JP2002202584A5 - - Google Patents
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- Publication number
- JP2002202584A5 JP2002202584A5 JP2000401154A JP2000401154A JP2002202584A5 JP 2002202584 A5 JP2002202584 A5 JP 2002202584A5 JP 2000401154 A JP2000401154 A JP 2000401154A JP 2000401154 A JP2000401154 A JP 2000401154A JP 2002202584 A5 JP2002202584 A5 JP 2002202584A5
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- pattern
- light
- forming
- binder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011230 binding agent Substances 0.000 claims 20
- 238000004519 manufacturing process Methods 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 14
- 238000000034 method Methods 0.000 claims 12
- 239000000126 substance Substances 0.000 claims 11
- 239000011236 particulate material Substances 0.000 claims 9
- 239000013618 particulate matter Substances 0.000 claims 9
- 239000011521 glass Substances 0.000 claims 8
- 239000010419 fine particle Substances 0.000 claims 7
- 239000000203 mixture Substances 0.000 claims 4
- 238000002834 transmittance Methods 0.000 claims 4
- 230000005540 biological transmission Effects 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 239000006096 absorbing agent Substances 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 239000012528 membrane Substances 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- 239000006089 photosensitive glass Substances 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 230000002265 prevention Effects 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000401154A JP3914386B2 (ja) | 2000-12-28 | 2000-12-28 | フォトマスク、その製造方法、パターン形成方法および半導体装置の製造方法 |
| TW090127169A TW516112B (en) | 2000-12-28 | 2001-11-01 | Photomask and its manufacturing method, forming method of pattern, and manufacturing method of semiconductor device |
| KR1020010076106A KR100798969B1 (ko) | 2000-12-28 | 2001-12-04 | 포토마스크, 그 제조방법, 패턴형성방법 및 반도체장치의제조방법 |
| US10/026,973 US6927002B2 (en) | 2000-12-28 | 2001-12-27 | Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method |
| CNB011440740A CN1193405C (zh) | 2000-12-28 | 2001-12-28 | 光掩模、其制造方法、图形形成方法及半导体装置的制造方法 |
| US10/072,880 US6703171B2 (en) | 2000-12-28 | 2002-02-12 | Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000401154A JP3914386B2 (ja) | 2000-12-28 | 2000-12-28 | フォトマスク、その製造方法、パターン形成方法および半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002202584A JP2002202584A (ja) | 2002-07-19 |
| JP2002202584A5 true JP2002202584A5 (enExample) | 2005-06-16 |
| JP3914386B2 JP3914386B2 (ja) | 2007-05-16 |
Family
ID=18865631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000401154A Expired - Fee Related JP3914386B2 (ja) | 2000-12-28 | 2000-12-28 | フォトマスク、その製造方法、パターン形成方法および半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6927002B2 (enExample) |
| JP (1) | JP3914386B2 (enExample) |
| KR (1) | KR100798969B1 (enExample) |
| CN (1) | CN1193405C (enExample) |
| TW (1) | TW516112B (enExample) |
Families Citing this family (66)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003101360A (ja) * | 2001-09-19 | 2003-04-04 | Murata Mfg Co Ltd | 弾性表面波素子の電極パターン形成方法 |
| US6667385B2 (en) * | 2002-01-28 | 2003-12-23 | Energenetics International, Inc. | Method of producing aminium lactate salt as a feedstock for dilactic acid or dimer production |
| JP3754378B2 (ja) * | 2002-02-14 | 2006-03-08 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| DE10208785B4 (de) * | 2002-02-28 | 2008-01-31 | Qimonda Ag | Lithografieverfahren zur Fotomaskenherstellung mittels Elektronenstrahllithografie |
| KR100861196B1 (ko) * | 2002-07-18 | 2008-09-30 | 주식회사 하이닉스반도체 | 반도체 소자의 패턴 형성 방법 |
| JP3771206B2 (ja) * | 2002-09-25 | 2006-04-26 | 松下電器産業株式会社 | 水溶性材料及びパターン形成方法 |
| US7087356B2 (en) * | 2002-09-30 | 2006-08-08 | International Business Machines Corporation | 193nm resist with improved post-exposure properties |
| JP2006504136A (ja) * | 2002-10-21 | 2006-02-02 | ナノインク インコーポレーティッド | ナノメートル・スケール設計構造、その製造方法および装置、マスク修復、強化、および製造への適用 |
| AU2003287660A1 (en) * | 2002-11-15 | 2004-06-15 | E.I. Du Pont De Nemours And Company | Process for using protective layers in the fabrication of electronic devices |
| US20040170925A1 (en) * | 2002-12-06 | 2004-09-02 | Roach David Herbert | Positive imageable thick film compositions |
| US7510818B2 (en) * | 2002-12-09 | 2009-03-31 | Pixelligent Technologies Llc | Reversible photobleachable materials based on nano-sized semiconductor particles and their optical applications |
| DE10260819A1 (de) * | 2002-12-23 | 2004-07-01 | Carl Zeiss Smt Ag | Verfahren zur Herstellung von mikrostrukturierten optischen Elementen |
| US7524616B2 (en) * | 2003-03-04 | 2009-04-28 | Pixelligent Technologies Llc | Applications of semiconductor nano-sized particles for photolithography |
| US8993221B2 (en) | 2012-02-10 | 2015-03-31 | Pixelligent Technologies, Llc | Block co-polymer photoresist |
| US6858372B2 (en) * | 2003-03-24 | 2005-02-22 | The United States Of America As Represented By The Secretary Of The Navy | Resist composition with enhanced X-ray and electron sensitivity |
| JP3993545B2 (ja) * | 2003-09-04 | 2007-10-17 | 株式会社東芝 | パターンの作製方法、半導体装置の製造方法、パターンの作製システム、セルライブラリ、フォトマスクの製造方法 |
| JP4794444B2 (ja) | 2003-09-05 | 2011-10-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 粒子光学システム及び装置、並びに、かかるシステム及び装置用の粒子光学部品 |
| CN1983028B (zh) | 2003-09-29 | 2012-07-25 | Hoya株式会社 | 掩膜坯及变换掩膜的制造方法 |
| US20050100798A1 (en) * | 2003-10-15 | 2005-05-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device and method for providing wavelength reduction with a photomask |
| US7402373B2 (en) * | 2004-02-05 | 2008-07-22 | E.I. Du Pont De Nemours And Company | UV radiation blocking protective layers compatible with thick film pastes |
| KR101007165B1 (ko) * | 2004-03-16 | 2011-01-12 | 아키레스 가부시키가이샤 | 농업용 차광제 |
| JP4632679B2 (ja) * | 2004-03-16 | 2011-02-16 | アキレス株式会社 | 遮光塗布液 |
| JP4587806B2 (ja) * | 2004-12-27 | 2010-11-24 | Hoya株式会社 | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
| KR20060079957A (ko) * | 2005-01-04 | 2006-07-07 | 삼성에스디아이 주식회사 | 포토리소그래피용 연질 포토마스크, 그 제조방법, 이를채용한 패턴 형성 방법 |
| US7524593B2 (en) * | 2005-08-12 | 2009-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Exposure mask |
| JP2007086368A (ja) * | 2005-09-21 | 2007-04-05 | Fujitsu Ltd | フォトマスク、フォトマスクの製造方法および半導体装置の製造方法 |
| JP2007149155A (ja) * | 2005-11-24 | 2007-06-14 | Hitachi Ltd | 磁気記録媒体、その作製方法、及び磁気ディスク装置 |
| KR100777806B1 (ko) | 2006-03-17 | 2007-11-22 | 한국과학기술원 | 웨이퍼레벨의 패키지 제조방법 및 접착제 조성물 |
| JP4936515B2 (ja) * | 2006-05-18 | 2012-05-23 | Hoya株式会社 | フォトマスクの製造方法、およびハーフトーン型位相シフトマスクの製造方法 |
| JP4155315B2 (ja) * | 2006-06-28 | 2008-09-24 | オムロン株式会社 | 金属膜の製造方法、下地組成物、金属膜およびその利用 |
| KR20090025389A (ko) * | 2006-07-10 | 2009-03-10 | 픽셀리전트 테크놀로지스 엘엘씨 | 포토리소그래피용 레지스트 |
| JP2008032941A (ja) * | 2006-07-27 | 2008-02-14 | Kuraray Co Ltd | 階調マスクおよびその製造方法 |
| KR100800683B1 (ko) * | 2006-08-31 | 2008-02-01 | 동부일렉트로닉스 주식회사 | 반도체 소자의 형성방법 |
| KR100762244B1 (ko) * | 2006-09-29 | 2007-10-01 | 주식회사 하이닉스반도체 | 웨이퍼 패턴 선폭 균일도를 개선하는 포토마스크 및제조방법 |
| US7933000B2 (en) | 2006-11-16 | 2011-04-26 | Asml Netherlands B.V. | Device manufacturing method, method for holding a patterning device and lithographic apparatus including an applicator for applying molecules onto a clamp area of a patterning device |
| US8809458B2 (en) * | 2006-12-01 | 2014-08-19 | Kaneka Corporation | Polysiloxane composition |
| US8582079B2 (en) * | 2007-08-14 | 2013-11-12 | Applied Materials, Inc. | Using phase difference of interference lithography for resolution enhancement |
| US20090111056A1 (en) * | 2007-08-31 | 2009-04-30 | Applied Materials, Inc. | Resolution enhancement techniques combining four beam interference-assisted lithography with other photolithography techniques |
| US20090117491A1 (en) * | 2007-08-31 | 2009-05-07 | Applied Materials, Inc. | Resolution enhancement techniques combining interference-assisted lithography with other photolithography techniques |
| US20100002210A1 (en) * | 2007-08-31 | 2010-01-07 | Applied Materials, Inc. | Integrated interference-assisted lithography |
| KR100928505B1 (ko) * | 2007-10-22 | 2009-11-26 | 주식회사 동부하이텍 | 반도체 소자 제작 방법 및 장치 |
| JP5169206B2 (ja) * | 2007-12-21 | 2013-03-27 | 日本電気株式会社 | フォトマスク受納器並びにこれを用いるレジスト検査方法及びその装置 |
| JP4321652B2 (ja) * | 2007-12-27 | 2009-08-26 | オムロン株式会社 | 金属膜の製造方法 |
| JP4321653B2 (ja) * | 2007-12-27 | 2009-08-26 | オムロン株式会社 | 金属膜の製造方法 |
| JP4458188B2 (ja) * | 2008-09-26 | 2010-04-28 | オムロン株式会社 | ハーフミラーおよびその製造方法 |
| JP2010191310A (ja) * | 2009-02-20 | 2010-09-02 | Hoya Corp | 多階調フォトマスクの製造方法、及び半導体トランジスタの製造方法 |
| KR20100101916A (ko) * | 2009-03-10 | 2010-09-20 | 주식회사 하이닉스반도체 | 형광층을 이용한 위상반전마스크 제조방법 |
| JP5409238B2 (ja) * | 2009-09-29 | 2014-02-05 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置用画素電極の製造方法 |
| NL2005478A (en) * | 2009-11-17 | 2011-05-18 | Asml Netherlands Bv | Lithographic apparatus, removable member and device manufacturing method. |
| JP5611581B2 (ja) * | 2009-12-21 | 2014-10-22 | Hoya株式会社 | マスクブランク及びその製造方法、並びに、転写マスク及びその製造方法 |
| US8349547B1 (en) * | 2009-12-22 | 2013-01-08 | Sandia Corporation | Lithographically defined microporous carbon structures |
| US9465296B2 (en) * | 2010-01-12 | 2016-10-11 | Rolith, Inc. | Nanopatterning method and apparatus |
| JP4853596B1 (ja) | 2011-03-15 | 2012-01-11 | オムロン株式会社 | 酸化金属膜を備えたセンサおよびその利用 |
| US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
| US9298081B2 (en) * | 2013-03-08 | 2016-03-29 | Globalfoundries Inc. | Scattering enhanced thin absorber for EUV reticle and a method of making |
| CN103913957B (zh) * | 2014-03-24 | 2016-08-17 | 京东方科技集团股份有限公司 | 掩膜版、掩膜图案生成控制系统及方法、掩膜系统 |
| KR101600397B1 (ko) * | 2014-04-08 | 2016-03-07 | 성균관대학교산학협력단 | 흑연 박막 및 이의 제조 방법, 및 이를 포함하는 펠리클 |
| CN104483812A (zh) * | 2014-11-29 | 2015-04-01 | 复旦大学 | 利用热显影增强电子束光刻胶对比度的制备高密度平整图形的方法 |
| CN106154773B (zh) * | 2015-04-03 | 2019-03-29 | 中芯国际集成电路制造(上海)有限公司 | 修正图形的方法 |
| JP6715597B2 (ja) * | 2015-12-29 | 2020-07-01 | 帝人株式会社 | 感光性樹脂組成物及び半導体デバイス製造方法 |
| JP6271780B2 (ja) * | 2017-02-01 | 2018-01-31 | Hoya株式会社 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
| US10599046B2 (en) * | 2017-06-02 | 2020-03-24 | Samsung Electronics Co., Ltd. | Method, a non-transitory computer-readable medium, and/or an apparatus for determining whether to order a mask structure |
| JP2020187246A (ja) * | 2019-05-14 | 2020-11-19 | Jsr株式会社 | 感放射線性樹脂組成物を用いた電子装置の製造方法、感放射線性樹脂組成物、絶縁膜及び絶縁膜を備えた電子装置 |
| JP7234816B2 (ja) * | 2019-06-11 | 2023-03-08 | 株式会社デンソー | 測距装置 |
| CN113296354B (zh) * | 2020-02-22 | 2023-04-07 | 长鑫存储技术有限公司 | 应用于半导体光刻工艺中的掩膜版及光刻工艺方法 |
| KR102554083B1 (ko) * | 2022-06-23 | 2023-07-10 | 에스케이엔펄스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5630129A (en) | 1979-08-21 | 1981-03-26 | Agency Of Ind Science & Technol | Manufacture of photomask |
| JPH05289307A (ja) | 1992-04-13 | 1993-11-05 | Matsushita Electric Ind Co Ltd | レチクルおよびレチクル製造方法 |
| US5478679A (en) * | 1994-11-23 | 1995-12-26 | United Microelectronics Corporation | Half-tone self-aligning phase shifting mask |
| EP0731490A3 (en) * | 1995-03-02 | 1998-03-11 | Ebara Corporation | Ultra-fine microfabrication method using an energy beam |
| US6174631B1 (en) * | 1997-02-10 | 2001-01-16 | E. I. Du Pont De Nemours And Company | Attenuating phase shift photomasks |
| TW449672B (en) * | 1997-12-25 | 2001-08-11 | Nippon Kogaku Kk | Process and apparatus for manufacturing photomask and method of manufacturing the same |
| JP2000091192A (ja) | 1998-09-09 | 2000-03-31 | Nikon Corp | 露光装置 |
| TW446852B (en) * | 1999-06-11 | 2001-07-21 | Hoya Corp | Phase shift mask and phase shift mask blank and methods of manufacturing the same |
| US6645695B2 (en) * | 2000-09-11 | 2003-11-11 | Shipley Company, L.L.C. | Photoresist composition |
| US7008749B2 (en) * | 2001-03-12 | 2006-03-07 | The University Of North Carolina At Charlotte | High resolution resists for next generation lithographies |
-
2000
- 2000-12-28 JP JP2000401154A patent/JP3914386B2/ja not_active Expired - Fee Related
-
2001
- 2001-11-01 TW TW090127169A patent/TW516112B/zh not_active IP Right Cessation
- 2001-12-04 KR KR1020010076106A patent/KR100798969B1/ko not_active Expired - Fee Related
- 2001-12-27 US US10/026,973 patent/US6927002B2/en not_active Expired - Lifetime
- 2001-12-28 CN CNB011440740A patent/CN1193405C/zh not_active Expired - Fee Related
-
2002
- 2002-02-12 US US10/072,880 patent/US6703171B2/en not_active Expired - Lifetime
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