JP2008098646A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2008098646A JP2008098646A JP2007270704A JP2007270704A JP2008098646A JP 2008098646 A JP2008098646 A JP 2008098646A JP 2007270704 A JP2007270704 A JP 2007270704A JP 2007270704 A JP2007270704 A JP 2007270704A JP 2008098646 A JP2008098646 A JP 2008098646A
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- Prior art keywords
- wiring
- metal ion
- semiconductor device
- sealing resin
- ion binder
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- YTFXKURWTLWPKK-UHFFFAOYSA-N O=C(NCN1)NC1=O Chemical compound O=C(NCN1)NC1=O YTFXKURWTLWPKK-UHFFFAOYSA-N 0.000 description 3
- ZFSLODLOARCGLH-UHFFFAOYSA-N O=C(NC(N1)=O)NC1=O Chemical compound O=C(NC(N1)=O)NC1=O ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Abstract
【解決手段】ベースフィルム1に複数の配線9が配置されたフレキシブル配線基板11と、上記フレキシブル配線基板11に搭載された半導体チップ5と、フレキシブル配線基板11と半導体チップ5との間に、少なくとも一部が配線9に接するように配置された封止樹脂6を有し、封止樹脂6に金属イオン結合剤が混合されている。
【選択図】図2
Description
10.0重量%添加・混合した材料を使用したことを特徴とする第3の半導体装置。
5 半導体チップ(半導体素子)
6 封止樹脂
7 ソルダーレジスト
8 スズメッキ
9 配線
10 半導体装置
11 フレキシブル配線基板(配線基板)
Claims (6)
- 基材に複数の配線が配置された配線基板と、
上記配線基板に搭載された半導体素子と、を含む、COF構造若しくはTCP構造を有する半導体装置において、
上記基板がフイルム状のフレキシブル基板であり、
金属イオン結合剤が、上記配線と接する部材の材料に混合されており、
上記配線と接する部材の材料は封止樹脂であり、
上記金属イオン結合剤が、ベンゾトリアゾール類、トリアジン類、および、これらのイソシアヌル酸付加物から選ばれる少なくとも1つの化合物を含み、
上記封止樹脂が、配線基板と半導体素子との間に充填されるときに、粘度50mPa・s以上1250mPa・s以下であり、
上記封止樹脂が、上記金属イオン結合剤を0.5重量%以上10.0重量%以下含んでおり、
上記金属イオン結合剤は、平均直径が1μm以下であり、
上記配線同士の間隔が50μm以下であり、
上記封止樹脂は、半導体素子の側面および接合面と、フレキシブル基板の搭載面との間に位置することを特徴とする半導体装置。 - 上記配線が基材表面に形成されており、
基材が金属イオン結合剤を含んでいることを特徴とする請求項1に記載の半導体装置。 - さらに、配線表面を覆うようにソルダーレジストが形成されており、
ソルダーレジストが金属イオン結合剤を含んでいることを特徴とする請求項1又は2に記載の半導体装置。 - 上記金属イオン結合剤が、ベンゾトリアゾール類、ベンゾトリアゾール類のイソシアヌル酸付加物、トリアジン類のイソシアヌル酸付加物から選ばれる少なくとも1つの化合物を含むことを特徴とする請求項1から3の何れか1項に記載の半導体装置。
- 半導体素子が、テープキャリア方式により配線基板に搭載されていることを特徴とする請求項1から4の何れか1項に記載の半導体装置。
- 液晶表示素子が搭載されていることを特徴とする請求項1から5の何れか1項に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2007270704A JP5014945B2 (ja) | 2007-10-17 | 2007-10-17 | 半導体装置 |
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JP2007270704A JP5014945B2 (ja) | 2007-10-17 | 2007-10-17 | 半導体装置 |
Related Parent Applications (1)
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JP2004152372A Division JP4451214B2 (ja) | 2004-05-21 | 2004-05-21 | 半導体装置 |
Related Child Applications (1)
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JP2011030965A Division JP5296116B2 (ja) | 2011-02-16 | 2011-02-16 | 半導体装置 |
Publications (2)
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JP2008098646A true JP2008098646A (ja) | 2008-04-24 |
JP5014945B2 JP5014945B2 (ja) | 2012-08-29 |
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JP2007270704A Active JP5014945B2 (ja) | 2007-10-17 | 2007-10-17 | 半導体装置 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2107798A1 (en) | 2008-04-04 | 2009-10-07 | Sony Corporation | Imaging apparatus, image processing apparatus, and exposure control method |
JP2012127949A (ja) * | 2010-12-15 | 2012-07-05 | Electric Power Research Inst Inc | 軽水炉一次冷却材の放射能浄化 |
WO2013035868A1 (ja) | 2011-09-09 | 2013-03-14 | ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェン | 電子装置用組成物 |
US8546162B2 (en) | 2010-10-07 | 2013-10-01 | Samsung Electronics Co., Ltd. | Method for forming light guide layer in semiconductor substrate |
US9334429B2 (en) | 2011-09-09 | 2016-05-10 | Henkel Ag & Co. Kgaa | Underfill sealant composition |
Citations (27)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6153332A (ja) * | 1984-08-23 | 1986-03-17 | Shin Kobe Electric Mach Co Ltd | 積層板の製造法 |
JPS63234013A (ja) * | 1987-03-23 | 1988-09-29 | Tatsuta Electric Wire & Cable Co Ltd | 半導体封止用樹脂組成物 |
JPH01155683A (ja) * | 1987-12-11 | 1989-06-19 | Ibiden Co Ltd | プリント配線板の製造方法 |
JPH01251785A (ja) * | 1988-03-31 | 1989-10-06 | Hitachi Chem Co Ltd | 印刷配線板の後処理方法 |
JPH02135764A (ja) * | 1988-11-16 | 1990-05-24 | Ibiden Co Ltd | 電子部品搭載用基板 |
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JPH10321994A (ja) * | 1997-05-16 | 1998-12-04 | Senju Metal Ind Co Ltd | 電子機器の導電部におけるマイグレーション防止方法 |
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JP2001257451A (ja) * | 2000-03-09 | 2001-09-21 | Matsushita Electric Ind Co Ltd | プリント配線板およびプリント配線板の製造方法 |
JP2002201448A (ja) * | 2000-12-27 | 2002-07-19 | Ricoh Co Ltd | 導電性接着剤 |
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JP2003023035A (ja) * | 2001-07-05 | 2003-01-24 | Sharp Corp | 半導体装置 |
JP2003025470A (ja) * | 2001-07-13 | 2003-01-29 | Seiren Co Ltd | 導電性メッシュ織物及びその製造方法 |
JP2003092379A (ja) * | 2001-09-18 | 2003-03-28 | Hitachi Ltd | 半導体装置 |
JP2003152301A (ja) * | 2001-11-16 | 2003-05-23 | Mitsubishi Electric Corp | プリント配線板およびその製造方法 |
JP2003318177A (ja) * | 2002-04-19 | 2003-11-07 | Sharp Corp | 半導体集積回路装置 |
JP2004006459A (ja) * | 2002-05-31 | 2004-01-08 | Yokohama Teikoki Kk | プリント配線基板およびその製造方法 |
JP2004131591A (ja) * | 2002-10-10 | 2004-04-30 | Japan Epoxy Resin Kk | 半導体封止用エポキシ樹脂組成物 |
-
2007
- 2007-10-17 JP JP2007270704A patent/JP5014945B2/ja active Active
Patent Citations (27)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6153332A (ja) * | 1984-08-23 | 1986-03-17 | Shin Kobe Electric Mach Co Ltd | 積層板の製造法 |
JPS63234013A (ja) * | 1987-03-23 | 1988-09-29 | Tatsuta Electric Wire & Cable Co Ltd | 半導体封止用樹脂組成物 |
JPH01155683A (ja) * | 1987-12-11 | 1989-06-19 | Ibiden Co Ltd | プリント配線板の製造方法 |
JPH01251785A (ja) * | 1988-03-31 | 1989-10-06 | Hitachi Chem Co Ltd | 印刷配線板の後処理方法 |
JPH02135764A (ja) * | 1988-11-16 | 1990-05-24 | Ibiden Co Ltd | 電子部品搭載用基板 |
JPH02276112A (ja) * | 1989-03-22 | 1990-11-13 | Mitsubishi Electric Corp | 電子機器用材の製造方法 |
JPH0528835A (ja) * | 1990-09-12 | 1993-02-05 | Kakogawa Plast Kk | フイルム状銅蒸着基材 |
JPH05160556A (ja) * | 1992-05-19 | 1993-06-25 | Ibiden Co Ltd | プリント配線板 |
JPH08335768A (ja) * | 1995-06-06 | 1996-12-17 | Taiyo Ink Mfg Ltd | アルカリ現像可能な一液型ソルダーレジスト組成物及びそれから得られるソルダーレジスト皮膜 |
JPH0971635A (ja) * | 1995-09-08 | 1997-03-18 | Toray Ind Inc | 樹脂封止型半導体装置 |
JPH10321994A (ja) * | 1997-05-16 | 1998-12-04 | Senju Metal Ind Co Ltd | 電子機器の導電部におけるマイグレーション防止方法 |
JPH1135796A (ja) * | 1997-07-15 | 1999-02-09 | Matsushita Electric Works Ltd | 封止用樹脂組成物及び半導体装置 |
JPH11145626A (ja) * | 1997-11-12 | 1999-05-28 | Kansai Paint Co Ltd | 多層プリント配線板 |
WO2000002091A1 (fr) * | 1998-07-07 | 2000-01-13 | Kansai Paint Co., Ltd. | Composition de resist de soudage a base d'eau |
JP2000086911A (ja) * | 1998-07-16 | 2000-03-28 | Citizen Watch Co Ltd | 封止樹脂組成物 |
JP2001127216A (ja) * | 1999-10-29 | 2001-05-11 | Sharp Corp | 樹脂封止型半導体装置およびこれを用いた液晶表示モジュール |
JP2001237006A (ja) * | 2000-02-22 | 2001-08-31 | Sony Chem Corp | 接続材料 |
JP2001257451A (ja) * | 2000-03-09 | 2001-09-21 | Matsushita Electric Ind Co Ltd | プリント配線板およびプリント配線板の製造方法 |
JP2002201448A (ja) * | 2000-12-27 | 2002-07-19 | Ricoh Co Ltd | 導電性接着剤 |
JP2002302534A (ja) * | 2001-01-29 | 2002-10-18 | Ube Ind Ltd | Cof実装用アンダ−フィル材および電子部品 |
JP2003023035A (ja) * | 2001-07-05 | 2003-01-24 | Sharp Corp | 半導体装置 |
JP2003025470A (ja) * | 2001-07-13 | 2003-01-29 | Seiren Co Ltd | 導電性メッシュ織物及びその製造方法 |
JP2003092379A (ja) * | 2001-09-18 | 2003-03-28 | Hitachi Ltd | 半導体装置 |
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JP2003318177A (ja) * | 2002-04-19 | 2003-11-07 | Sharp Corp | 半導体集積回路装置 |
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JP2004131591A (ja) * | 2002-10-10 | 2004-04-30 | Japan Epoxy Resin Kk | 半導体封止用エポキシ樹脂組成物 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2107798A1 (en) | 2008-04-04 | 2009-10-07 | Sony Corporation | Imaging apparatus, image processing apparatus, and exposure control method |
US8546162B2 (en) | 2010-10-07 | 2013-10-01 | Samsung Electronics Co., Ltd. | Method for forming light guide layer in semiconductor substrate |
JP2012127949A (ja) * | 2010-12-15 | 2012-07-05 | Electric Power Research Inst Inc | 軽水炉一次冷却材の放射能浄化 |
WO2013035868A1 (ja) | 2011-09-09 | 2013-03-14 | ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェン | 電子装置用組成物 |
US9334429B2 (en) | 2011-09-09 | 2016-05-10 | Henkel Ag & Co. Kgaa | Underfill sealant composition |
US9576871B2 (en) | 2011-09-09 | 2017-02-21 | Henkel Ag & Co. Kgaa | Composition for electronic device |
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