-06-08 | 2024-02-27 | International Business Machines Corporation | Multilayer dielectric for metal-insulator-metal capacitor |
| US11765909B1 (en) | 2021-06-11 | 2023-09-19 | Kepler Computing Inc. | Process integration flow for embedded memory enabled by decoupling processing of a memory area from a non-memory area |
| KR20230114480A (ko) * | 2022-01-25 | 2023-08-01 | 삼성전자주식회사 | 슬러리 조성물 및 이를 이용하는 집적회로 소자의 제조 방법 |
| US12108609B1 (en) | 2022-03-07 | 2024-10-01 | Kepler Computing Inc. | Memory bit-cell with stacked and folded planar capacitors |
| US20230395134A1 (en) | 2022-06-03 | 2023-12-07 | Kepler Computing Inc. | Write disturb mitigation for non-linear polar material based multi-capacitor bit-cell |
| JP2024017007A (ja) | 2022-07-27 | 2024-02-08 | キオクシア株式会社 | 記憶装置及び導電層 |
| US12300297B1 (en) | 2022-08-05 | 2025-05-13 | Kepler Computing Inc. | Memory array with buried or backside word-line |
| US12062584B1 (en) | 2022-10-28 | 2024-08-13 | Kepler Computing Inc. | Iterative method of multilayer stack development for device applications |
| US11741428B1 (en) | 2022-12-23 | 2023-08-29 | Kepler Computing Inc. | Iterative monetization of process development of non-linear polar material and devices |
| US12347476B1 (en) | 2022-12-27 | 2025-07-01 | Kepler Computing Inc. | Apparatus and method to improve sensing noise margin in a non-linear polar material based bit-cell |
| US12334127B2 (en) | 2023-01-30 | 2025-06-17 | Kepler Computing Inc. | Non-linear polar material based multi-capacitor high density bit-cell |
| CN116018060B (zh) * | 2023-03-27 | 2023-06-13 | 长鑫存储技术有限公司 | 半导体结构及其制备方法、封装结构 |
| CN116120839B (zh) * | 2023-04-04 | 2023-08-29 | 中国科学技术大学 | 用于钙钛矿半导体材料的磁流变液及磁流变抛光方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5367956A (en) * | 1992-02-07 | 1994-11-29 | Fogle, Jr.; Homer W. | Hermetically-sealed electrically-absorptive low-pass radio frequency filters and electro-magnetically lossy ceramic materials for said filters |
| US5472935A (en) | 1992-12-01 | 1995-12-05 | Yandrofski; Robert M. | Tuneable microwave devices incorporating high temperature superconducting and ferroelectric films |
| US5363550A (en) | 1992-12-23 | 1994-11-15 | International Business Machines Corporation | Method of Fabricating a micro-coaxial wiring structure |
| US5318927A (en) * | 1993-04-29 | 1994-06-07 | Micron Semiconductor, Inc. | Methods of chemical-mechanical polishing insulating inorganic metal oxide materials |
| US5340370A (en) * | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
| JPH08139293A (ja) * | 1994-09-17 | 1996-05-31 | Toshiba Corp | 半導体基板 |
| KR0184064B1 (ko) * | 1995-12-22 | 1999-03-20 | 문정환 | 반도체 소자의 캐패시터 제조방법 |
| KR100227070B1 (ko) * | 1996-11-04 | 1999-10-15 | 구본준 | 커패시터 및 그의 제조방법 |
| EP0843359A3 (en) | 1996-11-14 | 2000-01-26 | Texas Instruments Inc. | Method for chemical mechanical polishing a semiconductor device using slurry |
| US5976928A (en) | 1997-11-20 | 1999-11-02 | Advanced Technology Materials, Inc. | Chemical mechanical polishing of FeRAM capacitors |
-
1998
- 1998-11-25 US US09/200,499 patent/US6346741B1/en not_active Expired - Lifetime
-
1999
- 1999-11-23 EP EP99962839A patent/EP1133792A4/en not_active Withdrawn
- 1999-11-23 JP JP2000584527A patent/JP5128731B2/ja not_active Expired - Lifetime
- 1999-11-23 WO PCT/US1999/027754 patent/WO2000031794A1/en not_active Ceased
- 1999-11-23 KR KR1020017006595A patent/KR20010089510A/ko not_active Withdrawn
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5128731B2 (ja) | Ｆｅｒａｍコンデンサの化学的機械研磨 | |
| JP2002530890A5 (enExample) | ||
| KR100643061B1 (ko) | 강유전체 랜덤 액세스 메모리 캐패시터의 화학 및 기계적 폴리싱 방법 | |
| KR100746883B1 (ko) | 반도체 장치의 제조 방법 | |
| US6656748B2 (en) | FeRAM capacitor post stack etch clean/repair | |
| JP2003318371A (ja) | 強誘電体メモリセルに関連するキャパシタスタックのエッチング方法 | |
| US5959327A (en) | Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same | |
| US6773930B2 (en) | Method of forming an FeRAM capacitor having a bottom electrode diffusion barrier | |
| US20020017063A1 (en) | Polishing liquid and process for patterning metals and metal oxides | |
| JP2003110095A (ja) | 集積回路およびその形成方法 | |
| TW544811B (en) | Process of manufacturing semiconductor device and slurry used therefor | |
| JP2001230382A (ja) | 強誘電性コンデンサを形成するための水素を含まない接触エッチング | |
| KR100532427B1 (ko) | 강유전체 메모리 소자의 제조 방법 | |
| US8124526B2 (en) | Methods of forming a thin ferroelectric layer and methods of manufacturing a semiconductor device including the same | |
| US20020042208A1 (en) | Polishing liquid and method for structuring metal oxides | |
| US20220277964A1 (en) | Chemical mechanical planarization slurries and processes for platinum group metals | |
| JP2003533021A (ja) | キャパシタ構造の製造方法 | |
| US7129173B2 (en) | Process for producing and removing a mask layer | |
| TW200411839A (en) | Method for forming capacitor of ferroelectric random access memory | |
| JP2000228373A (ja) | 電極の製造方法 | |
| US20020016012A1 (en) | Precise local creation of openings in a layer | |
| Russell et al. | Damascene processing of ferroelectric capacitors | |
| KR100546121B1 (ko) | 반도체 소자의 캐패시터 형성 방법 | |
| KR20090042462A (ko) | 반도체소자의 층간절연막 평탄화방법 | |
| KR20050056536A (ko) | 반도체 소자의 캐패시터 형성 방법 |