JP2001068788A5 - - Google Patents
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- JP2001068788A5 JP2001068788A5 JP1999240625A JP24062599A JP2001068788A5 JP 2001068788 A5 JP2001068788 A5 JP 2001068788A5 JP 1999240625 A JP1999240625 A JP 1999240625A JP 24062599 A JP24062599 A JP 24062599A JP 2001068788 A5 JP2001068788 A5 JP 2001068788A5
- Authority
- JP
- Japan
- Prior art keywords
- embedded
- layer
- clad layer
- conductive type
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 description 76
- 239000004065 semiconductor Substances 0.000 description 31
- 239000000463 material Substances 0.000 description 18
- 239000011241 protective layer Substances 0.000 description 15
- 239000000203 mixture Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 208000031481 Pathologic Constriction Diseases 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 208000037804 stenosis Diseases 0.000 description 1
- 230000036262 stenosis Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24062599A JP2001068788A (ja) | 1999-08-26 | 1999-08-26 | 埋め込みヘテロ型半導体レーザ素子およびその製造方法並びにそれを用いた光モジュール |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24062599A JP2001068788A (ja) | 1999-08-26 | 1999-08-26 | 埋め込みヘテロ型半導体レーザ素子およびその製造方法並びにそれを用いた光モジュール |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001068788A JP2001068788A (ja) | 2001-03-16 |
| JP2001068788A5 true JP2001068788A5 (https=) | 2006-01-05 |
Family
ID=17062289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24062599A Pending JP2001068788A (ja) | 1999-08-26 | 1999-08-26 | 埋め込みヘテロ型半導体レーザ素子およびその製造方法並びにそれを用いた光モジュール |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001068788A (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006286809A (ja) * | 2005-03-31 | 2006-10-19 | Fujitsu Ltd | 光半導体デバイス及びその製造方法 |
| JP2008053539A (ja) * | 2006-08-25 | 2008-03-06 | Sumitomo Electric Ind Ltd | 半導体光素子 |
| US12489274B2 (en) * | 2020-01-22 | 2025-12-02 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing semiconductor device |
-
1999
- 1999-08-26 JP JP24062599A patent/JP2001068788A/ja active Pending
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