JP2001210822A - バリヤ蓄積モード電界効果トランジスタ - Google Patents

バリヤ蓄積モード電界効果トランジスタ

Info

Publication number
JP2001210822A
JP2001210822A JP2000395089A JP2000395089A JP2001210822A JP 2001210822 A JP2001210822 A JP 2001210822A JP 2000395089 A JP2000395089 A JP 2000395089A JP 2000395089 A JP2000395089 A JP 2000395089A JP 2001210822 A JP2001210822 A JP 2001210822A
Authority
JP
Japan
Prior art keywords
region
trench
effect transistor
field effect
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000395089A
Other languages
English (en)
Japanese (ja)
Inventor
Jacek Korec
ジャセック・コレック
Anup Bhalla
アナップ・バラ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of JP2001210822A publication Critical patent/JP2001210822A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
JP2000395089A 1999-12-30 2000-12-26 バリヤ蓄積モード電界効果トランジスタ Pending JP2001210822A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/476320 1999-12-30
US09/476,320 US6285060B1 (en) 1999-12-30 1999-12-30 Barrier accumulation-mode MOSFET

Publications (1)

Publication Number Publication Date
JP2001210822A true JP2001210822A (ja) 2001-08-03

Family

ID=23891378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000395089A Pending JP2001210822A (ja) 1999-12-30 2000-12-26 バリヤ蓄積モード電界効果トランジスタ

Country Status (4)

Country Link
US (1) US6285060B1 (fr)
EP (1) EP1113501B1 (fr)
JP (1) JP2001210822A (fr)
AT (1) ATE518251T1 (fr)

Cited By (6)

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JP2004342863A (ja) * 2003-05-16 2004-12-02 Shindengen Electric Mfg Co Ltd 半導体装置
JP2005510881A (ja) * 2001-11-21 2005-04-21 ゼネラル セミコンダクター，インク． オン抵抗が向上されたトレンチ金属酸化膜半導体電界効果トランジスタデバイス
JP2005524976A (ja) * 2002-05-03 2005-08-18 インターナショナル レクティファイアー コーポレイション 低閾値電圧を有する短チャンネルトレンチパワーｍｏｓｆｅｔ
KR100712989B1 (ko) 2005-03-14 2007-05-02 주식회사 하이닉스반도체 리세스 채널 및 비대칭접합 구조를 갖는 반도체 소자의제조방법
WO2009119479A1 (fr) * 2008-03-24 2009-10-01 日本電気株式会社 Dispositif à semi-conducteur et son procédé de fabrication
JP2013509720A (ja) * 2009-10-28 2013-03-14 ヴィシェイ−シリコニックス トレンチ金属酸化物半導体電界効果トランジスタ

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JP2001085685A (ja) * 1999-09-13 2001-03-30 Shindengen Electric Mfg Co Ltd トランジスタ
US6348712B1 (en) * 1999-10-27 2002-02-19 Siliconix Incorporated High density trench-gated power MOSFET
GB0005650D0 (en) * 2000-03-10 2000-05-03 Koninkl Philips Electronics Nv Field-effect semiconductor devices
US7745289B2 (en) 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
KR100338783B1 (en) * 2000-10-28 2002-06-01 Samsung Electronics Co Ltd Semiconductor device having expanded effective width of active region and fabricating method thereof
US6803626B2 (en) 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US6710403B2 (en) 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US6870220B2 (en) * 2002-08-23 2005-03-22 Fairchild Semiconductor Corporation Method and apparatus for improved MOS gating to reduce miller capacitance and switching losses
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
US6818513B2 (en) 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
JP2002270840A (ja) * 2001-03-09 2002-09-20 Toshiba Corp パワーｍｏｓｆｅｔ
US6639276B2 (en) * 2001-07-05 2003-10-28 International Rectifier Corporation Power MOSFET with ultra-deep base and reduced on resistance
JP2003046085A (ja) * 2001-08-01 2003-02-14 Seiko Epson Corp 半導体装置及びその製造方法
US6486511B1 (en) * 2001-08-30 2002-11-26 Northrop Grumman Corporation Solid state RF switch with high cutoff frequency
GB0122122D0 (en) * 2001-09-13 2001-10-31 Koninkl Philips Electronics Nv Trench-gate semiconductor devices and their manufacture
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US6573561B1 (en) * 2002-03-11 2003-06-03 International Business Machines Corporation Vertical MOSFET with asymmetrically graded channel doping
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US9437729B2 (en) * 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
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JP2005510881A (ja) * 2001-11-21 2005-04-21 ゼネラル セミコンダクター，インク． オン抵抗が向上されたトレンチ金属酸化膜半導体電界効果トランジスタデバイス
JP2005524976A (ja) * 2002-05-03 2005-08-18 インターナショナル レクティファイアー コーポレイション 低閾値電圧を有する短チャンネルトレンチパワーｍｏｓｆｅｔ
JP2004342863A (ja) * 2003-05-16 2004-12-02 Shindengen Electric Mfg Co Ltd 半導体装置
KR100712989B1 (ko) 2005-03-14 2007-05-02 주식회사 하이닉스반도체 리세스 채널 및 비대칭접합 구조를 갖는 반도체 소자의제조방법
US7381612B2 (en) 2005-03-14 2008-06-03 Hynix Semiconductor Inc. Method for manufacturing semiconductor device with recess channels and asymmetrical junctions
WO2009119479A1 (fr) * 2008-03-24 2009-10-01 日本電気株式会社 Dispositif à semi-conducteur et son procédé de fabrication
US8426895B2 (en) 2008-03-24 2013-04-23 Nec Corporation Semiconductor device and manufacturing method of the same
JP2013509720A (ja) * 2009-10-28 2013-03-14 ヴィシェイ−シリコニックス トレンチ金属酸化物半導体電界効果トランジスタ

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US6285060B1 (en) 2001-09-04
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EP1113501A2 (fr) 2001-07-04
ATE518251T1 (de) 2011-08-15

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