FR2897467B1 - Condensateur mim - Google Patents
Condensateur mimInfo
- Publication number
- FR2897467B1 FR2897467B1 FR0650540A FR0650540A FR2897467B1 FR 2897467 B1 FR2897467 B1 FR 2897467B1 FR 0650540 A FR0650540 A FR 0650540A FR 0650540 A FR0650540 A FR 0650540A FR 2897467 B1 FR2897467 B1 FR 2897467B1
- Authority
- FR
- France
- Prior art keywords
- mim capacitor
- mim
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/085—Vapour deposited
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0650540A FR2897467B1 (fr) | 2006-02-15 | 2006-02-15 | Condensateur mim |
US11/706,059 US7630191B2 (en) | 2006-02-15 | 2007-02-13 | MIM capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0650540A FR2897467B1 (fr) | 2006-02-15 | 2006-02-15 | Condensateur mim |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2897467A1 FR2897467A1 (fr) | 2007-08-17 |
FR2897467B1 true FR2897467B1 (fr) | 2009-04-03 |
Family
ID=37103254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0650540A Expired - Fee Related FR2897467B1 (fr) | 2006-02-15 | 2006-02-15 | Condensateur mim |
Country Status (2)
Country | Link |
---|---|
US (1) | US7630191B2 (fr) |
FR (1) | FR2897467B1 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7611958B2 (en) * | 2007-12-05 | 2009-11-03 | Infineon Technologies Ag | Method of making a semiconductor element |
US20100123993A1 (en) * | 2008-02-13 | 2010-05-20 | Herzel Laor | Atomic layer deposition process for manufacture of battery electrodes, capacitors, resistors, and catalyzers |
WO2010088684A2 (fr) * | 2009-02-02 | 2010-08-05 | Space Charge, LLC | Condensateur utilisant des extensions à base de carbone |
EP2396817A4 (fr) * | 2009-02-12 | 2014-08-20 | Laor Consulting Llc | Condensateur électrique fritté et à nanopores, condensateur électrochimique et batterie et leur procédé de fabrication |
US8236645B1 (en) * | 2011-02-07 | 2012-08-07 | GlobalFoundries, Inc. | Integrated circuits having place-efficient capacitors and methods for fabricating the same |
WO2015118901A1 (fr) * | 2014-02-07 | 2015-08-13 | 株式会社村田製作所 | Condensateur |
JP7063019B2 (ja) * | 2018-03-09 | 2022-05-09 | Tdk株式会社 | 薄膜コンデンサの製造方法及び薄膜コンデンサ |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2262186A (en) * | 1991-12-04 | 1993-06-09 | Philips Electronic Associated | A capacitive structure for a semiconductor device |
US5976928A (en) * | 1997-11-20 | 1999-11-02 | Advanced Technology Materials, Inc. | Chemical mechanical polishing of FeRAM capacitors |
US6346741B1 (en) * | 1997-11-20 | 2002-02-12 | Advanced Technology Materials, Inc. | Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same |
US6187624B1 (en) * | 1999-06-04 | 2001-02-13 | Taiwan Semiconductor Manufacturing Company | Method for making closely spaced capacitors with reduced parasitic capacitance on a dynamic random access memory (DRAM) device |
KR100331554B1 (ko) * | 1999-09-27 | 2002-04-06 | 윤종용 | 인접된 커패시터 사이의 크로스토크가 억제된 반도체 소자의 커패시터 어레이 및 그 제조방법 |
US6548348B1 (en) * | 2001-06-18 | 2003-04-15 | Taiwan Semiconductor Manufacturing Company | Method of forming a storage node contact hole in a porous insulator layer |
US6825130B2 (en) * | 2002-12-12 | 2004-11-30 | Asm Japan K.K. | CVD of porous dielectric materials |
-
2006
- 2006-02-15 FR FR0650540A patent/FR2897467B1/fr not_active Expired - Fee Related
-
2007
- 2007-02-13 US US11/706,059 patent/US7630191B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20070200197A1 (en) | 2007-08-30 |
FR2897467A1 (fr) | 2007-08-17 |
US7630191B2 (en) | 2009-12-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20121031 |