JP2002057404A5 - - Google Patents
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- Publication number
- JP2002057404A5 JP2002057404A5 JP2000240067A JP2000240067A JP2002057404A5 JP 2002057404 A5 JP2002057404 A5 JP 2002057404A5 JP 2000240067 A JP2000240067 A JP 2000240067A JP 2000240067 A JP2000240067 A JP 2000240067A JP 2002057404 A5 JP2002057404 A5 JP 2002057404A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- clad layer
- clad
- laser diode
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002347 injection Methods 0.000 description 14
- 239000007924 injection Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000240067A JP4599687B2 (ja) | 2000-08-08 | 2000-08-08 | レーザダイオード、半導体発光装置および製造方法 |
| US09/922,666 US6757311B2 (en) | 2000-08-08 | 2001-08-07 | Laser diode, semiconductor light-emitting device, and method of production thereof |
| EP01402138A EP1182751B1 (en) | 2000-08-08 | 2001-08-08 | Laser diode, semiconductor light-emitting device, and method of production thereof |
| DE60109534T DE60109534T2 (de) | 2000-08-08 | 2001-08-08 | Laserdiode, lichtemittierendes Halbleiterelement und dessen Herstellung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000240067A JP4599687B2 (ja) | 2000-08-08 | 2000-08-08 | レーザダイオード、半導体発光装置および製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002057404A JP2002057404A (ja) | 2002-02-22 |
| JP2002057404A5 true JP2002057404A5 (https=) | 2007-02-22 |
| JP4599687B2 JP4599687B2 (ja) | 2010-12-15 |
Family
ID=18731495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000240067A Expired - Fee Related JP4599687B2 (ja) | 2000-08-08 | 2000-08-08 | レーザダイオード、半導体発光装置および製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6757311B2 (https=) |
| EP (1) | EP1182751B1 (https=) |
| JP (1) | JP4599687B2 (https=) |
| DE (1) | DE60109534T2 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7069080B2 (en) | 2000-09-18 | 2006-06-27 | Cameron Health, Inc. | Active housing and subcutaneous electrode cardioversion/defibrillating system |
| US6754528B2 (en) | 2001-11-21 | 2004-06-22 | Cameraon Health, Inc. | Apparatus and method of arrhythmia detection in a subcutaneous implantable cardioverter/defibrillator |
| US7146212B2 (en) | 2000-09-18 | 2006-12-05 | Cameron Health, Inc. | Anti-bradycardia pacing for a subcutaneous implantable cardioverter-defibrillator |
| US7194302B2 (en) | 2000-09-18 | 2007-03-20 | Cameron Health, Inc. | Subcutaneous cardiac stimulator with small contact surface electrodes |
| US6647292B1 (en) * | 2000-09-18 | 2003-11-11 | Cameron Health | Unitary subcutaneous only implantable cardioverter-defibrillator and optional pacer |
| US6833563B2 (en) * | 2001-09-25 | 2004-12-21 | Intel Corporation | Multi-stack surface mount light emitting diodes |
| JP2004103839A (ja) * | 2002-09-10 | 2004-04-02 | Canon Inc | 半導体マルチビームレーザ装置及び画像形成装置 |
| JP2004186259A (ja) * | 2002-11-29 | 2004-07-02 | Toshiba Corp | 半導体レーザ素子、その製造方法、および多波長集積化半導体レーザ装置 |
| JP2004193330A (ja) * | 2002-12-11 | 2004-07-08 | Sharp Corp | モノリシック多波長レーザ素子とその製法 |
| JP2005109102A (ja) * | 2003-09-30 | 2005-04-21 | Mitsubishi Electric Corp | モノリシック半導体レーザおよびその製造方法 |
| WO2005039001A1 (ja) * | 2003-10-15 | 2005-04-28 | Sanyo Electric Co., Ltd | ２ビーム半導体レーザ装置 |
| JP4224041B2 (ja) * | 2004-08-26 | 2009-02-12 | シャープ株式会社 | 半導体レーザ素子、半導体レーザ素子の製造方法、光ディスク装置および光伝送システム |
| JP4460473B2 (ja) | 2005-02-23 | 2010-05-12 | シャープ株式会社 | 半導体レーザ装置の製造方法 |
| JP2006313875A (ja) * | 2005-04-08 | 2006-11-16 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| JP2007048813A (ja) * | 2005-08-08 | 2007-02-22 | Mitsubishi Electric Corp | 半導体レーザ装置およびその製造方法 |
| US7687870B2 (en) * | 2006-12-29 | 2010-03-30 | Panasonic Corporation | Laterally configured electrooptical devices |
| JP2008235442A (ja) * | 2007-03-19 | 2008-10-02 | Fujitsu Ltd | 半導体発光素子及びその製造方法 |
| JP4965354B2 (ja) * | 2007-06-20 | 2012-07-04 | 株式会社リコー | 半導体レーザ装置、光書込器およびプリンタ装置 |
| JP7831140B2 (ja) * | 2022-05-31 | 2026-03-17 | ウシオ電機株式会社 | 半導体レーザ装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5071281A (https=) * | 1973-10-26 | 1975-06-13 | ||
| JPS63254785A (ja) * | 1987-04-10 | 1988-10-21 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
| US4961197A (en) * | 1988-09-07 | 1990-10-02 | Hitachi, Ltd. | Semiconductor laser device |
| NL8900748A (nl) * | 1989-03-28 | 1990-10-16 | Philips Nv | Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. |
| JPH03156988A (ja) * | 1989-11-15 | 1991-07-04 | Fujitsu Ltd | 半導体レーザ |
| JPH0888439A (ja) * | 1994-09-16 | 1996-04-02 | Rohm Co Ltd | 半導体レーザおよびその製法 |
| US5787105A (en) * | 1995-01-20 | 1998-07-28 | Nikon Corporation | Integrated semiconductor laser apparatus |
| JP3381534B2 (ja) | 1996-11-19 | 2003-03-04 | ソニー株式会社 | 自励発振型半導体レーザ |
| JP2000011417A (ja) * | 1998-06-26 | 2000-01-14 | Toshiba Corp | 半導体レーザアレイ及びその製造方法、光集積ユニット、光ピックアップ並びに光ディスク駆動装置 |
| US6358764B1 (en) * | 1999-12-17 | 2002-03-19 | Sony Corporation | Semiconductor light emitting device and method of producing same |
-
2000
- 2000-08-08 JP JP2000240067A patent/JP4599687B2/ja not_active Expired - Fee Related
-
2001
- 2001-08-07 US US09/922,666 patent/US6757311B2/en not_active Expired - Fee Related
- 2001-08-08 EP EP01402138A patent/EP1182751B1/en not_active Expired - Lifetime
- 2001-08-08 DE DE60109534T patent/DE60109534T2/de not_active Expired - Lifetime
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