JP2001237006A - 接続材料 - Google Patents
接続材料Info
- Publication number
- JP2001237006A JP2001237006A JP2000050486A JP2000050486A JP2001237006A JP 2001237006 A JP2001237006 A JP 2001237006A JP 2000050486 A JP2000050486 A JP 2000050486A JP 2000050486 A JP2000050486 A JP 2000050486A JP 2001237006 A JP2001237006 A JP 2001237006A
- Authority
- JP
- Japan
- Prior art keywords
- connection material
- metal ion
- resin
- connection
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 56
- 239000002245 particle Substances 0.000 claims abstract description 53
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 40
- 229920005989 resin Polymers 0.000 claims abstract description 39
- 239000011347 resin Substances 0.000 claims abstract description 39
- 239000002516 radical scavenger Substances 0.000 claims abstract description 23
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 19
- -1 vinyl triazine compound Chemical class 0.000 claims description 8
- 229910001451 bismuth ion Inorganic materials 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract description 9
- 230000001070 adhesive effect Effects 0.000 abstract description 4
- 239000004020 conductor Substances 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 description 20
- 239000011521 glass Substances 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 12
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 9
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 8
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 229910052787 antimony Inorganic materials 0.000 description 6
- 238000005311 autocorrelation function Methods 0.000 description 6
- 230000005012 migration Effects 0.000 description 6
- 238000013508 migration Methods 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 229910052797 bismuth Inorganic materials 0.000 description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical group [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229920005992 thermoplastic resin Polymers 0.000 description 4
- ZXLYUNPVVODNRE-UHFFFAOYSA-N 6-ethenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=C)=N1 ZXLYUNPVVODNRE-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910001439 antimony ion Inorganic materials 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000013034 phenoxy resin Substances 0.000 description 2
- 229920006287 phenoxy resin Polymers 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- JIHQDMXYYFUGFV-UHFFFAOYSA-N 1,3,5-triazine Chemical compound C1=NC=NC=N1 JIHQDMXYYFUGFV-UHFFFAOYSA-N 0.000 description 1
- HHOJVZAEHZGDRB-UHFFFAOYSA-N 2-(4,6-diamino-1,3,5-triazin-2-yl)ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC1=NC(N)=NC(N)=N1 HHOJVZAEHZGDRB-UHFFFAOYSA-N 0.000 description 1
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- MGTVNFGFEXMEBM-UHFFFAOYSA-N 4-ethenyltriazine Chemical compound C=CC1=CC=NN=N1 MGTVNFGFEXMEBM-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 238000005341 cation exchange Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001688 coating polymer Polymers 0.000 description 1
- 230000009918 complex formation Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 125000000466 oxiranyl group Chemical group 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/29001—Core members of the layer connector
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- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
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- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29355—Nickel [Ni] as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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Abstract
圧または高電流が印加される場合でも隣接する電極間が
短絡することがなく、高電圧、または高電流用の相対す
る電極を有する被接続部材の接続に使用することが可能
な接続材料を提供する。 【解決手段】 相対する電極を有する被接続部材を接続
するための接続材料であって、熱硬化性樹脂を主成分と
する樹脂成分と、樹脂成分に対して1〜60重量%の電
極から解離する金属イオンを捕捉する金属イオン捕捉剤
と導電性材料とを含み、金属イオン捕捉剤は導電性粒子
よりも小さい粒径を有する接続材料。
Description
る被接続部材を接続するための接続材料、特に高電圧、
高電流がかかる電極を有する被接続部材を接続するのに
適した接続材料に関するものである。
するための接続材料として、従来用いられていたハンダ
に代えて異方性導電膜(以下、ACFという場合があ
る)が用いられるようになっている。このACFは熱硬
化性樹脂中に導電性粒子を分散させた接続材料であり、
被接続部材間に介在させて熱圧着することにより、電極
間では導電性粒子が電極と接触して電気的接続を行い、
電極の存在しない部分では導電性粒子が分散した状態で
樹脂が硬化し、絶縁と機械的固着を行うようにされてい
る。
的に接続し、隣接する電極間は絶縁される異方導電性を
有している。プリント基板に半導体素子を実装する場
合、あるいはプリント基板に他のプリント基板例えばフ
レキシブルプリント基板(以下、FPCという場合があ
る)を接続する場合などに用いられており、通常の液晶
表示装置(以下、LCDという場合がある)においても
採用されている。
圧、低電流の電極を接続する場合に適しており、高電
圧、高電流が電極に印加される場合には電気的接続性な
いし絶縁性を確保できないとされている。例えばプラズ
マディスプレイパネル(以下、PDPという場合があ
る)では50〜500V、500mA〜2Aの高電圧、
高電流が印加されるため、例えばPDPとFPCの接続
の場合はACFによる接続は困難であり、依然としてハ
ンダによる接続が行われていた。
できない原因を調べたところ、通電中の電極金属のマイ
グレーションにより隣接する電極間が短絡することが大
きな原因であることがわかった。このようなマイグレー
ションは高電圧、または高電流であるほど大きいことが
わかった。
性、電気的接続性、絶縁性に優れ、高電圧または高電流
が印加される場合でも隣接する電極間が短絡することが
なく、高電圧、または高電流用の相対する電極を有する
被接続部材の接続に使用することが可能な接続材料を提
供することである。
ある。 (1) 相対する電極を有する被接続部材を接続するた
めの接続材料であって、熱硬化性樹脂を主成分とする樹
脂成分と、樹脂成分に対して1〜60重量%の電極から
解離する金属イオンを捕捉する金属イオン捕捉剤と導電
性粒子とを含み、金属イオン捕捉剤は導電性粒子よりも
小さい粒径を有する接続材料。 (2) 導電性粒子の粒径が1〜20μm、金属イオン
捕捉剤の粒径が0.1〜10μmである上記(1)記載
の接続材料。 (3) 金属イオン捕捉剤がビスマス系イオン交換体お
よび/またはビニルトリアジン化合物である上記(1)
または(2)記載の接続材料。 (4) 金属イオン捕捉剤の比表面積が0.8〜100
m2/gである上記(1)ないし(3)のいずれかに記
載の接続材料。 (5) 相対する電極に印加される電圧が50〜500
Vである上記(1)ないし(4)のいずれかに記載の接
続材料。
材は、相対する電極、特に多数の電極を有する部材がす
べて対象になるが、50〜500V、特に70〜300
Vの高電圧または100mA〜10A、特に200mA
〜5Aの高電流が印加される電極を有する接続部材の接
続に適している。このような被接続部材の接続としては
前述のPDPまたはその駆動用のプリント基板とこれら
を結ぶFPCとの接続などがあげられる。これらの被接
続部材を構成する基板としてはガラス基板、樹脂基板な
どがあげられ、FPCにはポリイミド樹脂基板が用いら
れることが多い。これらの基板に形成される電極として
銀、銅、ニッケル、クロムなど、金属イオンとして解離
する金属を含む電極があげられるが、解離しない金属が
含まれていてもよい。
粒子および金属イオン捕捉剤を含み、この接続材料を被
接続部材間に介在させ、両側から加圧して相対する電極
を押しつけて導電性粒子と接触させ、樹脂を電極の存在
しない部分に集め、この部分では導電性粒子を分散させ
た状態で硬化させて接着することにより、電気的接続と
機械的固着を行うように構成される。
主剤樹脂としてはエポキシ樹脂、ウレタン樹脂、フェノ
ール樹脂、水酸基含有ポリエステル樹脂、水酸基含有ア
クリル樹脂など、硬化剤との併用により加熱下またはU
V等の光照射下により硬化する樹脂が制限なく使用でき
るが、特にその硬化温度、時間、保存安定性等のバラン
スからエポキシ樹脂が好ましい。エポキシ樹脂として
は、ビスフェノール型エポキシ樹脂、エポキシノボラッ
ク樹脂または分子内に2個以上のオキシラン基を有する
エポキシ化合物等が使用できる。これらの樹脂には市販
品がそのまま使用できる。
化剤と併用することにより硬化反応を行うことができる
が、主剤樹脂に硬化反応に寄与する官能基が結合してい
る場合は硬化剤を省略することができる。硬化剤として
はイミダゾール、アミン、酸無水物、ヒドラジッド、ジ
シアンジアミド、これらの変性物など、加熱、光照射等
により主剤樹脂と反応して硬化反応を行うものが使用で
き、市販品でもよい。このような硬化剤としては潜在性
硬化剤が好ましい。
らびに比較的低温(40〜100℃)による乾燥時には
硬化反応を行わず、硬化温度における加熱加圧(熱圧
着)またはUV等の光照射により硬化反応を行う硬化剤
である。このような潜在性硬化剤としてはイミダゾー
ル、アミン等の上記の硬化剤成分をマイクロカプセル化
したものなどが特に好ましく、市販品をそのまま使用す
ることもできる。熱活性の場合、硬化開始温度としては
80〜150℃のものが好ましい。
の金属粒子、高分子核材粒子をメッキ等により導電材で
被覆した導電材被覆粒子、またはこれらの導電性の粒子
を絶縁性樹脂で被覆した絶縁材被覆導電性粒子などが使
用できる。これらの導電性粒子の平均粒径は1〜20μ
m、好ましくは3〜10μmとすることができる。
属イオンとして解離したときに、この金属イオンを捕捉
してマイグレーションを防止する化合物であり、イオン
交換体、錯体形成剤等が利用でき、無機質のものでも有
機質のものでもよい。無機質のものとしては、例えばビ
スマス系イオン交換体、アンチモン系イオン交換体、ビ
スマス・アンチモン系イオン系交換体など、有機質のも
のとしてはビニルトリアジン化合物などがあげられる。
成成分として含むイオン交換体であって、BiO(O
H)、BiO(OH)0.7(NO3)0.3、BiO(O
H)0.74(NO3)0.15(HSiO3)0.11などがあげら
れる。アンチモン系イオン交換体はアンチモンを構成成
分として含むイオン交換体であって、Sb2O2・2H2
Oなどがあげられる。ビスマス・アンチモン系イオン交
換体はビスマスとアンチモンを構成成分として含むイオ
ン交換体であり、上記ビスマス系イオン交換体とアンチ
モン系イオン交換体を任意の割合、例えば5:5〜7:
3で配合した組成物などがあげられる。これらのイオン
交換体は陽イオン交換により金属イオンを捕捉するもの
と推測される。
ン、その誘導体、またはこれらの酸付加物などがあげら
れる。これらの中では下記式(1)で示される2,4−
ジアミノ−6−ビニル−s−トリアジン、式(2)で示
される2,4−ジアミノ−6−ビニル−s−トリアジン
・イソシアヌル酸付加物、および式(3)で示される
2,4−ジアミノ−6−メタクリロイルオキシエチル−
s−トリアジン・イソシアヌル酸付加物が好ましい。こ
れらのトリアジン化合物は解離した金属イオンを錯体形
成により捕捉するものと推測される。
小さい粒径のものを使用する。このような平均粒径とし
て0.1〜10μm、好ましくは0.1〜3μmとする
ことができる。金属イオン捕捉剤の粒径を導電性粒子よ
り小さくすることにより、接続時の電気的接続性を良好
にすることができる。金属イオン捕捉剤は比表面積が
0.8〜100m2/g、好ましくは1〜50m2/gの
ものを用いるのが好ましく、これにより金属イオンとの
接触の機会を多くしてマイグレーションを有効に防止す
ることができる。
に塗布性あるいはフィルム成形性を付与するために熱可
塑性樹脂を配合することができる。このような熱可塑性
樹脂としてはフェノキシ樹脂、ポリエステル樹脂、アク
リル樹脂等が使用できる。このほか本発明の接続材料に
は必要により他の添加剤を配合することができる。他の
添加剤としては、例えばガラス基板との親和性を高める
ためにシランカップリング剤、界面活性剤、老化防止剤
等があげられる。
割合は0〜100重量%、好ましくは0〜99重量%と
することができる。金属イオン捕捉剤はこれらの樹脂成
分の合計量に対して1〜60重量%、好ましくは3〜5
0重量%配合される。他の添加剤の配合割合は接着剤成
分中10重量%以下、好ましくは5重量%以下とするこ
とができる。導電性粒子の配合割合は前記各成分からな
る接着剤成分に対して1〜50容量%、好ましくは1〜
30容量%とすることができる。
ルム状の形態の製品とすることができる。ペースト状と
する場合は、材料の選択により無溶媒でペースト状とす
ることができるが、一般的には上記の各成分を溶媒に溶
解または分散させてペースト状とすることができる。溶
媒としては、アルコール、ケトン、エステル、エーテ
ル、フェノール類、アセタール、窒素含有炭化水素のよ
うな溶媒が使用でき、例えば、トルエン、MEK、酢酸
エチル、セロソルブアセテート等があげられる。溶媒の
使用量は、樹脂成分に対して20〜40重量%程度であ
る。フィルム状とする場合は上記のペーストを剥離処理
したPET(ポリエチレンテレフタレート)等の剥離シ
ートにフィルム状に塗布し、溶媒を揮発させることによ
り成形することができる。
接続部材としての例えばガラス基板とFPC間に介在さ
せた状態で、被接続部材の両側から加圧、加熱して、樹
脂を硬化させることにより接続を行う。接続材料がペー
スト状の場合は被接続部材の電極を含む接続領域に接続
材料を塗布し、乾燥後あるいは乾燥することなく被接続
部材を重ねて圧着し、硬化させる。接続材料がフィルム
状の場合は、接続材料を被接続部材間に介在させて加
圧、加熱、硬化を行う。硬化は加熱のほかUV等の光照
射によって行うこともできる。
続材料を介在させた状態で加熱して接続材料の樹脂を溶
解させ加圧すると、接続材料の樹脂は電極の対向する部
分から電極のない部分に流れ、導電性粒子が電極間に残
って電極間に接触して圧着する。電極のない部分に流れ
た樹脂分はその部分で導電性粒子を分散させた状態で硬
化して被接続部材間を固着する。これにより電極間の電
気的接続と被接続部材間の機械的固着が行われる。
径の金属捕捉剤を用いるため電極のピッチ、面積および
間隔が狭い場合でも機械的固着および電気的接続は良好
に行われる。
粒子およびこれよりも小粒径の金属イオン捕捉剤を用い
るため、接着性、電気的接続性、絶縁性に優れ、高電圧
または高電流が印加される場合でも隣接する電極間が短
絡することがなく、高電圧、または高電流用の相対する
電極を有する被接続部材の接続に使用することが可能で
ある。このようにして接続されたPDP等の接続体は電
極に高電圧または高電流を印加して使用されるが、これ
によって電極から解離する金属イオンは金属イオン捕捉
剤によって捕捉されてマイグレーションが抑制され、マ
イグレーションによる短絡が防止される。
により説明する。図1(a)は実施形態の接続材料によ
る接続中の状態を示す模式的断面図、(b)は接続後の
状態を示す模式的断面図である。
ラス基板で、銀からなる電極2を有する。3はFPCに
用いられるフレキシブル基板で、ニッケル−金メッキさ
れた銅箔等の電極4を有する。電極2および4は相対す
る位置に設けられ、図1(a)のように対向した状態で
フィルム状の接続材料5を挟んで接続する。接続材料5
は熱硬化性樹脂を主成分とする樹脂6と、導電性粒子7
と、導電性粒子7よりも粒径の小さい金属イオン捕捉剤
8から形成される。ペースト状接続材料を用いるときは
ガラス基板1にコーティングする。
ス基板1に接続材料5を載せ、これを挟むようにフレキ
シブル基板3を対向させて置き、接続材料5を加熱しな
がら上下方向に加圧する。これにより接続材料5の樹脂
6は溶融して、電極2、4が存在しない部分のガラス基
板1とフレキシブル基板3間の間隙9に流れて硬化し、
図1(b)に示すような接続体10が得られる。
が残留して接触し、この状態で樹脂6が硬化収縮して電
極2と電極4が導電性粒子7を圧着し、電気的接続状態
を保つ。接続材料5に金属イオン捕捉剤8として導電性
粒子7よりも粒径の小さいものを用いることにより、電
極2、4と導電性粒子7の接触は良好に保たれ、優れた
接着強度と電気的接続信頼性を得ることができる。
PCとを接続する場合を示しているが、PDP駆動用の
プリント基板とFPCとの接続、その他の被接続部材間
の接続にも適用することができる。
A型エポキシ樹脂(油化シェル社製、828、商品
名)、硬化剤としてイミダゾール硬化剤(四国化成工業
社製、2E4MZ、商品名)、熱可塑性樹脂としてフェ
ノキシ樹脂(東都化成社製、YP50、商品名)、導電
性粒子(積水ファインケミカル社製、AU−205、商
品名、平均粒径5μm)、カップリング剤としてエポキ
シシラン(日本ユニカー社製、A187、商品名)、金
属イオン捕捉剤Aとしてビスマス・アンチモン型イオン
交換体(東亜合成(株)社製、IXE−633、商品
名)、金属イオン捕捉剤Bとしてビニルトリアジン化合
物として2,4−ジアミノ−6−ビニル−s−トリアジ
ン・イソシアヌル酸付加物(四国化成工業社製、VT・
OK、商品名)、金属イオン捕捉剤Cとして2,4−ジ
アミノ−6−メチクリロイルオキシエチル−s−トリア
ジン・イソシアヌル酸付加物(四国化成工業社製、MA
VT・OK、商品名)を表1、2の組成で用い、トルエ
ンに溶解させてペースト状とした。これをポリエチレン
テレフタレート製剥離フィルム上に乾燥膜厚40μmと
なるようにコーティングし、80℃の熱風循環式オーブ
ン中に5分間放置してフィルム状の接続材料を得た。
D200、商品名)に0.2mmピッチ(ライン/スペ
ース=1/1)、厚さ5〜10μmの銀層からなる電極
パターンを形成し、一方FPCとしてポリイミド樹脂に
0.2mmピッチ(ライン/スペース=1/1)、厚さ
18μmのニッケル−金メッキ銅層からなる電極パター
ンを形成した。これらのガラス基板とFPCを電極を対
向させ、前記フィルム状の接続材料を挟んで、200
℃、40kgf/cm2で10分間熱圧着し、接続体を
得た。
の各電極間の導通試験を行い、抵抗値が5Ω未満のもの
を○、5Ω以上10Ω未満を△、10Ω以上を×と判定
した。
期絶縁抵抗値と、60℃、相対湿度85%環境下で10
0VDCを隣接する電極間に100時間印加した後の絶
縁抵抗値を測定し、106Ω以上を○、106Ω未満にな
った場合は、不合格として106Ω未満になった時間を
表示した。
結果より、金属イオン捕捉剤が1重量%未満の比較例1
では絶縁抵抗値の低下が著しい。金属イオン捕捉剤が6
0重量%を超える比較例2、3および金属イオン捕捉剤
の平均粒径が導電性粒子の平均粒径より大きい比較例4
では電気的接続性が劣ることがわかる。
態を示す模式的断面図、(b)は接続後の状態を示す模
式的断面図である。
Claims (5)
- 【請求項1】 相対する電極を有する被接続部材を接続
するための接続材料であって、 熱硬化性樹脂を主成分とする樹脂成分と、樹脂成分に対
して1〜60重量%の電極から解離する金属イオンを捕
捉する金属イオン捕捉剤と導電性粒子とを含み、 金属イオン捕捉剤は導電性粒子よりも小さい粒径を有す
る接続材料。 - 【請求項2】 導電性粒子の粒径が1〜20μm、金属
イオン捕捉剤の粒径が0.1〜10μmである請求項1
記載の接続材料。 - 【請求項3】 金属イオン捕捉剤がビスマス系イオン交
換体および/またはビニルトリアジン化合物である請求
項1または2記載の接続材料。 - 【請求項4】 金属イオン捕捉剤の比表面積が0.8〜
100m2/gである請求項1ないし3のいずれかに記
載の接続材料。 - 【請求項5】 相対する電極に印加される電圧が50〜
500Vである請求項1ないし4のいずれかに記載の接
続材料。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000050486A JP3633422B2 (ja) | 2000-02-22 | 2000-02-22 | 接続材料 |
US09/784,099 US6576334B2 (en) | 2000-02-22 | 2001-02-16 | Bonding materials |
TW90103688A TW478207B (en) | 2000-02-22 | 2001-02-19 | Bonding materials |
CNB011123664A CN1211450C (zh) | 2000-02-22 | 2001-02-21 | 连接材料 |
KR10-2001-0008870A KR100538956B1 (ko) | 2000-02-22 | 2001-02-22 | 접속재료 |
HK02102402.6A HK1040736B (zh) | 2000-02-22 | 2002-03-28 | 連接材料 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000050486A JP3633422B2 (ja) | 2000-02-22 | 2000-02-22 | 接続材料 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2001237006A true JP2001237006A (ja) | 2001-08-31 |
JP3633422B2 JP3633422B2 (ja) | 2005-03-30 |
Family
ID=18572265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000050486A Expired - Fee Related JP3633422B2 (ja) | 2000-02-22 | 2000-02-22 | 接続材料 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6576334B2 (ja) |
JP (1) | JP3633422B2 (ja) |
KR (1) | KR100538956B1 (ja) |
CN (1) | CN1211450C (ja) |
HK (1) | HK1040736B (ja) |
TW (1) | TW478207B (ja) |
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-
2000
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-
2001
- 2001-02-16 US US09/784,099 patent/US6576334B2/en not_active Expired - Lifetime
- 2001-02-19 TW TW90103688A patent/TW478207B/zh not_active IP Right Cessation
- 2001-02-21 CN CNB011123664A patent/CN1211450C/zh not_active Expired - Fee Related
- 2001-02-22 KR KR10-2001-0008870A patent/KR100538956B1/ko not_active IP Right Cessation
-
2002
- 2002-03-28 HK HK02102402.6A patent/HK1040736B/zh not_active IP Right Cessation
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JPWO2013035868A1 (ja) * | 2011-09-09 | 2015-03-23 | ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェンHenkel AG & Co.KGaA | 電子装置用組成物 |
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US9334429B2 (en) | 2011-09-09 | 2016-05-10 | Henkel Ag & Co. Kgaa | Underfill sealant composition |
US9576871B2 (en) | 2011-09-09 | 2017-02-21 | Henkel Ag & Co. Kgaa | Composition for electronic device |
WO2013035868A1 (ja) * | 2011-09-09 | 2013-03-14 | ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェン | 電子装置用組成物 |
JP2013140936A (ja) * | 2012-01-03 | 2013-07-18 | ▲き▼邦科技股▲分▼有限公司 | 半導体パッケージの製造方法及び半導体パッケージ |
JP2013140937A (ja) * | 2012-01-03 | 2013-07-18 | ▲き▼邦科技股▲分▼有限公司 | 半導体実装方法および半導体実装品 |
Also Published As
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CN1316481A (zh) | 2001-10-10 |
US6576334B2 (en) | 2003-06-10 |
KR100538956B1 (ko) | 2005-12-26 |
JP3633422B2 (ja) | 2005-03-30 |
HK1040736A1 (en) | 2002-06-21 |
KR20010083236A (ko) | 2001-08-31 |
US20010021547A1 (en) | 2001-09-13 |
CN1211450C (zh) | 2005-07-20 |
TW478207B (en) | 2002-03-01 |
HK1040736B (zh) | 2006-03-10 |
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