KR20010089510A - 강유전체 램 커패시터의 화학적 기계 연마법 - Google Patents

강유전체 램 커패시터의 화학적 기계 연마법 Download PDF

Info

Publication number
KR20010089510A
KR20010089510A KR1020017006595A KR20017006595A KR20010089510A KR 20010089510 A KR20010089510 A KR 20010089510A KR 1020017006595 A KR1020017006595 A KR 1020017006595A KR 20017006595 A KR20017006595 A KR 20017006595A KR 20010089510 A KR20010089510 A KR 20010089510A
Authority
KR
South Korea
Prior art keywords
cmp
layer
device structure
capacitor
microelectronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020017006595A
Other languages
English (en)
Korean (ko)
Inventor
반버스커크피터씨
러셀마이클더블유
빌로듀스티븐엠
바움토마스에이취
Original Assignee
바누치 유진 지.
어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 바누치 유진 지., 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 filed Critical 바누치 유진 지.
Publication of KR20010089510A publication Critical patent/KR20010089510A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10P52/403—
    • H10P95/062—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020017006595A 1998-11-25 1999-11-23 강유전체 램 커패시터의 화학적 기계 연마법 Withdrawn KR20010089510A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/200,499 US6346741B1 (en) 1997-11-20 1998-11-25 Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
US09/200,499 1998-11-25
PCT/US1999/027754 WO2000031794A1 (en) 1998-11-25 1999-11-23 Chemical mechanical polishing of feram capacitors

Publications (1)

Publication Number Publication Date
KR20010089510A true KR20010089510A (ko) 2001-10-06

Family

ID=22741982

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017006595A Withdrawn KR20010089510A (ko) 1998-11-25 1999-11-23 강유전체 램 커패시터의 화학적 기계 연마법

Country Status (5)

Country Link
US (1) US6346741B1 (enExample)
EP (1) EP1133792A4 (enExample)
JP (1) JP5128731B2 (enExample)
KR (1) KR20010089510A (enExample)
WO (1) WO2000031794A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7842990B2 (en) 2006-02-17 2010-11-30 Hynix Semiconductor Inc. Nonvolatile ferroelectric memory device including trench capacitor
US8124526B2 (en) 2008-07-17 2012-02-28 Samsung Electronics Co., Ltd. Methods of forming a thin ferroelectric layer and methods of manufacturing a semiconductor device including the same
KR101300241B1 (ko) * 2011-08-31 2013-08-26 서울대학교산학협력단 강유전체 메모리 소자 및 그의 제조 방법
WO2022103436A1 (en) * 2020-11-13 2022-05-19 Sandisk Technologies Llc Ferroelectric field effect transistors having enhanced memory window and methods of making the same
US11545506B2 (en) 2020-11-13 2023-01-03 Sandisk Technologies Llc Ferroelectric field effect transistors having enhanced memory window and methods of making the same
US11996462B2 (en) 2020-11-13 2024-05-28 Sandisk Technologies Llc Ferroelectric field effect transistors having enhanced memory window and methods of making the same

Families Citing this family (112)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7012292B1 (en) * 1998-11-25 2006-03-14 Advanced Technology Materials, Inc Oxidative top electrode deposition process, and microelectronic device structure
JP2004514266A (ja) * 1999-12-14 2004-05-13 ロデール　ホールディングス　インコーポレイテッド 貴金属用研磨組成物
US6743395B2 (en) * 2000-03-22 2004-06-01 Ebara Corporation Composite metallic ultrafine particles and process for producing the same
DE10022655C2 (de) * 2000-04-28 2002-03-07 Infineon Technologies Ag Verfahren zur Herstellung von Kondensatorstrukturen
DE10022656B4 (de) * 2000-04-28 2006-07-06 Infineon Technologies Ag Verfahren zum Entfernen von Strukturen
KR100762863B1 (ko) * 2000-06-30 2007-10-08 주식회사 하이닉스반도체 확산방지 티타늄-실리콘-질소 막을 이용한 구리금속배선방법
US6524912B1 (en) 2000-08-31 2003-02-25 Micron Technology, Inc. Planarization of metal container structures
JP2002110932A (ja) * 2000-09-28 2002-04-12 Toshiba Corp 半導体装置及びその製造方法
US6642552B2 (en) * 2001-02-02 2003-11-04 Grail Semiconductor Inductive storage capacitor
US6653154B2 (en) * 2001-03-15 2003-11-25 Micron Technology, Inc. Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure
US7084080B2 (en) * 2001-03-30 2006-08-01 Advanced Technology Materials, Inc. Silicon source reagent compositions, and method of making and using same for microelectronic device structure
CN100403450C (zh) * 2001-05-07 2008-07-16 先进微装置公司 具有自组装聚合物薄膜的内存装置及其制造方法
US7372160B2 (en) * 2001-05-31 2008-05-13 Stmicroelectronics, Inc. Barrier film deposition over metal for reduction in metal dishing after CMP
US6790780B2 (en) * 2001-09-27 2004-09-14 Intel Corporation Fabrication of 3-D capacitor with dual damascene process
KR100428789B1 (ko) * 2001-12-05 2004-04-28 삼성전자주식회사 금속/절연막/금속 캐퍼시터 구조를 가지는 반도체 장치 및그 형성 방법
US6884723B2 (en) 2001-12-21 2005-04-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using complexing agents
US20030119316A1 (en) * 2001-12-21 2003-06-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using oxidizing agents
US7049237B2 (en) 2001-12-21 2006-05-23 Micron Technology, Inc. Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases
US7121926B2 (en) 2001-12-21 2006-10-17 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article
US6730592B2 (en) * 2001-12-21 2004-05-04 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
US7524346B2 (en) 2002-01-25 2009-04-28 Dupont Air Products Nanomaterials Llc Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates
JP2003273325A (ja) 2002-03-15 2003-09-26 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
JP3931113B2 (ja) * 2002-06-10 2007-06-13 松下電器産業株式会社 半導体装置及びその製造方法
KR100500940B1 (ko) * 2002-06-21 2005-07-14 주식회사 하이닉스반도체 반도체 장치의 캐패시터 제조방법
JP4445191B2 (ja) * 2002-10-07 2010-04-07 株式会社東芝 半導体装置およびその製造方法
JP2004152864A (ja) * 2002-10-29 2004-05-27 Renesas Technology Corp 半導体装置
US7279423B2 (en) * 2002-10-31 2007-10-09 Intel Corporation Forming a copper diffusion barrier
US7268383B2 (en) * 2003-02-20 2007-09-11 Infineon Technologies Ag Capacitor and method of manufacturing a capacitor
US6812110B1 (en) * 2003-05-09 2004-11-02 Micron Technology, Inc. Methods of forming capacitor constructions, and methods of forming constructions comprising dielectric materials
JP2005101213A (ja) * 2003-09-24 2005-04-14 Toshiba Corp 半導体装置の製造方法
US7105400B2 (en) * 2003-09-30 2006-09-12 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor device
US7002196B2 (en) * 2003-11-13 2006-02-21 Infineon Technologies Ag Ferroelectric capacitor devices and FeRAM devices
JP4785030B2 (ja) 2005-01-18 2011-10-05 富士通セミコンダクター株式会社 半導体装置とその製造方法
US9312557B2 (en) * 2005-05-11 2016-04-12 Schlumberger Technology Corporation Fuel cell apparatus and method for downhole power systems
KR100785458B1 (ko) * 2005-05-18 2007-12-13 삼성전자주식회사 강유전체 박막의 제조 방법 및 이를 이용한 반도체 장치의제조 방법
US20090215269A1 (en) * 2005-06-06 2009-08-27 Advanced Technology Materials Inc. Integrated chemical mechanical polishing composition and process for single platen processing
CN101356628B (zh) * 2005-08-05 2012-01-04 高级技术材料公司 用于对金属膜进行平坦化的高通量化学机械抛光组合物
KR100709012B1 (ko) * 2005-08-10 2007-04-18 동부일렉트로닉스 주식회사 캐패시터 및 그 제조 방법
TWI385226B (zh) 2005-09-08 2013-02-11 羅門哈斯電子材料Ｃｍｐ控股公司 用於移除聚合物阻障之研磨漿液
FR2897467B1 (fr) * 2006-02-15 2009-04-03 St Microelectronics Crolles 2 Condensateur mim
US20070212797A1 (en) * 2006-03-08 2007-09-13 Suk-Hun Choi Method of forming a ferroelectric device
US7538969B2 (en) * 2006-08-23 2009-05-26 Imation Corp. Servo pattern with encoded data
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
TWI562234B (en) * 2006-12-21 2016-12-11 Entegris Inc Compositions and methods for the selective removal of silicon nitride
US7750173B2 (en) 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
US8304909B2 (en) * 2007-12-19 2012-11-06 Intel Corporation IC solder reflow method and materials
JP2010135453A (ja) * 2008-12-03 2010-06-17 Renesas Electronics Corp 半導体装置、半導体装置の製造方法
US8441097B2 (en) * 2009-12-23 2013-05-14 Intel Corporation Methods to form memory devices having a capacitor with a recessed electrode
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9373500B2 (en) * 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
TWI536451B (zh) * 2010-04-26 2016-06-01 應用材料股份有限公司 使用具金屬系前驅物之化學氣相沉積與原子層沉積製程之ｎ型金氧半導體金屬閘極材料、製造方法及設備
JP6101421B2 (ja) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
KR102207992B1 (ko) 2012-10-23 2021-01-26 램 리써치 코포레이션 서브-포화된 원자층 증착 및 등각막 증착
JP6538300B2 (ja) 2012-11-08 2019-07-03 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 感受性基材上にフィルムを蒸着するための方法
WO2014089196A1 (en) 2012-12-05 2014-06-12 Advanced Technology Materials, Inc. Compositions for cleaning iii-v semiconductor materials and methods of using same
SG11201507014RA (en) 2013-03-04 2015-10-29 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
TWI651396B (zh) 2013-06-06 2019-02-21 美商恩特葛瑞斯股份有限公司 選擇性蝕刻氮化鈦之組成物及方法
EP3027709A4 (en) 2013-07-31 2017-03-29 Entegris, Inc. AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY
SG10201801575YA (en) 2013-08-30 2018-03-28 Entegris Inc Compositions and methods for selectively etching titanium nitride
US9159696B2 (en) 2013-09-13 2015-10-13 GlobalFoundries, Inc. Plug via formation by patterned plating and polishing
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
KR102352475B1 (ko) 2013-12-20 2022-01-18 엔테그리스, 아이엔씨. 이온-주입된 레지스트의 제거를 위한 비-산화성 강산의 용도
WO2015103146A1 (en) 2013-12-31 2015-07-09 Advanced Technology Materials, Inc. Formulations to selectively etch silicon and germanium
WO2015116818A1 (en) 2014-01-29 2015-08-06 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
US9214334B2 (en) 2014-02-18 2015-12-15 Lam Research Corporation High growth rate process for conformal aluminum nitride
US9478411B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
US9478438B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US10526701B2 (en) 2015-07-09 2020-01-07 Lam Research Corporation Multi-cycle ALD process for film uniformity and thickness profile modulation
KR102412614B1 (ko) 2015-10-22 2022-06-23 삼성전자주식회사 물질막, 이를 포함하는 반도체 소자, 및 이들의 제조 방법
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10937783B2 (en) 2016-11-29 2021-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US10784243B2 (en) * 2018-06-04 2020-09-22 Globalfoundries Inc. Uniplanar (single layer) passive circuitry
US10847201B2 (en) 2019-02-27 2020-11-24 Kepler Computing Inc. High-density low voltage non-volatile differential memory bit-cell with shared plate line
US11476261B2 (en) 2019-02-27 2022-10-18 Kepler Computing Inc. High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor
US11227872B2 (en) * 2019-04-25 2022-01-18 Taiwan Semiconductor Manufacturing Company, Ltd. FeRAM MFM structure with selective electrode etch
SG11202111962QA (en) 2019-05-01 2021-11-29 Lam Res Corp Modulated atomic layer deposition
CN114245832B (zh) 2019-06-07 2025-10-28 朗姆研究公司 原子层沉积期间的膜特性的原位控制
US11289497B2 (en) 2019-12-27 2022-03-29 Kepler Computing Inc. Integration method of ferroelectric memory array
US11482528B2 (en) 2019-12-27 2022-10-25 Kepler Computing Inc. Pillar capacitor and method of fabricating such
US11430861B2 (en) 2019-12-27 2022-08-30 Kepler Computing Inc. Ferroelectric capacitor and method of patterning such
TWI744784B (zh) * 2020-02-03 2021-11-01 財團法人工業技術研究院 鐵電記憶體及其製造方法
CN111968981B (zh) * 2020-08-26 2021-12-24 无锡拍字节科技有限公司 一种fcob存储器件的制造方法及其电容器
US11716858B1 (en) 2021-05-07 2023-08-01 Kepler Computing Inc. Ferroelectric device film stacks with texturing layer which is part of a bottom electrode and a barrier, and method of forming such
US11527277B1 (en) 2021-06-04 2022-12-13 Kepler Computing Inc. High-density low voltage ferroelectric memory bit-cell
US11916099B2 (en) 2021-06-08 2024-02-27 International Business Machines Corporation Multilayer dielectric for metal-insulator-metal capacitor
US11765909B1 (en) 2021-06-11 2023-09-19 Kepler Computing Inc. Process integration flow for embedded memory enabled by decoupling processing of a memory area from a non-memory area
KR20230114480A (ko) * 2022-01-25 2023-08-01 삼성전자주식회사 슬러리 조성물 및 이를 이용하는 집적회로 소자의 제조 방법
US12108609B1 (en) 2022-03-07 2024-10-01 Kepler Computing Inc. Memory bit-cell with stacked and folded planar capacitors
US20230395134A1 (en) 2022-06-03 2023-12-07 Kepler Computing Inc. Write disturb mitigation for non-linear polar material based multi-capacitor bit-cell
JP2024017007A (ja) 2022-07-27 2024-02-08 キオクシア株式会社 記憶装置及び導電層
US12300297B1 (en) 2022-08-05 2025-05-13 Kepler Computing Inc. Memory array with buried or backside word-line
US12062584B1 (en) 2022-10-28 2024-08-13 Kepler Computing Inc. Iterative method of multilayer stack development for device applications
US11741428B1 (en) 2022-12-23 2023-08-29 Kepler Computing Inc. Iterative monetization of process development of non-linear polar material and devices
US12347476B1 (en) 2022-12-27 2025-07-01 Kepler Computing Inc. Apparatus and method to improve sensing noise margin in a non-linear polar material based bit-cell
US12334127B2 (en) 2023-01-30 2025-06-17 Kepler Computing Inc. Non-linear polar material based multi-capacitor high density bit-cell
CN116018060B (zh) * 2023-03-27 2023-06-13 长鑫存储技术有限公司 半导体结构及其制备方法、封装结构
CN116120839B (zh) * 2023-04-04 2023-08-29 中国科学技术大学 用于钙钛矿半导体材料的磁流变液及磁流变抛光方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367956A (en) * 1992-02-07 1994-11-29 Fogle, Jr.; Homer W. Hermetically-sealed electrically-absorptive low-pass radio frequency filters and electro-magnetically lossy ceramic materials for said filters
US5472935A (en) 1992-12-01 1995-12-05 Yandrofski; Robert M. Tuneable microwave devices incorporating high temperature superconducting and ferroelectric films
US5363550A (en) 1992-12-23 1994-11-15 International Business Machines Corporation Method of Fabricating a micro-coaxial wiring structure
US5318927A (en) * 1993-04-29 1994-06-07 Micron Semiconductor, Inc. Methods of chemical-mechanical polishing insulating inorganic metal oxide materials
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
JPH08139293A (ja) * 1994-09-17 1996-05-31 Toshiba Corp 半導体基板
KR0184064B1 (ko) * 1995-12-22 1999-03-20 문정환 반도체 소자의 캐패시터 제조방법
KR100227070B1 (ko) * 1996-11-04 1999-10-15 구본준 커패시터 및 그의 제조방법
EP0843359A3 (en) 1996-11-14 2000-01-26 Texas Instruments Inc. Method for chemical mechanical polishing a semiconductor device using slurry
US5976928A (en) 1997-11-20 1999-11-02 Advanced Technology Materials, Inc. Chemical mechanical polishing of FeRAM capacitors

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7842990B2 (en) 2006-02-17 2010-11-30 Hynix Semiconductor Inc. Nonvolatile ferroelectric memory device including trench capacitor
US8124526B2 (en) 2008-07-17 2012-02-28 Samsung Electronics Co., Ltd. Methods of forming a thin ferroelectric layer and methods of manufacturing a semiconductor device including the same
KR101300241B1 (ko) * 2011-08-31 2013-08-26 서울대학교산학협력단 강유전체 메모리 소자 및 그의 제조 방법
US9105345B2 (en) 2011-08-31 2015-08-11 Seoul National University R&Db Foundation Ferroelectric memory device and method for manufacturing same
WO2022103436A1 (en) * 2020-11-13 2022-05-19 Sandisk Technologies Llc Ferroelectric field effect transistors having enhanced memory window and methods of making the same
US11545506B2 (en) 2020-11-13 2023-01-03 Sandisk Technologies Llc Ferroelectric field effect transistors having enhanced memory window and methods of making the same
US11996462B2 (en) 2020-11-13 2024-05-28 Sandisk Technologies Llc Ferroelectric field effect transistors having enhanced memory window and methods of making the same

Also Published As

Publication number Publication date
WO2000031794A1 (en) 2000-06-02
JP5128731B2 (ja) 2013-01-23
JP2002530890A (ja) 2002-09-17
US6346741B1 (en) 2002-02-12
EP1133792A1 (en) 2001-09-19
EP1133792A4 (en) 2006-12-06

Similar Documents

Publication Publication Date Title
KR20010089510A (ko) 강유전체 램 커패시터의 화학적 기계 연마법
JP2002530890A5 (enExample)
US5976928A (en) Chemical mechanical polishing of FeRAM capacitors
US6734477B2 (en) Fabricating an embedded ferroelectric memory cell
US20020017063A1 (en) Polishing liquid and process for patterning metals and metal oxides
JP2003318371A (ja) 強誘電体メモリセルに関連するキャパシタスタックのエッチング方法
US6017803A (en) Method to prevent dishing in chemical mechanical polishing
US7052995B2 (en) Process of manufacturing semiconductor device including chemical-mechanical polishing
JP2001230382A (ja) 強誘電性コンデンサを形成するための水素を含まない接触エッチング
KR100532427B1 (ko) 강유전체 메모리 소자의 제조 방법
US6716732B2 (en) Method for fabricating a contact pad of semiconductor device
KR20180135279A (ko) 금속막 연마용 슬러리 조성물 및 이를 이용하는 반도체 장치의 제조 방법
US8124526B2 (en) Methods of forming a thin ferroelectric layer and methods of manufacturing a semiconductor device including the same
US20020042208A1 (en) Polishing liquid and method for structuring metal oxides
US6864177B2 (en) Method for manufacturing metal line contact plug of semiconductor device
US20220277964A1 (en) Chemical mechanical planarization slurries and processes for platinum group metals
TWI226359B (en) Method to chemical-mechanically polish layers made of platin group metals
US20030139006A1 (en) Method for producing capacitor structures
US20060261041A1 (en) Method for manufacturing metal line contact plug of semiconductor device
US7129173B2 (en) Process for producing and removing a mask layer
Paik et al. Nanoparticle engineering for chemical-mechanical planarization: Fabrication of next-generation nanodevices
EP1372187A1 (en) Method for manufacturing semiconductor device
KR100278487B1 (ko) 반도체 장치의 제조 방법
Russell et al. Damascene processing of ferroelectric capacitors
JP2003234345A (ja) 有機金属気相成長法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000